Transcript
Power Module 1700V 300A IGBT Module
MG17300D-BN4MM
RoHS ®
Features • IGBT3 CHIP(1700V Trench+Field Stop technology)
• D IODE CHIP(1700V EMCON 3 technology)
• L ow turn-off losses, short tail current
• F ree wheeling diodes with fast and soft reverse recovery
• V CE(sat) with positive temperature coefficient Applications • H igh frequency switching application
Agency Approvals AGENCY
• Motion/servo control • UPS systems
• Medical applications
AGENCY FILE NUMBER E71639
Module Characteristics (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max) TJ op
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
-40 -40 AC, t=1min
Max
Unit
150
°C
125
°C
125
°C
3000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
Weight
320
g
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1700
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
400
A
TC=80°C
300
A
tP=1ms
600
A
1450
W
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
It 2
TJ=25°C
1700
V
TC=25°C
400
A
TC=80°C
300
A
tP=1ms
600
A
TJ =125°C, t=10ms, VR=0V
14500
A 2S
Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG17300D-BN4MM
1 283
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 300A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=12.0mA
5.2
Collector - Emitter Saturation Voltage
IC=300A, VGE=15V, TJ=25°C
5.8
6.4
V
2.0
2.45
IC=300A, VGE=15V, TJ=125°C
2.4
V
IGBT VGE(th) VCE(sat) ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Intergrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1700V, VGE=0V, TJ=25°C
1
mA
VCE=1700V, VGE=0V, TJ=125°C
10
mA
400
nA
VCE=0V,VGE=±20V, TJ=125°C VCE=900V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz
VCC=900V IC=300A RG =4.7Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
V
VGE=±15V Inductive Load
-400 2.5
Ω
3.5
μC
27
nF
0.9
nF
TJ =25°C
280
ns
TJ =125°C
380
ns
TJ =25°C
80
ns
TJ =125°C
100
ns
TJ =25°C
800
ns
TJ =125°C
1000
ns
TJ =25°C
120
ns
TJ =125°C
200
ns
TJ =25°C
71
mJ
TJ =125°C
105
mJ
TJ =25°C
64
mJ
TJ =125°C
94
mJ
1200
A
tpsc≤10μS , VGE=15V; TJ=125°C,VCC=1000V
Junction-to-Case Thermal Resistance (Per IGBT)
0.085
K/W
Diode VF
Forward Voltage
IF=300A , VGE=0V, TJ =25°C
1.8
IF=300A , VGE=0V, TJ =125°C
1.9
2.2
V
V A
IRRM
Max. Reverse Recovery Current
IF=300A , VR=900V
380
Qrr
Reverse Recovery Charge
diF/dt=-3600A/μs
130
μC
Erec
Reverse Recovery Energy
TJ=125°C
75
mJ
RthJCD
MG17300D-BN4MM
Junction-to-Case Thermal Resistance (Per Diode)
2 284
0.13
K/W
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 300A IGBT Module Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
600
100 VGE =15V
500
80
400
Tj =25°C IC (A)
IC (A)
VGE =20V VGE =15V VGE =12V VGE =10V VGE = 9V VGE = 8V
300
Tj =125°C
40
Tj =125°C
200
60
20
100 0 0
1.0
3.0
2.0 VCE˄V˅
0
4.0
Figure 3: Typical Transfer characteristics
1.0
600
450
400
Eon
Eon Eoff (mJ)
Tj =25°C
300
300 Tj =125°C
200
150
100 0
Eoff
5
6
7
8
9 10 VGE˄V˅
0
12 13
11
Figure 5: Switching Energy vs. Collector Current
300
50
40
500 400
Eon
150
Eoff
300
100
200
50
100 100
20 30 RG˄Ω˅
600
200
0 0
10
700
VCE=900V RG=4.7Ω VGE=±15V Tj =125°C
Eon Eoff (mJ)
250
0
Figure 6: Reverse Biased Safe Operating Area
IC (A)
350
MG17300D-BN4MM
5.0
4.0
VCE=900V IC=300A VGE=±15V Tj =125°C
VCE =20V
500
3.0 2.0 VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
600
IC (A)
0
200
300 400 IC˄A˅
500
0
600
285 3
RG=4.7Ω VGE=±15V Tj =125°C
0 200
600 1000 VCE˄V˅
1400
1800
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 300A IGBT Module Figure 7: Diode Forward Characteristics
Figure 8: S witching Energy vs. Gate Resistor
600
100
500
80
Erec (mJ)
IF (A)
400 300
Tj =125°C
20
100
Tj =25°C 0
1.0
VF˄V˅
0
3.0
2.0
100
10
20
30 RG˄Ω˅
40
50
1
RG=4.7Ω VCE=900V Tj =125°C
Diode
ZthJC (K/W)
80
0
Figure 10: Transient Thermal Impedance of Diode and IGBT
Figure 9: Switching Energy vs. Forward Current
Erec (mJ)
60 40
200
0
IF=300A VCE=900V Tj =125°C
60
40
0.1 IGBT 0.01
20 0 0
MG17300D-BN4MM
100
200
300 400 IF (A)
500
0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds)
600
4
286
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 300A IGBT Module Dimensions-Package D
Circuit Diagram M6
8.5
30.0 30.5
2.8x0.5
93.0 6.0
22.0
6.5
2 28.0
3 28.0
62.0
15.0 6.0
1
4 5
48.0 16.0
7 6
6.0
18
20.0
108.0 Dimensions in mm
Packing Options Part Number
Marking
Weight
Packing Mode
M.O.Q
MG17300D-BN4MM
MG17300D-BN4MM
320g
Bulk Pack
30
Part Marking System
Part Numbering System
MG17300 D - B N4 MM PRODUCT TYPE M: Power Module
ASSEMBLY SITE
1 3
2
WAFER TYPE
MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V
CIRCUIT TYPE
CURRENT RATING
PACKAGE TYPE
4
MG17300D-BN4MM
5
LOT NUMBER
6
7
Space reserved for QR code
300: 300A
MG17300D-BN4MM
5 287
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
