Transcript
MIMMK75T160UX
1600V 75A thyristor Module RoHS Compliant
Features · Isolated Module Package · Isolation voltage 3000 V · Three Phase Bridge and a Thyristor
Applications · Current Stabilized Power Supply · Switching Power Supply · Inverter For AC or DC Motor Control
■ Diode ABSOLUTE MAXIMUM RATINGS Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Max.
Unit
1600
V
75
A
VRRM
Repetitive Reverse Voltage
ID(AV)
Average Forward Current
TC=90°C, moudle
Non-Repetitive Surge
TJ=45°C, t=10ms, 50Hz, Sine
1050
A
Forward Current
TJ=45°C,t=8.3ms, 60Hz, Sine
1150
A
TJ=45°C, t=10ms, 50Hz, Sine
5512
A2s
TJ=45°C,t=8.3ms, 60Hz, Sine
6612
A2s
IFSM I2 t
I2t (For Fusing)
TJ
Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
332
g
AC, 50Hz, t=1min
Weight
ELECTRICAL AND THERMAL CHARACTERISTICS Symbol
Parameter
IRM
Reverse Leakage Current
VF
Forward Voltage
RθJC RθCS
Test Conditions
TC=25°C unless otherwise specified Min.
Typ.
Max.
Unit
VR=1600V
--
--
500
µA
VR=1600V, TJ=125°C
--
--
5
mA
IF=75A
--
1.05
--
V
--
1.0
--
V
IF=75A,
TJ=125°C
Thermal Resistance
per diode
--
--
0.84
°C /W
Junction-to-Case
per module
--
--
0.14
°C /W
Thermal Resistance
per diode
--
--
0.42
°C /W
Case -to-Sink
per module
--
--
0.07
°C /W
MIMMK75T160UX ■ Thyristor ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM
TC=25°C unless otherwise specified
Value
Unit
1600
V
75
A
IT(AV)
TC=90 , 180° conduction, half sine wave;
ITSM
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
1250
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
1350
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
7812
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
9112
A2s
dV/dt
TJ =125 , exponential to 67% rated VDRM
1000
V/us
dI/dt
TJ =125 , ITM=500A rated VDRM
150
A/us
VISOL
50Hz, all terminals shorted, t=1s, IISOL≤1mA ;
3000
V~
TJ
Max. junction operating temperature range
-40～125
TSTG
Max. storage temperature range
I2 t
-40～125
℃
Mounting torque(M6)
3 to 5
N·m
Terminal connection torque(M6)
3 to 5
N·m
Terminal connection torque(M4)
1 to 2
N·m
ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Test Condition IDRM/IRRM VTM
TJ=125 , VD=VR=1600V; ITM=280A, td=10 ms, half sine; VA=6V, RA=1Ω, Tj=-40°C;
VGT
A
TC=25°C unless otherwise specified
Min. Typ. Max. Unit 20
mA V
1.50 4
V
VA=6V, RA=1Ω;
2.5
VA=6V, RA=1Ω, Tj=125°C;
1.7
VA=6V, RA=1Ω, Tj=-40°C;
200
VA=6V, RA=1Ω;
100
VA=6V, RA=1Ω, Tj=125°C;
80
PGM
tp≤5ms, Tj=125°C;
12
W
PGM(AV)
f=50Hz, Tj=125°C;
3
W
Rthjc
Thermal Resistance , Junction-to-Case
0.25
K/W
RTHCS
Thermal Resistance, Case -to-Sink
0.09
K/W
IGT
mA
MIMMK75T160UX Characteristic curves 1
160
-1
10 TJ =125°C
120
ZthJC (K/W)
Forward Current IF (A)
200
80
0
10-3
TJ =25°C
40
0
0.3
0.6
1.5
1.2
0.9
Duty Duty 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 Single Single Pulse Pulse
10-2
10-4 -4 10
1.8
Forward Voltage Drop VF（V）
125
125
1
RTHSA=0.02K/W-Delta R 0.04K/W
100 Output Current (A)
100 75 50
0.06K/W 0.08K/W
75
0.1K/W 0.16K/W 0.2K/W
50 25
25 0 0
25
70
50
100
125
0
150
0
25
Output Current (A)
50
75
100
125
150
Case Temperature (°C)
Figure 3. SCR Output Current vs Power Dissipation
Figure 4. SCR Output Current vs Case Temperature 1
TJ =125°C
100
Transient Thermal Impedance ZthJC
1000 Instantaneous On-state Current (A)
10-1
Figure 2. Diode Thermal Impedance ZthJC
150
TJ=25℃ TJ=125℃
10 TJ =25°C
Per junction 1
10-2
Rectangular Pulse Duration (seconds)
Figure1. Diode Forward Voltage Drop vs Forward Current
Power Dissipation (W)
10-3
0
0.5
1
1.5
2
2.5
3
3.5
0.1 Steady State Value (DC Operation) 0.01
0.001 0.001
0.01
0.1
1
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Figure 5. SCR On State Voltage Drop
Figure 6. SCR Thermal Impedance ZthJC
10
MIMMK75T160UX
Instantaneous Gate Voltage (V)
100 Rectangular gate pulse
(1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms
a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line for 10 ≤30% rated di/dt:15V, 40Ω (a) tr =1s, tp ≥6 s (b) TJ=-40℃ TJ=25℃ TJ=125℃
1
(4)
VGD
0.1 0.001
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.01
(3)
0.1
1
Instantaneous Gate Current (A) Figure 7. Gate Characteristics
Package Outline (Dimensions in mm)
10
100
1000
