Transcript
MCC56-12io1B
Thyristor Module
VRRM
= 2x 1200 V
I TAV
=
60 A
VT
=
1.24 V
Phase leg
Part number
MCC56-12io1B
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
Applications:
Package: TO-240AA
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCC56-12io1B Ratings
Thyristor Conditions
Symbol V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max. 1300
Unit V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
V
I R/D
reverse current, drain current
VR/D = 1200 V
TVJ = 25°C
200
µA
VR/D = 1200 V
TVJ = 125°C
5
mA
I T = 100 A
TVJ = 25°C
1.26
V
1.57
V
1.24
V
VT
forward voltage drop
min.
typ.
I T = 200 A TVJ = 125 °C
I T = 100 A I T = 200 A I TAV
average forward current
TC = 85°C 180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.62
V
T VJ = 125 °C
60
A
100
A
TVJ = 125 °C
0.85
V
222
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.50
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.62
kA
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
1.28
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.38
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
11.3 kA²s
t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine
VR = 0 V
10.9 kA²s
TVJ = 125 °C
8.13 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 125 °C
7.87 kA²s 74
t P = 300 µs average gate power dissipation critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ K/W
TC = 25°C
CJ
PGAV
3.7 0.45
TVJ = 125°C; f = 50 Hz
repetitive, IT = 150 A
pF 10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT =
60 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 125°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C TVJ = -40 °C
1.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
100
mA
TVJ = -40 °C
200
mA
TVJ = 125 °C
0.2
V
10
mA
TVJ = 25 °C
450
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM t p = 10 µs
1.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
200
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
150
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCC56-12io1B Package
Ratings
TO-240AA
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max. 200
Unit A
-40
125
°C
-40
100
°C
125
°C
Weight
90
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App d Spb/Apb VISOL
creepage distance on surface | striking distance through air
t = 1 minute
Part Number MCC56-12io1B
Similar Part MCMA65P1200TA MCMA85P1200TA
Equivalent Circuits for Simulation I
V0
R0
13.0 16.0
t = 1 second
isolation voltage
Ordering Standard
terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA
Marking on Product MCC56-12io1B
Package TO-240AA-1B TO-240AA-1B
* on die level
Delivery Mode Box
mm
16.0
mm
3600
V
3000
V
Quantity 6
Code No. 452742
Voltage class 1200 1200
T VJ = 125 °C
Thyristor
V 0 max
threshold voltage
0.85
V
R 0 max
slope resistance *
2.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
9.7
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCC56-12io1B Outlines TO-240AA
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
6
7
1
5
4
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCC56-12io1B Thyristor 1500
120
105 VR = 0 V
50 Hz, 80% VRRM
DC 180° sin 120° 60° 30°
100
80
1000
I2t
ITSM IFSM
TVJ = 45°C
ITAVM 104
[A]
[A]
[A2s] 500
60
TVJ = 45°C TVJ = 125°C
TVJ = 125°C
40
20
0 10-3
103 10-2
10-1
100
101
1
2
3
6
8
0
10
0
t [ms]
t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
RthJA
100
150
TC [°C] Fig. 3 Maximum forward current at case temperature
Fig. 2 I2t versus time (1-10 ms)
150
50
10
[K/W]
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
0.8 1 1.2 100
1.5
VG
2
PT [W]
3
4
[V]
4
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
IGD, TVJ = 125°C 0
0
20
40
60
80
6
5
1
3 DC 180° sin 120° 60° 30°
50
2
1
2.5
0
ITAVM, IFAVM [A]
50
100
0.1 100
150
101
TA [°C]
102
103
104
IG [mA]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
Fig. 5 Gate trigger charact. 1000
600
RthKA
[K/W]
TVJ = 25°C
0.1 500
0.15 0.2
400
Ptot 300
[W]
typ.
100
0.25 0.3
tgd
0.4
[µs]
Limit
0.5 200
100
10
0.6
Circuit B6 3x MCC56 or 3x MCD56
0 0
50
100
150
IdAVM [A]
0
50
100
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
150
1 10
100
1000
IG [mA] Fig. 7 Gate trigger delay time
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCC56-12io1B Thyristor 600
RthJA
[KW] 0.1
500
0.15 0.2
400
0.25
Ptot
0.3 300
0.4
[W]
0.5
Circuit W3 3x MCC56 or 3x MCD56
200
0.6
100
0
0
50
100
0
50
IRMS [A]
100
150
TA [°C]
Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature
0.6
RthJC for various conduction angles d: 30°
0.5
60° 120° 180°
0.4
DC
0.3
DC
0.450
180°
0.470
120°
0.490
60°
0.505
30°
0.520
Constants for ZthJC calculation:
0.2
0.1
0 10-3
10-2
10-1
100
101
102
1
0.014
0.0150
2
0.026
0.0095
3
0.410
0.1750
103
Fig. 9 Transient thermal impedance junction to case (per thyristor)
RthJK for various conduction angles d:
0.8 30° 60°
DC 180° 120° 60° 30°
120°
0.6
180° DC
0.4
0.650 0.670 0.690 0.705 0.720
Constants for ZthJK calculation: 1 2 3 4
0.2
0 10-3
10-2
10-1
100
101
102
0.014 0.026 0.410 0.200
0.0150 0.0095 0.1750 0.6700
103
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
