Transcript
MIMMG300D060B6N 600V 300A IGBT Module RoHS Compliant
FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Integrated Gate Resistor
APPLICATIONS · Invertor · Convertor · Welder
GD Series Module
· SMPS and UPS · Induction Heating
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Values
Unit
IGBT VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
360
A
TC=60°C
300
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
720
A
TC=60°C, tp=1ms
600
A
Ptot
Power Dissipation Per IGBT
1250
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
300
A
TC=60°C
250
A
440
A
AC, t=1min
Free-Wheeling Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
1000
A
Forward Current
TJ=45°C, t=8.3ms, Sine
1090
A
MIMMG300D060B6N ELECTRICAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
2.45
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6mA
Collector - Emitter
IC=300A, VGE=15V, TJ=25°C
1.95
Saturation Voltage
IC=300A, VGE=15V, TJ=125°C
2.2
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
V
VCE=600V, VGE=0V, TJ=25°C
1
VCE=600V, VGE=0V, TJ=125°C
2
VCE=0V, VGE=±20V
-0.8 2.5
VCC=300V, IC=300A , VGE=±15V
mA mA
0.8
μA
3.5
Ω
1480
nC
13
nF
1.4
nF
1.2
nF
VCC=300V, IC=300A
125
ns
Rise Time
RG =3Ω,VGE=±15V
65
ns
td(off)
Turn - off Delay Time
TJ=25°C
300
ns
tf
Fall Time
Inductive Load
40
ns
td(on)
Turn - on Delay Time
VCC=300V, IC=300A
135
ns
tr
Rise Time
RG =3Ω,VGE=±15V
70
ns
td(off)
Turn - off Delay Time
TJ=125°C
330
ns
tf
Fall Time
Inductive Load
45
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=300A
TJ=25°C
4
mJ
RG =3Ω
TJ=125°C
6
mJ
VGE=±15V
TJ=25°C
6
mJ
Inductive Load
TJ=125°C
10
mJ
Free-Wheeling Diode IF=300A , VGE=0V, TJ=25°C
1.25
IF=300A , VGE=0V, TJ=125°C
1.2
V
Reverse Recovery Time
IF=300A , VR=300V
240
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-2000A/μs
170
A
Qrr
Reverse Recovery Charge
TJ=125°C
24
µC
VF
Forward Voltage
trr
1.6
V
THERMAL AND MECHANICAL CHARACTERISTICS Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.1
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.25
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
Weight
310
g
600
600
500
500
400
400 TJ =25°C
IC (A)
IC (A)
MIMMG300D060B6N
300
VCE=20V
300
TJ =125°C
200
200
100
100
TJ =125°C
0 0
0
1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5
1
24
16
VCC=300V RG=3ohm VGE=±15V TJ =125°C
4
6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics
Eoff
VCC=300V IC=300A VGE=±15V TJ =125°C
20 16
12 Eon
8 4 0 0
2
24
Eon Eoff (mJ)
Eon Eoff (mJ)
20
0
TJ =25°C
Eon
12
Eoff
8 4 0
14 6 8 10 12 RG（ohm） Figure4. Switching Energy vs. Gate Resistor
200 300 400 500 600 700 IC（A） Figure3. Switching Energy vs. Collector Current 100
1000
0
2
4
1000 td(off)
t (ns)
t (ns)
td(off)
100 td(on) tr
tf
10 0
tr tf
VCC=300V RG=3ohm VGE=±15V TJ =125°C
120 180 240 300 360 420 IC（A） Figure5. Switching Times vs. Collector Current 60
td(on)
100
10
VCC=300V IC=300A VGE=±15V TJ =125°C
0
2
6 8 10 12 14 RG（ohm） Figure6. Switching Times vs. Gate Resistor 4
MIMMG300D060B6N 100
25 20
Cies
VCC=300V IC=300A TJ =25°C
10
VGE =0V f=1MHz
C (nF)
VGE (V)
15 10
Coes Cres
1
5 0 0
0.1
600 1200 900 1500 Qg（nC） Figure7. Gate Charge characteristics 300
700
20
25
30
35
800 ICsc (A)
ICpuls (A)
15
1000
400 300
600 400
200 TJ =150°C TC =25°C VGE =15V
100
TJ =150°C TC =25°C VGE =15V tsc≤10µs
200 0
200 300 400 500 600 700 VCE（V） Figure10. Short Circuit Safe Operating Area
300 400 500 600 700 VCE（V） Figure9. Reverse Biased Safe Operating Area 200
420
0
100
600 TJ =150°C VGE ≥15V
360
500
300
400
240 IF (A)
IC(A)
TJ =125°C
180
300 200
120
TJ =25°C
100
60 0 0
10
VCE（V） Figure8. Typical Capacitances vs. VCE
500
0 0
5
1200
600
100
0
50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5
1.0
1
10-1
10-1 ZthJC (K/W)
1
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-2
10-3
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode
1 3
2
4
5
7
6
Figure15. Circuit Diagram
M6
8.5
30.0 30.5
2.8x0.5
22.0
93.0 6.0
Φ6.5
28.0
3 28.0
108.0 Dimensions in mm Figure16. Package Outlines
6.0
2
4 5
1
20.0
62.0
15.0
7 6
6.0
18
48.0 16.0
ZthJC (K/W)
MIMMG300D060B6N
