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HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
The HMC965LP5E is ideal for:
Saturated Output Power: +34 dBm @ 20% PAE
• Point-to-Point Radios
High Output IP3: +40 dBm
• Point-to-Multi-Point Radios
High Gain: 27 dB
• VSAT & SATCOM
DC Supply: +6V @ 1200 mA
• Military & Space
No External Matching Required
Functional Diagram
General Description
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Features
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The HMC965LP5E is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12.5 and 15.5 GHz. The HMC965LP5E provides 27 dB of gain, +34 dBm of saturated output power, and 20% PAE from a +6V supply. The HMC965LP5E exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC965LP5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package and requires no external matching components.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 1200 mA [1]
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Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
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Typical Applications
Parameter
Min.
Frequency Range
Gain [3]
24
Gain Variation Over Temperature
Typ.
Max.
Units
12.5 - 15.5
GHz
27
dB
0.05
dB/ °C
Input Return Loss
12
dB
Output Return Loss
12
dB
32
dBm
Saturated Output Power (Psat)
34
dBm
Output Third Order Intercept (IP3)[2]
40
dBm
1200
mA
Output Power for 1 dB Compression (P1dB)
Total Supply Current (Idd)
30
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical. [2] Measurement taken at +6V @ 1200 mA, Pout / Tone = +22 dBm [3] Board loss subtracted out
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Broadband Gain & Return Loss vs. Frequency [1]
Gain vs. Temperature [1]
30
38
GAIN (dB)
S21 S11 S22
0
26
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-10
22
-30
18
11
12
13 14 15 FREQUENCY (GHz)
16
17
18
12
13
14
15
16
FREQUENCY (GHz)
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Input Return Loss vs. Temperature
Output Return Loss vs. Temperature 0
0
-5
+25C +85C -40C
-8
-12
-16
-20 12
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-4
13
14
15
-10 -15
+25C +85C -40C
-20 -25 -30 12
16
13
38
36
36
34
34
P1dB (dBm)
38
32 30
16
15
16
5V 6V
32 30
+25C +85C -40C
28
15
P1dB vs. Supply Voltage
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P1dB vs. Temperature
14 FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
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Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
10
-20
RETURN LOSS (dB)
+25C +85C -40C
34
RETURN LOSS (dB)
RESPONSE (dB)
20
28
26
26 12
13
14 FREQUENCY (GHz)
15
16
12
13
14 FREQUENCY (GHz)
[1] Board loss subtracted out
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Psat vs. Supply Voltage 38
36
36 Psat (dBm)
38
34
+25C +85C -40C
28
5V 6V
28
12
13
14
15
16
12
13
14
15
16
15
16
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd) 38
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FREQUENCY (GHz)
Psat vs. Supply Current (Idd) 38 36
32 30
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34
Psat (dBm)
36
P1dB (dBm)
32
30
26 12
13
14
15
34 32
1100 mA 1200 mA 1300 mA
30
1100 mA 1200 mA 1300 mA
28
28 26
16
12
13
FREQUENCY (GHz)
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Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48 46 44
14 FREQUENCY (GHz)
Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 46
+25C +85C -40C
1100 mA 1200 mA 1300 mA
44 42 IP3 (dBm)
42 40 38
40 38
36
36
34
34
32
32
30
30 12
13
14 FREQUENCY (GHz)
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34
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32
30
IP3 (dBm)
Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
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Psat (dBm)
Psat vs. Temperature
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 46
70
IM3 (dBc)
42 40 38
40 30 20
34
10
32 30
0
12
13
14
15
16
10
FREQUENCY (GHz)
12
14
16
18
20
22
24
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Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
Power Compression @ 14 GHz
80
60
40 30
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50
13 GHz 14 GHz 15 GHz
20 10 0 10
12
14
16
18
20
22
Pout (dBm), GAIN (dB), PAE (%)
40
70
35
Pout Gain PAE
30 25 20 15 10 5
0 -10
24
-8
-6
Pout/TONE (dBm)
-2
0
2
4
6
8
10
INPUT POWER (dBm)
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0
10
-10
12.5 GHz +25C 12.5 GHz +85C 12.5 GHz -55C 15.5 GHz +25C 15.5 GHz +85C 15.5 GHz -55C
+25C +85C -40C
-20 ISOLATION (dB)
1
-4
Reverse isolation vs. Temperature
Detector Voltage Over Temperature
Vref-Vdet (V)
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50
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36
IM3 (dBc)
13 GHz 14 GHz 15 GHz
60
5V 6V
0.1
-30
Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
80
44 IP3 (dBm)
Output IM3 @ Vdd = +5V
48
-40 -50 -60 -70 -80
0.01
-5
3
11
19
OUTPUT POWER (dBm)
27
35
-90 11
12
13
14
15
16
17
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Gain & Power vs. Supply Current @ 14 GHz
Gain & Power vs. Supply Voltage @ 14 GHz
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Gain (dB), P1dB (dBm), Psat (dBm)
50
35
30
GAIN P1dB Psat
20
15 1100
45
Gain P1dB Psat
40 35 30
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25
25 20
1150
1200
1250
1300
5
Idd (mA)
5.5
6
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Vdd (V)
Power Dissipation
10
8 7 6
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POWER DISSIPATION (W)
9
5
Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
4 3 2 1
0 -10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings
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Gain (dB), P1dB (dBm), Psat (dBm)
40
Drain Bias Voltage (Vdd)
+8V
RF Input Power (RFIN) Channel Temperature
Typical Supply Current vs. Vdd Vdd (V)
Idd (mA)
+24 dBm
+5.0
1200
150 °C
+6.0
1200
Continuous Pdiss (T= 85 °C) (derate 137 mW/°C above 85 °C)
8.9 W
Thermal Resistance (channel to ground paddle)
7.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1200 mA.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
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PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information Part Number
Package Body Material
Lead Finish
HMC965LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating MSL1
[2]
Package Marking [1] H965 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C
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Pin Descriptions Pin Number
Function
Description
1 - 3, 6, 7, 10 - 12, 16, 22 - 24, 27, 32
N/C
These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally.
4
RFIN
This pad is DC coupled and matched to 50 Ohms.
5, 8, 14, 17, 20, 25, 31
GND
These pins and package bottom must be connected to RF/DC ground.
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Vgg1
Gate control for amplifier. External bypass capacitors of 100 pF, 10 nF and 4.7 uF are required.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
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Outline Drawing
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HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Pin Descriptions (continued)
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Description
13, 15, 26, 28 - 30
Vdd5, Vdd4, Vdd4, Vdd3, Vdd2, Vdd1
Drain bias voltage for the amplifier. External bypass capacitors of 100pF, 10nF and 4.7µF capacitors are required. Pins 15 and 26 are connected internally Vdd4 may be applied to either pin 15 or pin 26
18
Vref
DC voltage of diode biased through external resistor, used for temperature compensation of Vdet.
19
Vdet
DC voltage representing RF output power rectified by diode which is biased through an external resistor.
21
RFOUT
This pin is DC coupled and matched to 50 Ohms.
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Application Circuit
Interface Schematic
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Function
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Pin Number
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC965LP5E v02.0711
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
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List of Materials for Evaluation PCB EVAL01-HMC965LP5E Item
Description
J1, J2, J5, J6
K Connector, SRI
J3, J4
DC Pin
C1, C5 - C11
100 pF Capacitor, 0402 Pkg.
C12, C16 - C27
10 nF Capacitor, 0402 Pkg.
C23, C27 - C33
4.7 µF Capacitor, Case A.
U1
HMC965LP5E Power Amplifier
PCB [2]
600-00048-00 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4
[1]
The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT
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Evaluation PCB
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