Mg17100d-bn4mm Power Module 1700v 100a Igbt Module

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Power Module 1700V 100A IGBT Module MG17100D-BN4MM RoHS ® Features • IGBT3 CHIP(1700V Trench+Field Stop technology) • D  IODE CHIP(1700V EMCON 3 technology) • L  ow turn-off losses, short tail current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE(sat) with positive temperature coefficient Applications • H  igh frequency switching application Agency Approvals AGENCY • Motion/servo control • UPS systems • Medical applications AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) TJ op Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index -40 -40 AC, t=1min Max Unit 150 °C 125 °C 125 °C 4000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1700 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 150 A TC=80°C 100 A tP=1ms 200 A 690 W TC=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current It 2 TJ=25°C 1700 V TC=25°C 150 A TC=80°C 100 A tP=1ms 200 A TJ =125°C, t=10ms, VR=0V 1650 A 2S Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG17100D-BN4MM 1 265 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4.0mA 5.2 Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 5.8 6.4 V 2.0 2.45 IC=100A, VGE=15V, TJ=125°C 2.4 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1700V, VGE=0V, TJ=25°C 3 mA VCE=1700V, VGE=0V, TJ=125°C 20 mA 400 nA VCE=0V,VGE=±20V, TJ=125°C VCE=900V, IC=100A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=900V IC=100A RG =4Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC V V VGE=±15V Inductive Load -400 4.8 Ω 1.2 μC 9 nF 0.3 nF TJ =25°C 370 ns TJ =125°C 400 ns TJ =25°C 40 ns TJ =125°C 50 ns TJ =25°C 650 ns TJ =125°C 800 ns TJ =25°C 180 ns TJ =125°C 300 ns TJ =25°C 22 mJ TJ =125°C 32 mJ TJ =25°C 21 mJ TJ =125°C 31 mJ 400 A tpsc≤10μS , VGE=15V; TJ=125°C,VCC=1000V Junction-to-Case Thermal Resistance (Per IGBT) 0.18 K/W Diode VF Forward Voltage IF=100A , VGE=0V, TJ =25°C 1.8 IF=100A , VGE=0V, TJ =125°C 1.9 2.2 V V A IRRM Max. Reverse Recovery Current IF=100A , VR=900V 160 Qrr Reverse Recovery Charge diF/dt=-2400A/μs 48 μC Erec Reverse Recovery Energy TJ=125°C 27 mJ RthJCD MG17100D-BN4MM Junction-to-Case Thermal Resistance (Per Diode) 2 266 0.26 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 200 200 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 160 Tj =25°C 120 IC (A) IC (A) 160 80 120 Tj =125°C 80 Tj =125°C 40 40 0 0 1.0 3.0 2.0 VCE˄V˅ 0 4.0 Figure 3: Typical Transfer characteristics 0 1.0 90 VCE=900V IC=100A VGE=±15V Tj =125°C VCE =20V 70 Eon Eoff (mJ) IC (A) 160 Tj =25°C 80 Tj =125°C 40 0 Eon 50 30 Eoff 10 0 5 6 7 8 9 10 VGE˄V˅ 12 13 11 Figure 5: Switching Energy vs. Collector Current 70 8 24 16 RG˄Ω˅ 40 32 220 VCE=900V RG=4Ω VGE=±15V Tj =125°C 200 160 Eon 50 0 Figure 6: Reverse Biased Safe Operating Area IC (A) 90 Eon Eoff (mJ) 5.0 4.0 Figure 4: Switching Energy vs. Gate Resistor 200 120 3.0 2.0 VCE˄V˅ Eoff 30 120 80 40 RG=4Ω VGE=±15V Tj =125°C 10 0 0 MG17100D-BN4MM 40 80 120 IC˄A˅ 160 0 200 267 3 0 200 600 1000 VCE˄V˅ 1400 1800 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: S  witching Energy vs. Gate Resistor 40 200 160 Erec (mJ) 30 120 IF (A) IF=100A VCE=900V Tj =125°C 20 80 Tj =125°C 10 40 Tj =25°C 0 0 0.5 1.0 2.0 1.5 VF˄V˅ 2.5 0 3.0 10 15 20 Figure 10: Transient Thermal Impedance of Diode and IGBT 1 50 RG=4Ω VCE=900V Tj =125°C Diode ZthJC (K/W) Erec (mJ) 5 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 40 0 30 20 0.1 IGBT 0.01 10 0 0 MG17100D-BN4MM 40 80 120 I F (A) 160 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 200 4 268 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Dimensions-Package D Circuit Diagram M6 8.5 30.0 30.5 2.8x0.5 93.0 6.0 22.0 ž6.5 2 28.0 3 28.0 62.0 15.0 6.0 1 4 5 48.0 16.0 7 6 6.0 18 20.0 108.0 Dimensions in mm Packing Options Part Number Marking Weight Packing Mode M.O.Q MG17100D-BN4MM MG17100D-BN4MM 320g Bulk Pack 30 Part Marking System Part Numbering System MG17100 D - B N4 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE 1 3 2 WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V CIRCUIT TYPE CURRENT RATING PACKAGE TYPE 4 MG17100D-BN4MM 5 LOT NUMBER 6 7 Space reserved for QR code 100: 100A MG17100D-BN4MM 5 269 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15