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LS841 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS841 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS841 features a 10mV offset and 10-µV/°C drift. The 6 Pin SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information).
LS841 Applications:
Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Breakdown Voltage 60 BVGGO Gate‐To‐Gate Breakdown 60 TRANSCONDUCTANCE YfSS Full Conduction 1000 YfS Typical Operation 500 |YFS1‐2 / Y FS| Mismatch ‐‐ DRAIN CURRENT IDSS Full Conduction 0.5 |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ GATE VOLTAGE VGS(off) or Vp Pinchoff voltage 1 VGS(on) Operating Range 0.5 GATE CURRENT ‐IGmax. Operating ‐‐ ‐IGmax. High Temperature ‐‐ ‐IGmax. Reduced VDG ‐‐ ‐IGSSmax. At Full Conduction ‐‐ OUTPUT CONDUCTANCE YOSS Full Conduction ‐‐ YOS Operating ‐‐ |YOS1‐2| Differential ‐‐ COMMON MODE REJECTION CMR ‐20 log | V GS1‐2/ V DS| ‐‐ ‐20 log | V GS1‐2/ V DS| ‐‐ NOISE NF Figure ‐‐ en Voltage ‐‐ ‐‐ CAPACITANCE CISS Input ‐‐ CRSS Reverse Transfer ‐‐ CDD Drain‐to‐Drain ‐‐
FEATURES LOW DRIFT | V GS1‐2 / T| ≤10µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2|≤ 10mV ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 10 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 mV VDG=20V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 2 1 2 ‐‐ 10 ‐‐ 5 ‐‐ ‐‐ 0.1 0.01 100 75 ‐‐ ‐‐ ‐‐ 4 1.2 0.1
MAX. ‐‐ ‐‐ 4000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 10 1 0.1 ‐‐ ‐‐ 0.5 10 15 10
UNITS V V µmho µmho % mA % V V pA nA pA pA µmho µmho µmho dB
CONDITIONS VDS = 0 ID=1nA I G= 1nA ID= 0 IS= 0 VDG= 20V VGS= 0V f = 1kHz VDG= 20V ID= 200µA VDG= 20V VGS= 0V VDS= 20V ID= 1nA VDS=20V ID=200µA VDG= 20V ID= 200µA TA= +125°C VDG = 10V ID= 200µA VDG= 20V , VDS =0 VDG= 20V VGS= 0V VDG= 20V ID= 200µA
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5 ‐‐
dB nV/√Hz pF
∆VDS = 10 to 20V ID=200µA ∆VDS = 5 to 10V ID=200µA VDS= 20V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz VDS=20V ID=200µA f=1KHz NBW=1Hz VDS=20V ID=200µA f=10Hz NBW=1Hz VDS= 20V, ID=200µA
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages: LS841 / LS841 in SOT-23 LS841 / LS841 available as bare die Please contact Micross for full package and die dimensions
Tel: +44 1603 788967 Email:
[email protected] Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
