Transcript
Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS
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Product Overview Features
Benefits
• Essentially no switching losses
• High voltage 1200V isolation in a small package outline
• Higher efficiency
• Reduction of heat sink requirements
• High current 5A • High temperature 210°C
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• BeO free and RoHS compliant
• HMP solder tinned leads available • Electrically isolated flange
Applications
• Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time • Screening options available
Figure 1: TO-257 Domed Lid
• Harsh environment motor drive • Harsh environment regulators
Case
ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other packaging options available
Pin1 Pin2 Pin3 Figure 2: Circuit Diagram
Absolute Maximum Ratings Symbols
Values
Units
DC Reverse Voltage
1200
Volts
VRRM
Repetitive Peak Reverse Voltage
1200
Volts
IF(AVG)
Average Forward Current (no AC component)
5
Amps
IFRM
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
37.5
Amps
IFSM
Surge Peak Forward Current ( Tp=10ms, Half Sine Wave )
64
Amps
PD
Total Power Dissipation
13.1
Watts
TJ
Junction Temperature Range
-55 to +210
o
Tstg
Storage Temperature Range
-55 to +210
o
Values
Units
VR
Parameters
C C
Thermal Properties Symbols RθJC
March 2014 Rev 1.0
Parameters Thermal Resistance, Junction To Case
14.1
o
C / Watt
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 •
[email protected] • www.micross.com
Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS
Electrical Characteristics Symbols VF
Parameters Forward Voltage
IR
Reverse Current
Qc
Total Capacitive Charge
C
Total Capacitance
Test Conditions
Typ
Max
IF = 5A, TJ = 25oC
1.4
1.9
IF = 5A, TJ = 210oC
2.0
2.5
VR = 1200V, TJ = 25oC
35
200
VR = 1200V, TJ = 210oC
140
1000
VR = 1200V, TJ = 25oC, IF = 5 A, di/dt = 200 A/μs
49
VR = 0V, TJ = 25oC, f= 1MHz
560
VR = 400V, TJ = 25oC, f= 1MHz
37
VR = 800V, TJ = 25oC, f= 1MHz
27
Units Volts
μAmps
nC
pF
yywwa = Date code and batch yy = year ww = week a = batch
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 •
[email protected] • www.micross.com
Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS * Absolute Maximum Ratings Disclaimer
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Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life.
Document Title
Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS
Revision History Revision #
History
1.0
Initial release
March 2014 Rev 1.0
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Release Date March 2014
Status Preliminary
3
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 •
[email protected] • www.micross.com
