Transcript
MIMMG150S060B6EN 600V 150A IGBT Module RoHS Compliant
FEATURES □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
GS Series Module
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Values
Unit
600
V
±20
V
TC=25°C
225
A
TC=60°C
150
A
tp=1ms
300
A
500
W
TVj=25°C
600
V
TC=25°C
225
A
TC=60°C
150
A
tp=1ms
300
A
TVj =125°C, t=10ms, VR=0V
2000
A2 s
IGBT VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
2
It
MIMMG150S060B6EN ELECTRICAL AND THERMAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.9
5.8
6.5
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
Collector - Emitter
IC=150A, VGE=15V, TVj=25°C
1.45
V
Saturation Voltage
IC=150A, VGE=15V, TVj=125°C
1.6
V
VCE=600V, VGE=0V, TVj=25°C
1
mA
VCE=600V, VGE=0V, TVj=125°C
5
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=300V, IC=150A , VGE=±15V VCE=25V, VGE=0V, f =1MHz
-400 2
Ω
1.6
µC
9.3
nF
0.29
nF
VCC=300V,IC=150A,
TVj =25°C
150
ns
RG =3.3Ω,
TVj =125°C
160
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
40
ns
VCC=300V,IC=150A,
TVj =25°C
340
ns
RG =3.3Ω,
TVj =125°C
370
ns
VGE=±15V,
TVj =25°C
60
ns
Inductive Load
TVj =125°C
70
ns
VCC=300V,IC=150A,
TVj =25°C
0.85
mJ
RG =3.3Ω,
TVj =125°C
1.35
mJ
VGE=±15V,
TVj =25°C
4.1
mJ
Inductive Load
TVj =125°C
5.3
mJ
750
A
tpsc≤6µS , VGE=15V TVj=125°C,VCC=360V （ Per IGBT）
0.3
K /W
Diode IF=150A , VGE=0V, TVj =25°C
1.55
V
IF=150A , VGE=0V, TVj =125°C
1.50
V
Max. Reverse Recovery Current
IF=150A , VR=300V
180
A
Qrr
Reverse Recovery Charge
diF/dt=-5400A/μs
13.0
µC
Erec
Reverse Recovery Energy
TVj=125°C
3.5
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
IRRM
0.5
K /W
MIMMG150S060B6EN MODULE CHARACTERISTICS Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
175
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
150
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
AC, t=1min
3000
V
350
Weight
160
300
g
300 VGE =15V
240
180
TVj=25°C
IC (A)
IC (A)
240
120
180
TVj =125°C
120 TVj=125°C
60
60
0 0
0
1.2 1.6 2.0 2.4 VCE（V） Figure1. Typical Output characteristics 0.4
0.8
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE（V） Figure2. Typical Output characteristics
15
300
VCC=300V IC=150A VGE=±15V TVj =125°C
VCE =20V
12
240 180
120
TVj =125°C
Eon
9 6
Eoff
3
60 0
Eon Eoff (mJ)
IC (A)
TVj =25°C
5
6
7
9 10 11 8 VGE（V） Figure3. Typical Transfer characteristics
0
0
6
18 24 30 12 RG（Ω） Figure4. Switching Energy vs. Gate Resistor
MIMMG150S060B6EN 10 8
300
6
225 Eoff
IC (A)
Eon Eoff (mJ)
375
VCC=300V RG=3.3Ω VGE=±15V TVj =125°C
4 2
150 75
Eon
0 0
0
300 400 500 600 700 VCE（V） Figure6. Reverse Biased Safe Operating Area
60
120 180 240 300 IC（A） Figure5. Switching Energy vs. Collector Current
300
5
240
4
IF (A)
Erec (mJ)
TVj =125°C
180
60
100
200
IF=150A VCE=300V TVj =125°C
3
1
TVj =25°C
0
0
0.8 1.6 1.2 2.0 VF（V） Figure7. Diode Forward Characteristics 0.4
0
6
12
18
24
30
RG（Ω） Figure8. Switching Energy vs. Gate Resistor
1
6
RG=3.3Ω VCE=300V TVj =125°C
5
Diode
ZthJC (K/W)
4 Erec (mJ)
0
2
120
0
RG=3.3Ω VGE=±15V TVj =125°C
3
IGBT
0.1
0.01
2 1 0 0
180 240 300 IF (A) Figure9. Switching Energy vs. Forward Current 60
120
0.001 0.001
0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure10. Transient Thermal Impedance
MIMMG150S060B6EN
Figure11. Circuit Diagram
Dimensions (mm) Figure12. Package Outline
