Transcript
NGTB40N120L3WG IGBT - Field Stop III This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop III Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
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Features
• • • • •
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat These are Pb−Free Devices
40 A, 1200 V VCEsat = 1.55 V Eoff = 1.5 mJ C
Typical Applications
• Motor Drive Inverter • Industrial Switching • Welding
G
ABSOLUTE MAXIMUM RATINGS Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current @ TC = 25°C @ TC = 100°C
IC
Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C
E
A 160 40
ICM
160
A G
IF
A 160 40
Diode pulsed current, Tpulse limited by TJmax
IFM
160
A
Gate−emitter voltage Transient gate−emitter voltage (tpulse = 5 ms, D < 0.10)
VGE
±20 ±30
V
Power Dissipation @ TC = 25°C @ TC = 100°C
PD
C
TO−247 CASE 340AL
E
MARKING DIAGRAM
W 454 227
40N120L3 AYWWG
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″ from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
A Y WW G
= Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION Device NGTB40N120L3WG
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail (Pb−Free)
Publication Order Number: NGTB40N120L3W/D
NGTB40N120L3WG THERMAL CHARACTERISTICS Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.33
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.61
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
− −
1.55 2.0
1.8 −
V
STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate− emitter short−circuited
VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
− −
− 0.5
0.4
mA
Gate leakage current, collector−emitter short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
200
nA
Input capacitance
Cies
−
4912
−
pF
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
140
−
Cres
−
80
−
Qg
−
220
−
Qge
−
42
−
Qgc
−
110
−
td(on)
−
18
−
Gate−emitter threshold voltage
Reverse transfer capacitance Gate charge total Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time
tr
−
30
−
td(off)
−
150
−
tf
−
131
−
Eon
−
1.5
−
Eoff
−
1.5
−
Total switching loss
Ets
−
3.0
−
Turn−on delay time
td(on)
−
18
−
tr
−
31
−
td(off)
−
156
−
tf
−
220
−
Turn−off delay time Fall time Turn−on switching loss
TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V
Turn−off switching loss
Rise time Turn−off delay time Fall time Turn−on switching loss
TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V
ns
mJ
ns
mJ
Eon
−
2.0
−
Turn−off switching loss
Eoff
−
2.3
−
Total switching loss
Ets
−
4.3
−
VF
− −
3.0 2.8
3.4 −
V
trr
−
86
−
ns
Qrr
−
0.56
−
mc
Irrm
−
12
−
A
dIrrm/dt
−
−210
−
A/ms
DIODE CHARACTERISTICS Forward voltage
VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A TJ = 175°C
Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb
TJ = 25°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms
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NGTB40N120L3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
trr
−
136
−
ns
DIODE CHARACTERISTICS Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb
TJ = 125°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms
Qrr
−
1.47
−
mc
Irrm
−
20
−
A
dIrrm/dt
−
−212
−
A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB40N120L3WG TYPICAL CHARACTERISTICS 160
11 V
120 100 80
10 V
60 40
9V
20
7V
8V
0
160
1
2
3
5
4
6
7
120
11 V
100 10 V
80 60
9V 40 8V 7V
20 0
8
3
5
4
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
11 V
120 100 80
10 V
60 40
9V
20
7−8 V
0 1
2
3
5
4
6
7
VGE = 20 to 13 V
TJ = 175°C
140 120
11 V
100 10 V
80 60
9V
40 8V 20
7V
0 0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
160 140 120 100 80 60 40
TJ = 175°C
20 TJ = 25°C
0 2
4
6
8
8
160
VGE = 20 to 13 V
140
0
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = −55°C
0
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
140
0
0
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
TJ = 150°C
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
VGE = 20 to 13 V
TJ = 25°C
10
12
14
2.8 2.6
IC = 75 A
2.4 2.2 2.0
IC = 40 A
1.8 1.6
IC = 20 A
1.4 1.2 1.0 −75 −50 −25
0
25
50
75
100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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8
NGTB40N120L3WG TYPICAL CHARACTERISTICS 10,000
100 90
1000
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
Cies
TJ = 25°C
Coes 100 Cres
80
TJ = 175°C
70 TJ = 25°C
60 50 40 30 20 10
10
0 10
20
30
40
50
60
70
80
90
0
100
2.0
2.5
3.0
3.5
4.0
Figure 8. Diode Forward Characteristics
14
2.1
12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A
4 2 0
50
100
150
200
1.7
Eon
1.5 1.3 1.1 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W
0.9 0.7
0
250
40
60
80
100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature 6
SWITCHING LOSS (mJ)
tf td(off)
100
tr td(on)
10 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 20
20
QG, GATE CHARGE (nC)
1000
40
4.5
Eoff
1.9
0.5 0.3
0
SWITCHING TIME (ns)
1.5
Figure 7. Typical Capacitance 2.3
0
1.0
VF, FORWARD VOLTAGE (V)
16
1
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W
5
Eoff
4 Eon
3 2 1 0
60
80
100 120 140 160 180 200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. Temperature
Figure 12. Switching Loss vs. IC
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80
90
NGTB40N120L3WG TYPICAL CHARACTERISTICS 1000
9 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A
8 SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf td(off)
100
tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W
1 10
20
6 5 4 Eoff
3 2
0
30
40
50
60
70
80
90
0
20
10
30
40
50
70
60
IC, COLLECTOR CURRENT (A)
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG 3.5
td(off) SWITCHING LOSS (mJ)
3.0
tf td(on) tr
100
VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A
10 0
10
20
30
40
50
60
2.5 Eoff 2.0 1.5 Eon
VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C
1.0 0.5 0 350 400 450
70
500
550
600
650
700
750 800
Rg, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
1000
VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C
tf
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
Eon
1
1000
SWITCHING TIME (ns)
7
td(off) 100
tr td(on)
100 dc operation 10
50 ms 100 ms
Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature
1
1 ms
0.1
10 350 400 450
500
550
600
650
700
750
1
800
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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10,000
NGTB40N120L3WG TYPICAL CHARACTERISTICS 350 trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10 VGE = 15 V, TC = 175°C 1
TJ = 175°C, IF = 40 A 250 200 150 100
TJ = 25°C, IF = 40 A
50 0
1
10
100
1000
100
10,000
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
3.5 3.0
TJ = 175°C, IF = 40 A
2.5 2.0 1.5 TJ = 25°C, IF = 40 A
1.0 0.5
VR = 400 V
0 100
300
500
700
900
1100
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 175°C, IF = 40 A
40
30
20 TJ = 25°C, IF = 40 A 10 VR = 400 V
0 100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.5 4.0
IF = 75 A
3.5 IF = 40 A
3.0 2.5
IF = 20 A
2.0 1.5 1.0 −75 −50 −25
0
25
50
75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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1100
50
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V 300
1100
NGTB40N120L3WG TYPICAL CHARACTERISTICS 180 Ramp, TC = 110°C
160 140
Square, TC = 110°C
Ipk (A)
120 100
Ramp, TC = 80°C
Square, TC = 80°C
80 60 40 20 0 0.1
0.01
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1 RqJC = 0.33 50% Duty Cycle 0.1
20% 10% 5%
0.01
2%
Junction
R1
R2
Rn
Case
Ci = ti/Ri C1
0.001
C2
Cn
Ri (°C/W)
Ci (J/W)
0.0065 0.0811 0.0186 0.1007 0.1115 0.0172
0.0154 0.0039 0.0539 0.0314 0.0897 1.8437
Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001 0.000001
0.00001
0.0001
0.001
0.01
1
0.1
ON−PULSE WIDTH (s)
R(t), SQUARE−WAVE PEAK (°C/W)
Figure 25. IGBT Transient Thermal Impedance 1 RqJC = 0.61 50% Duty Cycle
20%
Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC
0.1 10% Junction
5%
R1
R2
Rn
C1
C2
Cn
Case
Ci = ti/Ri
2% Single Pulse
Ri (°C/W)
Ci (J/W)
0.011089 0.015127 0.015703 0.048571 0.057211 0.031254 0.026926 0.077082 0.140155 0.181237
0.000090 0.000661 0.002014 0.002059 0.005527 0.031996 0.117443 0.129731 0.225628 0.551763
0.01 0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 26. Diode Transient Thermal Impedance
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0.1
1
NGTB40N120L3WG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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NGTB40N120L3WG
Figure 29. Definition of Turn Off Waveform
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NGTB40N120L3WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE B
B
A
NOTE 4
E
SEATING PLANE
0.635
M
P
A Q
E2
D
S
NOTE 3 1
2
4
DIM A A1 b b2 b4 c D E E2 e L L1 P Q S
3
L1 NOTE 5
L
2X
b2
c b4 3X
e
A1 b 0.25
NOTE 7 M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
M
MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC
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NGTB40N120L3W/D
