Transcript
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HMC755LP4E v05.0312
Typical Applications
Features
The HMC755LP4E is Ideal for:
High Gain: 31 dB
• Cellular/3G & LTE/4G
High PAE: 28% @ +33 dBm Pout
• WiMAX, WiBro & Fixed Wireless
Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal
• Military & SATCOM
High Output IP3: +43 dBm
• Test Equipment
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Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm²
Functional Diagram
General Description
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The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.
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Amplifiers - Linear & Power - SMT
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz
Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V Parameter
Min.
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Frequency Range Gain
28
Gain Variation Over Temperature
Typ.
Max.
Units
2.3 - 2.8
GHz
31
dB
0.05
dB/ °C
Input Return Loss
10
dB
Output Return Loss
7
dB
Output Power for 1dB Compression (P1dB)
31
dBm
Saturated Output Power (Psat)
33
dBm
Output Third Order Intercept (IP3) [1]
43
dBm
Error Vector Magnitude @ 2.5 GHz (54 Mbps OFDM Signal @ +24.5 dBm Pout)
2.5
%
Supply Current (Icc1 + Icc2 + Icc3)
28
400
480
600
mA
Control Current (Ien1 + Ien2 + Ien3)
16
mA
Bias Current (Ics)
12
mA
[1] Two-tone output power of +25 dBm per tone, 1 MHz spacing.
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz
40
30
35
20
30
10
GAIN (dB)
S21 S11 S22
-10
15
-20
10
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
4.3
2
FREQUENCY (GHz)
2.2
2.4
2.6
2.8
3
3.2
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FREQUENCY (GHz)
Input Return Loss vs. Temperature 0
Output Return Loss vs. Temperature 0
-5
-10
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RETURN LOSS (dB)
+25 C +85 C - 40 C
20
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0
25
+25 C +85 C - 40 C
-15
-20 2
2.2
2.4
2.6
2.8
3
+25 C +85 C - 40 C
-5
-10
-15 2
3.2
2.2
2.4
2.6
2.8
3
3.2
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Gain vs. Temperature
40
RETURN LOSS (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
0 -10
ISOLATION (dB)
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Reverse Isolation vs. Temperature
-20
+25 C +85 C - 40 C
-30 -40 -50 -60 -70 2
2.2
2.4
2.6
2.8
3
3.2
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz
35
35
Psat (dBm)
40
30
+25 C +85 C - 40 C
25
20
20
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2.1
2.2
2.3
2.5
2.6
2.7
2.8
2.9
3
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 26 dBm 50
Output IP3 vs. Temperature @ 2.4 GHz 50
45
40
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45
+25 C +85 C - 40 C
35
30 2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
40
+25 C +85 C - 40 C
35
30
3
18
19
20
FREQUENCY (GHz)
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22
23
24
25
26
27
Power Compression @ 2.5 GHz 50
Pout (dBm), GAIN (dB), PAE (%)
3
21
SINGLE TONE POUT (dBm)
3.5
VDET (V)
2.4
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FREQUENCY (GHz)
VDET Output Voltage vs. Temperature +25 C +85 C - 40 C
2 1.5 1 0.5 0
40
30
20
Pout Gain PAE
10
0 13
17
21
25
OUTPUT POWER (dBm)
3
30
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+25 C +85 C - 40 C
IP3 (dB)
P1dB (dBm)
Psat vs. Temperature
40
25
IP3 (dBm)
Amplifiers - Linear & Power - SMT
P1dB vs. Temperature
29
33
-20
-15
-10
-5
0
5
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain & Power vs. Supply Voltage
Noise Figure vs. Temperature
NOISE FIGURE (dB)
10
40
Gain P1dB IP3
4 +25 C +85 C - 40 C
2
20
0
4.5
5
5.5
2.2
SUPPLY VOLTAGE (V)
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
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FREQUENCY (GHz)
EVM vs. Frequency (54 Mbps OFDM Signal)
Power Dissipation 6
7
5.5
6
Max Pdiss @ +85C
5
5
4.5 4 3.5 3 2.5 2 -20
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POWER DISSIPATION (W)
6
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30
8
-15
-10
-5
0
5
4
2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz
3 2 1 0 15
17
INPUT POWER (dBm)
19
21
23
25
27
OUTPUT POWER (dBm)
Amplifiers - Linear & Power - SMT
12
EVM (%)
GAIN (dB), P1dB (dBm), IP3 (dBm)
50
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EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal)
7 6
EVM (%)
5 4
+25 C +85 C - 40 C
3 2 1 0 15
17
19
21
23
25
27
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Supply Current vs. Supply Voltage 5.5V
Control Voltage (VEN1, 2, 3)
Vcc +0.5
Vcc (V)
Icq (mA)
4.5
430
RF Input Power (RFIN)(Vcc = +5V) Junction Temperature
+5 dBm
5.0
480
150 °C
5.5
Continuous Pdiss (T = 85 °C) (derate 80 mW/°C above 85 °C)
530
5.2 W
Thermal Resistance (junction to ground paddle)
12.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1B
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Collector Bias Voltage (Vcc1, Vcc2, Vcc3)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
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Outline Drawing
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Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings
NOTES:
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1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information Part Number
Package Body Material
Lead Finish
HMC755LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating MSL3
[2]
Package Marking [1] H755 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24
N/C
2
GND
Ground: Backside of package has exposed metal paddle that must be connected to ground thru a short path. Vias under the device are required.
4
RFIN
This pin is DC coupled and matched to 50 Ohms.
7
VCS
DC power supply pin for bias circuitry.
VEN1 - 3
Power control pins. For max power these pins should be connected to 5V. This voltage can be reduced, or R1-R4 resistor values increased to reduce the quiescent current. For full power down, apply V <0.5V
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8 - 10
Interface Schematic
VDET
DC voltage output proportional to RFOUT signal.
15, 16, 17
RFOUT
RF output and DC bias for the output stage. External RF matching, bypass capacitors, and pull up choke are required as shown in the application circuit.
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11
20
Vcc2
Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic.
23
Vcc1
Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Amplifiers - Linear & Power - SMT
Description These pins are not connected internally. However, all data shown herein was measured with these pins connected to RF/DC ground.
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Function
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Pin Number
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HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz
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Amplifiers - Linear & Power - SMT
Evaluation PCB
List of Materials for Evaluation PCB 123643 Item
Description
Item
Description
PCB Mount SMA Connector
U1
HMC755LP4E Power Amplifier
J3, J4
2MM Molex Header
PCB [2]
123641 Eval Board
C1 - C10
100 pF Capacitor, 0402 Pkg.
[1] Reference this number when ordering complete evaluation PCB
C11
3 pF Capacitor Ultra Low ESD, 0603 Pkg.
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
C12
1.5 pF Capacitor Ultra Low ESD, 0603 Pkg.
C13 - C15
1000 pF Capacitor, 0603 Pkg.
C16
2.2 µF Capacitor, Tantalum
C17
4.7 µF Capacitor, Tantalum
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J1, J2
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[1]
C18 - C12
10000 pF Capacitor, 0402 Pkg.
L1
10 nH Inductor, 0603 Pkg.
R1
0 Ohm Resistor, 0402 Pkg.
R2
200 Ohm Resistor, 0402 Pkg.
R3
300 Ohm Resistor, 0402 Pkg.
R4
130 Ohm Resistor, 0402 Pkg.
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes and the evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC755LP4E v05.0312
GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz
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TL1
TL2
Impedance
28 Ohm
50 Ohm
Physical Length
0.0465”
0.1950”
Electrical Length @ 25 GHz Measurement
5.9°
22.6°
Package edge to center of capacitor C11
Center of capacitor C11 to center of capacitor C12
Amplifiers - Linear & Power - SMT
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Application Circuit
PCB Material: 10 mil Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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