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Mg12105s-ba1mm Power Module 1200v 100a Igbt Module

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Power Module 1200V 100A IGBT Module MG12105S-BA1MM RoHS ® Features • Ultra Low Loss • P  ositive Temperature Coefficient • High Ruggedness • W  ith Fast Free-Wheeling Diodes • H  igh Short Circuit Capability Applications • SMPS and UPS • Converter • Induction Heating • Welder Agency Approvals AGENCY • Inverter AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Junction-to-Case Thermal Resistance Per IGBT 0.18 K/W Per Inverse Diode 0.45 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m RthJC RthJCD Weight Min Typ Max Unit 150 g Values Unit V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 1200 VGES Gate - Emitter Voltage ±20 V 150 A A IC TC=25°C DC Collector Current ICpuls Pulsed Collector Current TC=80°C 105 TC=25°C, tp=1ms 300 TC=80°C, tp=1ms 210 A Ptot Power Dissipation Per IGBT 690 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V AC, t=1min Diode VRRM Repetitive Reverse Voltage IF(AV) V 125 A TC=80°C 85 A 122 A TJ =45°C, t=10ms, Sine 930 TJ =45°C, t=8.3ms, Sine 980 Average Forward Current RMS Forward Current IF(RMS) IFSM 1200 TC=25°C Non-Repetitive Surge Forward Current A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12105S-BA1MM 1 82 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 6.2 7.0 V Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 1.8 IC=100A, VGE=15V, TJ=125°C 2.0 VCE=1200V, VGE=0V, TJ=25°C 0.2 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V,VGE=±20V Qge Gate Charge VCC=600V, IC=100A , VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE=1200V, VGE=0V, TJ=125°C tr Rise Time td(off) Turn - off Delay Time VCE=25V, VGE=0V, f =1MHz Fall Time Eon Turn - on Energy Eoff 3 -200 mA mA 200 1050 nA nC nF 0.52 0.34 VCC=600V IC=100A RG =10Ω tf V 0.5 7.43 Turn - on Delay Time td(on) V VGE=±15V Inductive Load Turn - off Energy TJ =25°C 125 ns TJ =125°C 135 ns TJ =25°C 60 ns TJ =125°C 60 ns TJ =25°C 420 ns TJ =125°C 490 ns TJ =25°C 60 ns TJ =125°C 75 ns TJ =25°C 8.6 mJ TJ =125°C 12.4 mJ TJ =25°C 6.8 mJ TJ =125°C 10.8 mJ Diode VF Forward Voltage trr Reverse Recovery Time IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge MG12105S-BA1MM IF=100A , VGE=0V, TJ =25°C 2.0 2.44 IF=100A , VGE=0V, TJ =125°C 1.7 2.20 IF=100A , VR=800V diF/dt=-1000A/μs TJ =125°C 220 2 83 V V ns 85 A 9.8 μC ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: T  ypical Transfer characteristics 300 300 250 250 200 TJ =25°C IC (A) IC (A) 200 150 TJ =125°C 100 TJ =25°C 150 100 50 0 0 0.5 1 1.5 2.5 2 VCE(sat)˄V˅ 3 3.5 0 40 Eon Eoff (mJ) Eon Eoff (mJ) VCC=600V RG=10ohm VGE=±15V TJ =125°C Eon 40 20 50 100 150 200 IC˄A˅ VCC=600V IC=100A VGE=±15V TJ =125°C 30 250 300 0 350 14 Eon 0 10 20 30 40 50 RG˄ohm˅ 70 60 1000 td(off) td(on) t (ns) t (ns) 12 Eoff td(off) tr td(on) 100 tf tr tf MG12105S-BA1MM 10 Figure 6: S  witching Times vs. Gate Resistor 1000 10 0 6 8 VGE˄V˅ 20 10 Eoff Figure 5: Switching Times vs. Collector Current 100 4 50 60 0 0 2 0 Figure 4: Switching Energy vs. Gate Resistor 120 80 TJ =125°C 50 Figure 3: Switching Energy vs. Collector Current 100 VCE=20V VCC=600V RG=10ohm VGE=±15V TJ =125°C 30 60 90 120 IC˄A˅ 150 180 10 210 3 84 VCC=600V IC=100A VGE=±15V TJ =125°C 0 5 10 15 20 25 RG˄ohm˅ 30 35 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. VCE 25 10 Cies VCC=600V IC=100A TJ =25°C 20 C (nF) VGE (V) 15 10 VGE =0V f=1MHz 1 Coes Cres 5 0 0 0.2 0.4 0.6 Qg˄µC˅ 0.8 0.1 1.0 5 10 20 25 30 35 Figure 10: Short Circuit Safe Operating Area 350 1800 300 1500 250 120 ICsc (A) 200 150 900 600 100 TJ =150°C TC =25°C VGE =15V 50 0 0 200 400 TJ =150°C TC =25°C VGE =15V tscİ10µs 300 0 600 800 1000 1200 1400 VCE˄V˅ Figure 11: Rated Current vs. TC 0 200 400 600 800 1000 1200 1400 VCE˄V˅ Figure 12: D  iode Forward Characteristics 300 175 TJ =150°C VGE ı15V 150 250 125 200 100 TJ =125°C IF (A) IC(A) 15 VCE˄V˅ Figure 9: Reverse Biased Safe Operating Area ICpuls (A) 0 75 150 50 100 25 50 0 0 MG12105S-BA1MM TJ =25°C 25 50 75 100 125 150 TC Case Temperature(°C) 0 175 4 85 0 0.5 1.0 1.5 2.0 2.5 VF˄V˅ 3 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 13: Transient Thermal Impedance of IGBT Figure 14: Transient Thermal Impedance of Diode 1 1 -1 -1 10 -2 10 Duty 0.5 0.2 0.1 0.05 Single Pulse ZthJC (K/W) ZthJC (K/W) 10 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 10-3 10-3 10-4 -4 -3 -2 -1 10 10 10 10 1 Rectangular Pulse Duration (seconds) 10 -4 Dimensions-Package S 10-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Circuit Diagram 1 3 2 4 MG12105S-BA1MM 5 86 5 6 7 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12105S-BA1MM MG12105S-BA1MM 150g Bulk Pack 100 Part Marking System Part Numbering System MG12 105 S - B A1 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING 105: 105A MG12105S-BA1MM ASSEMBLY SITE MG12105S-BA1MM WAFER TYPE CIRCUIT TYPE B: 2x(IGBT+FWD) LOT NUMBER Space reserved for QR code PACKAGE TYPE S: Package S 6 87 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15