Transcript
MCMA700P1600NCA
Thyristor Module
VRRM
= 2x 1600 V
I TAV
=
700 A
VT
=
1.16 V
Phase leg optional usage as Dual Thyristor Triac Part number
MCMA700P1600NCA
Backside: isolated
Three Quadrants Operation T2
Positive Half Cycle +
(-) IGT
3
(+) IGT T1 REF
IGT -
T2
T2
6
7
1
5
4
2
T1
QII QI QIII QIV
REF + IGT
(-) IGT T1 REF
Negative Half Cycle
Note: All Polarities are referenced to T1
Features / Advantages:
Applications:
Package: ComPack
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Gate current polarities - upper SCR (2 -> 1) = positive/negative - lower SCR (1 -> 3) = negative
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Phase Change Material available
Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20141127a
MCMA700P1600NCA Ratings
Rectifier Conditions
Symbol VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
TVJ = 25°C
2
mA
TVJ = 125°C
40
mA
I T = 700 A
TVJ = 25°C
1.20
V
1.45
V
1.16
V
TVJ = 125 °C
I T = 1400 A
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
V
VR/D = 1600 V
I T = 700 A average forward current
1600
VR/D = 1600 V I T = 1400 A
I TAV
max. Unit 1700 V
TC = 85 °C
1.46
V
T VJ = 140 °C
700
A
TVJ = 140 °C
0.82
V
0.4
mΩ
180° sine for power loss calculation only
RthCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
0.05 K/W 0.02
K/W
TC = 25°C
2300
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
19.0
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
20.5
kA
t = 10 ms; (50 Hz), sine
TVJ = 140 °C
16.2
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
17.4
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.81 MA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.75 MA²s
t = 10 ms; (50 Hz), sine
TVJ = 140 °C
1.30 MA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 140 °C
1.27 MA²s 876
pF 240
W
t P = 300 µs
120
W
40
W
100 A/µs
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 140 °C; f = 50 Hz repetitive, IT =2100 A t P = 200 µs; di G /dt = 1 A/µs;
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C TVJ = -40 °C
3
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
± 300
mA
TVJ = -40 °C
± 400
mA
VGD
gate non-trigger voltage
TVJ = 140°C
0.25
V
I GD
gate non-trigger current
± 10
mA
IL
latching current
TVJ = 25 °C
400
mA
IG =
1 A; V = ⅔ VDRM
non-repet., I T = 700 A
500 A/µs 1000 V/µs
TVJ = 140°C
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM tp = IG =
30 µs 1 A; di G /dt =
2
V
1 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
300
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
1 A; di G /dt =
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
1 A/µs
VR = 100 V; I T = 700 A; V = ⅔ VDRM TVJ =125 °C
350
µs
50 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20141127a
MCMA700P1600NCA Package
Ratings
ComPack
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
max. 1200
Unit A
-40
140
°C
-40
125
°C
125
°C
500
Weight MD
mounting torque
MT
terminal torque
d Spp/App
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
d Spb/Apb VISOL
typ.
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
g
3
5
Nm
12
14
Nm
21.0
mm
18.0
mm
4800
V
4000
V
Part description
Circuit Diagram
Assembly Line Date Code Part No.
yywwA YYYYYYYYYYY
Ordering Standard
2D Matrix
Ordering Number MCMA700P1600NCA
Equivalent Circuits for Simulation I
V0
M C M A 700 P 1600 N CA
R0
= = = = = = = = =
Marking on Product MCMA700P1600NCA
* on die level
Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] Three Quadrants operation: QI - QIII ComPack
Delivery Mode Box
Code No. 515494
T VJ = 140 °C
Thyristor
V 0 max
threshold voltage
0.82
V
R0 max
slope resistance *
0.21
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Quantity 2
Data according to IEC 60747and per semiconductor unless otherwise specified
20141127a
MCMA700P1600NCA Outlines ComPack
0,5 37,5 -+0,0
label
0,2 3,0 + - 0,0
0,8
2,8
27,25 ±0,3
21 ±1,0
0,7 48,0 + - 0,0
A(2:1)
50,5 ±1,0
0,0 66,0 + - 0,7
baseplate typ. 100 µm convex over 62,5 mm before mounting
0,5 92,0 + - 0,3 107±0,5 48,0
M10x16 (3x)
Ø
6,1 25,85 ±0,30
65,0 ± 0,5
30,0 ± 0,5
23,0
0,5 30,0 -+0,0
61,0
baseplate typ. 100 µm convex over 54,5 mm before mounting
5,0 ± 0,2
21,2 7,2
A
45,0
39,5 ± 0,5
6,0
5,5
18,0 80,0 93,5
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
6
7
1
5
4
Data according to IEC 60747and per semiconductor unless otherwise specified
2
20141127a
MCMA700P1600NCA Thyristor 1400
107
16000
VR = 0 V
50 Hz, 80% VRRM 1200 14000 1000
IT
12000
800
[A]
600
[A2s]
[A]
140°C
TVJ = 45°C
106
10000
TVJ = 125°C 400
2
It
TVJ = 45°C
ITSM
TVJ = 140°C
TVJ = 140°C
8000 200
TVJ = 25°C
0 0.4
105
6000 0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
VT [V]
1
Fig. 3 I t versus time (1-10 s)
1400 1200 TVJ = 125°C
10.0
VG [V]
800
ITAVM
600
lim.
[μs] 1
dc = 1 0.5 0.4 0.33 0.17 0.08
1000
tgd
[A]
1.0
typ.
400
IGT (TVJ = -40°C) IGT (TVJ = 25°C) IGD (TVJ = 140°C)
1
4 5 6 7 8 910
t [ms]
100.0
10
0.1
3
2
Fig. 2 Surge overload current ITSM: crest value, t: duration
PGM = 240 W; tp = 30 µs 120 W; tp = 300 µs PGAV = 40 W
0.1 0.01
2
t [s]
Fig. 1 Forward characteristics
100
1
200 0.1 0.01
10
0 0.10
1.00
10.00
0
40
IG [A]
IG [A]
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
80
120
160
Tcase [°C] Fig. 6 Max. forward current at case temperature
0.06 dc = 1 0.5 0.4 0.33 0.17 0.08
1000
800
Ptot 600
[W]
i Rthi (K/W) 1 0.0020 2 0.0080 3 0.0130 4 0.0370
0.05
RthHA 0.05 0.10 0.20 0.30 0.40 0.50
0.04
ZthJC
ti (s) 0.0150 0.0800 0.2200 0.3800
0.03
[K/W]
400
0.02
200
0.01 0.00
0 0
200 400 600 800
IT(AV) [A]
0
40
80
120
160
Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20141127a
