Transcript
Power Module 1200V 100A IGBT Module
MG12105S-BA1MM
RoHS ®
Features • Ultra Low Loss
• P ositive Temperature Coefficient
• High Ruggedness
• W ith Fast Free-Wheeling Diodes
• H igh Short Circuit Capability Applications
• SMPS and UPS
• Converter
• Induction Heating
• Welder
Agency Approvals AGENCY
• Inverter
AGENCY FILE NUMBER E71639
Module Characteristics (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Junction-to-Case Thermal Resistance
Per IGBT
0.18
K/W
Per Inverse Diode
0.45
K/W
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M5)
2.5
5
N·m
RthJC RthJCD
Weight
Min
Typ
Max
Unit
150
g
Values
Unit V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
IGBT VCES
Collector - Emitter Voltage
1200
VGES
Gate - Emitter Voltage
±20
V
150
A A
IC
TC=25°C
DC Collector Current
ICpuls
Pulsed Collector Current
TC=80°C
105
TC=25°C, tp=1ms
300
TC=80°C, tp=1ms
210
A
Ptot
Power Dissipation Per IGBT
690
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
AC, t=1min
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
V
125
A
TC=80°C
85
A
122
A
TJ =45°C, t=10ms, Sine
930
TJ =45°C, t=8.3ms, Sine
980
Average Forward Current RMS Forward Current
IF(RMS) IFSM
1200 TC=25°C
Non-Repetitive Surge Forward Current
A
Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12105S-BA1MM
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©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1200V 100A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=4mA
5.0
6.2
7.0
V
Collector - Emitter Saturation Voltage
IC=100A, VGE=15V, TJ=25°C
1.8
IC=100A, VGE=15V, TJ=125°C
2.0
VCE=1200V, VGE=0V, TJ=25°C
0.2
IGBT VGE(th) VCE(sat) ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V,VGE=±20V
Qge
Gate Charge
VCC=600V, IC=100A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE=1200V, VGE=0V, TJ=125°C
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=25V, VGE=0V, f =1MHz
Fall Time
Eon
Turn - on Energy
Eoff
3 -200
mA mA
200 1050
nA nC nF
0.52 0.34
VCC=600V IC=100A RG =10Ω
tf
V 0.5
7.43
Turn - on Delay Time
td(on)
V
VGE=±15V Inductive Load
Turn - off Energy
TJ =25°C
125
ns
TJ =125°C
135
ns
TJ =25°C
60
ns
TJ =125°C
60
ns
TJ =25°C
420
ns
TJ =125°C
490
ns
TJ =25°C
60
ns
TJ =125°C
75
ns
TJ =25°C
8.6
mJ
TJ =125°C
12.4
mJ
TJ =25°C
6.8
mJ
TJ =125°C
10.8
mJ
Diode VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
MG12105S-BA1MM
IF=100A , VGE=0V, TJ =25°C
2.0
2.44
IF=100A , VGE=0V, TJ =125°C
1.7
2.20
IF=100A , VR=800V diF/dt=-1000A/μs TJ =125°C
220
2 83
V V ns
85
A
9.8
μC
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1200V 100A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: T ypical Transfer characteristics
300
300
250
250 200 TJ =25°C
IC (A)
IC (A)
200 150 TJ =125°C
100
TJ =25°C
150 100
50 0 0
0.5
1
1.5 2.5 2 VCE(sat)˄V˅
3
3.5
0
40
Eon Eoff (mJ)
Eon Eoff (mJ)
VCC=600V RG=10ohm VGE=±15V TJ =125°C
Eon
40 20
50
100 150 200 IC˄A˅
VCC=600V IC=100A VGE=±15V TJ =125°C
30
250 300
0
350
14
Eon
0
10
20
30 40 50 RG˄ohm˅
70
60
1000 td(off)
td(on)
t (ns)
t (ns)
12
Eoff
td(off)
tr
td(on)
100
tf tr
tf
MG12105S-BA1MM
10
Figure 6: S witching Times vs. Gate Resistor
1000
10 0
6 8 VGE˄V˅
20 10
Eoff
Figure 5: Switching Times vs. Collector Current
100
4
50
60
0 0
2
0
Figure 4: Switching Energy vs. Gate Resistor
120
80
TJ =125°C
50
Figure 3: Switching Energy vs. Collector Current
100
VCE=20V
VCC=600V RG=10ohm VGE=±15V TJ =125°C
30
60
90 120 IC˄A˅
150 180
10
210
3 84
VCC=600V IC=100A VGE=±15V TJ =125°C
0
5
10
15 20 25 RG˄ohm˅
30
35
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1200V 100A IGBT Module
Figure 7: Gate Charge characteristics
Figure 8: Typical Capacitances vs. VCE
25
10 Cies
VCC=600V IC=100A TJ =25°C
20
C (nF)
VGE (V)
15 10
VGE =0V f=1MHz
1
Coes Cres
5 0 0
0.2
0.4 0.6 Qg˄µC˅
0.8
0.1
1.0
5
10
20
25
30
35
Figure 10: Short Circuit Safe Operating Area
350
1800
300
1500
250
120
ICsc (A)
200 150
900 600
100 TJ =150°C TC =25°C VGE =15V
50 0 0
200
400
TJ =150°C TC =25°C VGE =15V tscİ10µs
300 0
600 800 1000 1200 1400 VCE˄V˅
Figure 11: Rated Current vs. TC
0
200
400 600 800 1000 1200 1400 VCE˄V˅
Figure 12: D iode Forward Characteristics 300
175 TJ =150°C VGE ı15V
150
250
125
200
100
TJ =125°C
IF (A)
IC(A)
15
VCE˄V˅
Figure 9: Reverse Biased Safe Operating Area
ICpuls (A)
0
75
150
50
100
25
50
0 0
MG12105S-BA1MM
TJ =25°C
25
50 75 100 125 150 TC Case Temperature(°C)
0
175
4 85
0
0.5
1.0
1.5 2.0 2.5 VF˄V˅
3
3.5
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1200V 100A IGBT Module
Figure 13: Transient Thermal Impedance of IGBT
Figure 14: Transient Thermal Impedance of Diode 1
1
-1
-1
10
-2
10
Duty 0.5 0.2 0.1 0.05 Single Pulse
ZthJC (K/W)
ZthJC (K/W)
10
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
10-3
10-4 -4 -3 -2 -1 10 10 10 10 1 Rectangular Pulse Duration (seconds)
10
-4
Dimensions-Package S
10-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds)
Circuit Diagram
1 3
2
4
MG12105S-BA1MM
5 86
5
6
7
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1200V 100A IGBT Module
Packing Options Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12105S-BA1MM
MG12105S-BA1MM
150g
Bulk Pack
100
Part Marking System
Part Numbering System
MG12 105 S - B A1 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING 105: 105A
MG12105S-BA1MM
ASSEMBLY SITE
MG12105S-BA1MM
WAFER TYPE CIRCUIT TYPE B: 2x(IGBT+FWD)
LOT NUMBER
Space reserved for QR code
PACKAGE TYPE S: Package S
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©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15