Transcript
MCD94-22io1B
Thyristor Module
VRRM
= 2x 2200 V
I TAV
=
104 A
VT
=
1.46 V
Phase leg
Part number
MCD94-22io1B
Backside: isolated
3
1
5
4
2
Features / Advantages:
Applications:
Package: TO-240AA
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD94-22io1B Ratings
Rectifier Conditions
Symbol V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max. 2100
Unit V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
2200
V
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
VR/D = 2200 V
TVJ = 25°C
200
µA
VR/D = 2200 V
TVJ = 125°C
15
mA
I T = 150 A
TVJ = 25°C
1.44
V
1.74
V
1.46
V
I T = 300 A TVJ = 125 °C
I T = 150 A I T = 300 A I TAV
average forward current
TC = 85°C 180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.99
V
T VJ = 125 °C
104
A
180
A
TVJ = 125 °C
0.85
V
455
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.70
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.84
kA
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
1.45
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.56
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
14.5 kA²s
t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine
VR = 0 V
14.0 kA²s
TVJ = 125 °C
10.4 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 700 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 125 °C
10.1 kA²s 63
t P = 300 µs average gate power dissipation critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ K/W
TC = 25°C
CJ
PGAV
3.2 0.22
TVJ = 125°C; f = 50 Hz
repetitive, IT = 250 A
pF 10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT = 104 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 125°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C TVJ = -40 °C
1.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
150
mA
TVJ = -40 °C
200
mA
TVJ = 125 °C
0.25
V
10
mA
TVJ = 25 °C
200
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM t p = 10 µs
1.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
150
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
185
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD94-22io1B Package
Ratings
TO-240AA
Symbol I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max. 200
Unit A
-40
125
°C
-40
125
°C
Weight
90
MD
mounting torque
MT
terminal torque
d Spp/App d Spb/Apb VISOL
creepage distance on surface | striking distance through air
t = 1 minute
Ordering Standard
Part Number MCD94-22io1B
Equivalent Circuits for Simulation I
V0
R0
2.5
4
Nm Nm
9.7
mm
terminal to backside
16.0
16.0
mm
3600
V
3000
V
Delivery Mode Box
Quantity 6
Code No. 470244
T VJ = 125 °C
Thyristor
V 0 max
threshold voltage
0.85
R 0 max
slope resistance *
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
* on die level
4
13.0
50/60 Hz, RMS; IISOL ≤ 1 mA
Marking on Product MCD94-22io1B
2.5 terminal to terminal
t = 1 second
isolation voltage
g
V mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD94-22io1B Outlines TO-240AA
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1
5
4
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD94-22io1B Thyristor 10
1000
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
TVJ = 25°C
typ.
100
VG 2
1
tgd
3 5
6
1
[V]
Limit
[µs]
4
10
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
IGD, TVJ = 125°C
0.1 100
101
102
103
104
1 10
IG [mA] Fig. 1 Gate trigger characteristics
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
100
1000
IG [mA] Fig. 2 Gate trigger delay time
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
