Obsolete Analog Devices Welcomes Hittite Microwave Corporation Www.analog.com

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TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC719LP4 / 719LP4E v04.0610 Typical Applications Features The HMC719LP4(E) is ideal for: Noise Figure: 1.0 dB • Cellular/3G and LTE/WiMAX/4G Gain: 34 dB • BTS & Infrastructure Output IP3: +39 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Access Points 50 Ohm Matched Input/Output TE • Test Equipment & Military 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description LE The HMC719LP4(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.3 and 2.9 GHz. The amplifier has been optimized to provide 1.0 dB noise figure, 34 dB gain and +39 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC719LP4(E) shares the same package and pinout with the HMC718LP3(E) 600 - 1400 MHz LNA. The HMC719LP4(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz O Electrical Specifications, TA = +25°C, Rbias = 1.5k Ohms* Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 1.3 - 2.2 27 Gain Variation Over Temperature Typ. Vdd = +5V Max. Min. 2.2 - 2.9 32 22 0.02 Min. 29 35 24 0.02 2.2 - 2.9 GHz 28 dB 0.02 13.5 17.5 16.5 dB 10.5 9.5 13.5 11.5 dB 21.5 dBm 23 dBm Saturated Output Power (Psat) 12.5 18 Output Third Order Intercept (IP3) 32 Total Supply Current (Idd) 187 15.5 18 18.5 187 18 23 31 220 21.5 39 220 272 1.25 dB/ °C 16 15.5 1.2 Units Input Return Loss 12.5 0.95 Max. 1.0 Output Power for 1 dB Compression (P1dB) 1.6 Typ. Noise Figure Output Return Loss 1.3 Max. 1.3 - 2.2 26.5 0.02 1.3 Typ. 1.6 39 315 272 dB dBm 315 mA * Rbias resistor sets current, see application circuit herein, Vdd = Vdd1 = Vdd2 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Broadband Gain & Return Loss [1] [2] 7 Gain vs. Temperature [1] S21 30 35 Vdd=5V Vdd=3V 10 GAIN (dB) S11 0 -10 S22 0.8 1.1 1.4 1.7 2 2.3 2.6 FREQUENCY (GHz) 2.9 3.2 20 1.2 3.5 1.5 1.8 2.1 2.4 FREQUENCY (GHz) LE -40 0.5 +25C +85C -40C 25 -20 -30 30 TE RESPONSE (dB) 20 Gain vs. Temperature [2] 2.7 3 Input Return Loss vs. Temperature [1] 0 40 25 20 1.2 B SO GAIN (dB) 30 +25C +85C -40C 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 Reverse Isolation vs. Temperature [1] +25C +85C -40C +25C +85C -40C -20 ISOLATION (dB) RETURN LOSS (dB) -20 0 -10 -15 -20 1.2 +25C +85C -40C -15 -30 1.2 0 -5 -10 -25 3 Output Return Loss vs. Temperature [1] O RETURN LOSS (dB) -5 35 Amplifiers - Low Noise - SMT 40 40 -40 -60 1.5 1.8 2.1 2.4 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 1.5K 2.7 3 -80 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 [2] Vdd = 3V, Rbias = 1.5K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC719LP4 / 719LP4E v04.0610 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Noise Figure vs. Temperature [1] [2] P1dB vs. Temperature [1] [2] 26 +85C 24 Vdd=5V Vdd=3V 1.6 Vdd=5V 22 P1dB (dBm) 1.4 1.2 1 20 +25C +85C -40C 18 Vdd=3V TE 16 0.8 +25C 0.6 14 -40C 0.4 1.2 1.5 1.8 2.1 2.4 2.7 12 1.2 3 FREQUENCY (GHz) Vdd=5V Vdd=5V B SO 12 1.2 2.7 3 Vdd=3V 35 Vdd=3V +25C +85C -40C 1.5 1.8 2.1 2.4 2.7 30 25 1.2 3 Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [3] 1.5 1.8 2.1 2.4 FREQUENCY (GHz) O Output IP3 and Idd vs. Supply Voltage @ 2200 MHz [3] 250 40 35 200 35 200 30 150 30 150 25 100 25 100 40 IP3 15 2.7 50 Idd1 Idd2 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 [2] Vdd = 3V, Rbias = 1.5K 250 IP3 20 15 2.7 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 1.5K 300 Idd1 Idd2 50 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [3] Rbias = 1.5K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 20 IP3 (dBm) 45 Idd (mA) 300 45 IP3 (dBm) 3 40 FREQUENCY (GHz) 7-3 2.7 +25C +85C -40C 45 22 14 2.4 50 24 16 2.1 Output IP3 vs. Temperature [1] [2] 26 18 1.8 LE Psat vs. Temperature [1] [2] 20 1.5 FREQUENCY (GHz) IP3 (dBm) NOISE FIGURE (dB) 1.8 P1dB (dBm) Amplifiers - Low Noise - SMT 2 HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 35 Pout Gain PAE 25 20 15 5 0 -23 -20 -17 -14 INPUT POWER (dBm) -11 -8 25 Pout Gain PAE 20 0 -5 -30 -27 -24 -21 -18 -15 -12 INPUT POWER (dBm) -9 -6 -27 -24 -21 -18 INPUT POWER (dBm) -15 -12 P1dB Gain NF 5 0 -5 -30 -27 -24 -21 -18 -15 INPUT POWER (dBm) -12 -9 25 1.1 20 1 15 5.1 P1dB Gain NF 1.4 35 1.3 30 1.2 25 1.1 20 1 0.9 15 0.9 0.8 10 2.7 5.5 [2] Vdd = 3V, Rbias = 1.5K 1.5 NOISE FIGURE (dB) 1.2 [1] Vdd = 5V, Rbias = 1.5K Pout Gain PAE 10 40 30 3.9 4.3 4.7 VOLTAGE SUPPLY (V) 15 1.4 1.3 3.5 20 45 35 3.1 25 1.5 NOISE FIGURE (dB) O 40 30 Gain, Power & Noise Figure vs. Supply Voltage @ 2200 MHz [3] 45 Gain (dB) & P1dB (dBm) 0 -3 Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [3] 10 2.7 5 35 30 5 10 Power Compression @ 2200 MHz [2] B SO Pout (dBm), Gain (dB), PAE (%) 35 10 15 -5 -30 Power Compression @ 2200 MHz [1] 15 Pout Gain PAE 20 LE -26 25 Pout (dBm), Gain (dB), PAE (%) -5 -29 30 TE 10 Amplifiers - Low Noise - SMT 35 Pout (dBm), Gain (dB), PAE (%) 40 Gain (dB) & P1dB (dBm) Pout (dBm), Gain (dB), PAE (%) 40 30 7 Power Compression @ 1700 MHz [2] Power Compression @ 1700 MHz [1] 0.8 3.1 3.5 3.9 4.3 4.7 VOLTAGE SUPPLY (V) 5.1 5.5 [3] Rbias = 1.5K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC719LP4 / 719LP4E v04.0610 Gain, Noise Figure & Rbias @ 1900 MHz 40 35 1.8 38 33 1.6 36 31 1.4 34 Vdd=3V Vdd=5V 32 100 Rbias (Ohms) 1000 10000 25 100 1000 Rbias (Ohms) 1 0.8 10000 O B SO LE 10 1.2 Vdd=3V Vdd=5V 27 30 1 29 TE GAIN (dB) IP3 (dBm) Output IP3 vs. Rbias @ 1900 MHz 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz HMC719LP4 / 719LP4E GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd 3V Rbias Ω Idd1 (mA) Idd2 (mA) 1k 27 154 1.5k 33 154 10k 46 154 Min Max Recommended 1K [1] Open Circuit 5V 0 Open Circuit 120 70 168 470 88 168 1.5k 104 168 TE Vdd (V) [1] Operation with Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. Drain Bias Voltage (Vdd) 5.5 V -5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 21.2 mW/°C above 85 °C) 1.9 W B SO RF Input Power (RFIN) (Vdd = +5 Vdc) Typical Supply Current vs. Vdd (Rbias = 1.5k) LE Absolute Maximum Ratings Thermal Resistance (channel to ground paddle) 47.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd (V) Idd1 (mA) Idd2 (mA) 2.7 22 150 3.0 33 154 3.3 44 155 4.5 87 163 5.0 104 168 5.5 121 169 Amplifiers - Low Noise - SMT v04.0610 Note: Amplifier will operate over full voltage ranges shown above. O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC719LP4 / 719LP4E v04.0610 LE TE Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. O 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC719LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC719LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H719 XXXX H719 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Description N/C No connection necessary. These pins may be connected to RF/DC ground without affecting performance. Interface Schematic 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 17 RFOUT RF Output and DC BIAS for the second amplifier. See Application Circuit for off-chip components. 19 RFIN2 This pin is DC coupled. An off-chip DC blocking capacitor is required. LE B SO Pin Number TE Function 1, 3 - 5, 7 - 16, 18, 20, 22 RFOUT1 This pin is matched to 50 Ohms. 23, 24 Vdd1, 2 Power Supply Voltage for the first amplifier. External bypass capacitors are required. See application circuit. O 21 Amplifiers - Low Noise - SMT 7 Pin Descriptions For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8 HMC719LP4 / 719LP4E v04.0610 B SO LE TE Application Circuit O Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz TE LE B SO List of Materials for Evaluation PCB 121242 Item J1 - J3 PCB Mount SMA Connector 2mm Vertical Molex Connector O J4 - J5 Description C1, C8, C12 220 pF Capacitor, 0402 Pkg. C3 10 nF Capacitor, 0402 Pkg. C4, C7, C11 10 nF Capacitor, 0603 Pkg. C5, C6, C13 1000 pF Capacitor, 0603 Pkg. C10 4.7 uF Capacitor, 0805 Pkg. L2 22 nH Inductor, 0402 Pkg. L3 6.8 nH Inductor, 0603 Pkg. L4 47 nH Inductor, 0603 Pkg. R1 1.5 kOhm Rbias Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0402 Pkg. U1 HMC719LP4(E) Amplifier PCB [2] 121126 Evaluation PCB Amplifiers - Low Noise - SMT 7 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25RF For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10