Transcript
Bulletin I2776 rev. E 04/99
P400 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate
40A
Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved
Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers.
Major Ratings and Characteristics Parameters
P400
Units
40
A
@ TC
80
°C
@ 50Hz
385
A
@ 60Hz
400
A
@ 50Hz
745
A2s
@ 60Hz
680
A2 s
7450
A2√s
VRRM
400 to 1200
V
VINS
2500
V
- 40 to 125
°C
ID
IFSM
I2t
I2√t
TJ
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P400 Series Bulletin I2776 rev. E 04/99
ELECTRICAL SPECIFICATIONS Voltage Ratings Type number
VRRM maximum repetitive VRSM maximum nonVDRM maximum peak reverse voltage repetitive peak reverse repetitive peak off-state voltage voltage V V V
P401, P421, P431
400
500
400
P402, P422, P432
600
700
600
P403, P423, P433
800
900
800
P404, P424, P434
1000
1100
1000
P405, P425, P435
1200
1300
1200
IRRM max. @ TJ max.
mA 10
On-state Conduction Parameter
P400
Units Conditions
ID
Maximum DC output current
40
A
@ TC = 80°C, full bridge circuits
I TSM
Max. peak one-cycle
385
A
t = 10ms
I FSM
non-repetitive on-state
400
t = 8.3ms
reapplied
or forward current
325
t = 10ms
100% VRRM
t = 8.3ms
reapplied
Sinusoidal half wave, Initial TJ = TJ max.
340 2
I t
Maximum I2t for fusing
745
2
A s
t = 10ms
No voltage
680
t = 8.3ms
reapplied
530
t = 10ms
100% VRRM
t = 8.3ms
reapplied
480 I 2√t
Maximum I2√t for fusing
No voltage
7450
A2√s
t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2√t . √tx
V T(TO)1 Low value of threshold voltage V T(TO)2 High value of threshold voltage r t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.83 1.03
V
(I > π x I T(AV)), TJ = TJ max.
Low level value of on-state slope resistance
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
9.61 mΩ
r t2
High level value of on-state (I > π x I T(AV)), TJ = TJ max.
7.01 slope resistance
V TM
Max. peak on-state or
V FM
forward voltage drop
di/dt
Maximum non repetitive rate of rise of turned on current
1.4
V
200
A/µs
TJ = 25°C, ITM = π x I T(AV) TJ = 25°C, ITM = π x I F(AV) TJ = 125°C from 0.67 VDRM ITM = π x I T(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs
IH
Maximum holding current
130
mA
TJ = 25°C anode supply = 6V, resistive load
IL
Maximum latching current
250
mA
TJ = 25°C anode supply = 6V, resistive load
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P400 Series Bulletin I2776 rev. E 04/99
Blocking Parameter dv/dt
P400
Units Conditions
Maximum critical rate of rise of 200
V/µs
TJ = 125°C, exponential to 0.67 VDRM gate open
10
mA
TJ = 125°C, gate open circuit
100
µA
TJ = 25°C
2500
V
off-state voltage IRRM
Max. peak reverse and off-state
IDRM
leakage current at VRRM, VDRM
IRRM
Max peak reverse leakage current
VINS
RMS isolation voltage
50Hz, circuit to base, all terminal shorted, TJ = 25°C, t = 1s
Triggering Parameter PGM
P400
Maximum peak gate power
PG(AV) Maximum average gate power IGM
Maximum peak gate current
- VGM
Maximum peak negative
2 2
IGD
W A
10
gate voltage VGT
Units Conditions
8
V
Maximum gate voltage required
3
to trigger
2
T J = 25°C
1
T J = 125°C
Maximum gate current
90
required to trigger
60
T J = 25°C
Anode Supply = 6V resistive load
T J = 125°C
Maximum gate voltage 0.2
V
TJ = 125°C, rated VDRM applied
2
mA
TJ = 125°C, rated VDRM applied
P400
Units
Conditions
that will not trigger IGD
Anode Supply = 6V resistive load
T J = - 40°C mA
35 VGD
T J = - 40°C
Maximum gate current that will not trigger
Thermal and Mechanical Specification Parameter TJ
Max. operating temperature range
-40 to 125
Tstg
Max. storage temperature range
-40 to 125
°C
RthJC Max. thermal resistance,
1.05
K/W
DC operation per junction
0.10
K/W
Mounting surface, smooth and greased
4
Nm
A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound
58 (2.0)
g (oz)
junction to case RthCS Max. thermal resistance, case to heatsink T
Mounting torque, base to heatsink
wt
Approximate weight
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P400 Series Bulletin I2776 rev. E 04/99
Circuit Type and Coding * Circuit "0"
Circuit "2"
Circuit "3"
Terminal Positions
G1
G1
Schematic diagram diagram
AC1
G3
G2
AC2 AC1
AC2
AC2
G4
G2
(-)
G1
AC1
(+)
(-)
Single Phase Hybrid Bridge CommonCathode
G2
(-)
(+)
Single Phase Hybrid Bridge Doubler
(+)
Single Phase All SCR Bridge
Basic series
P40.
P42.
P43.
With voltage suppression
P40.K
P42.K
P43.K
With free-wheeling diode
P40.W
-
-
P40.KW
-
-
With both voltage suppression and free-wheeling diode
* To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W
25 (0.98) MAX.
1.65 (0.06)
MAX.
12.7 (0.50) 12.7 (0.50)
15.5 (0.61)
63.5 (2.50) Faston 6.35x0.8 (0.25x0.03)
23.2 (0.91)
5.2 (0.20)
45 (1.77)
32.5 (1.28) MA X.
2.5 (0.10) MAX.
4.6 (0. 18)
4.6 (0.18)
Outline Table
33.8 (1.33) 48.7 (1.91)
All dimensions in millimeters (inches)
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P400 Series Bulletin I2776 rev. E 04/99
Rt
100 K/ W
=
1
A hS
0. 7
80
R
/W
5 K /W
P400 Series T J = 125°C
20
ta
/W
3K
40
el
2K
-D
1.5 K/ W
180° (Sine)
60
W K/
Maximum Total Power Loss (W)
120
10 K/ W
0 0
5
10
15
20
25
30
Total Output Current (A)
35
40 0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
180° 120° 90° 60° 30°
25 20
RMS Limit
15 10
Conduction angle P400 Series T J = 125°C Per Junction
5 0 0
Maximum Allowable Case Temperature (°C)
Maximum Average On-state Power Loss (W)
30
5
10
15
40 DC 180° 120° 90° 60° 30°
35 30 25 20
RMS Limit 15
Conduction Period
10 P400 Series T J = 125°C Per Junction
5 0 0
20
5
10
15
20
25
30
35
Average On-state Current (A)
Average On-sta te Current (A)
Fig. 2 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics 1000
130 Fully Turned-on
Instantaneous On-state Current (A)
Maximum Average On-state Power Loss (W)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
120 110
180° (Rect)
100 180° (Sine)
90 P400 Series Per Module
80 70 0
5
10
15
20
25
30
35
40
45
Total Output Current (A)
Fig. 4 - Current Ratings Characteristics
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T J = 25 °C T J = 125 °C
100
10 P400 Series Per Junction
1 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
Fig. 5 - On-state Voltage Drop Characteristics
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P400 Series 350
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Bulletin I2776 rev. E 04/99 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
325 300 275 250 225 200
P400 Series Per Junction
175
10
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRM Reapplied
350
300
250
200 P400 Series Per Junction 150 0.01
150
1
400
100
0.1
1
Pulse Train Duration (s)
Number Of E qual Amplitude Half Cyc le Curre nt Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
10 Steady State Value: R thJC = 1.05 K/W (DC Operation) 1
P400 Series Per Junction
0.1
0.01 0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt : 10V, 20 ohms, tr <= 1µs b)Recommended load line for rated di/dt : 10 V, 65 ohms, tr <= 1µs
(1) (2) (3) (4)
PGM PGM PGM PGM
= = = =
100 W, tp = 500 µs 50 W, tp = 1 ms 20 W, tp = 25 ms 10 W, tp = 5 ms
10 (b)
VGD
(a)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
IGD 0.1 0.001
(4)
P400 Series 0.01
0.1
1
(3)
(2)
(1)
Frequency Limited By PG(AV) 10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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P400 Series Bulletin I2776 rev. E 04/99
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Data and specifications subject to change without notice.
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