Transcript
MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant
FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes
APPLICATIONS · Invertor · Convertor
GD Series Module
· Welder · SMPS and UPS · Induction Heating
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Values
Unit
IGBT VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
210
A
TC=80°C
150
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
420
A
TC=80°C, tp=1ms
300
A
Ptot
Power Dissipation Per IGBT
1100
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
180
A
TC=80°C
120
A
180
A
AC, t=1min
Free-Wheeling Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
860
A
Forward Current
TJ=45°C, t=8.3ms, Sine
900
A
MIMMG150DR120UA ELECTRICAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Min.
Typ.
Max.
Unit
5
6.2
7
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6mA
Collector - Emitter
IC=150A, VGE=15V, TJ=25°C
1.8
V
Saturation Voltage
IC=150A, VGE=15V, TJ=125°C
2.0
V
VCE=1200V, VGE=0V, TJ=25°C
0.4
VCE=1200V, VGE=0V, TJ=125°C
4
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=600V,IC=150A,VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
-200
1
mA mA
200
nA
1550
nC
11
nF
0.8
nF
0.52
nF
VCC=600V, IC=150A
150
ns
Rise Time
RG =7.5Ω,VGE=±15V
65
ns
td(off)
Turn - off Delay Time
TJ=25°C
440
ns
tf
Fall Time
Inductive Load
55
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=150A
160
ns
tr
Rise Time
RG =7.5Ω,VGE=±15V
65
ns
td(off)
Turn - off Delay Time
TJ=125°C
500
ns
tf
Fall Time
Inductive Load
70
ns
Eon
Turn - on Switching Energy
VCC=600V, IC=150A TJ=25°C
14.9
mJ
RG =7.5Ω
TJ=125°C
20.6
mJ
Eoff
Turn - off Switching Energy
VGE=±15V
TJ=25°C
9.8
mJ
Inductive Load
TJ=125°C
15.6
mJ
VCE=25V, VGE=0V, f =1MHz
Free-Wheeling Diode IF=150A, VGE=0V, TJ=25°C
2.0
2.48
V
IF=150A, VGE=0V, TJ=125°C
1.7
2.20
V
Reverse Recovery Time
IF=150A, VR=800V
240
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
85
A
Qrr
Reverse Recovery Charge
TJ=125°C
10.5
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.11
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.27
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
Weight
285
g
300
300
250
250
200
200 TJ =25°C
IC (A)
IC (A)
MIMMG150DR120UA
150
VCE=20V
150
TJ =125°C
100
100
50
50
TJ =125°C
0 0
0
1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5
1
120
80
VCC=600V RG=7.55ohm VGE=±15V TJ =125°C
2
4
6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics
40
Eon
40 Eoff
20
VCC=600V IC=150A VGE=±15V TJ =125°C
50
60
0 0
0
60
Eon Eoff (mJ)
Eon Eoff (mJ)
100
TJ =25°C
30 20 Eoff
10 0
35 15 20 25 30 RG（ohm） Figure4. Switching Energy vs. Gate Resistor
100 150 200 250 300 350 IC（A） Figure3. Switching Energy vs. Collector Current 50
1000
Eon
0
5
10
1000 td(off)
100
td(on)
t (ns)
t (ns)
td(off)
tf
td(on)
100
tf tr
tr
10 0
40
VCC=600V RG=7.5ohm VGE=±15V TJ =125°C
120 160 200 240 280 IC（A） Figure5. Switching Times vs. Collector Current 80
10
VCC=600V IC=150A VGE=±15V TJ =125°C
35 15 20 25 30 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0
5
10
MIMMG150DR120UA 100
25 20
VCC=600V IC=150A TJ =25°C
10
Cies
C (nF)
VGE (V)
15 10
VGE =0V f=1MHz Coes
1 Cres
5 0 0
0.4
500
0
5
10
15
20
25
30
35
VCE（V） Figure8. Typical Capacitances vs. VCE
2400 2000
400
1600
300
ICsc (A)
ICpuls (A)
0.1
0.6 0.8 1.0 1.2 1.4 Qg（µC） Figure7. Gate Charge characteristics 0.2
1200
200 100 0 0
800 TJ =150°C TC =25°C VGE =15V
200
TJ =150°C TC =25°C VGE =15V tsc≤10µs
400 0
400 600 800 1000 1200 1400 VCE（V） Figure10. Short Circuit Safe Operating Area
600 800 1000 1200 1400 VCE（V） Figure9. Reverse Biased Safe Operating Area 400
300
0
200
300 TJ =150°C VGE ≥15V
250
250
200
200
IC(A)
TJ =125°C
IF (A)
150
150
100
100
50
50
TJ =25°C
0 0
50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5
1.0
MIMMG150DR120UA 1
1
-1
-1
10
10-2
ZthJC (K/W)
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-3
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
-4
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode
10
10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT
1 2
3
7
6 Figure15. Circuit Diagram
M6
8.5
30.0 30.5
2.8x0.5
22.0
93.0 6.0
Φ6.5
28.0
3 28.0
108.0 Dimensions in mm Figure16. Package Outlines
6.0
2
4 5
1
20.0
62.0
15.0
7 6
6.0
18
48.0 16.0
ZthJC (K/W)
10
