Transcript
SST440 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST440 The SST440 is a tightly matched Monolithic Dual N-Channel JFET FEATURES Direct Replacement for SILICONIX SST440 HIGH CMRR LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted)
The SST440 are monolithic dual JFETs mounted in a SOIC package. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The SST440 is a direct replacement for discontinued Siliconix SST440.
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source Gate to Gate
The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). SST440 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio Gfs1 / Gfs2 Forward Transconductance Ratio2
CMRR ≥ 85dB IGSS ≤ 1 pA
MIN
TYP
‐65°C to +150°C ‐55°C to +135°C 500mW 50mA ‐25V ‐25V ±50V
20
MAX 10
0.07
CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
0.97
VDS = 10V, ID = 5mA, f = 1kHz
85
dB
VDG = 5 to 10V, ID = 5mA
UNITS mV µV/°C
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CMRR
Common Mode Rejection Ratio
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 IDSS Gate to Source Saturation Current 6 IGSS Gate Leakage Current3 IG Gate Operating Current gfs gos CISS CRSS en
Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise Voltage
4.5
TYP. ‐3.5 15 ‐1 ‐1
MAX. ‐6 30 ‐500 ‐500
UNITS V V mA pA pA
CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5mA
6 70 3 1 4
9 200
mS µS pF pF nV/√Hz
VDS = 10V, ID= 5mA, f = 1kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator
VDS = 10V, ID = 5mA, f = 1MHz VDS = 10V, ID = 5mA, f = 10kHz
SOIC (Top View)
Available Packages: SST440 in SOIC SST440 available as bare die Please contact Micross for full package and die dimensions: Email:
[email protected] Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
