Transcript
MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
COLLECTOR 3
Site and Control Change Requirements
1 BASE
MAXIMUM RATINGS Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
ICM
900
mAdc
Symbol
Max
Unit
225 1.8
mW mW/°C
556
°C/W
300 2.4
mW mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous Collector Current − Peak
2 EMITTER
3 1
SOT−23 (TO−236) CASE 318 STYLE 6
2
THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature
PD
RqJA PD
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
2X M G G 1 2X = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Package
Shipping†
MMBT4401LT1G SMMBT4401LT1G
SOT−23 (Pb−Free)
3000 / Tape & Reel
MMBT4401LT3G
SOT−23 (Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 10
1
Publication Order Number: MMBT4401LT1/D
MMBT4401L, SMMBT4401L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
mAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
mAdc
20 40 80 100 40
− − − 300 −
−
− −
0.4 0.75
0.75 −
0.95 1.2
ON CHARACTERISTICS (Note 3) DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
(VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
ns
ns
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V
+30 V +16 V 0 -2.0 V
1.0 to 100 ms, DUTY CYCLE ≈ 2.0%
200 W
+16 V
1.0 to 100 ms, DUTY CYCLE ≈ 2.0%
200 W
0 1.0 kW < 2.0 ns
1.0 kW
-14 V
CS* < 10 pF
< 20 ns
-4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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CS* < 10 pF
MMBT4401L, SMMBT4401L TRANSIENT CHARACTERISTICS 25°C 10 7.0 5.0
100°C
VCC = 30 V IC/IB = 10
Q, CHARGE (nC)
3.0 QT
2.0 1.0 0.7 0.5 0.3 0.2
QA
0.1 10
20
200 50 70 100 30 IC, COLLECTOR CURRENT (mA)
300
500
Figure 3. Charge Data
100
100 IC/IB = 10
70
VCC = 30 V IC/IB = 10
70 tr 50
tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0
30 20
t, TIME (ns)
t, TIME (ns)
50
20
10
10
7.0
7.0 5.0
5.0 10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn−On Time
Figure 5. Rise and Fall Times
300
300
500
100 ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20
VCC = 30 V IB1 = IB2
70 50 t f , FALL TIME (ns)
200 t s′, STORAGE TIME (ns)
tf
30
100 70
IC/IB = 20
30 20
IC/IB = 10
10
50
7.0 30
5.0 10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
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300
500
MMBT4401L, SMMBT4401L SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10
10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW
8.0 NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE
6.0
4.0
2.0
IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA
6.0
4.0
2.0
0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz)
0 10
20
50
100
50
100 200
Figure 8. Frequency Effects
500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 9. Source Resistance Effects
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.
hie , INPUT IMPEDANCE (OHMS)
50k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
20k 10k 5.0k
2.0k 1.0k 500
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Impedance 100
7.0 5.0
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
10
MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20 10
2.0 1.0 0.1
5.0 7.0 10
MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Voltage Feedback Ratio
Figure 12. Output Admittance http://onsemi.com 4
5.0 7.0 10
MMBT4401L, SMMBT4401L STATIC CHARACTERISTICS 500 450 h FE, DC CURRENT GAIN
400
VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V
TJ = 150°C
350 300
25°C
250 200
-55°C
150 100 50 0 1
0.1 IC, COLLECTOR CURRENT (A)
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.2 1.0 0.8 IC = 1.0 mA
100 mA
10 mA
300 mA
500 mA
0.6 0.4 0.2 0
0.001
0.01
0.1
1
100
10
IB, BASE CURRENT (mA)
0.35
+0.5 IC/IB = 10
0.30
0 COEFFICIENT (mV/ °C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 14. Collector Saturation Region
0.25 150°C 0.20 25°C
0.15 0.10
-55°C
0 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A)
-0.5 -1.0 -1.5 -2.0
0.05 0.0001
qVC for VCE(sat)
-2.5 0.1 0.2
1
Figure 15. Collector−Emitter Saturation Voltage vs. Collector Current
qVB for VBE 0.5
50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
Figure 16. Temperature Coefficients
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500
MMBT4401L, SMMBT4401L STATIC CHARACTERISTICS 1.0
IC/IB = 10
1.0
VBE(on), BASE−EMITTER TURN ON VOLTAGE (V)
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
1.1
0.9 −55°C
0.8 0.7
25°C
0.6 0.5
150°C
0.4 0.3
0.0001
0.001
0.01
0.1
VCE = 2.0 V
0.9
−55°C
0.8 0.7
25°C 0.6 0.5 0.4 0.3
1
150°C 0.0001
IC, COLLECTOR CURRENT (A)
1
8.5 Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
0.1
Figure 18. Base−Emitter Turn On Voltage vs. Collector Current
21 19 17 15 13 11
0
1
2
3
4
5
7.5 6.5 5.5 4.5 3.5 2.5 1.5
6
0
5
Veb, EMITTER BASE VOLTAGE (V)
fT, CURRENT−GAIN−BANDWIDTH (MHz)
10 msec 1 sec
0.01
0.001
1
15
20
25
30
35
40
45
50
Figure 20. Output Capacitance vs. Collector Base Voltage
1
0.1
10
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base Voltage
IC, COLLECTOR CURRENT (A)
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. Base−Emitter Saturation Voltage vs. Collector Current
9
0.001
10
100
1000 VCE = 1.0 V TA = 25°C
100
10 0.1
1
10
100
1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 21. Safe Operating Area
Figure 22. Current−Gain−Bandwidth Product
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MMBT4401L, SMMBT4401L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3
HE
E
c 1
2
e
b
0.25 q
A L
A1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0° −−− 10 ° 0° −−− 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
L1 VIEW C
SOLDERING FOOTPRINT* 0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 SCALE 10:1
0.8 0.031
mm Ǔ ǒinches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT4401LT1/D
