Transcript
MIMMG200DR060UZK 600V 200A IGBT Module RoHS Compliant
FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes
APPLICATIONS · Invertor · Convertor · Welder
GD Series Module
· SMPS and UPS · Induction Heating
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Values
Unit
IGBT VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
300
A
TC=80°C
210
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
600
A
TC=80°C, tp=1ms
420
A
Ptot
Power Dissipation Per IGBT
1100
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
250
A
TC=80°C
170
A
250
A
AC, t=1min
Free-Wheeling Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
1000
A
Forward Current
TJ=45°C, t=8.3ms, Sine
1090
A
MIMMG200DR060UZK ELECTRICAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Min.
Typ.
Max.
Unit
5.5
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=500μA
3.5
Collector - Emitter
IC=200A, VGE=15V, TJ=25°C
1.9
V
Saturation Voltage
IC=200A, VGE=15V, TJ=125°C
2.1
V
VCE=600V, VGE=0V, TJ=25°C
1
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=300V, IC=200A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
VCE=600V, VGE=0V, TJ=125°C
6
mA mA
-2
2
μA
460
nC
10.6
nF
1.04
nF
0.68
nF
VCC=300V, IC=200A
45
ns
Rise Time
RG =5Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=25°C
320
ns
tf
Fall Time
Inductive Load
35
ns
td(on)
Turn - on Delay Time
VCC=300V, IC=200A
50
ns
tr
Rise Time
RG =5Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=125°C
350
ns
tf
Fall Time
Inductive Load
40
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=200A
TJ=25°C
7
mJ
RG =5Ω
TJ=125°C
9
mJ
VGE=±15V
TJ=25°C
5
mJ
Inductive Load
TJ=125°C
7
mJ
Free-Wheeling Diode IF=200A , VGE=0V, TJ=25°C
1.9
2.2
V
IF=200A , VGE=0V, TJ=125°C
1.7
2.0
V
Reverse Recovery Time
IF=200A , VR=400V
70
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
55
A
Qrr
Reverse Recovery Charge
TJ=125°C
3
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.1
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.25
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
Weight
285
g
600
600
500
500
400
400 TJ =25°C
IC (A)
IC (A)
MIMMG200DR060UZK
300
VCE=20V
TJ =25°C
300 TJ =125°C
TJ =125°C
200
200
100
100
0 0
0
1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5
1
120
80
VCC=300V RG=5ohm VGE=±15V TJ =125°C
6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics
40
60 Eon
40 20 0 0
2
4
50
Eon Eoff (mJ)
Eon Eoff (mJ)
100
0
VCC=300V IC=200A VGE=±15V TJ =125°C
30
Eon
20 10
Eoff
Eoff
0
35 15 20 25 30 RG（ohm） Figure4. Switching Energy vs. Gate Resistor
100
200 300 400 500 600 700 IC（A） Figure3. Switching Energy vs. Collector Current 103
0
5
10
103 td(off)
t (ns)
t (ns)
td(off)
102
102
tr
td(on)
td(on) tf
10 0
60
tf VCC=300V RG=5ohm VGE=±15V TJ =125°C
120 180 240 300 360 420 IC（A） Figure5. Switching Times vs. Collector Current
VCC=300V IC=200A VGE=±15V TJ =125°C
tr
10
7.5 10 12.5 15 17.5 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0
2.5
5
MIMMG200DR060UZK 25 20
100 VGE =0V f=1MHz
VCC=300V IC=200A TJ =25°C
Cies
10 C (nF)
VGE (V)
15 10
Coes
1 Cres
5 0 0
700
15
20
25
30
35
VCE（V） Figure8. Typical Capacitances vs. VCE
2400
400
1800
300
1200
200 TJ =150°C TC =25°C VGE =15V
TJ =150°C TC =25°C VGE =15V tsc≤10µs
600 0
200 300 400 500 600 700 VCE（V） Figure10. Short Circuit Safe Operating Area
200 300 400 500 600 700 VCE（V） Figure9. Reverse Biased Safe Operating Area
100
350
0
100
600 TJ =150°C VGE ≥15V
300
500
250
400
200 IF (A)
IC(A)
TJ =125°C
150
300 200
100
TJ =25°C
100
50 0 0
10
ICsc (A)
ICpuls (A)
5
3000
500
0 0
0
3600
600
100
0.1
200 400 300 500 Qg（nC） Figure7. Gate Charge characteristics 100
50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5
1.0
MIMMG200DR060UZK 1
1
-1
10-1
10-2
ZthJC (K/W)
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-3
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
-4
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode
10
10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT
1 2
3
4
5
Figure15. Circuit Diagram
M6
8.5
30.0 30.5
2.8x0.5
22.0
93.0 6.0
Φ6.5
28.0
3 28.0
108.0 Dimensions in mm Figure16. Package Outlines
6.0
2
4 5
1
20.0
62.0
15.0
7 6
6.0
18
48.0 16.0
ZthJC (K/W)
10
