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NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features  Exceptional Safe Operating Area  High VCE; High Current Gain  NJV Prefix for Automotive and Other Applications Requiring  Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* http://onsemi.com DARLINGTON POWER TRANSISTORS 4 AMPERES 350 VOLTS 45 WATTS Benefits  Reliable Performance at Higher Powers  Designed for Inductive Loads  Very Low Current Requirements DPAK CASE 369C STYLE 1 Applications      MARKING DIAGRAM Internal Combustion Engine Ignition Control Switching Regulators Motor Controls Light Ballast Photo Flash YWW NJD 35N04G MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 350 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC ICM 4.0 8.0 Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 45 0.36 W W/C −65 to +150 C Collector Current Continuous Peak Operating and Storage Junction Temperature Range TJ, Tstg Y = Year WW = Work Week NJD35N04 = Device Code G = Pb−Free Device ORDERING INFORMATION Package Shipping† NJD35N04G DPAK (Pb−Free) 75 Units / Rail NJVNJD35N04G DPAK (Pb−Free) 75 Units / Rail NJD35N04T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVNJD35N04T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device Adc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 5 1 Publication Order Number: NJD35N04/D NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Case Junction−to−Ambient Value Unit C/W 2.78 71.4 RqJC RqJA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max 350 − − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mA, L = 10 mH) VCEO(sus) V Collector Cutoff Current (VCE = 500 V) (IB = 0) (VCE = 500 V, TC = 125C) ICES − − − − 50 250 mA Collector Cutoff Current (VCE = 250 V) (IB = 0) (VCE = 200 V, TC = 125C) ICEO − − − − 50 250 mA Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO − − 5.0 mA − − − − 1.5 1.5 − − − − 2.0 2.0 − − − − 2.0 2.0 2000 300 − − 90 − − − 60 − − − 18 0.8 − − ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) VCE(sat) Base−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) VBE(sat) Base−Emitter On Voltage (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V 125C) VBE(on) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 Vdc) hFE − V V V − − DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 2.0 A, VCE = 10 V, f = 1.0 MHz) fT Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) Cob MHz pF SWITCHING CHARACTERISTICS VCC = 12 V, Vclamp = 250 V, L = 4 mH IC = 2 A, IB1 = 20 mA, IB2 = −20 mA ts tf C B E 2 KW Figure 1. Darlington Circuit Schematic http://onsemi.com 2 mSec NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G TYPICAL CHARACTERISTICS 10,000 45 hFE, DC CURRENT GAIN 40 35 30 TC 25 20 15 10 1000 25C 100 VCE = 2 V 5.0 0 10 10 30 50 70 90 110 130 150 170 Figure 3. DC Current Gain Ic/Ib = 100 2.5 2.0 1.5 0.5 0 25C 125C 0.1 10 Figure 2. Power Derating 3.0 1.0 1.0 IC, COLLECTOR CURRENT (AMPS) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 3.5 0.1 T, TEMPERATURE (C) 4.0 VBE(on), BASE−EMITTER VOLTAGE (V) 125C 1.0 10 2.4 2.0 1.6 25C 1.2 125C 0.8 0.4 0 Ic/Ib = 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Base−Emitter Saturation Voltage 10 2.0 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 50 1.6 25C 1.2 0.8 125C VCE = 2 V 0.4 0.1 1.0 10 10 mS DC 1.0 1 mS 300 mS 100 mS 0.1 0.01 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Base−Emitter Voltage Figure 7. Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJD35N04/D