Transcript
I n t e r f a c e
y o u .
M.2 NGFF
SATA 3Gbps M.2
SNG4A Series
New-generation Form Factor M.2 with Embedded SSD SSDs are generally used for server storage with ICT information devices and communications infrastructure equipment, which sustain LTE high-speed data transmission in smartphones and tablet PCs. Conventionally, they have mostly been used for terminal storage with IO parallelization and allocated storage for improving factors such as fast responsiveness and data reliability, but they are recently being used more for online and nearline storage. Furthermore, SSDs are mounted in smartphones and tablet PCs and make highspeed activation and saving battery life possible. Therefore, SSDs that are easy to embed as well as compatible with a wide variety of system interfaces are starting to appear as they become more compact, thinner, and lightweight. Among these SSDs, the one that looks promising as a new-generation form factor (Next Generation Form Factor) of SSDs is this M.2 SSD that has been recently developed.
01
SMD Pulse Transformer for Ethernet Applications
A Compact and Thin Type that Can Extend to a Wide Variety of Interfaces M.2 is a new serial ATA SSD specification developed by the Serial ATA International Organization (SATA-IO). It is about 55 percent less in size and thickness than existing mSATA SSD specifications (with type 2242-D2: Fig. 1). Furthermore, embedding in various devices is made easy as it can be extended to a wide variety of interfaces such as SATA, PCI Express, USB, SD, Display Port, I2C, and UART (Fig. 2).
□ Fig. 1 mSATA, M.2 Size Comparison
29.85±0.15
42.00
50.80±0.15
22.00
mSATA 51×30×4.85 mm
M.2 (Type 2242-D2-B-M) 42×22×3.5 mm
□ Fig. 2 M.2 Compatible Interfaces (the SNG4A series is compatible with Key IDs B and M) Key ID A B C D E F G H J K L M
Pin Location 8-15 12-19 16-23 20-27 24-31 28-35 39-46 43-50 47-54 51-58 55-62 59-66
Key Definition Connectivity Version A-SD WWAN / SSD / Others / Primary key Not Assigned Not Assigned Connectivity Version A-SD Not Assigned Future Memory Interface Not Assigned Not Assigned Not Assigned H S I Key for WWAN Solutions SSD 4 Lane PCle
02
SMD Pulse Transformer for Ethernet Applications
For SSD Data Reliability and Endurance SSDs used in ICT information devices and infrastructure equipment require high levels of data reliability. However, the processes in NAND type flash memories mounted in SSDs are drastically miniaturized and data reliability is decreased consequently (Fig. 3). For example, the required ECC with the MLC 5xn generation was 8bit/1KByte, but is 30bit/1KByte with the 2xn generation and 40bit/1KByte with the 1xn generation. Endurance(P/E Cycles) has also dropped from 10k times to 3k times per block. That is why TDK has newly developed the SSD controller GBDriver RS4 (Photo 1). HW (hardware) and FW (firmware) specifications have been optimized so that later flash memories can be handled more easily.
□ Fig. 3 NAND Type Flash Memory: Rewrite Cycles by Process and Required ECC Times
40
100,000
bit
8
SLC
24 10,000
SLC MLC
16
Required ECC
P/E Endurance
32
0
1,000 Process Rule Year
9xn 2006
7xn 2007
6xn 2008
5xn
4xn
2009
2010
3xn 2011
2xn
1xn
1yn
2012
2013
2014
MLC
□ Photo 1 SSD Controller GBDriver RS4
2.5inch SATA Interface
I/O voltage
Flash Memory 3.0Gbps or 1.5Gbps
GBDriver RS4
Flash Memory Flash Memory Flash Memory
Clock
03
I/O voltage
Regulator Core voltage
VCC(+5V)
RESET
SMD Pulse Transformer for Ethernet Applications
TDK M.2 SNG4A Series High-reliability Function: Enhanced ECC The error correction capability has been significantly enhanced with the TDK M.2 SNG4A series that has been developed. It has 71bit/1KByte (BCH) mounted on it and offers the highest level of data reliability in the world. It also includes an enhanced ECC function as an option for during MLC flash use and allows 71bit/512Byte error corrections.
□ Fig. 4 Comparison between a Standard ECC (error correction) Function and Enhanced ECC (image) [Standard ECC] Only redundant areas are used for standard ECC. [Redundant Area] HOST
SNG4A Series Write
Read
[Data Area]
G B D r i ve r RS 4
NAND Type Flash Memory 1KByte 71bit ECC
[Enhanced ECC] Some of the data area is used for enhanced ECC operations. [Redundant Area] HOST
SNG4A Series Write
Read
[Data Area]
G B D r i ve r RS 4
NAND Type Flash Memory 512Byte
512Byte
71bit ECC 71bit ECC
[Some of the Data Area]
04
SMD Pulse Transformer for Ethernet Applications
TDK M.2 SNG4A Series High-reliability Function: Read Retry Function The enhanced ECC function is a powerful error correction function, but there is the danger of bit errors accumulating and exceeding the ECC capabilities if only ECC is depended on. That is why the SNG4A series is equipped with a read retry function. This is a function that reads out correct data when a bit error is detected by executing a read with a new voltage threshold parameter.
Potential variation in the floating gate Read out and change the voltage Bit error occurrence
1. ECC error occurrence
2. Read out and change the voltage - Retry 3. No ECC errors - OK
TDK M.2 SNG4A Series High-reliability Function: Auto Refresh Function While reading data out, the enhanced ECC and read retry function both correct errors or read data out again. However, bit errors still remain in the actual memory. The auto refresh function is a function that automatically refreshes internal data when there is no system access, and recovers the correct data. Block 0
Regularall-block read & ECC check
Detection of correctable bit error
Block xxx
Error correction & bit error restored
It periodically checks the data in all areas. It also recovers data and prevents errors from accumulating to be uncorrectable error (ECC error).
05
SMD Pulse Transformer for Ethernet Applications
TDK M.2 SNG4A Series High-reliability Function: Data Randomizer It is mounted with a data randomizer function that randomizes data patterns and enters the data to prevent data errors when writing data. It provides data reliability that is not dependent on ECC. 【Actual write status in NAND (Ex.)】
【Data to be written】
0 1 0 0 1 0
0 0 0 0 0 0
Read operation :
0 0 0 0 0 0
Randomized data is decoded and read
0 1 0 0 1 0
0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1
1 0 1 1 0 1
1 1 0 1 0 0
Write operation : Data is randomized and written
0 0 1 0 1 0 1 0 1 0 0 1
1 1 1 1 1 1
□ Fig.5 Comparison of Read Error Occurrences with the Data Randomizer Function ON/OFF 16KB/Page Multi-Level Cell NAND (1xnm) READ Count 50
Bit Error/1KByte
40
To 500,000 times To 1,000,000 times To 2,000,000 times To 5,000,000 times To 10,000,000 times To 2.00
To 1,000 times
Required ECC 40bit/1KByte
ECC Error
30
20
Red line: Randomizer OFF Blue line: Randomizer ON
Test 1: PROGRAM/ERASE are executed (1) 1 time, (2) 1,000 times, (3) 2,000 times, and (4) 3,000 times in all areas of the flash memory. The flash memory in (1) to (4) is read 1,000 times each and the error bit count is checked with an ECC. Test 2: The flash memory in TEST 1 (4) continues to be read after 1,000 times, and the error bit count is checked until the reading reaches 10 million times.
10
0 1
1,000
2,000
3,000
PROGRAM／ERASE Count In particular, the data randomizer function drastically improves the data reliability in flash memory that is reaching the end of its lifespan.
06
SMD Pulse Transformer for Ethernet Applications
TDK M.2 SNG4A Series Life Performance: NCQ+ATA Trim Function “NCQ” stands for “Native Command Queuing”, and is a form of technology for increasing SSD speed. By incorporating NCQ, multiple commands can consecutively be accepted and executed, and the orders of executed commands can concurrently be switched, thus reducing program/erase cycles. Furthermore, ATA Trim compatibility allows the batch data wiping of deleted files and trash bin data. SSD life can be extended as free space is increased.
□ Fig.6 NCQ/Trim conceptual diagram
ON time
OFF time
２
２
４
OFF time
1
５
1
２
0
1
2
3
4
5
6
7
8
9 10 11
３ 12 13 14 15 16 17 ４ 18 19
６
５ 20 21 22 23 24
３
3
ON time
６ 25 26 27 28
07
1
２ ３ ４ ５ ６
1
4 5
6
SMD Pulse Transformer for Ethernet Applications
TDK M.2 SNG4A Series Endurance: TDK Smart Swap With TDK’s advanced global static wear leveling algorithm “TDK Smart Swap” rewriting is allocated in fixed areas such as OS. SSD life is significantly improved because the flash memory life is maximized. That is why ten years of use is possible with the SNG4A series even if program/erase occurs at 2.5 times per second at, for example, 8GB.
□ Fig.7 Conceptual Diagram of Global Static Wear Leveling (“TDK Smart Swap”)
Log area
Read-only area
OS
Unused
Dynamic wear leveling
Dynamic wear leveling is implemented in areas where there are minor differences in inter-physical memory program/erase counts.
Static wear leveling is implemented in areas where there are major differences in program/erase counts.
* Custom settings not applicable to Swap specifications can also be made (in the LBA). For example, unnecessary transfers between OSs can be avoided when used together with the Windows 8 Embedded EWF function.
Static wear leveling（Smart Swap） Log area
Read-only area
Unused
□ Fig.8 Advantages of the TDK Smart Swap TDK Smart Swap
Block2047
WITHOUT TDK Smart Swap
Block1023
Block0
0
1,000
2,000
3,000
4,000
5,000
6,000
7,000
8,000
9,000
10,000
11,000
Program/erase is focused in a specified block without Smart Swap (red). With Smart Swap (blue), even if the red-colored parts reach 10k, they stop at 1 to 2k.
□ Fig. 9 Expected Endurance
Data Capacity
Part.No.
Expected program/erase cycles
（Unit: Million times）
Allowable accesses per second according to age of equipment
（When operating 24 hrs/d,365 ds/yr）
1年
5年
10年
8GB
SNG4A08GXBBCS-SSA
788
24.99
5.00
2.50
16GB
SNG4A16GXDBCS-SSA
1,576
49.97
9.99
5.00
32GB
SNG4A32GXDBCS-SSA
3,152
99.95
19.99
9.99
64GB
SNG4A64GXDBCS-SSA
6,304
199.90
39.98
19.99
08
SMD Pulse Transformer for Ethernet Applications
□ Main Features 1 Employed TDK SSD Controller GBDriver ® RS4.
(Designed by us and domestically-manufactured)
2 Employed8KB/page SLC NAND type flash memory. (High-speed, high-durability,
and domestically-manufactured.)
3 Compatible with Serial ATA Standard Rev.2.6 (Gen 1:1.5Gbps/Gen 2: 3.0Gbps). 4 Equipped with 71bit/1KByte ECC (BCH). In enhanced ECC mode, 71bit/512Byte ECC (BCH). 5 Reinforced power fail tolerance. (Equipped with rewinding function) 6 Equipped with TDK global Static Wear leveling function. (TDK SMART SWAP) 7 Equipped with data randomizer function and auto refresh function. 8 Compatible with NCQ (Native Command Queuing) 9 Compatible with ATA Trim 10 Equipped with AES 128bit (Advanced Encryption Standard) encryption function (CBC mode) 11 SSD life monitor software (TDK SMART) is included. 12 Optional functions 13 Solution support
□ Shapes / Dimensions
Form factor
M.2 Type 2242-D2-B-M(8GB~32GB) M.2 Type 2242-D5-B-M(64GB)
Memory type
SLC(single level cell) NAND type flash memory (8KByte/Page)
Controller
TDK GBDriver RS4
Interface
Serial ATA Revision 2.6
Transfer mode
SATA Gen1: 1.5Gbps, Gen2: 3.0Gbps
Transfer speed*
Read (max.)
215MByte/sec
Write (max.)
95MByte/sec
Error check and correction (ECC)
71bit/1KByte
Endurance
Effective blocks×100,000 times (e.g. 64GB SSD : 6.3 billion times)
Ambient operating temperature
0 to +70°C [–40 to +85°C Industrial Option]
Ambient storage temperature
–25 to +85°C [–40 to +85°C Industrial Option]
Operating/storage humidity
0 to 90(%)RH [Non condensation]
Power supply voltage
3.3V±5%
Conformed standards
CE/FCC/VCCI
Environmental specifications
RoHS compliant
Φ６ GND PAD
FULL R
2 x R0.50
PIN2
PIN1
PIN75 1.20
1.20 1.35MAX.
42.00
8GB/16GB/32GB/64GB
1.00
SNG4A series
Data capacity
D2
PIN74
1.50MAX.
D5
2.50
Model
22.00
Φ5.50 GND PAD
Φ3.50
4.00
Serial ATA 3Gbps M.2 Type SSD RS4 series
2.00
Series
3.50
□ Specifications
5,625
6.125 18.50
1.35MAX.
1.50MAX.
19.85
* In 4ch mode, measured by CrystalDiskMark 3.0. The speed may vary depending on the actual use environment/conditions.
Dimensions in mm
0.80
0.80
2015.08.10
09
