Transcript
MIMMG50J120U 1200V 50A IGBT Module RoHS Compliant
FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · Electrically Isolated by DBC Ceramic · Popular SOT-227 Package
APPLICATIONS · Invertor · Convertor · Welder · SMPS and UPS · Induction Heating
ABSOLUTE MAXIMUM RATINGS Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
80
A
TC=80°C
50
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
170
A
TC=80°C, tp=1ms
110
A
Ptot
Power Dissipation Per IGBT
360
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
90
A
TC=80°C
60
A
90
A
AC, t=1min
Free-Wheeling Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
430
A
Forward Current
TJ=45°C, t=8.3ms, Sine
450
A
MIMMG50J120U ELECTRICAL CHARACTERISTICS Symbol
Parameter
TC=25°C unless otherwise specified Test Conditions
Min.
Typ.
Max.
Unit
5
6.2
7
V
IGBT VGE(th) VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2mA
Collector - Emitter
IC=50A, VGE=15V, TJ=25°C
1.8
V
Saturation Voltage
IC=50A, VGE=15V, TJ=125°C
2.0
V
VCE=1200V, VGE=0V, TJ=25°C
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=600V, IC=50A, VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
0.5
VCE=1200V, VGE=0V, TJ=125°C
2 -200
mA mA
200
nA
611
nC
4.29
nF
0.30
nF
0.20
nF
VCC=600V, IC=50A
270
ns
Rise Time
RG =18Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=25°C
480
ns
tf
Fall Time
Inductive Load
60
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=50A
290
ns
tr
Rise Time
RG =18Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=125°C
550
ns
tf
Fall Time
Inductive Load
65
ns
Eon
Turn - on Switching Energy
TJ=25°C
6.0
mJ
RG =18Ω
TJ=125°C
8.4
mJ
Eoff
Turn - off Switching Energy
VGE=±15V
TJ=25°C
3.7
mJ
Inductive Load
TJ=125°C
5.8
mJ
VCE=25V, VGE=0V, f =1MHz
VCC=600V, IC=50A
Free-Wheeling Diode IF=50A, VGE=0V, TJ=25°C
1.9
2.3
V
IF=50A, VGE=0V, TJ=125°C
1.7
2.1
V
Reverse Recovery Time
IF=50A, VR=800V
180
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
60
A
Qrr
Reverse Recovery Charge
TJ=125°C
7.1
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.35
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.65
K /W
Torque
Module-to-Sink
Recommended（M4）
0.7
1.1
N· m
Torque
Module Electrodes
Recommended（M4）
0.7
1.4
N· m
Weight
27
g
MIMMG50J120U 100
100
80
80 TJ =25°C
VCE=20V
TJ =125°C
60
IC (A)
IC (A)
60 40
40 TJ =125°C
20
20
TJ =25°C
0 0
0
1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5
1
VCC=600V RG=18ohm VGE=±15V TJ =125°C
12
30 Eon
20 10 0 0
4
6 8 10 12 14 VGE（V） Figure2. Typical Transfer characteristics
Eon
9 6
Eoff
3
Eoff
25
VCC=600V IC=50A VGE=±15V TJ =125°C
15
Eon Eoff (mJ)
Eon Eoff (mJ)
40
2
18
60 50
0
0
70 30 40 50 60 RG（ohm） Figure4. Switching Energy vs. Gate Resistor
75 100 125 150 175 IC（A） Figure3. Switching Energy vs. Collector Current 50
103
0
10
20
103 td(off) td(off)
102
td(on)
t (ns)
t (ns)
td(on)
tf
102 tf tr
tr
10 0
VCC=600V RG=18ohm VGE=±15V TJ =125°C
20
60 80 100 120 140 IC（A） Figure5. Switching Times vs. Collector Current 40
10
VCC=600V IC=50A VGE=±15V TJ =125°C
70 30 40 50 60 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0
10
20
MIMMG50J120U 10
25 20
VCC=600V IC=50A TJ =25°C
Cies
C (nF)
VGE (V)
15 10
VGE =0V f=1MHz
1 Coes Cres
5 0.1
0.2 0.4 0.3 0.5 Qg（µC） Figure7. Gate Charge characteristics 0.1
0
200
1000
160
800
120
600
80 40 0 0
0
20
25
30
35
400 600 800 1000 1200 1400 VCE（V） Figure10. Short Circuit Safe Operating Area
600 800 1000 1200 1400 VCE（V） Figure9. Reverse Biased Safe Operating Area 400
0
200
150 TJ =150°C VGE ≥15V
80
125 100
60 IF (A)
IC(A)
TJ =125°C
40
75 50 TJ =25°C
20 0 0
15
TJ =150°C TC =25°C VGE =15V tsc≤10µs
200
100
10
400
TJ =150°C TC =25°C VGE =15V
200
5
VCE（V） Figure8. Typical Capacitances vs. VCE
ICsc (A)
ICpuls (A)
0 0
25
50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5
1.0
MIMMG50J120U 1
1
-1
-1
10
10-2
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-3
-4
10
ZthJC (K/W)
ZthJC (K/W)
10
10-2
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-3
10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT
10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode
Dimensions in mm Figure15. Package Outlines
