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NCP5304 High Voltage, High and Low Side Driver The NCP5304 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs with cross conduction protection. http://onsemi.com MARKING DIAGRAMS Features •High Voltage Range: up to 600 V •dV/dt Immunity ±50 V/nsec •Gate Drive Supply Range from 10 V to 20 V •High and Low Drive Outputs •Output Source / Sink Current Capability 250 mA / 500 mA •3.3 V and 5 V Input Logic Compatible •Up to VCC Swing on Input Pins •Extended Allowable Negative Bridge Pin Voltage Swing to -10 V for Signal Propagation •Matched Propagation Delays between Both Channels •Outputs in Phase with the Inputs •Cross Conduction Protection with 100 ns Internal Fixed Dead Time •Under VCC LockOut (UVLO) for Both Channels •Pin-to-Pin Compatible with Industry Standards •These are Pb-Free Devices Typical Applications 1 SOIC-8 D SUFFIX CASE 751 8 P5304 ALYW G 1 NCP5304 AWLG YYWW 1 PDIP-8 P SUFFIX CASE 626 NCP5304 A L or WL Y or YY W or WW G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package •Half-bridge Power Converters •Full-bridge Converters PINOUT INFORMATION IN_LO IN_HI VCC GND 1 2 3 4 8 7 6 5 VBOOT DRV_HI BRIDGE DRV_LO 8 Pin Package ORDERING INFORMATION Device Package Shipping† NCP5304PG PDIP-8 (Pb-Free) 50 Units / Rail NCP5304DR2G SOIC-8 2500 / Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 3 1 Publication Order Number: NCP5304/D NCP5304 Vbulk + C1 D4 GND Q1 Vcc T1 C3 U1 8 IN_LO VBOOT 2 7 IN_HI DRV_HI 3 6 Vcc Bridge 4 5 GND DRV_LO 1 GND NCP1395 L1 Out+ + C4 C3 Lf OutD2 C6 Q2 NCP5304 GND D1 GND GND R1 D3 GND U2 Figure 1. Typical Application Resonant Converter (LLC type) Vbulk + C1 C5 D4 GND Q1 Vcc C3 T1 U1 1 8 IN_LO VBOOT 2 7 IN_HI DRV_HI 3 6 Vcc Bridge 4 5 GND DRV_LO GND NCP1395 L1 Out+ + C3 Out- D2 C6 Q2 NCP5304 GND D1 C4 GND GND R1 D3 GND U2 Figure 2. Typical Application Half Bridge Converter VCC VCC VBOOT UV DETECT IN_HI PULSE TRIGGER GND IN_LO LEVEL SHIFTER GND CROSS CONDUCTION PREVENTION S Q R Q UV DETECT DRV_HI BRIDGE VCC DRV_LO DELAY GND GND GND Figure 3. Detailed Block Diagram http://onsemi.com 2 NCP5304 PIN DESCRIPTIONS Pin No. Pin Name Pin Function 1 IN_LO Logic Input for Low side driver output in phase 2 IN_HI Logic Input for High side driver output in phase 3 VCC Low side and main power supply 4 GND Ground 5 DRV_LO Low side gate drive output 6 BRIDGE Bootstrap return or High side floating supply return 7 DRV_HI High side gate drive output 8 VBOOT Bootstrap power supply MAXIMUM RATINGS Rating VCC VCC_transient Symbol Main power supply voltage Main transient power supply voltage: IVCC_max = 5 mA during 10 ms VBRIDGE VHV: High Voltage BRIDGE pin VBRIDGE Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation to DRV_LO Value Unit -0.3 to 20 V 23 V -1 to 600 V -10 V VBOOT-VBRIDGE VHV: Floating supply voltage -0.3 to 20 V VDRV_HI VHV: High side output voltage VBRIDGE - 0.3 to VBOOT + 0.3 V VDRV_LO Low side output voltage -0.3 to VCC + 0.3 V 50 V/ns -1.0 to VCC + 0.3 V 2 kV 200 V dVBRIDGE/dt VIN_XX Allowable output slew rate Inputs IN_HI, IN_LO ESD Capability: - HBM model (all pins except pins 6-7-8 in 8 pins package or 11-12-13 in 14 pins package) - Machine model (all pins except pins 6-7-8 in 8 pins package or 11-12-13 in 14 pins package) Latch up capability per Jedec JESD78 RqJA TJ_max °C/W Power dissipation and Thermal characteristics PDIP-8: Thermal Resistance, Junction-to-Air SO-8: Thermal Resistance, Junction-to-Air 100 178 Maximum Operating Junction Temperature +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 3 NCP5304 ELECTRICAL CHARACTERISTIC (VCC = Vboot = 15 V, VGND = Vbridge, -40°C < TJ < 125°C, Outputs loaded with 1 nF) TJ -40°C to 125°C Symbol Min Typ Max Units Output high short circuit pulsed current VDRV = 0 V, PW v 10 ms (Note 1) IDRVsource - 250 - mA Output low short circuit pulsed current VDRV = Vcc, PW v 10 ms (Note 1) Rating OUTPUT SECTION IDRVsink - 500 - mA Output resistor (Typical value @ 25°C) Source ROH - 30 60 W Output resistor (Typical value @ 25°C) Sink ROL - 10 20 W High level output voltage, VBIAS-VDRV_XX @ IDRV_XX = 20 mA VDRV_H - 0.7 1.6 V Low level output voltage VDRV_XX @ IDRV_XX = 20 mA VDRV_L - 0.2 0.6 V Turn-on propagation delay (Vbridge = 0 V) tON - 100 170 ns Turn-off propagation delay (Vbridge = 0 V or 50 V) (Note 2) tOFF - 100 170 ns Output voltage rise time (from 10% to 90% @ Vcc = 15 V) with 1 nF load tr - 85 160 ns Output voltage fall time (from 90% to 10% @VCC = 15 V) with 1 nF load tf - 35 75 ns Propagation delay matching between the High side and the Low side @ 25°C (Note 3) Dt - 20 35 ns Internal fixed dead time (Note 4) DT 65 100 190 ns Minimum input width that changes the output tPW1 - - 50 ns Maximum input width that does not change the output tPW2 20 - - ns Low level input voltage threshold VIN - - 0.8 V Input pull-down resistor (VIN < 0.5 V) RIN - 200 - kW High level input voltage threshold VIN 2.3 - - V Logic “1” input bias current @ VIN_XX = 5 V @ 25°C IIN+ - 5 25 mA Logic “0” input bias current @ VIN_XX = 0 V @ 25°C IIN- - - 2.0 mA DYNAMIC OUTPUT SECTION INPUT SECTION SUPPLY SECTION Vcc UV Start-up voltage threshold Vcc_stup 8.0 8.9 9.9 V Vcc_shtdwn 7.3 8.2 9.1 V Vcc_hyst 0.3 0.7 - V Vboot_stup 8.0 8.9 9.9 V Vboot UV Shut-down voltage threshold Vboot_shtdwn 7.3 8.2 9.1 V Hysteresis on Vboot Vboot_shtdwn 0.3 0.7 - V IHV_LEAK - 5 40 mA Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on both driver outputs) ICC1 - 4 5 mA Consumption in inhibition mode (Vcc = Vboot) ICC2 - 250 400 mA Vcc current consumption in inhibition mode ICC3 - 200 - mA Vboot current consumption in inhibition mode ICC4 - 50 - mA Vcc UV Shut-down voltage threshold Hysteresis on Vcc Vboot Start-up voltage threshold reference to bridge pin (Vboot_stup = Vboot - Vbridge) Leakage current on high voltage pins to GND (VBOOT = VBRIDGE = DRV_HI = 600 V) 1. 2. 3. 4. 5. Parameter guaranteed by design Turn-off propagation delay @ Vbridge = 600 V is guaranteed by design See characterization curve for Δt parameters variation on the full range temperature. Timing diagram definition see Figure 7. Timing diagram definition see Figure 5 and Figure 6. http://onsemi.com 4 NCP5304 IN_HI IN_LO DRV_HI DRV_LO Figure 4. Input/Output Timing Diagram 50% IN_HI (IN_LO) 50% tr ton 90% DRV_HI (DRV_LO) tf toff 90% 10% 10% Figure 5. Propagation Delay and Rise / Fall Time Definition 50% IN_HI 50% toff_HI ton_HI 90% DRV_HI 10% Matching Delay1=ton_HI-ton_LO Matching Delay2=toff_HI-toff_LO IN_LO 50% 50% toff_LO ton_LO 90% DRV_LO 10% Figure 6. Matching Propagation Delay http://onsemi.com 5 NCP5304 IN_HI IN_LO DRV_HI DRV_LO Internal Deadtime Internal Deadtime Figure 7. Input/Output Cross Conduction Output Protection Timing Diagram http://onsemi.com 6 NCP5304 CHARACTERIZATION CURVES 140 TON, PROPAGATION DELAY (ns) TON, PROPAGATION DELAY (ns) 140 120 TON High Side 100 80 60 40 TON Low Side 20 0 10 12 14 16 18 80 60 TON High Side 40 20 -20 0 40 60 80 100 TEMPERATURE (°C) Figure 8. Turn ON Propagation Delay vs. Supply Voltage (VCC = VBOOT) Figure 9. Turn ON Propagation Delay vs. Temperature 120 120 120 TOFF Low Side 100 80 60 TOFF High Side 40 20 12 14 16 18 100 TOFF Low Side 80 60 TOFF High Side 40 20 0 -40 20 -20 0 VCC, VOLTAGE (V) 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 11. Turn OFF Propagation Delay vs. Temperature Figure 10. Turn OFF Propagation Delay vs. Supply Voltage (VCC = VBOOT) 140 160 TOFF PROPAGATION DELAY (ns) TON, PROPAGATION DELAY (ns) 20 VCC, VOLTAGE (V) TOFF, PROPAGATION DELAY (ns) TOFF, PROPAGATION DELAY (ns) 100 0 -40 20 140 0 10 TON Low Side 120 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 0 10 20 30 40 50 0 10 20 30 40 BRIDGE PIN VOLTAGE (V) BRIDGE PIN VOLTAGE (V) Figure 12. High Side Turn ON Propagation Delay vs. VBRIDGE Voltage Figure 13. High Side Turn OFF Propagation Delay vs. VBRIDGE Voltage http://onsemi.com 7 50 NCP5304 160 140 120 tr High Side 120 TON, RISETIME (ns) TON, RISETIME (ns) 140 100 80 60 40 100 80 60 tr Low Side 20 14 16 18 0 -40 20 45 60 80 100 120 tf Low Side 40 60 tf Low Side 40 30 35 30 25 20 tf High Side 15 tf High Side 10 10 5 12 14 16 18 0 -40 20 -20 0 VCC, VOLTAGE (V) 20 40 60 80 100 120 TEMPERATURE (°C) Figure 16. Turn OFF Falltime vs. Supply Voltage (VCC = VBOOT) Figure 17. Turn OFF Falltime vs. Temperature 35 200 180 30 160 25 DEAD TIME (ns) PROPAGATION DELAY MATCHING (ns) 40 Figure 15. Turn ON Risetime vs. Temperature 70 0 10 20 Figure 14. Turn ON Risetime vs. Supply Voltage (VCC = VBOOT) 50 20 0 TEMPERATURE (°C) 80 50 -20 VCC, VOLTAGE (V) TOFF, FALLTIME (ns) TOFF, FALLTIME (ns) 12 tr Low Side 40 20 0 10 tr High Side 20 15 10 140 120 100 80 60 40 5 0 -40 20 -20 0 20 40 60 80 100 0 -40 120 -20 0 20 40 60 80 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 18. Propagation Delay Matching Between High Side and Low Side Driver vs. Temperature Figure 19. Dead Time vs. Temperature http://onsemi.com 8 120 1.4 1.4 1.2 1.2 LOW LEVEL INPUT VOLTAGE THRESHOLD (V) LOW LEVEL INPUT VOLTAGE THRESHOLD (V) NCP5304 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 0.6 0.4 0.2 -20 0 20 40 60 80 100 120 VCC, VOLTAGE (V) TEMPERATURE (°C) Figure 20. Low Level Input Voltage Threshold vs. Supply Voltage (VCC = VBOOT) Figure 21. Low Level Input Voltage Threshold vs. Temperature 2.5 HIGH LEVEL INPUT VOLTAGE THRESHOLD (V) HIGH LEVEL INPUT VOLTAGE THRESHOLD (V) 0.8 0.0 -40 20 2.5 2 1.5 1 0.5 0 10 12 14 16 18 2.0 1.5 1.0 0.5 0.0 -40 20 -20 0 20 40 60 80 100 120 VCC, VOLTAGE (V) TEMPERATURE (°C) Figure 22. High Level Input Voltage Threshold vs. Supply Voltage (VCC = VBOOT) Figure 23. High Level Input Voltage Threshold vs. Temperature LOGIC “0” INPUT CURRENT (mA) 4 LOGIC “0” INPUT CURRENT (mA) 1.0 3.5 3 2.5 2 1.5 1 0.5 0 10 12 14 16 18 20 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -40 VCC, VOLTAGE (V) -20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 24. Logic “0” Input Current vs. Supply Voltage (VCC = VBOOT) Figure 25. Logic “0” Input Current vs. Temperature http://onsemi.com 9 12 NCP5304 10 LOGIC “1” INPUT CURRENT (mA) LOGIC “1” INPUT CURRENT (mA) 8 7 6 5 4 3 2 1 6 4 2 0 0 10 12 14 16 18 20 -40 -20 0 40 60 80 100 120 VCC, VOLTAGE (V) TEMPERATURE (°C) Figure 27. Logic “1” Input Current vs. Temperature LOW LEVEL OUTPUT VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 10 12 14 16 18 0.8 0.6 0.4 0.2 0.0 -40 20 -20 0 VCC, VOLTAGE (V) 20 40 60 80 100 120 TEMPERATURE (°C) Figure 28. Low Level Output Voltage vs. Supply Voltage (VCC = VBOOT) Figure 29. Low Level Output Voltage vs. Temperature 1.6 1.6 HIGH LEVEL OUTPUT VOLTAGE (V) HIGH LEVEL OUTPUT VOLTAGE THRESHOLD (V) 20 Figure 26. Logic “1” Input Current vs. Supply Voltage (VCC = VBOOT) 1 LOW LEVEL OUTPUT VOLTAGE THRESHOLD (V) 8 1.2 0.8 0.4 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 12 14 16 18 20 VCC, VOLTAGE (V) -40 20 40 60 TEMPERATURE (°C) Figure 30. High Level Output Voltage vs. Supply Voltage (VCC = VBOOT) Figure 31. High Level Output Voltage vs. Temperature http://onsemi.com 10 -20 0 80 100 120 NCP5304 400 350 OUTPUT SOURCE CURRENT (mA) OUTPUT SOURCE CURRENT (mA) 400 Isrc High Side 300 250 200 Isrc Low Side 150 100 50 0 10 12 14 16 18 Isrc High Side 300 250 200 150 Isrc Low Side 100 50 0 -40 20 -20 0 40 60 80 100 120 TEMPERATURE (°C) Figure 32. Output Source Current vs. Supply Voltage (VCC = VBOOT) Figure 33. Output Source Current vs. Temperature OUTPUT SINK CURRENT (mA) 600 Isrc High Side 500 400 Isrc Low Side 300 200 100 0 10 Isrc High Side 500 400 300 Isrc Low Side 200 100 0 12 14 16 18 20 -40 -20 0 VCC, VOLTAGE (V) 20 40 60 80 100 120 TEMPERATURE (°C) Figure 34. Output Sink Current vs. Supply Voltage (VCC = VBOOT) Figure 35. Output Sink Current vs. Temperature 0.2 20 LEAKAGE CURRENT ON HIGH VOLTAGE PINS (600 V) to GND (mA) HIGH SIDE LEAKAGE CURRENT ON HV PINS TO GND (mA) 20 VCC, VOLTAGE (V) 600 OUTPUT SINK CURRENT (mA) 350 0.16 0.12 0.08 0.04 0 0 100 200 300 400 500 600 15 10 5 0 -40 -20 0 20 40 60 80 100 HV PINS VOLTAGE (V) TEMPERATURE (°C) Figure 36. Leakage Current on High Voltage Pins (600 V) to Ground vs. VBRIDGE Voltage (VBRIGDE = VBOOT = VDRV_HI) Figure 37. Leakage Current on High Voltage Pins (600 V) to Ground vs. Temperature (VBRIDGE = VBOOT = VDRV_HI = 600 V) http://onsemi.com 11 120 NCP5304 100 VBOOT CURRENT SUPPLY (mA) VBOOT SUPPLY CURRENT (mA) 100 80 60 40 20 0 0 4 8 12 16 80 60 40 20 0 -40 20 -20 0 60 80 100 120 Figure 39. VBOOT Supply Current vs. Temperature 240 400 200 VCC CURRENT SUPPLY (mA) VCC SUPPLY CURRENT (mA) 40 TEMPERATURE (°C) VBOOT, VOLTAGE (V) Figure 38. VBOOT Supply Current vs. Bootstrap Supply Voltage 160 120 80 40 0 0 4 8 12 16 300 200 100 0 -40 20 -20 0 VCC, VOLTAGE (V) 9.8 8.8 UVLO SHUTDOWN VOLTAGE (V) 9.0 VCC UVLO Startup 9.4 9.2 9.0 8.8 8.6 VBOOT UVLO Startup 8.4 8.2 8.0 -40 -20 0 20 40 60 40 60 80 100 120 Figure 41. VCC Supply Current vs. Temperature 10.0 9.6 20 TEMPERATURE (°C) Figure 40. VCC Supply Current vs. VCC Supply Voltage UVLO STARTUP VOLTAGE (V) 20 80 100 120 VCC UVLO Shutdown 8.6 8.4 8.2 8.0 VBOOT UVLO Shutdown 7.8 7.6 7.4 7.2 7.0 -40 TEMPERATURE (°C) -20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 42. UVLO Startup Voltage vs. Temperature Figure 43. UVLO Shutdown Voltage vs. Temperature http://onsemi.com 12 120 NCP5304 40 ICC+ IBOOT CURRENT SUPPLY (mA) ICC+ IBOOT CURRENT SUPPLY (mA) 25 CLOAD = 1 nF/Q = 15 nC 20 15 10 5 RGATE = 0 R to 22 R 0 CLOAD = 2.2 nF/Q = 33 nC 35 30 25 20 15 10 RGATE = 0 R to 22 R 5 0 0 100 200 300 400 500 600 0 100 SWITCHING FREQUENCY (kHz) Figure 44. ICC1 Consumption vs. Switching Frequency with 15 nC Load on Each Driver @ VCC = 15 V 300 400 500 600 Figure 45. ICC1 Consumption vs. Switching Frequency with 33 nC Load on Each Driver @ VCC = 15 V 120 ICC+ IBOOT CURRENT SUPPLY (mA) 70 ICC+ IBOOT CURRENT SUPPLY (mA) 200 SWITCHING FREQUENCY (kHz) CLOAD = 3.3 nF/Q = 50 nC 60 50 40 30 20 RGATE = 0 R to 22 R 10 0 CLOAD = 6.6 nF/Q = 100 nC 100 RGATE = 0 R 80 RGATE = 10 R 60 40 RGATE = 22 R 20 0 0 100 200 300 400 500 600 0 SWITCHING FREQUENCY (kHz) 100 200 300 400 500 600 SWITCHING FREQUENCY (kHz) Figure 46. ICC1 Consumption vs. Switching Frequency with 50 nC Load on Each Driver @ VCC = 15 V Figure 47. ICC1 Consumption vs. Switching Frequency with 100 nC Load on Each Driver @ VCC = 15 V http://onsemi.com 13 NCP5304 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 _ 8 _ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCP5304 PACKAGE DIMENSIONS 8 LEAD PDIP CASE 626-05 ISSUE L 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 -B1 4 F -A- NOTE 2 L C J -T- MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10_ 0.030 0.040 N SEATING PLANE D H DIM A B C D F G H J K L M N M K G 0.13 (0.005) M T A M B M The product described herein is covered by U.S. patents: 6,097,075; 7,176,723; 6,362,067. There may be some other patents pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free  USA/Canada Europe, Middle East and Africa Technical Support:  Phone: 421 33 790 2910 Japan Customer Focus Center  Phone: 81-3-5773-3850 http://onsemi.com 15 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative NCP5304/D