Transcript
NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.
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15 A, 650 V VCEsat = 1.5 V
Features
• • • • •
Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications 5 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb−Free Device
C
Typical Applications
G
• White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control
E
ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C
Symbol
Value
Unit
VCES
650
V
IC
C
A 30 15
Pulsed collector current, Tpulse limited by TJmax
ICM
120
A
Gate−emitter voltage
VGE
$20
Power dissipation @ TC = 25°C @ TC = 100°C
PD
Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C
tSC
5
ms
Operating junction temperature range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8” from case for 5 seconds
TSLD
260
°C
V
G
C
TO−220 CASE 221A STYLE 9 E
MARKING DIAGRAM
W 117 47
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
G15N60S1G AYWW
A Y WW G
= Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 5
1
Device
Package
Shipping
NGTG15N60S1EG
TO−220 (Pb−Free)
50 Units / Rail
Publication Order Number: NGTG15N60S1E/D
NGTG15N60S1EG THERMAL CHARACTERISTICS Symbol
Value
Unit
Thermal resistance junction to case, for IGBT
Rating
RqJC
1.06
°C/W
Thermal resistance junction to ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C
VCEsat
1.3 1.55
1.5 1.75
1.7 1.95
V
VGE = VCE , IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
− −
10 −
− 200
mA
Gate leakage current, collector−emitter short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Forward Transconductance
VCE = 20 V, IC = 15 A
gfs
−
10.1
−
S
Cies
−
1950
−
Coes
−
70
−
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
td(off)
−
170
−
tf
−
140
−
Eon
−
0.550
−
Turn−off switching loss
Eoff
−
0.350
−
Total switching loss
Ets
−
0.900
−
Turn−on delay time
td(on)
−
65
−
tr
−
28
−
td(off)
−
180
−
tf
−
260
−
STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited
DYNAMIC CHARACTERISTIC Input capacitance Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance Gate charge total Gate to emitter charge
VCE = 480 V, IC = 15 A, VGE = 15 V
Gate to collector charge
pF
nC
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss
TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V*
Rise time Turn−off delay time Fall time Turn−on switching loss
TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V*
Eon
−
0.650
−
Turn−off switching loss
Eoff
−
0.600
−
Total switching loss
Ets
−
1.250
−
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N60S1EG.
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NGTG15N60S1EG TYPICAL CHARACTERISTICS 60
60 VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
VGE = 11 V
50 40 30 20
VGE = 9 V
10 VGE = 7 V
0 0
1
2
3
5
4
6
7
VGE = 11 V 40 30 VGE = 9 V
20 10
VGE = 7 V
8
0
1
2
3
5
4
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
60 VGE = 17 V to 13 V
60
IC, COLLECTOR CURRENT (A)
TJ = −40°C VGE = 11 V
50 40 30 20 VGE = 9 V 10 VGE = 7 V
0 0
1
2
3
4
5
TJ = 25°C 50 −40°C
150°C
40 30 20 10 0
7
6
0
8
2
4
6
8
10
12
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000 IC = 30 A
2.5 2.0
Cies CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 17 V to 13 V
0
70
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C 50
IC = 15 A IC = 10 A
1.5
IC = 5 A 1.0
1000
100 Coes
0.5 Cres 0 −50
10 −20
10
40
70
100
130
160
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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NGTG15N60S1EG
20
0.7
15
VCES = 480 V
10
5
0.5 Eoff
0.4 0.3 VCE = 400 V VGE = 15 V IC = 15 A RG = 22 W
0.2 0.1 0
0 0
10
20
30
40
50
60
80
70
0
90 100
20
40
60
80
100
120
140
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Switching Loss vs. Temperature
160
1.4
1000
SWITCHING LOSS (mJ)
td(off)
100
td(on) tr 10 VCE = 400 V VGE = 15 V IC = 15 A RG = 22 W
1 0
20
40
VCE = 400 V VGE = 15 V TJ = 150°C RG = 22 W
1.2
tf SWITCHING TIME (ns)
Eon
0.6 SWITCHING LOSS (mJ)
VGE, GATE−TO−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
Eon
Eoff
0.8 0.6 0.4 0.2 0
60
80
100
8
140 160
120
12
16
20
24
28
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 9. Switching Time vs. Temperature
Figure 10. Switching Loss vs. IC
32
1.2
1000
Eon
VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf td(off)
100
td(on) tr 10
VCE = 400 V VGE = 15 V TJ = 150°C RG = 22 W
1 8
12
16
20
24
28
0.9
Eoff
0.6
0.3
0
32
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Switching Time vs. RG
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75
85
NGTG15N60S1EG TYPICAL CHARACTERISTICS 1.2
1000
VGE = 15 V IC = 15 A RG = 22 W TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf td(off) 100
td(on) tr
10
VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C
1 5
15
25
35
45
55
65
75
Eoff
0.6
0.3
0
85
175
225
275
325
375
425
475
525
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. RG
Figure 14. Switching Loss vs. VCE
575
1000 IC, COLLECTOR CURRENT (A)
1000 tf td_off
100
td_on tr 10
VGE = 15 V IC = 15 A RG = 22 W TJ = 150°C
1 ms
175 225
275
325
375
425
475
525
50 ms
10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature
0.1
1
575
100 ms
100
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000 IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
0.9
Eon
100
10
1
0.1 VGE = 15 V, TC = 125°C
0.01 1
10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
Figure 17. Reverse Bias Safe Operating Area
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1000
NGTG15N60S1EG TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJC = 1.06 50% Duty Cycle
Ri (°C/W)
20% 10% 5%
Junction R1
C1
1% Single Pulse
0.001 0.000001
Rn
C2
Cn
Case
Ci = ti/Ri
2% 0.01
R2
0.00001
ti (sec)
0.1 0.5010 0.15051 0.33992 0.10550
7.1E−5 1.0E−4 0.002 0.003 0.00999
0.20020
0.03
0.11423
0.1
Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
Figure 19. Test Circuit for Switching Characteristics
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10
100
1000
NGTG15N60S1EG
Figure 20. Definition of Turn On Waveform
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NGTG15N60S1EG
Figure 21. Definition of Turn Off Waveform
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NGTG15N60S1EG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH
−T− B
SEATING PLANE
C
F T
S
4
DIM A B C D F G H J K L N Q R S T U V Z
A
Q 1 2 3
U
H K Z L
R
V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
J
G D N
INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080
STYLE 9: PIN 1. 2. 3. 4.
MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
GATE COLLECTOR EMITTER COLLECTOR
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