Transcript
PD - 90882F
IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary Part Number Radiation Level IRHF9130 100K Rads (Si) IRHF93130 300K Rads (Si)
RDS(on) 0.30Ω 0.30Ω
ID -6.5A -6.5A
QPL Part Number JANSR2N7389 JANSF2N7389
International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features: n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight
Units -6.5 -4.1 -26 25 0.2 ±20 165 -6.5 2.5 -22 -55 to 150
A W W/°C
V mJ A mJ V/ns o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
g
For footnotes refer to the last page
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IRHF9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min
Typ Max Units
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 7.0
-100 100 45 10 25 30 50 70 70 —
Test Conditions
V
VGS = 0V, ID =-1.0mA
V/°C
Reference to 25°C, ID = -1.0mA VGS = -12V, I D = -4.1A➃ VGS = -12V, ID = -6.5A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -4.1A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -50V
Ω V S( ) Ω
Parameter
BVDSS Drain-to-Source Breakdown Voltage -100 — — ∆BV DSS/∆T J Temperature Coefficient of Breakdown — -0.112 — Voltage RDS(on) Static Drain-to-Source On-State — — 0.30 Resistance — — 0.35 VGS(th) Gate Threshold Voltage -2.0 — -4.0 g fs Forward Transconductance 2.5 — — IDSS Zero Gate Voltage Drain Current — — -25 — — -250
µA
nA nC
VDD = -50V, ID = -6.5A, VGS =-12V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1200 290 76
— — —
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀
— —
— —
-6.5 -26
A
VSD trr Q RR
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — —
— — —
-3.0 250 0.74
V nS µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -6.5A, VGS = 0V ➃ Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthJA
Junction-to-Case Junction-to-Ambient
Min Typ Max — —
— —
5.0 175
Units °C/W
Test Conditions Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-39) Diode Forward Voltage ➃
Units
300K Rads (Si)2
Test Conditions
Min
Max
Min
Max
-100 -2.0 — — — —
— -4.0 -100 100 -25 0.30
-100 -2.0 — — — —
— -5.0 -100 100 -25 0.30
µA Ω
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-4.1A
—
0.30
—
0.30
Ω
VGS = -12V, ID =-4.1A
—
-3.0
—
-3.0
V
VGS = 0V, IS = -6.5A
V nA
1. Part number IRHF9130 (JANSR2N7389) 2. Part number IRHF93130 (JANSF2N7389)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area Ion
LE T MeV/(mg/cm²))
Energy (MeV)
VD S(V)
Range (µm) @VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-100
-100
-100
-70
-60
Br
36.8
305
39
-100
-100
-70
-50
-40
I
59.9
345
32.8
-60
—
—
—
—
-120 -100 VDS
-80
Cu
-60
Br
-40
I
-20 0 0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHF9130
100
Pre-Irradiation
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
100
10
-5.0V
20µs PULSE WIDTH T = 25 C J
1 1
10
-5.0V
1
TJ = 150 ° C 10
V DS = -50V 20µs PULSE WIDTH 9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
8
10
100
Fig 2. Typical Output Characteristics
2.5
7
°
-VDS , Drain-to-Source Voltage (V)
100
6
J
1
100
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH T = 150 C
°
10
-VDS , Drain-to-Source Voltage (V)
5
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -6.5A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -12V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
1500
Ciss
1000
C oss 500
C rss
20
-VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHF9130
ID = -6.5
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0
0 1
10
0
100
10
20
30
40
50
60
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-80V VDS =-50V VDS =-20V
16
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1 0.2
100us 10
1ms
V GS = 0 V 1.0
1.8
2.6
3.4
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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4.2
1
TC = 25 ° C TJ = 150 ° C Single Pulse
1
10ms 10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRHF9130
Pre-Irradiation
7.0
RD
VDS VGS
6.0
D.U.T.
-I D , Drain Current (A)
RG
-
+
5.0
V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
4.0
3.0
Fig 10a. Switching Time Test Circuit 2.0 td(on)
1.0
tr
t d(off)
tf
VGS 10%
0.0 25
50
75
100
125
150
TC , Case Temperature ( ° C) 90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
0.50
1
0.20 0.10
0.05 0.02 0.1
0.01
0.01 0.00001
P DM
SINGLE PULSE (THERMAL RESPONSE)
t1
t2
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHF9130
L
VDS
tp
VD D A
IA S
D R IV E R 0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
-2 V V0GS
400
ID -2.9A -4.1A BOTTOM -6.5A TOP
300
200
100
0 25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
50KΩ
QG
-12V 12V
.2µF .3µF
-12V QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHF9130
Pre-Irradiation
Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=7.8mH Peak I L = -6.5A, VGS =-12V ➂ ISD ≤ -6.5A, di/dt ≤ -430A/µs, VDD ≤ -100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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