Transcript
SST5912 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National SST5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL SST5912 LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted)
The SST5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The SST5912 is a direct replacement for discontinued Siliconix and National SST5912.
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source
The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).
SST5912 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio |IG1 – IG2 | Differential Gate Current
500mW 50mA ‐25V ‐25V
MIN ‐‐ ‐‐
TYP ‐‐ ‐‐
MAX 15 40
UNITS mV µV/°C
CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
0.95
‐‐
1
%
‐‐
‐‐
20
nA
0.95
‐‐
1
%
VDG = 10V, ID = 5mA TA = +125°C VDS = 10V, ID = 5mA, f = 1kHz
‐‐
85
‐‐
dB
VDG = 5V to 10V, ID = 5mA
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gfs1 / gfs2
‐65°C to +150°C ‐55°C to +135°C
CMRR
Forward Transconductance Ratio2
Common Mode Rejection Ratio
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 VGS(F) Gate to Source Forward Voltage ‐‐ VGS Gate to Source Voltage ‐0.3 IDSS Gate to Source Saturation Current3 7 IGSS Gate Leakage Current3 ‐‐ IG Gate Operating Current ‐‐ gfs
Forward Transconductance
gos
Output Conductance
CISS CRSS NF en
Input Capacitance Reverse Transfer Capacitance Noise Figure Equivalent Input Noise Voltage
4000 4000 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐
TYP. ‐‐ ‐‐ 0.7 ‐‐ ‐‐ ‐1 ‐1
MAX. ‐5 ‐‐ ‐4 40 ‐50 ‐50
UNITS V
‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 7 4
10000 10000 100 150 5 1.2 1 20 10
µS
VDG = 10V, ID= 5mA
pF dB nV/√Hz
VDG = 10V, ID = 5mA, f = 1MHz
mA pA
CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1nA IG = 1mA, VDS = 0V VDG = 10V, IG = 5mA VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5mA
VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ VDG = 10V, ID = 5mA, f = 100Hz VDG = 10V, ID = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator Available Packages: Please contact Micross for full package and die dimensions:
SST5912 in SOIC SST5912 available as bare die
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