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HMC1022 v00.0811
Features
The HMC1022 is ideal for:
High P1dB Output Power: 22 dBm
• Test Instrumentation
High Psat Output Power: 24 dBm
• Microwave Radio & VSAT
High Gain: 12 dB
• Military & Space
High Output IP3: 32 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 150 mA
• Fiber Optics
50 Ohm Matched Input/Output
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Typical Applications
Die Size: 2.82 x 1.50 x 0.1 mm
Functional Diagram
General Description
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The HMC1022 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, 32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 150 mA from a +10 V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC1022 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
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Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
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Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1] Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
DC - 16 9.5
11.5
Typ.
Max.
Min.
16 - 36 9.5
12
9.5
Typ.
Max.
Units
36 - 48
GHz
11.5
dB
Gain Flatness
±0.5
±0.3
±1.1
dB
Gain Variation Over Temperature
0.012
0.018
0.041
dB/ °C
Input Return Loss
18
16
15
dB
Output Return Loss
28
22
18
dB
Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat)
20
22 24.5
19.5
19
dBm
23.5
21.5
16
21
dBm
Output Third Order Intercept (IP3)
35
32
29
dBm
Noise Figure
4
5.5
8
dB
150
150
150
mA
Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
[1] Adjust Vgg1 between -2 to 0 V to achieve Idd = 150 mA typical.
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
18
10
16 S21 S11 S22
-10
12 10
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-20 -30
8
-40
6
0
5
10
15
20
25
30
35
40
45
50
55
0
5
10
20
25
30
35
40
45
50
FREQUENCY (GHz)
Input Return Loss vs. Temperature 0
Output Return Loss vs. Temperature 0
+25C +85C -55C
-20
-30
0
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-10
-40
5
10
15
20
25
30
35
40
45
-10
-30
-40
50
0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
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Gain vs. Vdd [1]
+25C +85C -55C
-20
FREQUENCY (GHz)
18
20 10
16
+8V +10V +11V
0 RESPONSE (dB)
14
GAIN (dB)
15
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FREQUENCY (GHz)
RETURN LOSS (dB)
+25C +85C -55C
14 GAIN (dB)
0
Amplifiers - Linear & Power - Chip
Gain vs. Temperature
20
RETURN LOSS (dB)
RESPONSE (dB)
Gain & Return Loss
12 10
S21 S11 S22
-10 -20 -30 -40
8
-50
6 0
5
10
15
20
25
30
35
40
45
50
-60 0.0001
FREQUENCY (GHz)
0.001
0.01
0.1
1
10
FREQUENCY (GHz)
[1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V, Vgg2= +5.5V.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz P1dB vs. Supply Voltage [1]
24
24
22
22
P1dB (dBm)
26
20
20 +8V +10V +11V
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18
+25C +85C -55C
16
16
14
14
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
Psat vs. Temperature
25
30
35
40
45
50
35
40
45
50
35
40
45
50
Psat vs. Supply Voltage [1]
28
28
26
26
22
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24
20
16 0
5
10
15
20
25
30
35
40
45
24 22
+8V +10V +11V
20
+25C +85C -55C
18
18 16
50
0
5
10
15
FREQUENCY (GHz)
20
26
28
24
26
Psat (dBm)
22 20 18
30
24 22 100 mA 150 mA
20
16 100 mA 150 mA
14
25
FREQUENCY (GHz)
Psat vs. Supply Current [2]
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P1dB vs. Supply Current [2]
P1dB (dBm)
20
FREQUENCY (GHz)
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FREQUENCY (GHz)
Psat (dBm)
P1dB (dBm)
26
18
Psat (dBm)
Amplifiers - Linear & Power - Chip
P1dB vs. Temperature
18 16
12 0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
0
5
10
15
20
25
30
FREQUENCY (GHz)
[1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; forVdd= 11V Vgg2= +5.5V. [2] Vdd= +10V, Vgg2=+3.5V.
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
38
36
36
34
34
32
32
IP3 (dBm)
38
30 28
+8V +10V +11V
26
24
24
22
22
0
4
8
12
16
20
24
28
32
36
40
44
48
0
4
8
12
16
24
28
32
36
40
44
48
Output IM3 @ Vdd = +10V [1]
Output IM3 @ Vdd = +8V [1] 60
60
50
50 40
30 20
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40
4 GHz 10 GHz 16 GHz 22 GHz
10 0 0
2
4
6
20
28 GHz 34 GHz 40 GHz 44 GHz
8
10
12
14
16
18
30
4 GHz 10 GHz 16 GHz 22 GHz
10
0
2
4
6
8
12
50
10 NOISE FIGURE(dB)
60
40 30 20
4 GHz 10 GHz 16 GHz 22 GHz
10
10
12
14
16
18
20
Pout/TONE (dBm)
Noise Figure vs. Temperature
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Output IM3 @ Vdd = +11V [1]
28 GHz 34 GHz 40 GHz 44 GHz
0
20
Pout/TONE (dBm)
IM3 (dBc)
20
FREQUENCY (GHz)
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FREQUENCY (GHz)
IM3 (dBc)
28
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+25C +85C -55C
26
30
Amplifiers - Linear & Power - Chip
Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone [1]
IM3 (dBc)
IP3 (dBm)
Output IP3 vs. Temperature @ Pout = 14 dBm / Tone
28 GHz 34 GHz 40 GHz 44 GHz
+25C +85C -55C
8 6 4 2
0
0 0
2
4
6
8
10
12
14
16
18
20
Pout/TONE (dBm)
0
4
8
12
16
20
24
28
32
36
40
44
48
FREQUENCY (GHz)
[1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V Vgg2= +5.5V.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Power Compression @ 24 GHz
Reverse Isolation vs. Temperature +25C +85C -55C
-30 -40
28
Pout Gain PAE
24 20 16 12
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-50 -60 -70 -80
8 4 0
0
5
10
15
20
25
30
35
40
45
50
-4
30
20
0 100
8
11
14
17
Gain & Power vs. Supply Voltage @ 24 GHz
Gain P1dB Psat
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5
5
30
25
10
2
INPUT POWER (dBm)
Gain & Power vs. Supply Current @ 24 GHz
15
-1
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FREQUENCY (GHz)
110
120
130
140
Gain (dB), P1dB (dBm), Psat (dBm)
ISOLATION (dB)
Pout (dBm), GAIN (dB), PAE (%)
32
-20
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - Chip
0 -10
25
20
Gain P1dB Psat
15
10
5
0
150
8
9
Idd (mA)
10
11
Vdd (V)
2
POWER DISSIPATION (W)
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Power Dissipation
1.5
1 4 GHz 10 GHz 20 GHz 30 GHz 40 GHz 46 GHz
0.5
0 0
3
6
9
12
15
INPUT POWER (dBm)
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Second Harmonics vs. Temperature @ Pout = 10 dBm, Vdd = 10V & Vgg = 4.5V, 150 mA
Second Harmonics vs. Vdd @ Pout = 10 dBm, Idd = 150 mA [1]
60 +25C +85C -55C
50 40 30
+8V +10V +11V
50 40 30 20
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20
60
10
10
0
0
0
4
8
12
16
20
24
0
FREQUENCY(GHz)
4
8
12
16
20
24
FREQUENCY(GHz)
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Second Harmonics vs. Pout Vdd = 10V & Vgg = 4.5V & Idd = 150 mA 60 50 40
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SECOND HARMONIC (dBc)
70
+4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm
30 20 10 0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Amplifiers - Linear & Power - Chip
70 SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
70
Absolute Maximum Ratings
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Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
12V
Output Power into VSWR >7:1
24 dBm
-3 to 0 Vdc
Storage Temperature
-65 to 150 °C
For Vdd = 12V, Vgg2 = 5.5V Idd >125mA
Operating Temperature
-55 to 85 °C
For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) to 5.5V
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For Vdd < 8.5V, Vgg2 must remain > 2V RF Input Power (RFIN)
20 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C) (derate 27 mW/°C above 85 °C)
1.76 W
Thermal Resistance (channel to die bottom)
37 °C/W
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+8
150
+10
150
+11
150
[1] For Vdd= +8V, Vgg=+3.5V; for Vdd= +10V, Vgg= +4.5V; for Vdd= 11V Vgg= +5.5V.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
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Amplifiers - Linear & Power - Chip
Outline Drawing
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Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
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NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Pad Descriptions Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +4.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass capacitor per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass capacitor per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass capacitor per application circuit herein.
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VGG1
Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note.
GND
Die bottom must be connected to RF/DC ground.
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Die Bottom
Amplifiers - Linear & Power - Chip
Function
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Pad Number
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
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Application Circuit
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Amplifiers - Linear & Power - Chip
Assembly Diagram
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC1022 v00.0811
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bond 0.076mm (0.003”)
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50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
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Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes.
Figure 1.
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Handling Precautions
0.127mm (0.005”) Thick Alumina Thin Film Substrate
0.102mm (0.004”) Thick GaAs MMIC Wire Bond
0.076mm (0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Mounting
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The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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