Transcript
MIMMK110A160B
1600V 110A thyristor Module RoHS Compliant
Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM
TC=25°C unless otherwise specified
Value
Unit
1600
V
IT(AV)
TC=85 , 180° conduction, half sine wave;
110
A
IT(RMS)
as AC switch;
235
A
TJ=45 , t=10ms (50Hz), sine, VR=0;
1785
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
1870
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
1500
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
1570 16
ITSM
TJ=45 , t=10ms (50Hz), sine, VR=0; I2t
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
A
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
17.5 11.2
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
12.3
IDRM/IRRM
TJ=130 , VD=VR=1600V, gate open circuit;
20
mA
dV/dt
TJ =130 , exponential to 67% rated VDRM
500
V/us
VISOL
50Hz, all terminals shorted, t=1s, IISOL≤1mA ;
3500
V~
TJ
Max. junction operating temperature range
-40～130
TSTG
Max. storage temperature range
-40～150
K A2s
MIMMK110A160B ELECTRICAL CHARACTERISTICS Symbol Test Condition
TC=25°C unless otherwise specified
Min. Typ. Max.
Unit
16.7% x p x IAV < I < p x IAV,TJ =130°C;
0.80
V
I > p x IAV , TJ =130°C;
0.85
V
16.7% x p x IAV < I < p x IAV,TJ =130°C;
2.37
mΩ
I > p x IAV , TJ =130°C;
2.25
mΩ
IH
VAK= 6V, resistive load;
250
mA
IL
Anode supply =6V, resistive load=1Ω,
400
mA
VTO rt
gate pulse =10V, 100us; VTM
ITM=345A, td=10 ms, half sine
PGM
tp≤5ms, TJ=125°C;
12
W
PGM(AV)
f=50Hz, TJ =125°C;
3
W
3
A
10
V
IGM -VGT
1.64
V
tp≤5ms, TJ =125°C; VA=6V, RA=1Ω, TJ =-40°C;
VGT
IGT VGD IGD di/dt
4
VA=6V, RA=1Ω;
2.5
VA=6V, RA=1Ω, TJ=125°C;
1.7
VA=6V, RA=1Ω, TJ=-40°C;
270
VA=6V, RA=1Ω;
150
VA=6V, RA=1Ω, TJ=125°C;
80
VAK=VDRM, TJ=125
V
mA
0.25
V
6
mA
150
A/us
TJ= 25 , VD=0.67VDRM, ITM =345A, Ig = 500mA, tr< 0.5 µs, tp > 6 µs
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition
TC=25°C unless otherwise specified
value
Unit
Rthjc
DC operation,per junction;
0.30
K/W
RTHCS
Mounting surface smooth,flat and greased,per junction
0.1
K/W
Md Weight
Mounting torque(M5) Terminal connection torque(M5) Typical value
3 to 5
N·m
105
g
MIMMK110A160B Characteristic curves 130 RTHJC(DC)=0.30 K/W 120 110 Conduction angle
100 90
30○
80
60○
90○
120○
70 0
Maximun allowable case tem (℃)
Maximun allowable case tem (℃)
130
180○
120 110 100
Conduction period
90 30○
80 70 60
120
40 80 Average forward current(A)
RTHJC(DC)=0.30 K/W
0
180○ 120○ 90○ 60○ 30○ RMS limit
100 80 60 40
Conduction angle
20
Per junction TJ=130℃
0
0
40 80 Average on-state current(A)
Maximun average on-state power loss (W)
Maximun average on-state power loss (W)
160
120
120
200
180
160 140 120
100 RMS limit 80
Conduction period
60 40
Per junction TJ=130℃
20 0
0
1500
At any rated load condition and with rated VRRM applied following surge
1300
Initial TJ=130℃ @60Hz 0.0083 s @50Hz 0.01 s
1100
Per junction
700 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current
20 40 60 80 100 120 140 160 180 Average on-state current(A)
Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
60 120 Average on-state current (A)
DC 180○ 120○ 90○ 60○ 30○
180
Figure 3. on-state power loss characteristics
900
DC
Figure 2. current rating characteristics
Figure 1. current rating characteristics
140
60○ 90○ 120 ○ 180○
1800 1600
Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial T = 130℃ J
no voltage reapplied rated VRRM reapplied
1400 1200 1000 800 600 0.01
Per junction 0.1 Pulse Train Duration (s)
1
Figure 6. Maximum Non-Repetitive Surge Current
MIMMK110A160B 350 Maximum Total On-state Power Loss (W)
Maximum Total On-state Power Loss (W)
350 180○ 120○ 90○ 60○ 30○
300 250 200 Conduction angle
150 100
Per module TJ=125℃
50 0
0
40 80 120 200 160 Total RMS Output Current (A)
240
300
Per junction 1
1K/W 2K/W
100 50 0
60 0 20 40 80 100 120 140 Maximum Allowable Ambient Temperature (℃)
1
Steady State Value: RTHJC=0.30K/W (DC Operation)
0.1
100 Rectangular gate pulse
0.1 0.01 1 Square Wave Pulse Duration (s)
(1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms
a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5μs, tp≥6μs b)Recommended load line for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃
(4)
VGD
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.01
On-State Power Loss Characteristics-2
0.1
10
Figure.10 Thermal Impedance ZthJC Characteristics
Figure.9 On State Voltage Drop Characteristics
0.1 0.001
0.7K/W
150
0.01 0.001
2
3 Instantaneous On-state Voltage (V)
1
0.4K/W
200
Transient Thermal Impedance ZthJC(K/W)
TJ=130℃ 10
Instantaneous Gate Voltage (V)
Instantaneous On-state Current (A)
TJ=25℃
10
0.3K/W
Figure.8
100
1
0.2K/W
250
Figure 7. On-State Power Loss Characteristics-1 1000
0
RTHSA=0.1K/W-Delta R
1
Instantaneous Gate Current (A) Figure.11 Gate Characteristics
10
100
1000
MMK110A160B Package Outline (Dimensions in mm)
5/5
