Transcript
MITSUBISHI SEMICONDUCTOR
M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION M54580P and M54580FP are seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION INPUT
FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Io(max) = –150mA) Á Active L-level input Á With input diodes Á Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
8
9
VS
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM APPLICATION Drives of relays, printers and indication elements such as LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
VS 30K 7K INPUT 7K OUTPUT 50K
FUNCTION The M54580P and M54580FP each have seven circuits, which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP transistor has a diode and resistance of 7kΩ between the base and input pin. Its emitter and NPN transistor collectors are connected to the VS pin (pin 9). Resistance of 50kΩ is connected between each output pin and GND pin (pin 8). Output current is 150mA maximum. Supply voltage VS is 50V maximum. The M54580FP is enclosed in a molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO
Parameter Collector-emitter voltage
VS VI
Supply voltage
IO
Input voltage Output current
Pd Topr
Power dissipation Operating temperature
Tstg
Storage temperature
GND The seven circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, L
Current per circuit output, H Ta = 25°C, when mounted on board
Ratings –0.5 ~ +50
Unit V
50 –0.5 ~ VS
V V
–150
mA
1.47(P)/1.00(FP) –20 ~ +75
W °C
–55 ~ +125
°C Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
min
Limits typ
4
—
50
0
—
–100
0
—
–50
VS–0.4
—
0
—
VS VS–3.2
Parameter Supply voltage
VS
VIH
Output current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage
VIL
“L” input voltage
IO
Duty Cycle P : no more than 85% FP : no more than 50% Duty Cycle P : no more than 100% FP : no more than 100%
ELECTRICAL CHARACTERISTICS
max
Unit V
mA
V V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Symbol
Parameter
Test conditions
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
VI = VS–3.2V, IO = –100mA Collector-emitter saturation voltage VI = VS–3.2V, IO = –50mA
II
Input current
VI = VS–3.5V VI = VS–6V
IR h FE
Clamping diode reverse current DC amplification factor
VI = 40V VCE = 4V, VS = 10V, I C = –100mA, Ta = 25°C
min 50
ICEO = 100µA
typ+ —
—
0.9
1.5
— —
0.8 –0.3
1.2 –0.6
—
–0.65
–0.95
—
— 3000
100 —
800
Unit
max —
V V mA µA —
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol
Parameter Turn-on time
ton toff
CL = 15pF (note 1)
Turn-off time
NOTE 1 TEST CIRCUIT INPUT
Limits
Test conditions
min
typ
max
— —
200 7500
— —
Unit ns ns
TIMING DIAGRAM VS INPUT 50%
Measured device
50%
OUTPUT
PG 50Ω
RL
CL
50%
50%
OUTPUT ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0.8 to 4V (2) Input-output conditions : RL = 40Ω, , VS = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics
Thermal Derating Factor Characteristics –200
2.0
M54580P
1.5
Output current IO (mA)
Power dissipation Pd (W)
VS = 10V VI = 6.8V
M54580FP
1.0
0.5
–150
–100 Ta = 75°C Ta = 25°C
–50 Ta = –20°C
0
0
25
50
75
0
100
0.5
1.5
2.0
Duty-Cycle-Output Current Characteristics (M54580P) –200
–160
–160
➀ to ➄ ➅ ➆
–120
–80 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
–40
0
20
40
60
80
Output current IO (mA)
Duty-Cycle-Output Current Characteristics (M54580P) –200
0
–120
➄ ➅ ➆
–80 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
–40
0
100
➀ to ➂ ➃
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%) Duty-Cycle-Output Current Characteristics (M54580FP) –200
Duty-Cycle-Output Current Characteristics (M54580FP) –200
–160
–160
➀ to ➂ ➃ ➄ ➅ ➆
–120
–80 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
–40
0
0
20
40
60
Duty cycle (%)
80
100
Output current IO (mA)
Output current IO (mA)
1.0
Output saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
Output current IO (mA)
0
➀ to ➁
–120
➂
–80
➃ ➄ ➅ ➆
•The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C
–40
0
0
20
40
60
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DC Amplification Factor Output Current Characteristics
Grounded Emitter Transfer Characteristics 104
–200
7
DC amplification factor hFE
Output current IO (mA)
VS = 10V VCE = 4V
–150
–100
Ta = 75°C Ta = 25°C Ta = –20°C
–50
0
0
1.0
2.0
3.0
4.0
Supply voltage-Input voltage VS–VI (V)
VS = 10V VCE = 4V
Ta = 75°C
Ta = 25°C
5 3
Ta = –20°C
2
103 7 5 3 2
102 1 10
2
3
5 7 102
2
3
5 7 103
Output current IO (mA)
Input Characteristics –5 VS = 20V
Input current II (mA)
–4
–3
Ta = –20°C Ta = 25°C
–2
–1
0
Ta = 75°C
0
5
10
15
20
Supply voltage-Input voltage VS–VI (V)
Aug. 1999
