Transcript
www.centon.com
MEMORY
S P E C I F I C AT I O N S
32MEGX72 (PC133) 32MX8 BASED 33,554,432words x 72Bit Synchronous Dynamic RAM Memory Module (Unbuffered DIMM)
Centon's 256MB ECC UNBUFFERED Memory Module is 33,554,432 words by 72Bit Synchronous Dynamic RAM Memory Module which is assembled with 9 pieces of a 32MX8Bit TSOP Synchronous Dynamic RAM stacks on the printed circuit board. The module is optimized for high density and large capacity in a compact size.
32MEGX72 (PC133) -
256MB
M0360 Rev: 0.0 02/08
©2008 CENTON ELECTRONICS, INC., ALISO VIEJO, CA 92656. ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE. ALL OTHER PRODUCTS AND BRAND NAMES ARE REGISTERED TRADEMARKS OF THEIR RESPECTIVE COMPANIES, AND CENTON DOES NOT REPRESENT THAT SUCH COMPANIES ENDORSE ITS PRODUCTS.
32MEGX72 (PC133)
CENTON Pinout Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Vss DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 CB0 CB1 Vss NC NC VDD WE DQMB0
29 DQMB1 30 CS0 31 NC 32 Vss 33 A0 34 A2 35 A4 36 A6 37 A8 38 A10 39 BA1 40 VDD 41 V DD 42 CK0 43 Vss 44 NC 45 CS2 46 DQMB2 47 DQMB3 48 NC 49 VDD 50 NC 51 NC 52 CB2 53 CB3 54 Vss 55 DQ16 56 DQ17
57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
DQ18 DQ19 VDD DQ20 NC NC CKE1* Vss DQ21 DQ22 DQ23 Vss DQ24 DQ25 DQ26 DQ27 V DD DQ28 DQ29 DQ30 DQ31 Vss CK2 NC NC SDA SLC VDD
85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112
Vss DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 Vss DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 CB4 CB5 Vss NC NC VDD CAS DQMB4
113 DQMB5 114 CS1* 115 RAS 116 Vss 117 A1 118 A3 119 A5 120 A7 121 A9 122 BA0 123 A11 124 VDD 125 CK1 126 A12 127 Vss 128 CKE0 129 CS3* 130 DQMB6 131 DQMB7 132 NC 133 VDD 134 NC 135 NC 136 CB6 137 CB7 138 Vss 139 DQ48 140 DQ49
141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
DQ50 DQ51 VDD DQ52 NC NC NC Vss DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 V DD DQ60 DQ61 DQ62 DQ63 Vss CK3 NC SA0 SA1 SA2 VDD
Pin Name A0-A12 BA0-BA1 DQ0-DQ63 CB0-CB7 CK0,CK2 CKE0, CS0,CS2 RAS CAS WE DQMB0-DQMB7 VDD VSS SDA SCL SA0-SA2 NC
Function Address input (Row=A 0-A12,Column=A0-A9) Select bank Data input/output Check Bit (Data-in/Data-out) Clock inputs Clock enable input Chip select input Row address strobe Column address strobe Write enable Data input output mask Power supply (3.3V) Ground Serial data I/O Serial clock Address in EEPROM No connection
Note: * : these pins are not used in this module.
CPCB-00609
32MEGX72 (PC133) -
256MB
COMPATIBILITY FEATURES * 33,554,432 words by 72 bits organization
Centon’s 256MB Memory ECC UNBUFFERED Module is fully compatible with industry standard 168 pin PC133 Memory Modules.
* Utilizes PC133 Compliant, SDRAM components * NON-Buffered, 4 clock implementation
APPLICATION
* Single power supply of 3.3V +/- 10%
Main/Expansion Memory Unit for personal omputers, workstations and Power PCs.
* Fully Synchronous with all signals registered positive edge of clock * CAS Latency: 3
ENVIRONMENT
* Support progammable Mode Register * Burst length; 1, 2, 4, 8 or full page
TEMPERATURE HUMIDITY
OPERATING
STORAGE
0oC to 70oC 20% to 80%
-55oC to 125oC 5% to 80%
* 4096 refresh cycles / 64ms * Supports Auto Refresh and Self refresh * All inputs and outputs LVTTL compatible
WARRANTY
* 168 pin JEDEC pin compatible
Centon will repair or replace any Centon memory product that fails due to defective material or workmanship under normal use for the life of the product.
* RoHS compliant
M0360 Rev: 0.0 02/08
©2008 CENTON ELECTRONICS, INC., ALISO VIEJO, CA 92656. ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE. ALL OTHER PRODUCTS AND BRAND NAMES ARE REGISTERED TRADEMARKS OF THEIR RESPECTIVE COMPANIES, AND CENTON DOES NOT REPRESENT THAT SUCH COMPANIES ENDORSE ITS PRODUCTS.
32MEGX72 (PC133)
CENTON Absolute Maximum Ratings Parameter Supply Voltage Voltage on any pin relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature
Symbol VCC VIN, VOUT IOUT Pd TOPR TSTG
Rating -1 to 4.6 -1 to 4.6 50 9 0 to +70 -55 to +125
Units V V mA W C C
Notes: 1. Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. 2. Functional operation should be restricted to recommended operation conditions. 3. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
R e c o m m e n d e d D C O p e ra tin g C o n d itio n s P a ra m e te r S u p p ly V o lta g e In p u t V o lta g e H ig h In p u t L o w V o lta g e
S ym b o l VCC V IH V IL
M in 3 .0 2 .0 -0 .3
T yp 3 .3 -
M ax 3 .6 V C C + 0 .3 0 .8
N o te s 1 1 ,2 1 ,3
U n it V V V
N otes :
1 . A ll v o lta g e s a re re f e re n c e d to V S S = 0 V . 2 . V IH (m a x ) = V C C + 1 .2 V f o r p u ls e w id th w ith < 3 n s o f d u ra tio n 3 . V IL (m in ) = V S S -1 .2 V f o r p u lse w id th w ith < 3 n s o f d u ra tio n .
DC Characteristics I (Ta=0 to 70C, Vcc=3.3+/-0.3V) Parameter (Test Condition) Input leakage current (VIN=0 to 3.6V, all other pins not under test=0V) Output leakage current (DOUT is disabled,VOUT=0 to 3.6V) Output low voltage (lOL=2.0mA) Output high voltage (IOH=-2.0mA)
Symbol ILI ILO VOL VOH
Min -90 -10
Symbol Icc1
Min
Max 90 10 0.4
Note
Unit uA uA V V
Max 675
Note 1
Unit mA
2.4
DC Characteristics II (Ta=0 to 70C, Vcc=3.3+/-0.3V) Parameter Operating Current Precharge standby current in power-down mode
Test Condition Burst Length = 1,tRC>tRC(min),lOL = 0mA
Precharge standby current in non powerdown mode
CKE>VIH(min)=/CS>VIH(min),tCK=min, Input signals are changed one time during 20ns
Active standby current in power-down mode
CKEVIH(min), /CS>VIH(min),tCLK=min, Input signals are changed one time during 20ns
Burst mode current Auto-refresh current
tCLK=min,IOL=0mA,all banks activated tRC>tRC(min)
self-refresh current
CKE < 0.2V
CKEVIH(min),CLKVIH(min),CLK
