Transcript
MIMMG100DR120B 1200V 100A IGBT Module RoHS Compliant
FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes
APPLICATIONS · Invertor · Convertor
GD Series Module
· Welder · SMPS and UPS · Induction Heating
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Values
Unit
IGBT VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
160
A
TC=80°C
100
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
340
A
TC=80°C, tp=1ms
220
A
Ptot
Power Dissipation Per IGBT
1000
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
180
A
TC=80°C
120
A
180
A
AC, t=1min
Free-Wheeling Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
860
A
Forward Current
TJ=45°C, t=8.3ms, Sine
900
A
MIMMG100DR120B ELECTRICAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Min.
Typ.
Max.
Unit
5
6.2
7
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=4mA
Collector - Emitter
IC=100A, VGE=15V, TJ=25°C
1.8
V
Saturation Voltage
IC=100A, VGE=15V, TJ=125°C
2.0
V
VCE=1200V, VGE=0V, TJ=25°C
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=600V,IC=100A,VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
1
VCE=1200V, VGE=0V, TJ=125°C
4 -400
mA mA
400
nA
1200
nC
8.58
nF
0.60
nF
0.40
nF
VCC=600V, IC=100A
270
ns
Rise Time
RG =9Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=25°C
480
ns
tf
Fall Time
Inductive Load
60
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=100A
290
ns
tr
Rise Time
RG =9Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=125°C
550
ns
tf
Fall Time
Inductive Load
65
ns
Eon
Turn - on Switching Energy
VCC=600V, IC=100A TJ=25°C
12.0
mJ
RG =9Ω
TJ=125°C
16.8
mJ
Eoff
Turn - off Switching Energy
VGE=±15V
TJ=25°C
7.4
mJ
Inductive Load
TJ=125°C
11.6
mJ
VCE=25V, VGE=0V, f =1MHz
Free-Wheeling Diode IF=100A, VGE=0V, TJ=25°C
1.9
2.3
V
IF=100A, VGE=0V, TJ=125°C
1.7
2.1
V
Reverse Recovery Time
IF=100A, VR=800V
230
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
80
A
Qrr
Reverse Recovery Charge
TJ=125°C
9.7
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.15
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.3
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
Weight
285
g
MIMMG100DR120B 200
200
160
160 VCE=20V
120 TJ =125°C
IC (A)
IC (A)
TJ =25°C
120
80
80 TJ =125°C
40
40
TJ =25°C
0 0
0
1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5
1
VCC=600V RG=9ohm VGE=±15V TJ =125°C
24
60 Eon
40 20 0 0
4
6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics
VCC=600V IC=100A VGE=±15V TJ =125°C
30
Eon Eoff (mJ)
Eon Eoff (mJ)
80
2
36
120 100
0
Eon
18 12
Eoff
6
Eoff
0
35 15 20 25 30 RG（ohm） Figure4. Switching Energy vs. Gate Resistor
100 150 200 250 300 350 IC（A） Figure3. Switching Energy vs. Collector Current 50
103
0
5
10
103 td(off) td(off)
102
td(on)
t (ns)
t (ns)
td(on)
tf
102 tf tr
tr
10 0
VCC=600V RG=9ohm VGE=±15V TJ =125°C
40
80 120 160 200 240 280 IC（A） Figure5. Switching Times vs. Collector Current
10
VCC=600V IC=100A VGE=±15V TJ =125°C
35 15 20 25 30 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0
5
10
MIMMG100DR120B 10
25 20
Cies
VCC=600V IC=100A TJ =25°C
C (nF)
VGE (V)
15 10
VGE =0V f=1MHz
1
Coes
Cres
5 0.1
0.4 0.8 0.6 1.0 Qg（µC） Figure7. Gate Charge characteristics 0.2
0
400
2000
320
1600
240
1200
160 80 0 0
0
20
25
30
35
400 600 800 1000 1200 1400 VCE（V） Figure10. Short Circuit Safe Operating Area
600 800 1000 1200 1400 VCE（V） Figure9. Reverse Biased Safe Operating Area 400
0
200
300 TJ =150°C VGE ≥15V
160
250 200
120 IF (A)
IC(A)
TJ =125°C
80
150 100 TJ =25°C
40 0 0
15
TJ =150°C TC =25°C VGE =15V tsc≤10µs
400
200
10
800
TJ =150°C TC =25°C VGE =15V
200
5
VCE（V） Figure8. Typical Capacitances vs. VCE
ICsc (A)
ICpuls (A)
0 0
50
50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5
1.0
MIMMG100DR120B 1
1
-1
-1
10
10-2
ZthJC (K/W)
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-3
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
-4
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode
10
10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT
1 3
2
4
5
7
6
Figure15. Circuit Diagram
M6
8.5
30.0 30.5
2.8x0.5
22.0
93.0 6.0
Φ6.5
28.0
3 28.0
108.0 Dimensions in mm Figure16. Package Outlines
6.0
2
4 5
1
20.0
62.0
15.0
7 6
6.0
18
48.0 16.0
ZthJC (K/W)
10
