Transcript
Power Module 1700V 50A IGBT Module
MG1750S-BN4MM
RoHS ®
Features • IGBT3 CHIP(1700V Trench+Field Stop technology)
• D IODE CHIP(1700V EMCON 3 technology) • F ree wheeling diodes with fast and soft reverse recovery
• L ow turn-off losses, short tail current • V CE(sat) with positive temperature coefficient
Applications Agency Approvals AGENCY
• H igh frequency switching application AGENCY FILE NUMBER
• Motion/servo control • UPS systems
• Medical applications
E71639
Module Characteristics (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
AC, t=1min
4000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
Torque
Module Electrodes
Recommended (M5)
2.5
Weight
5
N·m
5
N·m
160
g
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1700
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TC=25°C
±20
V
75
A
TC=80°C
50
A
tP=1ms
100
A
320
W
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TJ=25°C
1700
V
TC=25°C
75
A
TC=80°C
50
A
tP=1ms
100
A
TJ =125°C, t=10ms, VR=0V
420
A 2S
Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1750S-BN4MM
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©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 50A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
5.2
Max
Unit
V
IGBT VGE(th)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
5.8
6.4
VCE(sat)
Collector - Emitter Saturation Voltage
IC=50A, VGE=15V, TJ=25°C
2.0
2.45
IC=50A, VGE=15V, TJ=125°C
2.4
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Intergrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=1700V, VGE=0V, TJ=25°C
3
mA
VCE=1700V, VGE=0V, TJ=125°C
20
mA
400
nA
VCE=0V,VGE=±20V, TJ=125°C VCE=900V, IC=50A , VGE=±15V VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCC=900V IC=50A RG =8Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
V V
VGE=±15V Inductive Load
-400 9.5
Ω
0.6
μC
4.5
nF
0.15
nF
TJ =25°C
370
ns
TJ =125°C
400
ns
TJ =25°C
40
ns
TJ =125°C
50
ns
TJ =25°C
650
ns
TJ =125°C
800
ns
TJ =25°C
180
ns
TJ =125°C
300
ns
TJ =25°C
11
mJ
TJ =125°C
16
mJ
TJ =25°C
10.5
mJ
TJ =125°C
15.5
mJ
tpsc≤10μS , VGE=15V; TJ=125°C,VCC=1000V
200
Junction-to-Case Thermal Resistance (Per IGBT)
A 0.38
K/W
2.2
V
Diode VF
Forward Voltage
IF=50A , VGE=0V, TJ =25°C
1.8
IF=50A , VGE=0V, TJ =125°C
1.9
V
84
A
IRRM
Max. Reverse Recovery Current
IF=50A , VR=900V
Qrr
Reverse Recovery Charge
diF/dt=-1200A/μs
25
μC
Erec
Reverse Recovery Energy
TJ=125°C
13.5
mJ
RthJCD
MG1750S-BN4MM
Junction-to-Case Thermal Resistance (Per Diode)
2 290
0.55
K/W
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 50A IGBT Module Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
100
100 VGE =20V VGE =15V VGE =12V VGE =10V VGE = 9V VGE = 8V
VGE =15V
80
Tj =25°C
60
IC (A)
IC (A)
80
40
60
Tj =125°C
40
Tj =125°C
20
20 0 0
1.0
3.0
2.0 VCE˄V˅
0
4.0
Figure 3: Typical Transfer characteristics
0
1.0
45
VCE=900V IC=50A VGE=±15V Tj =125°C
VCE =20V
35 Tj =25°C
Eon Eoff (mJ)
IC (A)
80
40
Tj =125°C
20 0
5
6
7
8
9 10 VGE˄V˅
11
25
15
0
12 13
Eoff
35
80
64
80 Eon
Eoff
60 40 20
5 20
48 32 RG˄Ω˅
100
15
0 0
16
110
VCE=900V RG=8Ω VGE=±15V Tj =125°C
25
0
Figure 6: Reverse Biased Safe Operating Area
IC (A)
45
Eon Eoff (mJ)
Eon
5
Figure 5: Switching Energy vs. Collector Current
MG1750S-BN4MM
5.0
4.0
Figure 4: Switching Energy vs. Gate Resistor
100
60
3.0 2.0 VCE˄V˅
40 60 IC˄A˅
80
0
100
3 291
RG=8Ω VGE=±15V Tj =125°C
0 200
600 1000 VCE˄V˅
1400
1800
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 50A IGBT Module Figure 7: Diode Forward Characteristics
Figure 8: S witching Energy vs. Gate Resistor 20
100 80 Erec (mJ)
15
60
IF (A)
IF=50A VCE=900V Tj =125°C
10
40 Tj =125°C
5
20 Tj =25°C 0
0
1.0
0.5
2.0 1.5 VF˄V˅
0
2.5
3.0
20
30
40
Figure 10: Transient Thermal Impedance of Diode and IGBT
25
1 RG=8Ω VCE=900V Tj =125°C
Diode
ZthJC (K/W)
Erec (mJ)
10
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
20
0
15 10
0.1
IGBT
0.01
5 0 0
20
40
60
80
0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds)
100
IF (A)
MG1750S-BN4MM
4 292
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
Power Module 1700V 50A IGBT Module Dimensions-Package S
Circuit Diagram
Packing Options Part Number
Marking
Weight
Packing Mode
M.O.Q
MG1750S-BN4MM
MG1750S-BN4MM
160g
Bulk Pack
50
Part Marking System
Part Numbering System
MG17 50 S - B N4 MM PRODUCT TYPE M: Power Module
ASSEMBLY SITE
MG1750S-BN4MM
WAFER TYPE
MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V
CIRCUIT TYPE
CURRENT RATING
PACKAGE TYPE
LOT NUMBER
Space reserved for QR code
50: 50A
MG1750S-BN4MM
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©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15
