Transcript
MDD95-22N1B
Standard Rectifier Module
VRRM
= 2x 2200 V
I FAV
=
120 A
VF
=
1.13 V
Phase leg
Part number
MDD95-22N1B
Backside: isolated
2
1
3
Features / Advantages:
Applications:
Package: TO-240AA
● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130702a
MDD95-22N1B Ratings
Rectifier Conditions
Symbol VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max. 2300
Unit V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
2200
V
IR
reverse current
VF
forward voltage drop
min.
typ.
VR = 2200 V
TVJ = 25°C
200
µA
VR = 2200 V
TVJ = 150°C
15
mA
I F = 150 A
TVJ = 25°C
1.20
V
1.43
V
1.13
V
I F = 300 A TVJ = 125 °C
I F = 150 A I F = 300 A I FAV
average forward current
TC = 100°C 180° sine
I F(RMS)
RMS forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.46
V
T VJ = 150 °C
120
A
180
A
TVJ = 150 °C
0.75
V
1.95
mΩ
0.26
K/W K/W
0.20 TC = 25°C
481
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2.80
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
3.03
kA
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
2.38
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.57
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
39.2 kA²s
t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine
VR = 0 V
38.1 kA²s
TVJ = 150 °C
28.3 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
27.5 kA²s 116
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20130702a
MDD95-22N1B Package
Ratings
TO-240AA
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max. 200
Unit A
-40
150
°C
-40
125
°C
125
°C
Weight
90
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App d Spb/Apb VISOL
creepage distance on surface | striking distance through air
terminal to terminal
13.0
terminal to backside
16.0
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
9.7
mm
16.0
mm
3600
V
3000
V
Circuit Diagram
Part Number YYYYWWx Date Code
FKT
Production Code
Ordering Standard
Data Matrix
Part Number MDD95-22N1B
Equivalent Circuits for Simulation I
V0
R0
Marking on Product MDD95-22N1B
* on die level
Delivery Mode Box
Code No. 470236
T VJ = 150 °C
Rectifier
V 0 max
threshold voltage
0.75
V
R 0 max
slope resistance *
0.76
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity 6
Data according to IEC 60747and per semiconductor unless otherwise specified
20130702a
MDD95-22N1B Outlines TO-240AA
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20130702a
MDD95-22N1B Rectifier 250
105
3000
VR = 0 V
50 Hz, 80% V RRM 2500
DC 180° sin 120° 60° 30°
200
2000
IFSM
150
I2t
TVJ = 45°C
IFAVM
TVJ = 45°C
1500
[A]
100
[A2s]
[A]
1000
TVJ = 150°C
TVJ = 150°C 50
500
0 10-3
104 10-2
10-1
100
101
0 1
2
3
6
8
10
0
t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
100
150
200
Fig. 3 Maximum forward current at case temperature
Fig. 2 I2t versus time (1-10 ms)
200
50
TC [°C]
t [ms]
RthJA
[K/W] 0.4 0.6
150
0.8 1
PT
1.2 100
1.5
[W]
2 DC 180° sin 120° 60° 30°
50
0
0
50
100
150
3
0
50
ITAVM, IFAVM [A]
100
150
200
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800
RthKA
[K/W] 0.1 0.15
600
0.2 R
L 0.3
Ptot
0.4 400
0.5
[W]
0.6
0
0.7
Circuit B2 2x MDD95
200
0
50
100
150
200
250
IdAVM [A]
0
50
100
150
200
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130702a
MDD95-22N1B Rectifier 1000
RthJA
[KW] 0.03 0.06
800
0.08 0.12
Ptot
600
[W]
400
0.15 0.3 0.5
Circuit B6 3x MDD95
200
0
0
100
200
300
0
50
100
IDAVM [A]
150
200
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.4
RthJC for various conduction angles d: d RthJC [K/W]
30° 60° 120°
0.3
180° DC
ZthJC 0.2
[K/W]
DC
0.26
180°
0.28
120°
0.30
60°
0.34
30°
0.38
Constants for ZthJC calculation: i Rthi [K/W]
0.1
0 10-3
10-2
10-1
100
101
102
ti [s]
1
0.013
0.0012
2
0.072
0.0470
3
0.175
0.3940
103
t [s] Fig. 7 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: d RthJK [K/W] DC 0.46 180° 0.48 120° 0.50 60° 0.54 30° 0.58
0.6 30° 0.5
60° 120° 180°
0.4
DC
ZthJK 0.3
Constants for ZthJK calculation:
[K/W] 0.2
i Rthi [K/W] 1 2 3 4
0.1
0 10-3
10-2
10-1
100
101
102
103
0.013 0.072 0.175 0.200
ti [s] 0.0012 0.0470 0.3940 1.3200
104
t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130702a
