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Lincmos Low-power Operational Amplifiers

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             SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 D Input Offset Voltage Drift . . . Typically D D D D Low Noise . . . 68 nV/√Hz Typically at 0.1 µV/Month, Including the First 30 Days Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 16 V −40°C to 85°C . . . 4 V to 16 V −55°C to 125°C . . . 5 V to 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix and I-Suffix Types) D D D D D f = 1 kHz Output Voltage Range Includes Negative Rail High Input Impedance . . . 1012 Ω Typ ESD-Protection Circuitry Small-Outline Package Option Also Available in Tape and Reel Designed-In Latch-Up Immunity description The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable amplifier. These devices use the Texas Instruments silicon-gate LinCMOS technology, which provides offset-voltage stability far exceeding the stability available with conventional metal-gate processes. Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10 mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail. The device inputs and output are designed to withstand − 100-mA surge currents without sustaining latch-up. The TLC27L1 incorporates internal electrostatic-discharge (ESD) protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. AVAILABLE OPTIONS PACKAGE TA VIOmax AT 25°C SMALL OUTLINE (D) 0°C 0 C to 70 70°C C 2 mV 5 mV 10 mV TLC27L1BCD TLC27L1ACD TLC27L1CD PLASTIC DIP (P) TLC27L1BCP TLC27L1ACP TLC27L1CP −40°C −40 C to 85°C 85 C 2 mV 5 mV 10 mV TLC27L1BID TLC27L1AID TLC27L1ID TLC27L1BIP TLC27L1AIP TLC27L1IP −55°C to 125°C 10 mV TLC27L1MD TLC27L1MP D OR P PACKAGE (TOP VIEW) OFFSET N1 IN − IN + GND 1 8 2 7 3 6 4 5 VDD VDD OUT OFFSET N2 The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC27L1BCDR). Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments. Copyright  1995 − 2005, Texas Instruments Incorporated        !"#    $"%& !  '#( '"! !   $#!  !   $# )# #  #*  "#   '' + ,( '"!  $!# - '#  #!# &, !&"'# # -  && $##( POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 description (continued) The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from − 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of − 55°C to 125°C. equivalent schematic VDD P3 P12 P9A R6 P4 P2 P1 P5 P9B P11 R2 IN − R1 P10 N5 IN + N11 P6A C1 R5 P6B P7B P7A P8 N12 N3 N9 N6 N7 N1 N2 N4 R3 D1 D2 N13 R7 R4 OFFSET OFFSET N1 N2 2 N10 OUT POST OFFICE BOX 655303 GND • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 0.3 V to VDD Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 40°C to 85°C M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 55°C to 125°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 65°C to 150°C Case temperature for 60 seconds, TC: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground. 2. Differential voltages are at IN+ with respect to IN −. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section). DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW recommended operating conditions Supply voltage, VDD Common-mode input voltage, VIC VDD = 5 V VDD = 10 V Operating free-air temperature, TA POST OFFICE BOX 655303 C SUFFIX I SUFFIX M SUFFIX MIN MAX MIN MAX MIN MAX 3 16 4 16 5 16 −0.2 3.5 −0.2 3.5 0 3.5 −0.2 8.5 −0.2 8.5 0 8.5 0 70 −40 85 −55 125 • DALLAS, TEXAS 75265 UNIT V V °C 3              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 electrical characteristics at specified free-air temperature (unless otherwise noted) TLC27L1C, TLC27L1AC, TLC27L1BC TEST CONDITIONS PARAMETER TA† MIN VDD = 5 V TYP MAX 25°C TLC27L1C VIO Input offset voltage TLC27L1AC VO = 1.4 V, VIC = 0 V, RS = 50 Ω,, RI = 1 MΩ TLC27L1BC 1.1 Full range VDD = 10 V TYP MAX 10 1.1 12 25°C 0.9 Full range 0.24 Full range 0.9 2 0.26 3 αVIO 0.1 60 0.1 60 Input offset current (see Note 4) VO = VDD /2, VIC = VDD /2 25°C IIO 70°C 7 300 8 300 0.6 60 0.7 60 Input bias current (see Note 4) VO = VDD /2, VIC = VDD /2 25°C IIB 70°C 40 600 50 600 VOH VOL AVD CMRR 25°C −0.2 to 4 Full range −0.2 to 3.5 25°C 3.2 4.1 8 8.9 0°C 3 4.1 7.8 8.9 70°C 3 4.2 7.8 8.9 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage Large-signal differential voltage amplification Common-mode rejection ratio VID = 100 mV, RL= 1 MΩ VID = −100 mV, IOL = 0 RL= 1 MΩ, MΩ See Note 6 VIC = VICRmin µV/°C 1 −0.3 to 4.2 −0.2 to 9 −0.3 to 9.2 −0.2 to 8.5 V 25°C 0 50 0 50 0°C 0 50 0 50 70°C 0 50 0 50 25°C 50 520 50 870 0°C 50 700 50 1030 70°C 50 380 50 660 25°C 65 94 65 97 0°C 60 95 60 97 70°C 60 95 60 97 25°C 70 97 70 97 0°C 60 97 60 97 70°C 60 98 60 98 dB VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, No load 25°C 10 17 14 23 0°C 12 21 18 33 70°C 8 14 11 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 20 4 Supply current POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV V/mV Input current (BIAS SELECT) IDD pA V VDD = 5 V to 10 V, VO = 1.4 V II(SEL) pA V Supply-voltage rejection ratio (∆VDD /∆VIO) kSVR mV 2 Average temperature coefficient of input offset voltage VICR 1.1 5 6.5 3 25°C to 70°C 10 12 5 6.5 25°C UNIT MIN dB 95 nA µA              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 electrical characteristics at specified free-air temperature (unless otherwise noted) TLC27L1I, TLC27L1AI, TLC27L1BI TEST CONDITIONS PARAMETER TA† MIN VDD = 5 V TYP MAX 25°C TLC27L1I VIO Input offset voltage TLC27L1AI VO = 1.4 V, VIC = 0 V, RS = 50 Ω,, RL = 1 MΩ TLC27L1BI 1.1 Full range VDD = 10 V TYP MAX 10 1.1 13 25°C 0.9 Full range 0.24 Full range 0.9 2 0.26 3.5 αVIO 0.1 60 0.1 60 Input offset current (see Note 4) VO = VDD /2, VIC = VDD /2 25°C IIO 85°C 24 1000 26 1000 0.6 60 0.7 60 Input bias current (see Note 4) VO = VDD /2, VIC = VDD /2 25°C IIB 85°C 200 2000 220 2000 VOH VOL AVD CMRR 25°C −0.2 to 4 Full range −0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage Large-signal differential voltage amplification Common-mode rejection ratio VID = 100 mV, RL= 1 MΩ VID = − 100 mV, IOL = 0 RL= 1 MΩ See Note 6 VIC = VICRmin µV/°C 1 −0.3 to 4.2 −0.2 to 9 −0.3 to 9.2 −0.2 to 8.5 25°C 3 4.1 8 8.9 −40°C 3 4.1 7.8 8.9 85°C 3 4.2 7.8 8.9 V 25°C 0 50 0 50 −40°C 0 50 0 50 85°C 0 50 0 50 25°C 50 520 50 870 −40°C 50 900 50 1550 85°C 50 330 50 585 25°C 65 94 65 97 −40°C 60 95 60 97 85°C 60 95 60 98 25°C 70 97 70 97 −40°C 60 97 60 97 85°C 60 98 60 98 dB VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, No load 25°C 10 17 14 23 −40°C 16 27 25 43 85°C 17 13 10 † Full range is − 40 to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 18 Supply current POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV V/mV Input current (BIAS SELECT) IDD pA V VDD = 5 V to 10 V, VO = 1.4 V II(SEL) pA V Supply-voltage rejection ratio (∆VDD /∆VIO) kSVR mV 2 Average temperature coefficient of input offset voltage VICR 1.1 5 7 3.5 25°C to 85°C 10 13 5 7 25°C UNIT MIN dB 95 nA µA 5              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 electrical characteristics at specified free-air temperature (unless otherwise noted) TLC27L1M PARAMETER VIO Input offset voltage TEST CONDITIONS VO = 1.4 V, VIC = 0 V, RS = 50 Ω, RL = 1 MΩ αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = VDD /2, VIC = VDD /2 IIB Input bias current (see Note 4) VO = VDD /2, VIC = VDD /2 TA† 25°C VOL AVD CMRR High-level output voltage Low-level output voltage Large-signal differential voltage amplification Common-mode rejection ratio VID = − 100 mV, IOL = 0 RL= 1 MΩ, MΩ See Note 6 VIC = VICRmin 10 1.1 10 12 12 1.4 25°C 0.1 60 0.1 60 pA 125°C 1.4 15 1.8 15 nA 25°C 0.6 60 0.7 60 pA 125°C 9 35 10 35 nA 0 to 4 µV/°C 1.4 −0.3 to 4.2 0 to 9 0 to 3.5 −0.3 to 9.2 V 0 to 8.5 V 25°C 3.2 4.1 8 8.9 −55°C 3 4.1 7.8 8.8 125°C 3 4.2 7.8 9 V 25°C 0 50 0 50 −55°C 0 50 0 50 125°C 0 50 0 50 25°C 50 520 50 870 −55°C 25 1000 25 1775 125°C 25 200 25 380 25°C 65 94 65 97 −55°C 60 95 60 97 125°C 60 85 60 91 25°C 70 97 70 97 −55°C 60 97 60 97 125°C 60 98 60 98 dB VDD = 5 V to 10 V, VO = 1.4 V Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, No load 25°C 10 17 14 23 −55°C 17 30 28 48 125°C 7 12 9 † Full range is − 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 15 II(SEL) IDD 6 Supply current POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV V/mV Supply-voltage rejection ratio (∆VDD /∆VIO) kSVR UNIT 25°C to 125°C Full range VOH VDD = 10 V TYP MAX MIN mV Common-mode input voltage range (see Note 5) VID = 100 mV, RL= 1 MΩ 1.1 Full range 25°C VICR VDD = 5 V MIN TYP MAX dB 95 nA µA              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC27L1C, TLC27L1AC, TLC27L1BC MIN VI(PP) = 1 V SR Slew rate at unity gain RL = 1 MΩ, M , CL = 20 pF, See Figure 33 VI(PP) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 34 BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, See Figure 35 VI = 10 mV, CL = 20 pF, RS = 20 Ω, CL = 20 pF, See Figure 33 CL = 20 pF, f = B1, See Figure 35 TYP 25°C 0.03 0°C 0.04 70°C 0.03 25°C 0.03 0°C 0.03 70°C 0.02 25°C 68 25°C 5 0°C 6 70°C 4.5 25°C 85 0°C 100 70°C 65 25°C 34° 0°C 36° 70°C 30° UNIT MAX V/ s V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC27L1C, TLC27L1AC, TLC27L1BC MIN VI(PP) = 1 V SR Slew rate at unity gain M , RL = 1 MΩ, CL = 20 pF, See Figure 33 VI(PP) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 34 RS = 20 Ω, BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, CL = 20 pF, See Figure 33 VI = 10 mV, See Figure 35 CL = 20 pF, VI = 10 mV, CL = 20 pF, f = B1, See Figure 35 B1 φm Unity-gain bandwidth Phase margin POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYP 25°C 0.05 0°C 0.05 70°C 0.04 25°C 0.04 0°C 0.05 70°C 0.04 25°C 68 25°C 1 0°C 1.3 70°C 0.9 25°C 110 0°C 125 70°C 90 25°C 38° 0°C 40° 70°C 34° UNIT MAX V/ s V/µs nV/√Hz kHz kHz 7              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC27L1I, TLC27L1AI, TLC27L1BI MIN VI(PP) = 1 V SR Slew rate at unity gain RL = 1 MΩ, M , CL = 20 pF, See Figure 33 VI(PP) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 34 BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, See Figure 35 VI = 10 mV, CL = 20 pF, RS = 20 Ω, CL = 20 pF, See Figure 33 CL = 20 pF, f = B1, See Figure 35 TYP 25°C 0.03 −40°C 0.04 85°C 0.03 25°C 0.03 −40°C 0.04 85°C 0.02 25°C 68 25°C 5 −40°C 7 85°C 4 25°C 85 −40°C 130 85°C 55 25°C 34° −40°C 38° 85°C 28° UNIT MAX V/ s V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC27L1C, TLC27L1AC, TLC27L1BC MIN VI(PP) = 1 V SR Slew rate at unity gain M , RL = 1 MΩ, CL = 20 pF, See Figure 33 VI(PP) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 34 RS = 20 Ω, BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, CL = 20 pF, See Figure 33 VI = 10 mV, See Figure 35 CL = 20 pF, B1 φm 8 Unity-gain bandwidth Phase margin VI = 10 mV,l CL = 20 pF, POST OFFICE BOX 655303 f = B1, See Figure 35 • DALLAS, TEXAS 75265 TYP 25°C 0.05 −40°C 0.06 85°C 0.03 25°C 0.04 −40°C 0.05 85°C 0.03 25°C 68 25°C 1 −40°C 1.4 85°C 0.8 25°C 110 −40°C 155 85°C 80 25°C 38° −40°C 42° 85°C 32° UNIT MAX V/ s V/µs nV/√Hz kHz MHz              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS VI(PP) = 1 V SR Slew rate at unity gain RL = 1 MΩ, M , CL = 20 pF, See Figure 33 VI(PP) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 34 RS = 20 Ω, BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, CL = 20 pF, See Figure 33 VI = 10 mV, See Figure 35 CL = 20 pF, B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, CL = 20 pF, f = B1, See Figure 35 TA TLC27L1M MIN TYP 25°C 0.03 −55°C 0.04 125°C 0.02 25°C 0.03 −55°C 0.04 125°C 0.02 25°C 68 25°C 5 −55°C 8 125°C 3 25°C 85 −55°C 140 125°C 45 25°C 34° −55°C 39° 125°C 25° MAX UNIT V/ s V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS VI(PP) = 1 V SR Slew rate at unity gain RL = 1 MΩ, M , CL = 20 pF, See Figure 33 VI(PP) = 5.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 34 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ, CL = 20 pF, See Figure 33 VI = 10 mV, See Figure 35 CL = 20 pF, Unity-gain bandwidth Phase margin VI = 10 mV, CL = 20 pF, POST OFFICE BOX 655303 f = B1, See Figure 35 • DALLAS, TEXAS 75265 TA TLC27L1M MIN TYP 25°C 0.05 −55°C 0.06 125°C 0.03 25°C 0.04 −55°C 0.06 125°C 0.03 25°C 68 25°C 1 −55°C 1.5 125°C 0.7 25°C 110 −55°C 165 125°C 70 25°C 38° −55°C 43° 125°C 29° MAX UNIT V/ s V/µs nV/√Hz kHz kHz 9              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS Table of Graphs FIGURE 10 VIO αVIO Input offset voltage Distribution 1, 2 Temperature coefficient Distribution 3, 4 VOH High-level output voltage vs High-level output current vs Supply voltage vs Free-air temperature 5, 6 7 8 VOL Low-level output voltage vs Common-mode input voltage vs Differential input voltage vs Free-air temperature vs Low-level output current 9, 10 11 12 13, 14 AVD Large-signal differential voltage amplification vs Supply voltage vs Free-air temperature vs Frequency 15 16 27, 28 IIB IIO Input bias current vs Free-air temperature 17 Input offset current vs Free-air temperature 17 VI Maximum input voltage vs Supply voltage 18 IDD Supply current vs Supply voltage vs Free-air temperature 19 20 SR Slew rate vs Supply voltage vs Free-air temperature 21 22 Bias-select current vs Supply voltage 23 VO(PP) Maximum peak-to-peak output voltage vs Frequency 24 B1 Unity-gain bandwidth vs Free-air temperature vs Supply voltage 25 26 φm Phase margin vs Supply voltage vs Free-air temperature vs Capacitive load 29 30 31 Vn Equivalent input noise voltage vs Frequency 32 Phase shift vs Frequency 27, 28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† DISTRIBUTION OF TLC27L1 INPUT OFFSET VOLTAGE Percentage of Units − % 60 ÏÏÏÏÏÏÏÏÏÏÏÏ 70 905 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C P Package 50 40 30 20 50 40 30 20 10 10 0 905 Amplifiers Tested From 6 Wafer Lots VDD = 10 V TA = 25°C P Package 60 Percentage of Units − % 70 DISTRIBUTION OF TLC27L1 INPUT OFFSET VOLTAGE −5 −4 −3 −2 −1 0 1 2 3 VIO − Input Offset Voltage − mV 4 0 5 −5 −4 −3 −2 −1 0 1 2 3 VIO − Input Offset Voltage − mV DISTRIBUTION OF TLC27L1 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT DISTRIBUTION OF TLC27L1 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 70 70 356 Amplifiers Tested From 8 Wafer Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 19.2 µV/°C (1) 12.1 µV/°C 60 Percentage of Units − % Percentage of Units − % 50 5 Figure 2 Figure 1 60 4 40 30 20 10 50 40 ÏÏÏÏÏÏ 356 Amplifiers Tested From 8 Wafer Lots VDD = 10 V TA = 25°C to 125°C P Package Outliers: (1) 18.7 µV/°C (1) 11.6 µV/°C 30 20 10 0 −10 −8 −6 −4 −2 0 2 4 6 8 10 αVIO − Temperature Coefficient − µV/°C 0 2 4 6 8 −10 −8 −6 −4 −2 0 αVIO − Temperature Coefficient − µV/°C Figure 3 10 Figure 4 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 16 ÁÁ ÁÁ ÁÁ VID = 100 mV TA = 25°C 4 VOH High-Level Output Voltage − V VOH− VOH High-Level Output Voltage − V VOH− 5 ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏ VDD = 5 V 3 VDD = 4 V VDD = 3 V 2 ÁÁ ÁÁ ÁÁ 1 0 0 −2 −4 −6 −8 IOH − High-Level Output Current − mA VID = 100 mV TA = 25°C 14 VDD = 16 V 12 10 8 VDD = 10 V 6 4 2 0 0 −10 −5 −10 −15 −20 −25 −30 −35 IOH − High-Level Output Current − mA Figure 6 Figure 5 HIGH-LEVEL OUTPUT VOLTAGE vs SUPPLY VOLTAGE HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE −1.6 VID = 100 mV RL = 1 MΩ TA = 25°C 14 V VOH− OH High-Level Output Voltage − V V VOH− OH High-Level Output Voltage − V 16 12 10 8 6 ÁÁÁ ÁÁÁ ÁÁÁ 4 2 0 0 2 4 6 8 10 12 VDD − Supply Voltage − V 14 16 ÁÁ ÁÁ ÁÁ IOH = − 5 mA VID = 100 mV −1.7 VDD = 5 V −1.8 −1.9 −2 VDD = 10 V −2.1 −2.2 −2.3 −2.4 −75 −50 Figure 7 −25 0 25 50 75 100 TA − Free-Air Temperature − °C Figure 8 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 12 −40 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 500 ÁÁ ÁÁ VDD = 5 V IOL = 5 mA TA = 25°C 650 VOL VOL − Low-Level Output Voltage − mV VOL VOL − Low-Level Output Voltage − mV 700 600 ÏÏÏÏÏÏ ÏÏÏÏÏÏ 550 VID = − 100 mV 500 450 450 400 VID = − 100 mV VID = − 1 V 350 VID = − 2.5 V ÁÁÁ ÁÁÁ 400 VID = − 1 V 350 300 250 300 0 VDD = 10 V IOL = 5 mA TA = 25°C 1 2 3 VIC − Common-Mode Input Voltage − V 4 0 1 3 5 7 9 2 4 6 8 VIC − Common-Mode Input Voltage − V Figure 10 Figure 9 LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE 900 IOL = 5 mA VIC = VID/2 TA = 25°C 700 VOL VOL − Low-Level Output Voltage − mV VOL VOL − Low-Level Output Voltage − mV 800 ÁÁ ÁÁ 10 600 ÏÏÏÏ ÏÏÏÏ 500 VDD = 5 V 400 300 ÁÁ ÁÁ ÁÁ VDD = 10 V 200 100 0 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10 800 IOL = 5 mA VID = − 1 V VIC = 0.5 V 700 ÏÏÏÏ ÏÏÏÏ VDD = 5 V 600 500 ÏÏÏÏ ÏÏÏÏ 400 VDD = 10 V 300 200 100 0 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C VID − Differential Input Voltage − V Figure 12 Figure 11 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 3 1 VOL VOL − Low-Level Output Voltage − V 0.9 0.8 VOL VOL − Low-Level Output Voltage − V VID = − 1 V VIC = 0.5 V TA = 25°C VDD = 5 V 0.7 VDD = 4 V 0.6 VDD = 3 V 0.5 0.4 ÁÁ ÁÁ 2.5 0.2 0.1 0 0 1 2 3 4 5 6 7 VDD = 16 V 2 VDD = 10 V 1.5 ÁÁ ÁÁ ÁÁ 0.3 VID = − 1 V VIC = 0.5 V TA = 25°C 1 0.5 0 0 8 5 10 15 20 25 IOL − Low-Level Output Current − mA IOL − Low-Level Output Current − mA Figure 13 Figure 14 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 2000 2000 AVD AVD− Large-Signal Differential Voltage Amplification − V/mV TA = − 55°C 1600 1400 TA = 0°C 1200 70°C 800 85°C 600 400 125°C 200 0 0 2 4 6 8 10 12 VDD − Supply Voltage − V 1600 1400 ÏÏ ÏÏÏ ÏÏÏ ÏÏÏÁÁ ÁÁ ÁÁ ÁÁ ÁÁ 25°C 1000 14 RL = 1 MΩ 1800 − 40°C AVD AVD− Large-Signal Differential Voltage Amplification − V/mV RL = 1 MΩ 1800 Á Á Á ÁÁ ÁÁ ÁÁ 16 VDD = 10 V 1200 1000 800 600 VDD = 5 V 400 200 0 −75 −50 Figure 15 −25 0 25 50 75 100 TA − Free-Air Temperature − °C Figure 16 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 14 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† INPUT BIAS AND INPUT OFFSET CURRENTS vs FREE-AIR TEMPERATURE ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ 16 VDD = 10 V VIC = 5 V See Note A 1000 ÏÏÏÏ ÏÏÏÏ TA = 25°C ÏÏ V I max − Maximum Input Voltage − V IIB and I IO − Input Bias and Input Offsert Currents − pA 10000 MAXIMUM INPUT VOLTAGE vs SUPPLY VOLTAGE IIB 100 ÏÏ ÏÏ IIO 10 1 14 12 10 8 6 4 2 0 0.1 25 35 45 55 65 75 85 0 95 105 115 125 2 TA − Free-Air Temperature − °C NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. 4 6 8 10 Figure 17 16 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 30 45 TA = − 55°C VO = VDD/2 No Load 40 VO = VDD/2 No Load 25 ÏÏÏÏ 35 −40°C 30 25 0°C ÏÏÏ 20 25°C 15 70°C 10 125°C 5 mA A IIDD DD − Supply Current − µ mA A IIDD DD − Supply Current − µ 14 Figure 18 SUPPLY CURRENT vs SUPPLY VOLTAGE ÁÁ ÁÁ 12 VDD − Supply Voltage − V ÁÁ ÁÁ 0 0 2 4 6 8 10 12 VDD − Supply Voltage − V 14 16 20 VDD = 10 V 15 10 VDD = 5 V 5 0 −75 −50 Figure 19 −25 0 25 50 75 100 TA − Free-Air Temperature − °C 125 Figure 20 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† SLEW RATE vs SUPPLY VOLTAGE 0.07 0.07 AV = 1 VI(PP) = 1 V RL = 1 MΩ CL = 20 pF TA= 25°C See Figure 33 0.05 0.04 0.03 0.02 0.01 0.05 VDD = 10 V VI(PP) = 1 V 0.04 0.03 VDD = 5 V VI(PP) = 1 V 0.02 VDD = 5 V VI(PP) = 2.5 V 0.01 0.00 0 2 4 6 8 10 12 VDD − Supply Voltage − V 14 0.00 −75 16 −50 −25 0 25 50 75 100 TA − Free-Air Temperature − °C Figure 21 Bias-Select Current − nA 120 MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY VO(PP) − Maximum Peak-to-Peak Output Voltage − V 135 ÏÏÏÏÏ ÏÏÏÏÏ TA = 25°C VI(SEL) = VDD 105 90 75 60 45 30 15 0 0 2 4 6 8 10 12 VDD − Supply Voltage − V 14 16 10 Á 9 8 7 6 5 ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ TA = 125°C TA = 25°C TA = −55°C VDD = 10 V VDD = 5 V 4 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 3 RL = 1 MΩ See Figure 33 2 1 0 0.1 1 10 f − Frequency − kHz Figure 24 Figure 23 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 16 125 Figure 22 BIAS-SELECT CURRENT vs SUPPLY VOLTAGE 150 RL = 1 MΩ CL = 20 pF AV = 1 See Figure 33 VDD = 10 V VI(PP) = 5.5 V 0.06 SR − Slew Rate − V/sµ s 0.06 SR − Slew Rate − V/sµ s SLEW RATE vs FREE-AIR TEMPERATURE POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 100              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† UNITY-GAIN BANDWIDTH vs FREE-AIR TEMPERATURE 140 VDD = 5 V VI = 10 mV CL = 20 pF See Figure 35 130 VI = 10 mV CL = 20 pF TA = 25°C See Figure 35 ÏÏÏÏÏÏ ÏÏÏÏÏÏ 130 B1 B1 − Unity-Gain Bandwidth − kHz B1 B1 − Unity-Gain Bandwidth − kHz 150 UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE 110 90 70 50 120 110 100 90 80 70 60 30 −75 50 −50 −25 0 25 50 75 100 TA − Free-Air Temperature − °C 0 125 2 4 6 8 10 12 VDD − Supply Voltage − V 14 16 Figure 26 Figure 25 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 VDD = 5 V RL = 1 MΩ TA = 25°C ÁÁ ÁÁ 105 0° ÏÏÏ 104 30° AVD 103 60° ÏÏÏÏÏ ÏÏÏÏÏ 102 90° Phase Shift AVD AVD − Large-Signal Differential Voltage Amplification − dB 106 Phase Shift 101 1 0.1 1 10 100 1k 10 k f − Frequency − Hz 120° 150° 100 k 180° 1M Figure 27 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 VDD = 10 V RL = 1 MΩ TA = 25°C ÁÁ ÁÁ 105 0° ÏÏÏÏ 104 30° AVD 103 60° ÏÏÏÏÏ ÏÏÏÏÏ 102 90° Phase Shift AVD AVD − Large-Signal Differential Voltage Amplification − dB 106 Phase Shift 101 1 0.1 1 10 120° 150° 100 1k 10 k f − Frequency − Hz 100 k 180° 1M Figure 28 PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 42° 40° VI = 10 mV CL = 20 pF TA = 25°C See Figure 35 Á Á 36° 38° φm m − Phase Margin φm m − Phase Margin 40° VDD = 5 mV VI = 10 mV CL = 20 pF See Figure 35 38° 36° 34° 32° 30° ÁÁ ÁÁ 34° 28° 26° 24° 32° 22° 30° 0 2 4 6 8 10 12 VDD − Supply Voltage − V 14 16 20° −75 −50 Figure 29 −25 0 25 50 75 100 TA − Free-Air Temperature − °C 125 Figure 30 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 TYPICAL CHARACTERISTICS† 37° VDD = 5 mV VI = 10 mV TA = 25°C See Figure 35 φm m − Phase Margin 35° 33° ÁÁ ÁÁ ÁÁ ÁÁ 31° ÁÁ ÁÁ 29° 27° 25° 0 10 20 30 40 50 60 70 80 CL − Capacitive Load − pF 90 100 VN nV/ Hz V n − Equivalent Input Noise Voltage − nV/Hz PHASE MARGIN vs CAPACITIVE LOAD EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÏÏÏÏÏ ÁÁÁÁÁ ÏÏÏÏÏ 200 VDD = 5 V RS = 20Ω TA = 25°C See Figure 34 175 150 125 100 75 50 25 0 10 100 f − Frequency − Hz 1 Figure 31 1000 Figure 32 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits Because the TLC27L1 is optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives the same result. VDD VDD + − − VO VO CL RL VI + + VI CL RL VDD − (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 33. Unity-Gain Amplifier POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits (continued) 2 kΩ 2 kΩ VDD 20 Ω VDD + − − 1/2 VDD VO VO + + 20 Ω 20 Ω 20 Ω VDD − (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 34. Noise-Test Circuit 10 kΩ 10 kΩ VDD − VI VDD + 100 Ω − 100 Ω VI VO VO + 1/2 VDD + CL CL VDD − (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 35. Gain-of-100 Inverting Amplifier input bias current Due to the high input impedance of the TLC27L1 operational amplifiers, attempts to measure the input bias current can result in erroneous readings. The bias current at normal room ambient temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid erroneous measurements: 1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the device inputs (see Figure 36). Leakages that would otherwise flow to the inputs are shunted away. 2. Compensate for the leakage of the test socket by actually performing an input bias-current test (using a picoammeter) with no device in the test socket. The actual input bias current can then be calculated by subtracting the open-socket leakage readings from the readings obtained with a device in the test socket. One word of caution: many automatic testers as well as some bench-top operational amplifier testers use the servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage drop across the series resistor is measured and the bias current is calculated). This method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible using this method. 20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 PARAMETER MEASUREMENT INFORMATION 8 5 V = VIC 1 4 Figure 36. Isolation Metal Around Device Inputs (JG and P packages) low-level output voltage To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise results in the device low-level output being dependent on both the common-mode input voltage level as well as the differential input voltage level. When attempting to correlate low-level output readings with those quoted in the electrical specifications, these two conditions should be observed. When conditions other than these are to be used, please refer to the Typical Characteristics section of this data sheet. input offset-voltage temperature coefficient Erroneous readings often result from attempts to measure the temperature coefficient of input offset voltage. This parameter is actually a calculation using input offset-voltage measurements obtained at two different temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input offset-voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these measurements be performed at temperatures above freezing to minimize error. full-power response Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion. The full-peak response is defined as the maximum output frequency, without regard to distortion, above which full peak-to-peak output swing cannot be maintained. Since there is no industry-wide accepted value for significant distortion, the full-peak response is specified in this data sheet and is measured using the circuit in Figure 33. The initial setup involves the use of a sinusoidal input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained (Figure 37). A square wave allows a more accurate determination of the point at which the maximum peak-to-peak output is reached. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 21              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 PARAMETER MEASUREMENT INFORMATION full-power response (continued) (a) f = 100 Hz (b) BOM > f > 100 Hz (c) f = BOM (d) f > BOM Figure 37. Full-Power-Response Output Signal test time Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume, short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more pronounced with reduced supply levels and lower temperatures. APPLICATION INFORMATION single-supply operation VDD R4 R1 VI R2 − VO + While the TLC27L1 performs well using dual power supplies (also called balanced or split supplies), the design is optimized for single-supply operation. This includes an input common-mode voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended. Vref V R3 C 0.01 µF ref V O +V R3 DD R1 ) R3 + (V ref * V ) R4 ) V I R2 ref Figure 38. Inverting Amplifier With Voltage Reference Many single-supply applications require that a voltage be applied to one input to establish a reference level that is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38). The low-input bias-current consumption of the TLC27L1 permits the use of very large resistive values to implement the voltage divider, thus minimizing power consumption. The TLC27L1 works well in conjunction with digital logic; however, when powering both linear devices and digital logic from the same power supply, the following precautions are recommended: 1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic. 2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications. 22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION single-supply operation (continued) − OUT Logic Logic Power Supply Logic + (a) COMMON SUPPLY RAILS − Logic + OUT Logic Power Supply Logic (b) SEPARATE BYPASSED SUPPLY RAILS (preferred) Figure 39. Common Versus Separate Supply Rails input offset voltage nulling The TLC27L1 offers external input-offset null control. Nulling of the input-offset voltage may be achieved by adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper connected as shown in Figure 40. Total nulling may not be possible. IN − VDD IN + ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ − OUT N2 + N1 IN − 25 kΩ IN + ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ − OUT N2 + 25 kΩ N1 GND (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 40. Input Offset-Voltage Null Circuit input characteristics The TLC27L1 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. Exceeding this specified range is a common problem, especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit is specified at VDD − 1 V at TA = 25°C and at VDD − 1.5 V at all other temperatures. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 23              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION input characteristics (continued) The use of the polysilicon-gate process and the careful input circuit design gives the TLC27L1 very good input offset-voltage drift characteristics relative to conventional metal-gate processes. Offset-voltage drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset-voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation. Because of the extremely high input impedance and resulting low bias-current requirements, the TLC27L1 is well suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can easily exceed bias-current requirements and cause a degradation in device performance. It is good practice to include guard rings around inputs (similar to those of Figure 36 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 41). noise performance The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. The low-input bias-current requirements of the TLC27L1 results in a very-low noise current, which is insignificant in most applications. This feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise currents. + (a) NONINVERTING AMPLIFIER VO + VO (b) INVERTING AMPLIFIER Figure 41. Guard-Ring Schemes 24 POST OFFICE BOX 655303 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ • DALLAS, TEXAS 75265 VI + − VI ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ − VI − ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ (c) UNITY-GAIN AMPLIFIER VO              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION feedback Operational amplifier circuits almost always employ feedback, and since feedback is the first prerequisite for oscillation, a little caution is appropriate. Most oscillation problems result from driving capacitive loads and ignoring stray input capacitance. A small-value capacitor connected in parallel with the feedback resistor is an effective remedy (see Figure 42). The value of this capacitor is optimized empirically. − VO + electrostatic discharge protection ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ Figure 42. Compensation for Input Capacitance The TLC27L1 incorporates an internal ESD protection circuit that prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised, however, when handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode. latch-up Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27L1 inputs and output were designed to withstand − 100-mA surge currents without sustaining latch-up; however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails as close to the device as possible. The current path established when latch-up occurs is usually between the positive supply rail and ground and can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of latch-up occurring increases with increasing temperature and supply voltages. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 25              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION output characteristics (a) CL = 20 pF, RL = NO LOAD 2.5 V + All operating characteristics of the TLC27L1 were measured using a 20-pF load. The devices drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 44). In many cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem. ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ − The output stage of the TLC27L1 is designed to sink and source relatively high amounts of current (see Typical Characteristics). If the output is subjected to a short-circuit condition, this high current capability can cause device damage under certain conditions. Output current capability increases with supply voltage (see Figure 43). VI VO CL TA = 25°C f = 1 kHz VI(PP) = 1 V − 2.5 V Figure 43. Test Circuit for Output Characteristics (b) CL = 260 pF, RL = NO LOAD (c) CL = 310 pF, RL = NO LOAD Figure 44. Effect of Capacitive Loads in Low-Bias Mode Although the TLC27L1 possesses excellent high-level output voltage and current capability, methods are available for boosting this capability, if needed. The simplest method involves the use of a pullup resistor (RP) connected from the output to the positive supply rail (see Figure 45). There are two disadvantages to the use of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low values of RP, a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the output current. 26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ VDD − VI RP IP VO + IF V –V DD O R + P I )I )I F L P IP = Pullup current required by the operational amplifier (typically 500 mA) R2 IL R1 RL Figure 45. Resistive Pullup to Increase VOH 10 kΩ 10 kΩ 10 kΩ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 5V − VI TLC27L1 0.016 µF 0.016 µF 10 kΩ + ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ 5V − 10 kΩ TLC27L1 + ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 5V − TLC27L1 Low Pass + High Pass 5 kΩ Band Pass R = 5 kΩ(3/d-1) (see Note A) NOTE A: d = damping factor, I/O Figure 46. State-Variable Filter POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 27              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION VO (see Note A) 9V C = 0.1 µF ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 9V 10 kΩ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ − 9V 100 kΩ − TLC27L1 R2 + 10 kΩ VO (see Note B) TLC27L1 + R1, 100 kΩ F O R3, 47 kΩ NOTES: A. VO(PP) = 8 V B. VO(PP) = 4 V Figure 47. Single-Supply Function Generator ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ VDD + VI TLC27L1 VI − VDD S1 C A Select AV S1 10 S2 100 S2 C A 90 kΩ X1 TLC4066 1 B 1 X2 2 9 kΩ Analog Switch 2 B 1 kΩ NOTE A: VDD = 5 V to 12 V Figure 48. Amplifier With Digital-Gain Selection 28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 + ƪ ƫ R1 1 4C(R2) R3              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 5V + 500 kΩ TLC27L1 VO1 − 5V 500 kΩ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ + VO2 TLC27L1 − 0.1 µF 500 kΩ 500 kΩ Figure 49. Multivibrator 10 kΩ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ VDD 20 kΩ VI + VO TLC27L1 − 100 kΩ NOTE A: VDD = 5 V to 16 V Figure 50. Full-Wave Rectifier POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 29              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 APPLICATION INFORMATION 10 kΩ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ VDD 100 kΩ Set + 100 kΩ Reset TLC27L1 − 33 Ω NOTE A: VDD = 5 V to 16 V Figure 51. Set/Reset Flip-Flop 0.016 µF ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 5V 10 kΩ 10 kΩ + Vi 0.016 µF TLC27L1 − NOTE A: Normalized to FC = 1 kHz and RL = 10 kΩ Figure 52. Two-Pole Low-Pass Butterworth Filter 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 VO              SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 MECHANICAL INFORMATION D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PIN SHOWN PINS ** 0.050 (1,27) 8 14 16 A MAX 0.197 (5,00) 0.344 (8,75) 0.394 (10,00) A MIN 0.189 (4,80) 0.337 (8,55) 0.386 (9,80) DIM 0.020 (0,51) 0.014 (0,35) 14 0.010 (0,25) M 8 0.244 (6,20) 0.228 (5,80) 0.008 (0,20) NOM 0.157 (4,00) 0.150 (3,81) 1 Gage Plane 7 A 0.010 (0,25) 0°−ā 8° 0.044 (1,12) 0.016 (0,40) Seating Plane 0.069 (1,75) MAX 0.010 (0,25) 0.004 (0,10) 0.004 (0,10) 4040047 / B10/94 NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15). Four center pins are connected to die mount pad. 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