Transcript
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Micrrosem mi Corp poration MSM048 M 8 and MS SM096 MSD048 M 8 and MS SD096 (Shortened data sheet vversion)
Secure SLC NAND S SATA BG GA with Hardwar H re Authe enticatio on, Self--Destruc ct and A AT Integrrity NOTE: Miccrosemi does not publish h the full datta sheet for tthis product on the web.. Con ntact your M Microsemi salles representtative to recceive the full data sheet.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
1
© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Sec cure SL LC NAN ND Fla ash SAT TA BGA General Description D n The Microse emi MSM048//MSM096 is a complete SA ATA storage system packa aged as a sin ngle 32 mm x 28 mm, 524 pin PBG GA. Perfect for f single board computer boot b devices and embedded defense a applications w where a full sized 2.5 5” SSD is too large, the Miicrosemi SAT TA BGA comb bines a SATA A flash controller with the la atest in small geometry SLC NAN ND flash, mulltiple power supplies, and ssecurity featu ures including g encryption, a authentiG, anti-tamperr (AT), as welll as self-destruct features into a single device. The MSM048/MS SM096 cation, RNG SATA BGA is available with w host acce essible densitties of 37.5 G B and 75 GB B2, is complian nt to SATA revvision pports interfac ce transfer sp peeds of 1.5 Gb/s G and 3.0 Gb/s. 2.6, and sup
Applica ations
Standard Features
Note 1:
1
Host acces ssible capacity: 37.5 GB MSM048, M 75GB MSM096 Single B Board Compu uter Boot dev vice Integrated switching pow wer supplies. Ruggediized mobile d defense systtems 48 GB and 96 GB devic ces have same form-factor//pin-out.1 Battlefie eld robotics Single supply operation: 3.3 to 5.0 V. V Data rec corders and d digital maps Minimal ex xternal compo onents. Industria al automatio on Zero power standby mo ode (ZPM). Transpo ortation syste ems 256-bit RNG (Random number n generrator). Mobile s secure medic cal products Hardware AES-128 A enc cryption runnin ng CTR mode e. Additional features f of the DX model o Hardw ware authentication. o AT Inttegrity physic cal tamper pro otection. o Temp perature rate of o change, Hi/Low AT mitig gation. o Self-d destruct capab bility. o Multip ple automatic destruct optio ons SHA-256 pass-phrase p feature. f AES key purge feature eliminates e encryption key. Whole device erase with h “push-button” trigger optiion. Support forr Crypto Erase and Flash Erase. E 1-bit, Single Level Cell (SLC) ( NAND flash. 16, 9-bit sy ymbol ECC co orrection capa ability. Uncorrecta able bit error rate r (UBER): 10-17 Sequential R/W 128 KiB B performance e MSM048: 156/44 MB/s. Sequential R/W 128 KiB B performance e MSM096: 179/83 MB/s. Sequential R/W IOPS MSM048: M 8693 3/10421(4K). Sequential R/W IOPS MSM096: M 1023 31/18230(4K)). Random R/W R IOPS MSM048: 5028/2 2432(4K). Random R/W R IOPS MSM096: 5884/4 4084(4K). “Silent erro or” protection with 32-bit per sector CRC C. 2.25 PB wrrite endurance e (MSM096). Over and under u voltage detection and protection. Field upgra adable firmwa are using SAT TA interface. 100% dyna amic burn-in. e size Product image is apprroximately life Write prote ect option for read-only app plications. Includes high quality DC C blocking cap pacitors on th he SATA sign als. Operationa al temperature e range of -40 0 ºC to +85 ºC C. Storage Te emperature: -5 55 ºC to +125 5 ºC. Also availa able in 2.5” forrm-factor (MS SD model, se ee Figure 4b) Evaluation board is available for benc ch testing. One Gigabyte (GB B) = 1,000,000,000 by ytes.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Figure 1 sho ows the connections neces ssary to use the t MSM048//MSM096 in a typical appliication. External components s are minimal with only a fe ew capacitors s needed to ssupply energyy for an orderlly shutdown d during unexpected power disturrbance events s. If an extern nal backup 5. 0 V supply, sseparate from m Vdd, is available, citor array can n be omitted. the backup supply capac If the applic cation requires s an external trigger for Fla ash Erase, Crrypto Erase, o or self-destruct operations, connect a switch or logic c gate to the Erase_Trigger E r and/or Self- Destruct inpu uts as shown. The inputs h have bounce circuiitry so there is s no need to debounce d sw witch signals e externally. Fo or read-only a appliinternal de-b cations or applications a th hat intermitten ntly operate in n a read-only mode, drive o or tie the Writte_Protect_N pin low when write w protection n is needed. Note that the e write protectt input is sam mpled once at power-on tim me. An optional RS S-232 port allo ows a host controller to mo onitor the statu us of the device and enable or disable vvarious operatin ng modes. A feature called AT Integrity y supports a m multitude of p possible Anti-T Tamper features. Ho st Chipset Sata a Interface 3.3 to 5 V
System logic
MSM048 orr MSM096
Sata_T x_P
2.85V
Sata_T x_N
Write_Protect_n is sampled once at power on.
Sata_Rx_ N
Vdd
NC
Sata_Rx_P
Leave open
1 1.5/3.0 Gb/s
Module_Activve, and Status_0 to Status_2 S have 22K pulll down resistors
22 2K
Write_Protect_N 3V
System logic
ZPM
Authentication
Auth
3K 3V
Module_Active Status_0 Status_1 Status_2
SATA Interface
33K K
3.0V
Flash Management M Logic
8K 1K
Module Status
3V
Stand-Alo one Crypto o
3K
System logicc Crypto_Std
3 3V
RS-232 port (optional)
22K
Rx_Port
RS-232 Po ort (optional))
Tx_Port 200
Erase_Trigger
3V
ECC
ECC
AES 128
AES 128
Activity_N
3K
> 2 0 ms = Era se 33K
24-b it
2 24-bit
SLC NAND Flash (Encrypted)
2.5 to 5.0 V
DAS LED D (if require d)
SLC D NAND Flash h (Encryptted)
RN NG Cryp pto
(3.0 V)
200
Act_Led_Pwr Ps_Pwr
See No ote 5
1.0V 2.85V
Powe r Suppl y Logicc
Vdd
150 uF minim mum 22 uF
Backup_Pwr (5.0 V)
Backup_Charger
3 3V
Self_Destruct > 20 ms = D estru uct
3K
Extternal bacckup supply or 300 00 uF
Capacitor charge current is inte ernally limited to less than t 100 0mA. Use of an extern nal serries resistor can furtherr reduce inru ush current but is not re equired.
Self-Desttruct 33K (Internally triggered self-destruct)
Wh hen supplying Backup_ _Pwr extternally, leave the Backup_Charger pin open n.
3V 22K
AA12
ATI_0
AT Integrity Logic
AT_Out
T10 0
Vss
Figu ure 1: Typical applica ation conn nections Notes: 1. MSM048/MSM096 6 devices include in nternal high quality DC blocking capaccitors on the SATA A lines. 2. Self_Destruct and Erase_Trigger functions are combine ed into one pin on M MSD model. 3. External pull-down n resistors on ZPM,, Erase Trigger and d Self-Destruct pinss may be beneficia l in some applicatio ons. 4. To avoid excessive leakage on Auth,, Crypto_Std, and Rx-Port R pins, do no ot exceed maximum m input voltage, refe er to Table 1 and 2 2. 5: WARNING: Micro osemi recommend ds caution when considering c drive e voltage levels for the Erase_Trigger and Destruct in nputs. It is critical to adhere e to published VIL levels to prevent accidental erase o or destruct operattions. Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Electricall Characteristics Table 1: Absolute Maximum M Ratings Paramete er and Condiition Vdd supp ply voltage Voltage with w respect to o Vss: Write_Pro otect_N, ZPM M, Erase_Trigg ger, Self_Des struct Backup_P Pwr and Backup_Chargerr pin Voltage with w respect tto Vss Voltage with w respect to o Vss: Auth, Cry ypto_Std, and d Rx_Port Voltage on o ATI_[0..N] pins. The AT TI chain has a single 22K in nternal pull-up resistor to 3.0 V. V Refer to Figure 6 for co onnection deta ails. nnected to gro ound or driven low with an n open Typically this pin is con drain driver. Maximum m input/output current: Write_Pro otect, ZPM, Rx_Port, R Erase e_Trigger, Se elf_Destruct, Tx_Port, Status_0, S Sta atus_1, Status s_2, Module_ _Active Auth, Cry ypto_Std, ATI_ _[0..N], ATO_ _[0..N], and AT_Out A Maximum m source/sink current: Act_Led_ _Pwr Maximum m source/sink current: Activity_N Maximum m source curre ent: Backup_C Charger (Inte ernally limited) Operating g temperature e Operating g temperature e rate of change Warning: If the temperature-rate-off-change featu ure is enabled d, g the program mmed temperature-rate-of--change limit may exceeding initiate an n automatic se elf-destruct op peration. Thermal shutdown s pro otection opera ating range Storage te emperature
M Min -0 0.3
Max x 5.75 5
Un nit V
-0 0.3
Vdd + 0.3
V
-0 0.3
5.75 5
V
-0 0.3
3.5 5
V
-0 0.3
3.3 3
V
±2 2
m mA
Source e 15 Sinkk 0 Sourcce 2 Sinkk 5 -4 40
-5 55 -5 55
m mA m mA
70 0
m mA
+85 5
°C C
10 0
°C/m minute
+10 00 +12 25
°C C °C C
Stresses greater than th hose listed un nder “Absolute e Maximum R Ratings” may cause perma anent damage e to the his is a stress rating only and functional operation of the device att these or anyy other conditiions device. Th greater tha an those indic cated in the op perational sec ctions of this sspecification is not implied d. Exposure tto absolute maxim mum rating con nditions for ex xtended perio ods may affecct reliability off the product.
Table 2: Recommen R nded and Typical T DC C Operation nal Charac cteristics Parameterr Vdd supply y voltage (see e part numbering guide forr supply optio ns) Backup_Pw wr voltage (if not n connected d to Backup_ _Charger) 2 VIL (Input lo ow voltage) Write_Prote ect_N, ZPM, Rx_Port, Erase_Trigger, Self_Destruct, S , ATI_[0..N] , and Auth VIH (Input high h voltage) 2 Write_Prote ect_N, ZPM, Erase_Trigge er, Self_Desttruct VIH (Input high h voltage) Rx_Port, Auth, ATI_[0..N]] pins VOH (Outpu ut high voltage e, 1.5 mA load d) Module_Ac ctive, Status_0 0, Status_1, Status_2, S Tx_ _Port, AT_Ou ut VOH (Outpu ut high voltage e, 10 uA load) Activity_N VOH (Outpu ut high voltage e, no load) Act_Led_Pwr A IOUT Act_Le ed_Pwr curren nt (with 1.5v LED L drop) VOH Backup p_Charger vo oltage (no load d)
M Min1 3 3.14 4 4.95
Typ1 3.3 5.0
Max1 5.5 5.5
Un nit V V
0.0
0.3
V
2.4
Vdd
V
2.4
3.3
V
2.5
2.75
3.1
V
2 2.80 2.9 4 4.7
2.85 3.0 7 5.0
2.95 3.1 8 5.2
V V m mA V
Note 1: Unless otherwise stated d, all values were e measured at 25 5 °C Note 2: WARNIN NG. Microsemi recommends caution c when co onsidering drive e voltage levels s for the Erase_T Trigger and Des struct inputs. It is critical to adhere to published VIL levels to t prevent accid dental erase or destruct operattions. Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 2: Recommen R nded and Typical T DC C Operating g Characte eristics (Co ontinued) Paramete er Iout Backu up_Charger (Internally lim mited) VOH and VOL of ATO_[0 0..N] VOL (Outp put low voltage with load off 1.5 mA) Module_A Active, Status s_0, Status_1, Status_2, Tx x_Port, Activi ty_N, AT_Out IIH (Input High Currentt. Inputs tied to 3.3 V) otect_N, ZPM M, Erase_Trigg ger, Self_Des struct, ATI_[0...N] Write_Pro IIH (Input High Currentt. Inputs tied to 3.5 V) Crypto_Std, Auth and Rx_Port IIH (Input High Currentt. Inputs tied to Vdd = 5.5 V) otect_N, ZPM M, Erase_Trigg ger, Self_Des struct, ATI_[0...N] Write_Pro IIL (Input low Current. Inputs tied 0.0 V) otect_N, ZPM M, Rx_Port, Errase_Trigger, Self-Destrucct, Write_Pro Auth, Cry ypto_Std, ATII_0 Idd. Inacttive with no SATA S commands, ( Vdd = 3.3 3 V) MSM048 MSM096 Idd. 100 % Writes (128 KiB Seq. block), ( Vdd = 3.3 V ) MSM048 MSM096 Idd. 100 % Reads (12 28 KiB Seq. bllock), ( Vdd = 3.3 V ) MSM048 MSM096 Idd. Inacttive with no SATA S commands, ( Vdd = 5.0 5 V) MSM048 MSM096 Idd. 100 % Writes (128 KiB Seq. block), ( Vdd = 5.0 V ) MSM048 MSM096 Idd. 100 % Reads (12 28 KiB Seq. bllock), ( Vdd = 5.0 V ) MSM048 MSM096 Idd during g standby and d sleep (MSM M048 and MSM M096, 3.3/5.0 0 V) Idd. Desttruct operation (20 mS) Vd dd = 3.3 V or 5.0 V (from inactive) Idd. ZPM, deep slumbe er mode (ZPM M = Vdd = 3.3 3 V) Other inp puts at 0V Required external back kup power ca apacitance. Minimum required exte ernal capacito or on PS_PW WR R = Vdd - .025 5v. PS_PWR Required external cera amic capacito or for 1.0 V intternal supply. Required external cera amic capacito or for 2.85 V in nternal supplyy. Suggeste ed series charrging resistance for BACKU UP_CHARGE ER supply (No resisttor required) ------------------------------------------------------------------Note 1: Un nless otherwis se stated, all values were measured at 25 °C.
Min1
Typ p1 Max1 Unit 65 5 mA Typically ATII_0 level ± 0..1 V 0.0
.25 5
0.3
V
300
uA
200
uA
850
uA
200
uA
75 0.17 0.19 90
0.203 0.218
A
50 0.25 0.27 75
0.283 0.313
A
10 0.21 0.23 35
0.243 0.268
A
35 0.13 0.14 45
0.155 0.165
A
85 0.18 0.20 00
0.205 0.235
A
50 0.15 0.16 65 120/95 0.25 50 5
0.170 0.190
3000
mA A mA uF
150
uF
22 22
uF uF 0
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
5
A
© 20144 Microsemi Corporatio on. All rights reserved d
10
Ohms
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096 400 us
5v Inputt supply ng Chargin input capacittor (~0.3A for f 200us)
Interna al regulators power up. ( ~0.6A for 5ms) Flash co ontroller startup. ( ~0.35A for 1ms)
Flash controller initialiizes flash
Idle state 5v Input current
Figurre 2: Powe er-On Inrus sh Currentt Plot
Thermal Performan P nce The MS SM048/MSM0 096 incorporates features to t transfer hea at into the atttached host P PCB using mu ultiple thermal vias position ned around he eat generating g devices. M icrosemi cond ducts a therm mal and power asent of each ne ew version of the MSM048/MSM096. T The thermal im mage in Figurre 3 show the temperasessme ture pro ofiles of the MSM048/MSM M M096 on the cu ustomer evalu uation PCB a at room tempe erature.
Figure 3a
Fig gure 3b
Figure 3c
Figure 3a a: Idle. Roo om temperature 26 °C C, Highest module te emperature e is 36 °C. Figure 3b b: Write. Room R temp perature 26 6 °C, Highe est module e temperatu ure is 39 °C C. Figure 3b b: Zero pow wer mode. Module ru uns in ZPM M near Roo om temperrature 26 °C C. ( MSM048 is installed d on a MSM M048BM2L-M M00IEV eva aluation bo oard ) Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 3:: Module Pin list (ssame pin-o out for 48 G GB and 96 GB units) Pin G19, G20 0, G21, G22, G23, H19, H20, H22, H23, J19, J20, J21, J22, J23 A2, A23, A24, A A25, A3, AA1, A AA2, AA23, AA24, AA25, AA A3, B1, B2, B24, B25, B C1, C10, C13, C16, C18, C25, C8, D10, D11, D12, D13, D14, D15, D16, D18, D22, D4, D8, 2, E4, E18, E22 E8, F18, F19, F F20, F21, F22, F F23, F3, F4, F5, F6, F7 7, F8, G10, G11, G G12, G13 3, G14, G15, G16 6, G17, G18, G8, G9, H10, H11, H12, H13, H14, H15, H16, H17, H18, H21, H5, H8, J H9, J10, J11, J12, J13, J14, J15, J16, J17, J18, J8, J9, K10, K11,, K12, K13, K14,, K15, K16, K17,, K18, K19, K20,, K21, K22, K23,, K3, K4, K5, K6 6, K7, K8, K9 9, L10, L11, L12, L13, L14, L15, L16, L17, L18, L8, L9, M10, 2, M13, M11, M12 M14, M15 5, M16, M17, M18 8, M19, M20, M21, M22, M23, M3, M4, M M5, M6, M7, M8, M9, N10, N N11, N12, N13, N14, N15, N16, N17, N18, N8, P N9, P10, P11,
Pin na ame
Typ pe
Description n
Vdd
Pow wer
Supply voltage pins.
Vss
Pow wer
Ground d pins.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
P12, P13,, P14, P15, P16,, P17, P18, P21,, P5, P8, P9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R8, T R9, T13, T18, T19, T20, T21, T22, T23, T3, 6, T4, T5, T6 T7, T8, U11, U15, U18, U22, V U4, U8, V11, V15, V18,, V22, V4, V8, W1, W W11, W15 5, W18, W25, W8,, Y1, Y13, Y2, Y24, Y Y25
Vss
MSM048/ M /MSM096 and MSD048/M MSD096
Pow wer
C15 C14 C11 C12
Sata_Rx_ _P Sata_Rx_ _N Sata_Tx_ _P Sata_Tx_ _N
In n In n Ou ut Ou ut
W10
Write_Protect_N
In n
U17
ZPM
In n
E17 V17
Auth Rx_Port
In/o out In n
Ground d pins.
SATA R Rx+ 1.5/3.0 Gb/s differen ntial AC coupled SATA R Rx- 1.5/3.0 Gb/s differen ntial AC coupled SATA T Tx+ 1.5/3.0 Gb/s differen ntial AC coupled SATA T Tx- 1.5/3.0 Gb/s differen ntial AC coupled Places the module in nto a read-on nly mode of op peration. 0 = Writte protected, 1 = Normal o operation. Note: T This input is sa ampled once at power on ttime. Change es to the state e of this pin w when power iss applied are igno ored until the next power ccycle. Zero Power M Mode) enabless a low powerr ZPM (Z standbyy mode. Drivving the ZPM pin to a high level causes the MSM048 8/MSM096 to enter an ultra a-low power d deep slumberr mode. Lowe est power ope eration is obtain ned with Vdd at 3.3 V. Du uring normal operation, th his pin must be held at a low level. Hardwa are authentica ation. Optiona al 19200 baud d RS-232 porrt. Port receivve input.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096 Active during Z ZPM ) Crypto//Flash Erase ttrigger pin. (A 0 = Norrmal operation n. 1 = Trig gger a crypto or flash erase e after a 20 m ms debou unce. The Era ase_Trigger m must be enab bled using the HWET R RS-232 command.
D17
Erase_Trrigger
Driving this pin high for 20 ms or longer causes the MSM04 48/MSM096 to o begin a Cryypto or Flash Erase operatio on. To trigge er a Crypto or Flash Erase operation imm mediately afte er power on, d drive the pin llow for longer tthan 20 ms, a and then drive e it high for 20 0 ms or longer. This pin hass an internal p pull-down. No o external pull down resisto or is necessarry.
In n
Note: This pin n has an enab ble to preventt an accidenta al erase operatio on. The host can use the HWET RS-23 32 comma and to enable or disable thiis pin. Refer to the part num mber guide to o determine th he default sta ate of the ena able. Warning: Microsemi recomm mends caution whe en considering drive e voltage levels for t he Erase_Trigger input. Adhere to p published VIL levels to prevent accidental secure erase operrations.
Module e self-destructt. (Active durring ZPM mod de) 0 = Norrmal operation n. 1 = Trig gger a self-de estruct operatiion after a 20 0 ms debou unce. The Se elf_Destruct p pin must be en nabled usin ng the HWSD D RS-232 com mmand.
Self_Des struct
U10
If this p in is high at p power on, no self-destruct operation willl begin. To trrigger a self-destruct opera ation immedi ately after po ower on, drive e the pin low ffor longer than 20 ms, and then drive it high for 20 mss or longer. This pin n has an interrnal pull-down n. No externa al pull down re esistor is nece essary.
In n
Note: This pin n has an enab ble to preventt an accidenta al destruct o operation. Th e host can usse the HWSD D RS-232 comma and to enable or disable thiis pin. Refer to the part num mber guide to o determine th he default sta ate of the ena able. Warning: Microsemi recommends cauttion when considering drive voltage le evels for the Destruct in nput. Adhere to pu blished VIL levels to o prevent an accid dental destruct op peration. The destru uct operation produ uces no heat, sparkks, or form factor ch hanges. The processs is not reversible e and is persistent a across power cycle es. After a destruct op peration, the Modu le_Active signal is high and Status_0, Status_1, destruct operation completed. and Statuss_2 indicate that a d
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
AA12, Y11, AA10, Y9, AA8, Y7, Y AA6, Y5, AA4, Y3, Y W2, V2, U2, T1, R2, P1, N2, M1, M L2, K2, J1, H2 2, G1, F2, E1, D2 2, C2, B3, A4, B5 5, A6, B7, A8, B9 9, A10, B11, A12, B13, A14, B15, A16, B17, A18, B19, A20, B21, A22, C23, D23, D25, E24, F25, G24,, H25, J24, K25, M24, N25, P24, R25, T24, U25, V23, V25, W23 3, Y22, AA21, Y20, AA19 9, Y18, AA17 7, Y16, AA15 5, Y14, AA13 3 Y12, AA11, Y10, AA9, Y8, AA7, Y6, Y AA5, Y4, W3, V1, V V3, U1, T2, R1, P2, N1, M2, K1, K J2, H1, G2, F1, E2, D1, D3, C3, C B4, A5, B6, A7 7, B8, A9, B10, A11, A B12, A13, B14, A15, B16, A17, B18, A19, B20, A21, B22, B23, C24, D24, E25,, F24, G25, H24, J25, K24, L24, M25, N24, P25, R24, T25, U24, V24, W24, Y23, AA22 2, Y21, AA20 0, Y19, AA18 8, Y17, AA16 6, Y15, AA14 4 T10
T12, T14
Contactt factory
Contactt factory
Backup_Charg ger
Contactt factory al backup cap pacitor array ccharging volta age. Externa Backup p-Charger is a boosted 5 V regulated ou utput for chargin ng a small arra ay of external capacitors cconnected to th he Backup_Pw wr pins. If inp put surge currrent is a concern n, add an optiional external resistor in se eries with thiss pin and the Backup_Pwrr pin to limit th he Backup p_Pwr charge e current. Whe en supplying tthe Backup p_Pwr from an n external sup pply, leave these pins open.
Ou ut
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096 p power supplly input. Backup These p pins provide a source of 5 V power for tthe entire mod dule during po ower-off even nts. Connect these pins to an external ccapacitor arrayy or external 5 V power ssupply. The M MSM048/MSM M096 can cha arge the externa al capacitor arrray if the Bacckup_Charger pin conneccts to the Backkup_Charger capacitor arrray. ply for driving an activity led d. Currentt limited supp an internal ge This is a enerated supp ply which hass a 200 ohm se eries resistor. No external series resisto or is required. e activity signa al. See Figurre 1 for conne ections Module to drive e an external L LED. 0 = Module active, 1 = Mod dule inactive. Optiona al 19200 baud d RS-232 porrt. Port Tra ansmit outputt. Most sig gnificant bit o of the module status. Refer to o Table 4 for status codes.. Middle bit of the mod dule status. Refer to o Table 4 for status codes.. Least s ignificant bit o of the module e status. Refer to o Table 4 for status codes.. es the module e master statu us. Indicate 1 = The e module is acctive. 0 = Mo odule is un-po owered or Vdd d is below Vd dd min.
U12, U13, U14, V12, V13,, V14, W12, W13 3, W14
Backup_Pwr
In n
W9
Act_Led_ _Pwr
Ou ut
C9
Activity_N N
Ou ut
W17
Tx_Port
Ou ut
W16
Status_2
Ou ut
V16
Status_1
Ou ut
U16
Status_0
Ou ut
D9
Module_A Active
Ou ut
NC
DNC
N3, N4, N5, N N6, N7, P3, P P4, P6, P7 7, R3, R4, R5, R R6, R7 U5, U6, U7, U V5, V6, V7 7, W5, W6, W7 W G3, G4, G5, G G6, G7, H3, H H4, H6, H7, H J3, J4, J5, J6, J7 C5, C6, C7, C D5, D6, D7, D E5, E6, E7 7 U19, U20, U21, V19, V20,, V21, W19, W20 0, W21
Reserv ved for future e use or facto ory test. Leave tthese pins floating. Do n not connect.
2.85V
Pow wer
This intternal supply requires 22 u uf of external ccapacitance. N Not intended to power exte ernal devices.
1.0V
Pow wer
This intternal supply requires 22 u uf of external ccapacitance. Not intended to power extternal devicess.
NC
Ps_Pwr
DNC
Pow wer
Reserv ved for future e use or facto ory test. Leave tthese pins floating. Do n not connect. an isolated ve ersion of the V Vdd input sup pply. An This is a externa al capacitance e of 470 uF iss required for the MSM04 48BM2L-500I (5 volt) devicce. The MSM04 48BM2L-M00I (3.3 volt) de evice requiress a single 150 0 uF ceramic ccapacitor. Th his supply is n not intended to power exte ernal devicess.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
C4, C19, C20, C21, C22, D19, D20, D21, E3, E12, E15, E E19, E20, E21,, E23, F9, F10, F11, F12, F13, F14, F15, F17, L6, L7, L19, L20, L L21, L22, L23, T11, T15, T16, U3, U23, U V9, W22, W4,, N19, N20, N21, N22, N23, P19,, P20, P22, P23, R19,, R20, R21, R22, R23, E14, F16, E9, T9, E16, L4, C17, C E11, L5, E13, U9, U V10, E10, T17, L3, L1
NC
DNC C
Reserv ved for future e use or facto ory test. Leave tthese pins floating. Do n not connect.
L25
Crypto_S Std
I/O
Contactt factory
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 4: Status S cod des on sign nals: Modu ule_Active,, Status_0,, Status_1 and Status s_2 Module_Ac ctive
1
2
1
Status_ _2
1
1
Status_1
Status_0
1
Status code descripttion
Module is u unpowered orr Vdd is below w minimum re equired 0 0 0 0 voltage. Module is w waiting for one e or more inte ernal voltagess, external 0 0 0 1 backup sup pply, or the temperature to move into accceptable ranges. Reserved fo or future use. 0 0 1 0 Reserved fo or future use. 0 0 1 1 Reserved fo or future use. 0 1 0 0 Reserved fo or future use. 0 1 0 1 Reserved fo or future use. 0 1 1 0 0 1 1 1 Module in d deep sleep ZP PM mode. (Z Zero Power M Mode)2 1 0 0 0 Normal ope eration. 1 0 0 1 Authenticattion failed. 1 0 1 0 Reserved fo or future use. 1 0 1 1 Contact facctory for details 1 1 0 0 Contact facctory for details 1 1 0 1 Contact facctory for details 1 1 1 0 Contact facctory for details 1 1 1 1 Contact facctory for details The polarity of these signals s can be e inverted using an RS-232 2 command. nes have wea ak internal pull-down resisttors. Status lin The RS-2 232 status co ommand can provide additional status in nformation an nd may be beneficial when n multiple status ev vents occur co oncurrently. Do not use the AT inte egrity self-des struct mode during d ZPM (zzero power m mode) because e AT integrityy events PM to save po ower. are ignorred during ZP
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
M al and Therrmal Prope erties Table 5: Mechanica Parameter Form Facttor Pin array Thickness s (including BG GA balls) Length Width Weight (M MSM model) Weight (M MSD model) θJC Therm mal conduction n to case θJB Therm mal conduction n to PCB
Va alue PBGA 524 6.1 max x 32 ± 0.2 25 28 ± 0.2 25 12 158 27 (est)) 18.6 (es st)
Units p pins m mm m mm m mm g grams g grams ° C/W ° C/W
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096 .
TOP VIEW W
524x
A9
A1 Corner
A1
BOTTOM VIEW V
A b 25 24 23 22 21 20 19 18 17 16 15 14 13 12 2 11 10 9 8 7
6 5 4 3 2 1
MILLIM METERS A B C D E F G H J K L M N
E1
E
.
P R T
E2
e
U V W Y AA
DIM M
MIN
A A1 A9 b D D1 D2 2 e E E1 E2 S
4.80 5.50 0.40 0.60 0.1 15 0.50 0.70 31.75 32.25 24.00 BSC 4.00 B BSC 1.00 B BSC 27.75 28.25 20.00 0 BSC 4.00 BSC 22.95 24.00
e
D2
D1
D .
Figure 4a: MSM048/MSM096 Dimension D ns for Modu ule Form-F Factor (48 GB and 96 GB form-facto f or and pin-o out are ide entical) Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
MAX
.
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
14.00
Ø 8.00
43.35
Ø 8.00
2 26.50 T CASE
90.60
100.15 MAX (CASE)
90.60
M3 3 THD MIN 3 FULL F THD 4 PLCS P
100.45 MAX (CASE / CONNECTOR)
Ø 8.00
72.00
Ø 8.00
14 00 14.00
9.50 ± 0.50 INCLUDES LABEL S THICKNESS
Ø 8.00
Ø 8.00
M3 THD MIN 2.5 FULL THD T 4 PLCS 3.00
4.07
61.72
13.43
33 3.39
(4.00)
3.50 ± 0.38 1.50 MIN
6 69.85±0.25
(0.30)
(37 7.20 ) (42 2.73 )
9.40
9.40
4.80
Figure 4b: 4 MSD04 48/MSD096 6 dimensio ons for 2.5”” Form-Fac ctor
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
16
(0.50)
1.00 0.40
© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 6: MSD048 and a MSD096 Connec ctor Pin De escriptions s (2.5” Form m-Factor) Pin S1 S2 S3 S4 S5 S6 S7
Name N Ground SATA Rx x_P SATA Rx x_N Ground SATA Tx_ _N SATA Tx_ _P Ground
Descrip ption Power supply ground. Connects to S4 and S7. Positive SATA S differen ntial receive signal from host system. Negative SATA differe ntial receive ssignal from ho ost system. Power supply ground. Connects to S1 and S7. Negative SATA differe ntial transmit signal to hosst system. Positive SATA S differen ntial transmit ssignal to host system. Power supply ground. Connects to S1 and S4.
P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15
Deep Slu umber trigger3 Erase/De estruct trigger3 3 Unused Erase/De estruct return3 3 Ground Ground3 5V 5V 5V Ground DAS/DSS S Ground Secure erase return3 Unused3 Unused3
Pull pin to o 3.3v to ente r from Deep S Slumber mod de. See note 2 2. Erase trigger input. Op ptional destru uct trigger input. See note 1. Unused. Return pa ath for erase/d destruct trigge er on P2. See note 1. Power supply ground. Connects to P6, P10, and d P12. Power supply ground. Connects to P5, P10, and d P12. 3.3 V to 5 V power. Co onnects to P8 8 and P9. 3.3 V to 5 V power. Co onnects to P7 7 and P9. 3.3 V to 5 V power. Co onnects to P7 7 and P8. Power supply ground. Connects to P5, P6, and P12. Device Ac ctivity Signal/D Disable Stagg gered Spin up p. Power supply ground. Connects to P5, P6, and P10. Legacy se ecure erase re return. See note 1. Unused Unused
Notes: o pins P2 and P4 can trigger an erase o or destruct operation. Two o external 1. A pulse applied to erase/destruct trig gger modes exist. e The ope eration of P2 is programma able using a RS-232 comm mand or b set by the factory. can be Mode e 1: Connectt pin P2 to a voltage v capab ble of supplyin ng 5-12 mA a at 3.3v. The M MSD048/MSD D096 has internal current lim miting so the external e volta age can range e from 3.3 to 5 50v with no series resistorr required. nect a switch between pin P4 and groun nd. When the e switch is clo osed, 5-12 mA A runs from th he supply Conn conn nected to pin P2, P out pin P4 4, through the e external sw itch to the extternal voltage e ground (retu urn). Therre is no signifiicant current draw d (<10 uA A) on the exte ernal supply u ntil the switch h is closed. D During closu ure, the switch should be able a to sink 5--12 mA while maintaining lless than 0.5vv at pin P4. Mode e 2: Mode 2 is a legacy errase/destruct mode that usses the 12V p pin (P13) for tthe ground retturn path. To im mplement mode 2 erase/de estruct triggerring, connect pin P2 to a vvoltage capab ble of supplyin ng 5-12 mA at a 3.3v. The MSD048/MSD M D096 has inte ernal current llimiting so the e external voltage can rang ge from 3.3 to o 50v with no o series resistor required. Connect C a sw witch between n pin P13 and d ground. Wh hen the switc ch is closed, 5-12 5 mA runs s from the sup pply connecte ed to pin P2, o out pin P13, th hrough the exxternal switc ch to the external voltage ground g (return n). There is n no significant current draw (< 10ua) on tthe externa al supply until the switch is s closed. During closure, th he switch sho ould be able tto sink 5-12 m mA while main ntaining less than 0.5v at pin p P13. 2. The MSD048/MSD096 can entter a very low w power Deep p Slumber mo ode by pulling the Deep Slu umber er pin P1 high h for 20 ms. To T exit the De eep Slumber mode, pull piin P1 to groun nd. trigge 3. Stan ndard SATA cable c connectors often have h pins P1 1, P2, P3 shorted togethe er, pins P13, P14,P15 shorrted togetherr and pins P4 4, P5 and P6 6 shorted tog gether. Since e the MSD04 48/MSD096 us ses som me of these piins for erase e, destruct an nd Deep Slum mber feature es, use of con nnectors witth shorted pins p may produce unexpe ected results s. Be sure to o evaluate co onnector cho oices carefullly prior to us sing them in a design.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 7: System S Spec cifications an nd Characterristics Fe eature Security and a AT featurres Random number n gene erator (RNG) AES key purge operatiion Self-Destruct completio on time Whole mo odule erase
C Characteristic AES-128 en ncryption in C CTR mode, AES key purge e feature. Contact facctory for full da ata sheet. Yes. Resullts accessible e using the RS S-232 port. Key erasure e and new random key generated in < 4 sec Less than 0 0.100 secondss for self-desttruct operatio on, then 4 seconds forr the AES keyy over-write, p plus whole mo odule erase time (if enabled). Yes. < 20 ssec (MSM048 8) < 40 sec (M MSM096)
Auto resta art of Crypto or o Flash Eras se after power los ss
Yes
Internal flash capacity – (MSM096) Internal flash capacity – (MSM048) Type of flash storage media m Sector siz ze Total LBA As available – (MSM096) Total LBA As available – (MSM048)
9 96 GiB (1 GiB B = 1,073,741 1,824 bytes) 4 48 GiB (1 GiB B = 1,073,741 1,824 bytes) 12/24 4 die, 32 Gbit each. 25nm, 1-bit SLC NA AND 512 bytes 1 146,533,968 73,277,568
Power to ready time Operating g system com mpatibility NCQ and Trim comma and support
Lesss than 2 secon nds OS S independen nt Yes Re eed Solomon. C Corrects 16, 9 9-bit symbolss per sector. 1 x 10-17 Yes, 32--bit per sector CRC 2 2.25 PB (MSM M096) 1.1 PB B (MSM048) Based o on 100K PE ccycles Yes (both rea ad and write o operations) Appro oximately oncce per 1000 hours of opera ation Sand dforce SF-15 565 Yes Boot code stored in flassh media Yes, from m energy storred in externa al array of cap pacitors Yes Yes
ECC UBER (un ncorrectable bit b error rate) “Silent da ata corruption”” protection Minimum write endurance (total bytes written) s is an estima ate only. Note: This Wear leve eling Bit Disturb b scrubbing NAND flash processorr Data com mpression to extend e flash liffe Boot code e Power dis sturbance pro otection Over/Und der voltage protection Brown-ou ut/Black-out protection
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Table 7: System S Spec cifications an nd Characterristics (Contiinued) Input supply sudden sh hort protection Power-on n inrush current limiting
Yes Yess, See Figure 2
Life remaining indicato or (0 to 100%)) Temperatture Power on n hours indication External capacitor c arra ay health. (0 to 100%)
Yess, using S.M.A A.R.T. comm mand (0xE7) Yess, using S.M.A A.R.T. comm mand (0xC2) Yess, using S.M.A A.R.T. comm mand (0x09) Yess, using S.M.A A.R.T. comm mand (0xEB)
ESD prote ection Status an nd mode indic cations Field upgradable firmw ware Operating g Temperature
2000 V Activity LE ED and Statuss signals. Yes -40 0°C to +85 °C C
MSM048 Read R and Write W Perform mance Benc chmarks (A Actual perform mance will vary based on d data )
Figure 5a a: ATTO
Figure 5 5b: HD Tun ne Pro 4.6 ffile benchm mark
Figure 5c: HD Tune e 4.6 Rand dom Read
Figurre 5d: HD T Tune Pro 4 4.6 Random m Write
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Iom meter resu ults (versio on 2006.07..27) for th he MSM048 8 Sequ uential MBps s 512 B
1 KiB
2 KiB
4 KiB
8 KiB
1 16 KiB
32 K KiB
64 KiB B
128 KiB
100% % Read
5
10
18
33
54
78
105
132
156
75%R 25%W
6
10
16
29
41
51
64
6 76
80
50%R 50%W
6
11
17
29
36
44
51
48 8
51
25%R 75%W
7
13
19
31
38
41
39
39 9
39
% Write 100%
7
15
21
40
43
43
43
43 3
44
16 KiB 1
32 K KiB
64 KiB B
dom MBps Rand 512 B
1 KiB
100% % Read
2
5
10
19
35
59
87
116
147
75%R 25%W
2
4
9
17
29
45
65
9 89
112
50%R 50%W
2
4
8
15
24
37
52
64 4
55
25%R 75%W
1
3
6
10
15
22
31
37 7
38
% Write 100%
1
3
5
9
14
20
28
30 0
28
512 B
1 KiB
2 KiB
4 KiB
8 KiB
16 KiB 1
32 K KiB
64 KiB B
128 KiB
100% % Read
1100 05
10798
9683
8693
6984
5 5026
339 91
2118
1252
75%R 25%W
1323 33
10547
8583
7588
5288
3 3276
205 53
1229
640
50%R 50%W
1393 35
12206
8739
7430
4658
2 2851
164 48
783
410
25%R 75%W
1541 18
13831
9801
8043
4913
2 2637
125 53
636
319
1631 19
15891
10993
10421
5521
2 2788
139 99
694
358
512 B
1 KiB
2 KiB
4 KiB
8 KiB
1 16 KiB
32 K KiB
64 KiB B
128 KiB
100% % Read
5467 7
5398
5248
5028
4489
3 3810
279 97
1858
1179
75%R 25%W
5022 2
5021
4715
4421
3731
2 2939
209 99
1426
897
50%R 50%W
4688 8
4546
4257
3943
3168
2 2428
169 93
1024
441
25%R 75%W
3558 8
3429
3081
2718
2024
1 1468
101 15
604
305
% Write 100%
3205 5
3110
2809
2432
1843
1333 1
903 3
492
228
2 KiB
4 KiB
8 KiB
128 KiB
uential IOPS Sequ
% Write 100%
Rand dom IOPS
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Iom meter resu ults (versio on 2006.07..27) for th he MSM096 6 Sequ uential MBps s 512 B
1 KiB
2 KiB
4 KiB
8 KiB
1 16 KiB
32 K KiB
64 KiB B
128 KiB
100% % Reads
5
11
21
39
65
95
126
156
179
75%R 25%W
7
12
21
39
57
77
98
124 4
147
50%R 50%W
7
12
20
39
55
73
96
121
131
25%R 75%W
8
14
21
41
55
72
89
8 98
98
% Writes 100%
8
15
23
71
86
82
81
84 4
83
16 KiB 1
32 K KiB
64 KiB B
dom MBps Rand 512 B
1 KiB
100% % Reads
3
6
11
22
41
71
113
157
197
75%R 25%W
2
5
11
21
36
59
87
122
156
50%R 50%W
2
5
10
19
32
49
70
9 99
127
25%R 75%W
2
5
9
17
27
40
56
79 9
105
% Writes 100%
2
4
8
15
24
35
48
69 9
92
2 KiB
4 KiB
8 KiB
128 KiB
uential IOPS Sequ 512 B
1 KiB
2 KiB
4 KiB
8 KiB
16 KiB 1
32 K KiB
64 KiB B
128 KiB
100% % Reads
1184 46
11549
10998
10231
8345
6 6102
405 52
2496
1436
75%R 25%W
1463 38
12872
10830
10103
7309
4 4943
316 61
1999
1177
50%R 50%W
1540 04
13236
10507
10073
7084
4 4715
308 85
1941
1048
25%R 75%W
1640 07
14527
11008
10559
7147
4 4636
285 50
1577
786
% Writes 100%
1716 62
15860
12091
18230
11121
5 5292
261 17
1349
670
dom IOPS Rand 512 B
1 KiB
2 KiB
4 KiB
8 KiB
1 16 KiB
32 K KiB
64 KiB B
128 KiB
100% % Reads
6228 8
6184
6104
5884
5322
4 4600
361 17
2526
1578
75%R 25%W
6136 6
5955
5704
5420
4686
3 3783
279 91
1957
1252
50%R 50%W
5872 2
5631
5328
5029
4113
3 3166
224 48
1588
1020
25%R 75%W
5460 0
5181
4819
4473
3500
2 2612
181 17
1278
840
% Writes 100%
5059 9
4771
4391
4084
3074
2 2256
155 57
1112
739
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
21
© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
MSM048//MSM096 Description D n The MSM04 48/MSM096 is s a complete SATA based system-in-a--module deve eloped by Miccrosemi Corpo oration to address the e need for sec cure, high den nsity storage in a compact BGA form factor. The MSM04 48/MSM096 contains c a sta ate-of-the-art flash f processsor, 12/24 NA AND flash die,, 5 power sup pplies, voltage supervisor logic, power isolation logic, overr/under voltag ge isolation, h hardware auth hentication, R Random nerator, AES 128 encryptio on, SHA-256 crypto logic, AT logic, tem mperature-rate e-of-change m monitornumber Gen ing, self-des struct logic an nd a user accessible stand-alone crypto o device. With the application of po ower, a voltag ge supervisorr in the MSM0 048/MSM096 module begins monitoring g the Vdd el. Once Vdd reaches app proximately 2 V, the voltage e supervisor b begins monito oring the backup powvoltage leve er supply vo oltage, Backup_Pwr. Once e the Backup_ _Pwr supply reaches acce eptable levelss the voltage ssupervisor sets the e Module_Actiive signal to a high level. Internally, a buck/boost regulator r regu ulates Vdd to 5.0 V and ou tputs the boo osted voltage on the Backup_Chargerr pin. The Ba ackup_Charge er pin typically y connects to o the Backup_ _Pwr pins and d an external array of backup pow wer supply cap pacitors. The e Backup_Charger pin provvides a low current trickle charge to the e backup power supp ply capacitors. Optionally, an external re esistor can be e connected b between the B Backup_Charrger pin and the Bac ckup_Pwr cap pacitor array to t further limitt inrush curre ent. Capacitors in the Backkup_Pwr arra ay supply several millii-seconds of full f power ope eration during g power down n events. The e ability to con ntinue operation for a short time after a a total po ower loss allows the MSM0 048/MSM096 6 to shut down n in an orderlyy fashion und der all power disturbance conditions. Once the vo oltage on the Backup_Pwr pins (and the e connected ccapacitor arra ay) reaches a fully charged d value of 5.0 V, the vo oltage superv visor enables regulators that power the integrated fla ash processorr. When the fflash processor regu ulators reach valid v voltages s, the voltage supervisor e nables the fla ash processorr to begin norrmal operation. If any a failure occ curs during th he power-on sequence, s the e voltage sup pervision write es an error co ode to the status signa als, Status_0, Status_1, an nd Status_2 and a restarts th he entire powe er-up processs. After a succ cessful powerr-on cycle, the e voltage supervisor contin nually monitorrs Vdd and all module volta ages. Any significant voltage disturbance ca auses the volttage supervissor to switch to p_Pwr supply and sigo the Backup cessor to shut down. Afterr the flash pro ocessor comp pletes an orde erly shutdown n, the nal the interrnal flash proc voltage supervisor disables the internal regulators, waits for Vdd d to stabilize, then resume es a normal po ower-on sequence.
Normal operation o In the normal operating mode, m the MS SM048/MSM0 096 operates as a standard d SATA stora age device compliant TA) specification version 2.6. The SATA A interface op perates at spe eeds of 1.5 G Gbps and with the Serrial ATA (SAT 3 Gbps. Wh hen the MSM M048/MSM096 6 first communicates with tthe host syste em, it attemptts communica ation at 3 Gbps and automatically a switches s to 1.5 Gbps if the e initial comm unication is u unsuccessful. Like most flash based sto orage system ms, the MSM0 048/MSM096 attains the highest level off performance e when stem writes orr reads data in block sizes of 64 KiB an d larger. Add ditionally, like all NAND fla ash-based the host sys storage systems the med dia is consum mable and will eventually w wear out. Systtems designe ers need to be e aware ention capabillities of the NA AND flash dim minish with co ontinued use as the device e approachess the natuthat the rete ral write end durance limit. The flash in the MSM048 8/MSM096 ha as an initial re etention capab bility of aboutt 10 years. The retention cap pability at end d of life may be b less than 3 30 days.
Low Pow wer Modes The Serial ATA A specifica ation defines two t power sav ving modes, p partial and slu umber. The M MSM048/MSM096 implements bo oth power ma anagement mo odes and welll as a Microssemi proprieta ary Deep Slum mber mode (Z ZPM). Pulling the ZPM Z pin to a high level allo ows the MSM M048/MSM096 6 to enter a vvery low powe er Deep Slumber mode. The MSM048/MS SM096 treats the ZPM mod de in the sam me way as it trreats a hot sw wap or power down SM096 completes the command currenttly in progresss and then prroceeds to an orderly event. The MSM048/MS shutdown. Z mode, th he MSM048/M MSM096 igno ores command ds on the SA ATA bus so it iis important th hat exterDuring the ZPM nal logic con ntrol the ZPM M pin in order to wake the module m from tthe ZPM mod de and resume normal devvice operation as req quired by the host h system. Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Destruct operation (combined d with Eras se_Triggerr on MSD m model) The MSM04 48/MSM096 has h built in alg gorithms capa able of initiati ng a one-time e self-destrucct operation in n less than 100 ms s. The destru uct process is s covert and produces p no sspark, flame, or heat, and tthe form facto or of the module rem mains unchang ged during an nd after the de estruct operattion. The desstruct method d inflicts changes to control algo orithms/logic within w the mod dule, and eras ses internal p product firmwa are. The process is perma anent across power cycles, and d is not revers sible. Data in n the flash me edia is inacce essible. Once the destruct o operation o in a low l power mo ode similar to ZPM. The s tatus signals Status_0, Sta atus_1 completes, the module operates _2 indicate tha at a self-destrruct operation n completed. To prevent a accidental desstruct and era ase operand Status_ ations, Micrrosemi supports a part num mber to ship devices d with th he Self_Destruct and Erasse_Trigger pin ns pin disabled. The T host can use u the HWET T and HWSD D RS-232 com mmand to individually enab ble or disable each trigger inputt. The MSM04 48/MSM096 further f protectts stored data a by triggering g a whole mo odule erase, a and/or an AES S key purge opera ation in paralllel with the se elf-destruct. After A the self--destruct operration comple etes, the NAN ND media is no longerr accessible, is erased, and d a different AES A key repla aces the prevvious AES keyy. The Self_De estruct input contains c a we eak (10K) pull down resisto or to prevent an unintentio onal destruct o operation. In applicatio ons that do no ot need the se elf-destruct fe eature, tie the Self_Destrucct pin to groun nd. To trigger a destruct ope eration, bring the t Destruct pin p high for 20 0 ms or longe er or use the RS-232 modu ule demand. struct comm The MSM04 48/MSM096 contains c a pro ogrammable feature f to perrform an automatic self-destruct operation, after multiple autthentication fa ailures, AT Inttegrity failures s, or tempera ature-rate-of-cchange eventss. These features are programmable using com mmands from the RS-232 port. p Refer to o Table 9 for instructions o on how to imp plement S-232 comma ands. security features with RS
Encryptio on and AES S Key Purg ge The MSM04 48/MSM096 protects p data at rest in the flash storage e media using g a self-generrated key and hardware based d AES-128 encryption runn ning in a CTR mode. 48/MSM096 supports s an AES A key purge e feature, wh ich renders d data to a foren nsically unreccoverable The MSM04 encrypted state s by elimin nation of the encryption e key y. The AES kkey purge ope eration comp pletes in 4 secconds. The feature eliminates th he AES key and erases all module meta a-data (cache e data, tables,, and pointerss). When ew device sta ate. All previo ous stored data is unthe purge operation completes, the MSM048/MSM096 is in a ne e because botth the AES ke ey and the tra anslation table es went through an initializzation processs. recoverable
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Hardware e Authentic cation The MSM04 48/MSM096 contains c hardware authenttication logic tthat is capablle of preventin ng the module e from operating in n unauthorized d environmen nts. The module implemen nts authentica ation using ra andom 256-bitt SHA256 hashed d challenges to t an externall crypto device or a crypto host simulato or. Removing g the module from an authorized environment e causes c the module m to ceas se further ope erations and sshutdown to a low power m mode similar to ZP PM. It is also o possible to setup s the MSM M048/MSM09 96 to initiate a an erase and//or self-destru uct operation after de etection of atte empted opera ation in an un nauthorized en nvironment. t by the MSM048/MSM M M096 module e is often app lication depen ndent. Use th he RS-232 interface to The action taken setup and program p the hardware h auth hentication mo ode. Hardwa are authentica ation may require additiona al external logic.
256-bit Pa ass-Phrase e The MSM04 48/MSM096 has h the ability y to inhibit all storage s opera ations and ign nore RS-232 commands u until the host system m supplies the e module with a valid Pass--Phrase using g the RS-232 interface. Th he module usses SHA256 to hash h an initial Pas ss-Phrase sen nt by a host system. s Intern es a hashed vversion of the e host nal logic save supplied inittial Pass-Phra ase in a secure memory. The T module b begins Pass-P Phrase locked d operation at the beginning of each power-on n cycle if the module m was Pass-Phrase P locked during g a previous p power cycle. PassPhrase lock ked operation is persistent across power cycles so it is not necesssary to re-lockk the module prior to each succes ssive power cycle. c The module remains in Pass-Phrrase locked m mode across a all successive e power cycles until a Pass-Phras se Off comma and executes. ower, the mod dule enters a low power m mode if the Pa ass-Phrase loccked mode iss active. With the application of po e monitors the e RS-232 portt for a Pass-P Phrase from th he host syste em. During this phase, the module The module maintains th he storage intterface in a disabled state. When the ho upplies a Passs-Phrase value, the ost system su module hashes it with SH HA-256 and compares c the hashed passs phrase to the previously sstored (hashe ed) PassPhrase. If the two Pass--Phrases matc ch, the MSM0 048/MSM096 6 unlocks and begins opera ating normallyy. Microm with the Pass-Phrase feature disabled. d To begin Pass-P Phrase locked d operation, u use the semi ships modules RS-232 port to install an initial Pass-P Phrase. he Pass-Phra ase locked mo ode if the currrent Pass-Phrrase is unkno own. If the Pa assIt is not possible to exit th nknown, the only o way to re estore the ope eration of the module is to trigger a who ole module errase opPhrase is un eration. Refer to Table 9 for a descrip ption of Pass--Phrase and o other RS-232 2 security com mmands. Micrrosemi can customize the operation of the Pa ass-Phrase fe eature to mee t the requirem ments of custo omer applicattions. crosemi for de etails. Contact Mic
ash Erase Operations O s Crypto Errase or Fla A Crypto or whole modulle Flash Erase feature is available. a The e Crypto Erasse clears the e encryption ke ey and he Flash Eras se feature era ases the NAN ND flash. generates a new key. Th Warning: To T avoid poten ntial permane ent corruption of the flash ccontroller, it iss critical that tthe host syste em avoid a power loss event within n 4 seconds of o triggering Crypto C Erase o or Flash Erasse operations. h attached to the Erase_T 48/MSM096 supports s three e triggering methods: m An e external switch Trigger inThe MSM04 put, the ATA A security fea ature set, or a RS-232 com mmand. The A ATA Security Feature Set uses the Seccurity Erase Unit and a Security Erase Preparre ATA comm mands. The M MSM048/MSM M096 Program mmer’s guide includes additional in nformation.
ECC (Erro or Correction) NAND flash h devices are based on a consumable c te echnology. C Continued rea ad and write o operations cau use bit disturb errors and a slow w continuous degradation d of o the storage e media. Whille nothing can n stop the deg gradation D media, data a managemen nt techniques s and error co orrection can g greatly extend d the life of prroducts of the NAND incorporatin ng NAND flash h. Using a Re eed-Solomon n error-correcttion algorithm m, the Microse emi MSM048//MSM096 module has s the ability to correct 16, 9-bit 9 symbols in each 512 b byte sector accross the entire SSD. Thiss translates into an n Uncorrectab ble Bit Error Rate R (UBER) of o per 10-17. Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Bit Disturrb Scrubbiing The individu ual bits in NAN ND flash are susceptible to o corruption fr from random b bit-disturb errrors. These e errors build up slow wly over time and will, if left uncorrected d, eventually cause uncorrrectable ECC C errors and early device failure. The causes of the errors are the very operations th hat make the fflash device u useful: read, p program, o Each time one of these ope erations occurrs, a tiny bit o of energy leakks/disturbs nearby and erase operations. storage cells. Over time, the continuin ng energy dis sturbances ca ause bits to flip state. Whe en enough bitts in a e error correc ction logic can n no longer co orrect all the e errors and an n uncorrectable ECC given sector flip state, the M048/MSM096 6 flash proces ssor containss algorithms to o mitigate bit disturb errorss by readfailure occurs. The MSM edia once eve ery 1000 hourrs of operation n. This ing, correcting, and re-wrriting the entirre contents off the flash me e opportunity for the bit-dis sturb errors to o build up to the 16-symbo ol correction limit of the “bit re-fresh” removes the MSM048/MSM096 flash processor.
CRC (Cyc clic Redun ndancy Che eck) and Silent S Data Corruption n The Microse emi MSM048/MSM096 inc cludes a 32-biit CRC, which h acts as a fin nal check for tthe integrity o of data returned to the host system m. The CRC function f provides protectio on against “sillent data corrruption”. The CRC ops not correct errors; instea ad, it verifies that the data rreturned by th he ECC is the e data originally written eration does by the host. Like any oth her flash-base ed storage de evice, as the n number of wr ite cycles issu ued to the oaches the wrrite enduranc ce limit, ECC e errors becom me more and m more frequentt. At the MSM048/MSM096 appro w continued d use, the number of bit errrors eventua lly exceeds th he number off ECC symbolls that the end of life, with module can n correct. At this point, the MSM048/MS SM096 CRC l ogic detects a any uncorrecctable ECC errrors and notifies the host system of o the error. Without W CRC protection, “ssilent data co orruption” wou uld go unrecognized y lead to unpredictable operation in the host system . and possibly
Power Disturbance Protection n A majority of o storage dev vice field-failures in extended environme ent applicatio ons are tracea able to different types of power dis sruptions. Pow wer spikes, noise, unexpected power lo oss, brownoutts, and variou us other host based power supp ply problems can c lead to pe ermanent corrruption and d ata loss. Many commodity storage pro oducts use batterie es or super ca apacitors to prrovide hold-up time for the e flash controlller/processorr to backup crritical tables and pro oceed to an orderly o shutdo own during po ower disturba nces. Using batteries and supe er capacitors is acceptable for comparattively benign environmentss like that of a an enterded environm ments common n to the defen nse market, te emperature e extremes causse these prise serverr but in extend devices to quickly q degrad de and fail. Once O degrade ed, the next po ower disturba ance causes a an unrecoverrable failure. his as a critica al issue in high h reliability mission critical systems, the e Microsemi M MSM048/MSM M096 utiRealizing th lizes a smalll array of exte ernal capacito ors and “on-chip” proprieta ary power ma nagement cirrcuitry. When n the MSM048/MSM096 detec cts a significan nt power distu urbance even nt, the power managementt circuitry fullyy isolates ernal power so ource, and be egins using en al capacitor a array to the module from the exte nergy stored in the externa t an orderly shutdown. s fully power module while it proceeds to al capacitor arrray that supp plies the energy during pow wer loss even nts must be la arge enough tto mainThe externa tain full pow wer to the mod dule during th he entire powe er down proce ess. Refer to o Table 2 to determine the minimum required extternal backup p power supplly capacitance e. Microsem i does not reccommend the e use of superr capacitors as the energy e storag ge device in th he backup po ower supply. S Super capacittors contain ccomponents th hat break down at high temperature es (greater th han 50° C) and freeze at lo ow temperaturres.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
Design an nd Manufa acturing The MSM04 48/MSM096 was w designed d by US citizens and manu factured in a trusted (DME EA accredited d) US facility with full BOM and assembly a conttrol and cleared staff for cl assified programs. The M MSM048/MSM M096 dew in labs at a the trusted facility in Pho oenix Arizona a. This is the same facility which manuffacturers, sign team works assembles, and tests the e MSD50/MSD D100 and oth her secure sto orage productts.
ces in Operration of th he MSD mo odel (2.5” F Form-Facto or) Differenc The MSD04 48 and MSD0 096 models ha ave a differen nt from factor than the MSM M048 and the e MSM096. T The MSD048/MS SM096 mode els are design ned around the industry sta andard 2.5” fo orm-factor insstead of a BGA A from factor. A su ummary of the e feature diffe erences appear in the list b below.
e MSD models do not supp port AT Integrrity features. The The e MSD model ZPM (deep slumber s mode e) is located o on pin P1 of tthe power seg gment of the S SATA con nnector. . P1
S1
POWER Power S SEGMENT Co onnector
SIGNA AL SATA TA SEGME ENT Conne ector Pin S1
Pin P P1
The e MSD mode el Erase_Trigg ger pin is loca ated on pin P2 2 of the powe er segment off the SATA co onnector. The e MSD mode el Auth pin is located on pin n P3 of the po ower segment of the SATA A connector. The e MSD model shares the Erase_Trigger E r pin (P2) for b both erase an nd destruct op perations. An n RS-232 com mmand progra ams the opera ation of the pin or the unit can be specia al ordered witth erase or de estruct ope eration pre-pro ogrammed. The e MSD model includes all required r exterrnal compone ents as well a as operating L LEDs.
Orange LED (DAS)
Green LED and (Power on a Module is Acttive)
Blue LED (Fault)
.
Yellow LED 2) (Status 2
Write W Protect (Pin ns 3,4) Open O = Normal operation o Shorted S = Write protected. p
Yellow LED (Status 1)
Ye ellow L ED atus 0) (Sta
The e status signa als on the MSD model are available a on L LEDs and from the RS-232 2 port. The e MSD model has the write e protect pin lo ocated on the e RS-232 porrt.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
RS-232 Communica C ations Portt An RS-232 port with 3.3 V logic levels s connects to the Rx_Port and Tx_Port pins of the MSM048/MSM M096 d MSD048/MS SD075 SSD. The RS-232 port can be u used to determ mine the statu us of the mod dule and module and execute com mmands that enable/disable the module e’s features (i .e., authenticcation, self de estruct, etc.). Table 9 lists the sup pported RS-23 32 commands s. The module implementss the port with 3.3 V LVTT TL levels. The e RS-232 port setup requires 19,20 00 baud with 8 data bits, one stop bit, a nd no parity. Notes:
The e RS-232 com mmands are not n case sensitive.
The e RS-232 com mmands use ASCII A hexade ecimal values .
The e RS-232 com mmands mustt include a tra ailing carriage -return chara acter, 0x0D.
The e RS-232 com mmands mustt not include spaces. s
Tab ble 9 describe es the RS-232 2 commands with w bracket ccharacters su urrounding the e input argum ments; the brac cket characte ers must not be b included in n the RS-232 command.
The e module resp ponds with an n error message with forma at E: when a co ommand doe es not com mplete succes ssfully.
Any y command th hat is ignored because of an a improper p prior setup, mode, or input syntax error cause the mod dule to respon nd with an errror message with format E E:.
The e module resp ponds to all RS-232 R commands with a trrailing carriag ge-return charracter (0x0D)), new-line cha aracters (0x0A A), and promp pt ‘>’ characte er (0x3E).
Som me of the RS--232 comman nds change th he operating m mode; use the e ST (status) command to determin ne the active modes m and module m status.
Reffer to Table 10 0 for example es of comman nd usage.
Onc ce the module e is command ded to executte a self-destrruct command d, the RS-232 2 port responds to all com mmands with the ‘!’ charactter followed by b a carriage--return characcter (0x0D), a and new-line ccharacters s (0x0A). The e self-destructt operation is irreversible. It is not posssible to recove er or restore tthe module to a working state after ex xecuting a self-destruct ope eration.
Table 9: RS-232 co ommands2 Com mmand
Com mmand descrip ption Contact Microsemi for the full data s heet.
Table 10: RS-232 command c examples e RS-232 Command Examples
Descriptio on
Contact Microsemi fo or the full data a sheet.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
MSM048/MSM096/ MSD048 8/MSD09 96 Part Numberring Guiide M SM XXX X B
M
2
L – M
1 2
5
6
7
3
4
8
00
I
9 10 0
P 11
mple part numbers: Exam 2L-M00C, MS SM048BM2L-MDXC, MSM M048BM2L-M0 00I, MSM048 8BM2L-MDXI MSM048BM2 MSM096BM2 2L-M00C, MS SM096BM2L-MDXC, MSM M096BM2L-M0 00I, MSM096 6BM2L-MDXI MSM048BM2 2L-M00CP, MSM048BM2L M L-MDXCP, MS SM048BM2L L-M00IP, MSM M048BM2L-M MDXIP MSM096BM2 2L-M00CP, MSM096BM2L M L-MDXCP, MS SM096BM2L L-M00IP, MSM M096BM2L-M MDXIP urer Field 1: Manufactu M = Micros semi Corp or Field 2: Form Facto m x 28 mm BG GA module. 524 5 pins. SM = 32 mm SD = 2.5” standard SSD form-factor. apacity to Hos st Field 3: NAND Ca 048 = 37.5 GB G (48 GiB internal i capac city prior to ovver-provisioning) 096 = 75.0 GB G (96 GiB internal i capac city prior to ovver-provisioning) n Field 4: Encryption B = AES-128 Encryption using SF-15 565 processo or anufacturer Field 5: Media Ma M = Micron n pe Field 6: Media Typ S NAND fla ash, 32-Gbit technology t (2 25 nm) device e 2 = 1-bit SLC Field 7 : Constructtion ed BGAs L = Leade – 8 Power supply Option Field 8: t 5.0 V powe er supply rang ge. M = 3.3 V to 9 Customizable Features s Field 9: uthentication, No Self-Desttruct, No AT Integrity. odels) No Au 00 = (MSM and MSD mo AT Integrity. The MSD 5” form facto or) Authenticcation, Self-Destruct, No A DT = (MSD model in 2.5 el combines th he Self_Destrruct and Erasse_Trigger fun nctions into on ne pin. mode estruct, AT Integrity. DX = (MSM model in BG GA form-facto or) Authenticcation, Self-De Field 10 : Operatin ng Temperatu ure o o = Industrrial ( -40 C to o +85 C ) I o o mercial ( 0 C to t 70 C ) C = Comm Field 11 : Classific cation. oduct shipped d with trigger pins enabled d. Blank = Fully qualified pro q produ uct shipped in n protected m mode that has the trigger piins disabled. P = Fully qualified Produc ct is shipped d with the external e trigg gers, Erase_ _Trigger and Self_Destrucct, in the disable ed state. Use e the HWET, HWSD RS-23 32 commands to enable th he external triigger(s).
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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© 20144 Microsemi Corporatio on. All rights reserved d
NOT RECOMMENDED FOR NEW DESIGNS
MSM048/ M /MSM096 and MSD048/M MSD096
MSM048 and MSM0 096 EVALU UATION BO OARD Figure 7 sho ows an image e of the evaluation board fo or the MSM04 48 or MSM09 96. The part n number for th he 48 GB evaluation board b is MSM M048BM2L-M M00CEV an nd the 96 GB B version is M MSM096BM M2L- M00CE EV.
Figure 7: MSM048/M MSM096 evalu uation board d.
Microsemi Corporation reserv ves the right to change e products or specifications without notice. 3 May 2014 SHORTENED DATA SHEET.. Contact Microsemii to receive the full data sheet. Rev. 02.03 Microsemi Corporation • (602) 437-1520 • www.mic crosemi.com/pmgp
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