Transcript
NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
Ratings
VCEO
Collector-Emitter Voltage(1)
VCES
Collector-Emitter Voltage (VBE =0)
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PD PD
Total Power Dissipation Total Power Dissipation
@ Tamb = 45° @ Tcase= 45°
TJ
Junction Temperature
TStg
Storage Temperature range
Value BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58
45 32 45 32 7 7
Unit V V V
200
mA
50
mA
0.39
mW
1
Watts
200
°C
-65 to +150
°C
Value
Unit
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to mounting base
450
°C/W
RthJ-c
Thermal Resistance, Junction to ambient in free air
150
°C/W
COMSET SEMICONDUCTORS
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NPN BCY58 – BCY59 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specifie
Symbol ICES
ICES
IEBO VCEO VEBO
VCE(SAT)
VBE(SAT)
VBE
Ratings Collector Cutoff Current
Collector Cutoff Current
Test Condition(s) VCB =45 V VBE =0V VCB =32 V VB =0V VCB =45 V VBE =0V,Tamb =150°C VCB =32 V, VBE =0 Tamb =150°C
Symbol
Ratings
IC =10 µA, VCE =5 V hFE
DC Current Gain
IC =2 mA, VCE =5 V IC =10 mA, VCE =1 V
hfe
Small-Signal Current Gain
01/05/2016
IC =100 mA, VCE =1V IC =2 mA, VCE =5 V, f = 1kHz
Max
Unit
-
-
10
nA
-
-
10
µA
-
-
10
nA
45 32
-
-
V
7
-
-
V
-
0.12
0.25
-
04
08
0.6
0.7
0.85
0.7
0.85
1.2
-
0.5
-
0.2
-
-
0.55
-
0.7
-
0.7
-
-
0.76
-
BCY58 BCY59 BCY58
VBE =5.0 VIC =0
Test Condition(s)
Typ
BCY59
BCY59 BCY58 BCY59 IC =2 mA, IB =0 BCY58 BCY59 IE =1µA, IC =0 BCY58 BCY59 IC =10 mA IB =0.25 mA BCY58 Collector-Emitter saturation Voltage BCY59 IC =100 mA IB =2.5 mA BCY58 BCY59 IC =10 mA IB =0.25 mA BCY58 Base-Emitter Saturation Voltage BCY59 IC =100 mA IB =2.5 mA BCY58 BCY59 IC =10 µA, VCE =5 V BCY58 BCY59 VCE =VCE max IC =20 µA, Tj =100°C BCY58 BCY59 Base-Emitter Voltage IC =2 mA, VCE =5 V BCY58 BCY59 IC =10 mA, VCE =1 V BCY58 BCY59 IC =100 mA, VCE =1 V BCY58 Emitter Cutoff Current Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage
Min
BCY59VII BCY58VII Typ.20 >120 <220 >80 >40 >125 <250
COMSET SEMICONDUCTORS
V
BCY59VIII BCY58VIII >20 Typ.95 >180 <310 >120 <400 >45 >175 <350
V
BCY59IX BCY59X BCY58IX BCY58X >40 >60 Typ.190 Typ.300 >250 >380 <460 <630 >160 >240 <630 <1000 >60 >60 >250 >350 <500 <700 2/4
NPN BCY58 – BCY59 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specifie
Symbol
Ratings Transition frequency Noise figure , RS=2k
fT F td
Delay time
tr
Rise time
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
td
Delay time
tr
Rise time
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
CC
Collector capacitance
CE
Test Condition(s) IC =10 mA, VCE =5 V f = 100MHz IC =200 µA, VCE =5 V f = 1kHz, B =200Hz
IC=10 mA , IB =1 mA -IBM =1 mA, VBB=3.6 V R1= R2 = 5k RL= 990
IC=100 mA , IB =10 mA -IBM =10 mA, VBB =5 V R1 = 500R1 = 700 RL= 990
IE = Ie = 0 ,VCB =10 V f = 1MHz I = I = 0 ,VEB =0.5 V Emitter capacitance C c f = 1MHz
01/05/2016
BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58
COMSET SEMICONDUCTORS
Min
Typ
Mx
Unit
150
-
-
MHz
-
2
6
db
-
35
-
-
50
-
-
85
150
-
400
-
-
80
-
-
480
800
-
5
-
-
50
-
-
55
150
-
250
-
-
200
-
-
450
800
-
-
5
pF
-
-
15
pF
ns
ns
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NPN BCY58 – BCY59 MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L
max
12.7 0.9 2.54 45°
Pin 1 : Pin 2 : Pin 3 : Case :
0.49 5.3 4.9 5.8 1.2 1.16 -
emitter base Collector Collector
Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
www.comsetsemi.com 01/05/2016
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