Transcript
APPLICATION NOTE
Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani (Taking charge of Silicon RF by MIYOSHI Electronics)
SUBJECT:
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
SUMMARY: This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics and Pout vs. Idq characteristics) at f=400 to 470MHz. -
Sample history: RD02MUS1B: Lot number “093AF-G”
-
Evaluate conditions: @f=400MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.) @f=435MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.) @f=470MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)
-
Results: Page 2-4 shows the Output Power, Drain Efficiency vs. Frequency data. Page 5-7 shows the Output Power, Power Gain, Drain Efficiency vs. Input Power data. Page 8-10 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Voltage data. Page 11-13 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current data. Page 14 shows the Input / Output Impedance vs. Frequency characteristics Page 15 shows the Equivalent Circuit and schematic for test fixture.
Application Note for Silicon RF Power Semiconductors 1/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.2A)
3.0
70 Pin=50mW Vdd=7.2V Idq=0.2A
Output Power Po(W) , Drain Current Idd(A)
2.5
60
2.0
50
1.5
40 Po
1.0
30
Idd
0.5
Drain Efficiency ηd(%)
ηd
20
0.0
10 380
390
400
410
420
430
440
450
460
470
480
490
Frequency(MHz)
Freq. (MHz) 380 390 400 410 420 430 440 450 460 470 480 490
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Output Power (dBm) (W) 32.2 1.64 32.8 1.92 33.2 2.11 33.4 2.18 33.4 2.17 33.2 2.11 33.1 2.03 32.9 1.93 32.7 1.84 32.5 1.76 32.3 1.68 32.1 1.61
Gp (dB) 15.2 15.8 16.2 16.4 16.4 16.2 16.1 15.9 15.7 15.5 15.3 15.1
Idd (A) 0.54 0.55 0.55 0.54 0.52 0.50 0.48 0.47 0.45 0.45 0.44 0.44
ηd (%) 42.1 48.0 52.9 56.2 58.0 58.6 58.6 57.7 56.5 55.0 52.9 50.9
PAE (%) 40.8 46.8 51.7 54.9 56.6 57.2 57.1 56.2 55.0 53.4 51.4 49.3
Return Loss
(dB) -4.4 -6.2 -8.9 -13.0 -16.1 -13.6 -10.6 -8.7 -7.6 -7.0 -6.7 -6.5
2fo (dBc) -24.8 -26.4 -27.7 -28.6 -29.6 -32.7 -39.3 -47.1 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 2/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.3A)
3.0
70 Pin=50mW Vdd=7.2V Idq=0.3A
60
2.0
50 ηd
1.5
40
Po
1.0
30
Idd
0.5
Drain Efficiency ηd(%)
Output Power Po(W) , Drain Current Idd(A)
2.5
20
0.0
10 380
390
400
410
420
430
440
450
460
470
480
490
Frequency(MHz)
Freq. (MHz) 380 390 400 410 420 430 440 450 460 470 480 490
Vgg (V) 3.07 3.07 3.07 3.07 3.07 3.07 3.07 3.07 3.07 3.07 3.07 3.07
Output Power (dBm) (W) 33.0 1.99 33.5 2.24 33.8 2.38 33.8 2.41 33.7 2.37 33.6 2.28 33.4 2.19 33.2 2.10 33.0 2.01 32.8 1.92 32.7 1.84 32.5 1.77
Gp (dB) 16.0 16.5 16.8 16.8 16.8 16.6 16.4 16.2 16.0 15.8 15.7 15.5
Idd (A) 0.61 0.61 0.60 0.58 0.55 0.53 0.51 0.50 0.49 0.48 0.48 0.48
ηd (%) 45.5 51.0 55.2 57.9 59.4 59.7 59.5 58.6 57.2 55.4 53.4 51.2
PAE (%) 44.4 49.8 54.1 56.7 58.1 58.4 58.1 57.2 55.8 54.0 51.9 49.8
Return Loss
(dB) -4.9 -6.9 -10.0 -14.5 -16.1 -12.5 -9.6 -7.9 -6.9 -6.5 -6.1 -6.0
2fo (dBc) -26.2 -27.3 -28.3 -29.1 -30.0 -33.0 -39.6 -47.4 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 3/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.4A)
3.0
70 Pin=50mW Vdd=7.2V Idq=0.4A
60
2.0
50 ηd Po
1.5
40
Idd
1.0
30
0.5
Drain Efficiency ηd(%)
Output Power Po(W) , Drain Current Idd(A)
2.5
20
0.0
10 380
390
400
410
420
430
440
450
460
470
480
490
Frequency(MHz)
Freq. (MHz) 380 390 400 410 420 430 440 450 460 470 480 490
Vgg (V) 3.21 3.21 3.21 3.21 3.21 3.21 3.21 3.21 3.21 3.21 3.21 3.21
Output Power (dBm) (W) 33.5 2.25 33.9 2.46 34.1 2.56 34.1 2.56 34.0 2.50 33.8 2.40 33.6 2.30 33.4 2.21 33.3 2.12 33.1 2.04 32.9 1.96 32.8 1.89
Gp (dB) 16.5 16.9 17.1 17.1 17.0 16.8 16.6 16.4 16.3 16.1 15.9 15.8
Idd (A) 0.66 0.65 0.63 0.60 0.58 0.55 0.54 0.52 0.52 0.51 0.51 0.52
ηd (%) 47.6 52.7 56.5 58.9 60.1 60.1 59.7 58.6 57.1 55.2 53.0 50.7
PAE (%) 46.6 51.6 55.4 57.7 58.9 58.9 58.4 57.2 55.7 53.9 51.7 49.4
Return Loss
(dB) -5.3 -7.5 -11.0 -15.9 -15.6 -11.5 -8.9 -7.3 -6.5 -6.0 -5.8 -5.7
2fo (dBc) -27.0 -27.8 -28.6 -29.3 -30.1 -33.1 -39.7 -47.3 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 4/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=400MHz, Vdd=7.2V, Idq=0.2A)
40
60
30
50 Po
25
40
20
30 GP
15
Drain Efficiency ηd (%)
Output Power Po(dBm) , Power Gain GP(dB)
35
70 f=400MHz Vdd=7.2V Idq=0.2A
20 ηd
10
10 0
5
10
15
20
Input Power Pin(dBm)
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Pin (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Pin (W) 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.008 0.010 0.013 0.016 0.020 0.025 0.032 0.040 0.050 0.063 0.080 0.100
Output Power (dBm) (W) 20.1 0.10 21.0 0.13 21.9 0.16 22.8 0.19 23.7 0.23 24.6 0.29 25.4 0.35 26.3 0.42 27.1 0.52 28.0 0.63 28.8 0.76 29.7 0.92 30.4 1.11 31.1 1.30 31.8 1.51 32.3 1.71 32.8 1.91 33.2 2.10 33.6 2.28 33.9 2.45 34.1 2.60
Gp (dB) 20.1 20.0 19.9 19.8 19.7 19.6 19.4 19.3 19.1 19.0 18.8 18.7 18.4 18.1 17.8 17.3 16.8 16.2 15.6 14.9 14.1
Idd (A) 0.22 0.22 0.23 0.23 0.24 0.25 0.27 0.28 0.30 0.33 0.35 0.38 0.41 0.44 0.47 0.50 0.53 0.55 0.58 0.60 0.62
ηd (%) 6.5 8.0 9.6 11.4 13.4 15.7 18.2 20.8 23.6 26.8 30.1 33.6 37.2 40.8 44.2 47.3 50.4 52.9 55.2 57.1 58.7
P.A.E. Return Loss (%) (dB) 6.5 -9.4 7.9 -9.3 9.5 -9.2 11.3 -9.0 13.2 -8.9 15.6 -8.8 18.0 -8.6 20.6 -8.5 23.3 -8.4 26.4 -8.3 29.7 -8.3 33.1 -8.4 36.7 -8.5 40.2 -8.7 43.5 -8.8 46.5 -8.8 49.3 -8.9 51.6 -8.9 53.6 -8.9 55.2 -9.0 56.4 -9.0
2fo (dBc) -36.1 -35.3 -34.2 -33.6 -32.2 -31.2 -30.4 -29.4 -28.8 -28.5 -28.0 -27.7 -27.7 -27.8 -27.8 -27.6 -27.7 -27.7 -27.6 -27.5 -27.5
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 5/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=435MHz, Vdd=7.2V, Idq=0.2A)
Output Power Po(dBm) , Power Gain GP(dB)
35
70
f=435MHz Vdd=7.2V Idq=0.2A
60
30
50
Po
25
40
20
30
Drain Efficiency ηd (%)
40
GP
15
20 ηd
10
10 0
5
10
15
20
ηd (%) 6.7 8.3 10.1 12.2 14.7 17.4 20.6 24.1 27.7 31.6 35.5 39.5 43.3 47.0 50.5 53.6 56.3 58.8 60.6 62.2 63.6
P.A.E. Return Loss (%) (dB) 6.7 -10.2 8.2 -10.8 10.0 -10.3 12.1 -10.3 14.5 -10.4 17.3 -10.5 20.4 -10.5 23.8 -10.6 27.4 -10.7 31.2 -10.7 35.1 -10.6 39.0 -10.5 42.7 -10.4 46.3 -10.5 49.7 -10.7 52.6 -11.0 55.2 -11.4 57.3 -11.9 58.9 -12.5 60.1 -13.1 61.0 -13.6
Input Power Pin(dBm)
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Pin (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Pin (W) 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.008 0.010 0.013 0.016 0.020 0.025 0.032 0.040 0.050 0.063 0.079 0.100
Output Power (dBm) (W) 20.1 0.10 21.1 0.13 22.1 0.16 23.0 0.20 23.9 0.25 24.9 0.31 25.8 0.38 26.7 0.47 27.6 0.57 28.5 0.70 29.3 0.84 30.0 1.01 30.7 1.18 31.4 1.37 31.9 1.56 32.4 1.74 32.8 1.91 33.2 2.07 33.4 2.21 33.7 2.33 33.9 2.44
Gp (dB) 20.1 20.1 20.1 20.0 19.9 19.9 19.8 19.7 19.6 19.4 19.3 19.0 18.7 18.4 17.9 17.4 16.8 16.2 15.4 14.7 13.9
Idd (A) 0.21 0.22 0.22 0.23 0.23 0.24 0.26 0.27 0.29 0.31 0.33 0.35 0.38 0.40 0.43 0.45 0.47 0.49 0.51 0.52 0.53
2fo (dBc) <-55 <-55 -42.8 -41.7 -40.6 -39.8 -38.9 -38.1 -37.3 -36.8 -36.2 -36.1 -36.1 -36.0 -36.1 -35.8 -35.9 -35.7 -35.5 -35.3 -35.2
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 6/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=470MHz, Vdd=7.2V, Idq=0.2A)
Output Power Po(dBm) , Power Gain GP(dB)
35
70
f=470MHz Vdd=7.2V Idq=0.2A
60
30
50 Po
25
40
20
30
15
Drain Efficiency ηd (%)
40
20
GP ηd
10
10 0
5
10
15
20
ηd (%) 4.6 5.6 7.0 8.6 10.5 12.8 15.3 18.4 21.8 25.4 29.4 33.5 37.5 41.5 45.2 48.8 52.2 55.0 57.4 59.5 61.1
P.A.E. Return Loss (%) (dB) 4.5 -6.6 5.6 -6.6 6.9 -6.6 8.5 -6.6 10.4 -6.7 12.6 -6.7 15.1 -6.6 18.1 -6.6 21.4 -6.7 25.0 -6.7 29.0 -6.8 32.9 -6.7 36.8 -6.7 40.7 -6.7 44.3 -6.7 47.7 -6.7 50.9 -6.8 53.4 -7.0 55.5 -7.2 57.2 -7.5 58.3 -7.7
Input Power Pin(dBm)
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Pin (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Pin (W) 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.008 0.010 0.013 0.016 0.020 0.025 0.032 0.040 0.050 0.063 0.080 0.100
Output Power (dBm) (W) 18.3 0.07 19.3 0.09 20.3 0.11 21.3 0.13 22.3 0.17 23.2 0.21 24.1 0.26 25.1 0.32 26.0 0.40 26.9 0.49 27.8 0.61 28.7 0.74 29.5 0.89 30.2 1.05 30.9 1.23 31.5 1.41 32.0 1.59 32.5 1.76 32.8 1.92 33.2 2.07 33.4 2.19
Gp (dB) 18.3 18.3 18.3 18.3 18.2 18.2 18.1 18.1 18.0 17.9 17.8 17.7 17.5 17.2 16.9 16.5 16.0 15.5 14.8 14.1 13.4
Idd (A) 0.21 0.21 0.21 0.22 0.22 0.23 0.24 0.24 0.26 0.27 0.29 0.31 0.33 0.35 0.38 0.40 0.42 0.45 0.47 0.48 0.50
2fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 7/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=400MHz, Pin=50mW, Idq=0.2A)
Output Power Po(W) , Drain Current Idd(A)
6
80
f=400MHz , Pin=50mW Idq=0.2A
70
5
60 ηd
4
50
3
40 Po
2
30
Drain Efficiency ηd(%)
7
Idd 1
20
0
10 1
3
5
7
9
11
13
Drain Voltage Vdd(V) Vdd (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Output Power (dBm) (W) 17.2 0.05 20.8 0.12 23.4 0.22 25.4 0.34 26.9 0.49 28.2 0.66 29.3 0.86 30.2 1.06 31.0 1.27 31.7 1.48 32.2 1.68 32.7 1.87 33.1 2.05 33.4 2.21 33.7 2.35 33.9 2.47 34.1 2.57 34.2 2.65 34.3 2.72 34.4 2.77 34.5 2.80 34.5 2.82 34.5 2.83 34.5 2.83 34.5 2.82
Idd (A) 0.09 0.13 0.18 0.22 0.27 0.31 0.35 0.39 0.43 0.46 0.49 0.52 0.55 0.57 0.59 0.60 0.62 0.63 0.64 0.65 0.65 0.66 0.66 0.66 0.66
ηd (%) 59.4 61.1 62.3 62.3 62.2 61.8 61.4 60.4 59.5 58.3 56.9 55.3 53.8 52.0 50.2 48.3 46.4 44.6 42.7 40.9 39.1 37.4 35.8 34.2 32.7
P.A.E. Return Loss (%) (dB) 4.3 -9.8 36.0 -10.0 48.0 -10.1 53.3 -10.1 55.8 -10.0 57.2 -9.9 57.8 -9.8 57.6 -9.7 57.1 -9.5 56.3 -9.4 55.2 -9.3 53.8 -9.1 52.4 -9.0 50.8 -8.8 49.2 -8.7 47.3 -8.6 45.5 -8.5 43.7 -8.4 41.9 -8.3 40.2 -8.2 38.4 -8.1 36.7 -8.0 35.1 -8.0 33.6 -7.9 32.1 -7.9
2fo (dBc) -30.3 -30.2 -29.8 -29.6 -29.4 -29.5 -28.8 -28.8 -28.7 -28.5 -28.3 -28.0 -27.7 -27.5 -27.1 -26.9 -26.5 -26.3 -26.1 -25.9 -25.6 -25.5 -25.3 -25.0 -24.8
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 8/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=435MHz, Pin=50mW, Idq=0.2A)
Output Power Po(W) , Drain Current Idd(A)
6
80
f=435MHz , Pin=50mW Idq=0.2A
70
5
60 ηd
4
50
3
40 Po
2
30
Drain Efficiency ηd(%)
7
Idd 1
20
0
10 1
3
5
7
9
11
13
Drain Voltage Vdd(V) Vdd (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Output Power (dBm) (W) 16.8 0.05 20.4 0.11 22.9 0.19 24.8 0.30 26.4 0.43 27.7 0.58 28.8 0.76 29.7 0.94 30.6 1.14 31.3 1.36 31.9 1.57 32.5 1.78 33.0 2.00 33.4 2.20 33.8 2.40 34.1 2.59 34.4 2.75 34.6 2.91 34.8 3.05 35.0 3.18 35.2 3.28 35.3 3.37 35.4 3.45 35.4 3.50 35.5 3.55
Idd (A) 0.09 0.12 0.16 0.19 0.23 0.26 0.30 0.33 0.37 0.40 0.43 0.46 0.48 0.51 0.53 0.55 0.57 0.58 0.60 0.61 0.62 0.63 0.64 0.65 0.65
ηd (%) 55.7 59.9 61.8 62.9 63.3 63.4 63.5 63.1 62.7 62.1 61.2 60.3 59.3 58.1 56.9 55.6 54.1 52.7 51.2 49.6 48.1 46.5 45.0 43.4 41.9
P.A.E. Return Loss (%) (dB) -1.6 -17.4 32.4 -16.3 45.7 -15.3 52.5 -14.6 56.0 -14.0 57.9 -13.5 59.3 -13.1 59.7 -12.7 59.9 -12.5 59.8 -12.3 59.3 -12.1 58.6 -12.0 57.8 -12.0 56.8 -11.9 55.7 -11.9 54.5 -11.9 53.2 -12.0 51.8 -12.0 50.3 -12.1 48.9 -12.2 47.4 -12.4 45.8 -12.5 44.3 -12.6 42.8 -12.8 41.3 -13.0
2fo (dBc) -35.7 -36.4 -36.6 -36.8 -36.9 -36.5 -36.5 -36.3 -36.4 -36.1 -35.9 -35.8 -35.7 -35.5 -35.4 -35.2 -35.0 -34.8 -34.3 -34.1 -33.8 -33.4 -33.4 -33.0 -32.8
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 9/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=470MHz, Pin=50mW, Idq=0.2A)
Output Power Po(W) , Drain Current Idd(A)
6
80
f=470MHz , Pin=50mW Idq=0.2A
70
5
60
4
50
ηd
3
40 Po
2
30
Drain Efficiency ηd(%)
7
Idd 1
20
0
10 1
3
5
7
9
11
13
Drain Voltage Vdd(V) Vdd (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0
Vgg (V) 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88 2.88
Output Power (dBm) (W) 16.6 0.05 20.1 0.10 22.6 0.18 24.5 0.28 26.0 0.40 27.3 0.54 28.4 0.69 29.3 0.85 30.1 1.01 30.8 1.19 31.3 1.36 31.9 1.53 32.3 1.70 32.7 1.86 33.0 2.02 33.3 2.16 33.6 2.29 33.8 2.40 34.0 2.51 34.2 2.60 34.3 2.68 34.4 2.75 34.5 2.81 34.6 2.86 34.6 2.89
Idd (A) 0.09 0.13 0.16 0.19 0.23 0.26 0.29 0.32 0.34 0.37 0.39 0.42 0.44 0.46 0.48 0.49 0.51 0.52 0.53 0.54 0.55 0.56 0.56 0.57 0.57
ηd (%) 50.9 55.1 57.5 58.8 59.6 59.9 59.9 59.6 59.2 58.5 57.8 56.7 55.5 54.3 53.2 51.8 50.4 48.9 47.5 46.0 44.6 43.1 41.7 40.4 39.0
P.A.E. Return Loss (%) (dB) -4.0 -8.9 28.4 -8.6 41.7 -8.2 48.4 -8.0 52.2 -7.7 54.2 -7.5 55.5 -7.4 56.1 -7.3 56.3 -7.2 56.0 -7.1 55.6 -7.0 54.8 -7.0 53.9 -7.0 52.8 -7.0 51.8 -7.1 50.6 -7.1 49.3 -7.1 47.9 -7.2 46.5 -7.3 45.1 -7.3 43.7 -7.4 42.4 -7.5 41.0 -7.6 39.7 -7.7 38.3 -7.8
2fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 10/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=400MHz, Pin=50mW, Vdd=7.2V)
70
f=400MHz ,Pin=50mW Vdd=7.2V
5
60
4
50 ηd
3
40
Po 2
30
Drain Efficiency ηd(%)
Output Power Po(W) , Drain Current Idd(A)
6
Ids 1
20
0
10 0.0
0.2
0.4
0.6
Drain Quiet Current Idq(A)
Idq (A) 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.02 0.03 0.04 0.06 0.09 0.12 0.16 0.20 0.26 0.32 0.38 0.45 0.52 0.60
VGG (V) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Output Power (dBm) (W) 22.5 0.18 24.0 0.25 25.2 0.33 26.3 0.42 27.3 0.53 28.2 0.66 29.1 0.81 29.8 0.95 30.5 1.11 31.1 1.28 31.6 1.45 32.1 1.62 32.5 1.80 32.9 1.97 33.3 2.12 33.6 2.28 33.8 2.42 34.1 2.55 34.3 2.66 34.4 2.77 34.6 2.86
Idd (A) 0.13 0.15 0.18 0.21 0.24 0.28 0.31 0.34 0.38 0.41 0.44 0.47 0.50 0.53 0.56 0.58 0.61 0.63 0.65 0.66 0.68
ηd (%) 19.4 22.4 25.3 28.0 30.7 33.5 36.2 38.7 41.2 43.7 45.8 48.0 49.8 51.5 53.0 54.4 55.6 56.5 57.3 57.9 58.3
P.A.E. Return Loss (%) (dB) 14.1 -4.5 18.0 -4.7 21.5 -4.9 24.7 -5.1 27.8 -5.3 31.0 -5.6 33.9 -5.8 36.7 -6.1 39.4 -6.4 42.0 -6.8 44.2 -7.2 46.5 -7.6 48.4 -8.0 50.2 -8.5 51.8 -9.0 53.2 -9.6 54.4 -10.2 55.4 -10.8 56.2 -11.5 56.8 -12.3 57.2 -13.2
2fo (dBc) -16.4 -17.0 -17.9 -18.6 -19.7 -20.6 -21.4 -22.4 -23.4 -24.2 -25.0 -25.9 -26.6 -27.2 -27.7 -28.1 -28.4 -28.5 -28.7 -28.7 -28.5
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 11/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=435MHz, Pin=50mW, Vdd=7.2V)
70
f=435MHz ,Pin=50mW Vdd=7.2V
Output Power Po(W) , Drain Current Idd(A)
5
60
4
50
ηd 3
40
Po 2
30
Drain Efficiency ηd(%)
6
Ids 1
20
0
10 0.0
0.1
0.2
0.3
0.4
0.5
0.6
Drain Quiet Current Idq(A)
Idq (A) 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.02 0.03 0.04 0.06 0.09 0.12 0.16 0.20 0.26 0.32 0.38 0.45 0.52 0.60
VGG (V) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Output Power (dBm) (W) 26.5 0.45 27.4 0.55 28.1 0.65 28.8 0.75 29.4 0.87 30.0 0.99 30.5 1.12 30.9 1.24 31.4 1.37 31.8 1.50 32.1 1.62 32.4 1.75 32.7 1.86 33.0 1.98 33.2 2.08 33.4 2.18 33.6 2.27 33.7 2.34 33.8 2.42 34.0 2.49 34.1 2.54
Idd (A) 0.19 0.21 0.23 0.26 0.28 0.30 0.33 0.35 0.37 0.39 0.41 0.44 0.46 0.47 0.49 0.51 0.53 0.54 0.56 0.57 0.59
ηd (%) 33.3 36.2 38.7 41.0 43.3 45.4 47.6 49.6 51.4 52.9 54.4 55.7 56.9 57.9 58.7 59.4 59.8 60.2 60.3 60.2 59.9
P.A.E. Return Loss (%) (dB) 29.8 -13.2 33.0 -13.6 35.8 -14.0 38.4 -14.3 40.8 -14.5 43.2 -14.7 45.5 -14.8 47.6 -14.7 49.5 -14.5 51.2 -14.3 52.8 -13.9 54.1 -13.5 55.4 -12.9 56.5 -12.4 57.3 -11.8 58.0 -11.3 58.5 -10.7 58.9 -10.1 59.0 -9.6 59.0 -9.1 58.7 -8.6
2fo (dBc) -27.0 -27.6 -28.3 -29.0 -29.5 -30.4 -31.1 -31.9 -32.5 -33.2 -33.8 -34.5 -34.9 -35.4 -35.6 -35.9 -36.0 -35.9 -36.0 -36.0 -35.8
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 12/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=470MHz, Pin=50mW, Vdd=7.2V)
70
f=470MHz ,Pin=50mW Vdd=7.2V
5
60
4
50
ηd 3
40
Po 2
30
Drain Efficiency ηd(%)
Output Power Po(W) , Drain Current Idd(A)
6
Ids 1
20
0
10 0.0
0.1
0.2
0.3
0.4
0.5
0.6
Drain Quiet Current Idq(A)
Idq (A) 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.02 0.03 0.04 0.06 0.09 0.12 0.16 0.20 0.26 0.32 0.38 0.45 0.52 0.60
VGG (V) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Output Power (dBm) (W) 25.7 0.37 26.6 0.46 27.4 0.55 28.0 0.63 28.6 0.73 29.2 0.83 29.7 0.93 30.2 1.04 30.6 1.14 31.0 1.25 31.3 1.36 31.7 1.47 32.0 1.57 32.2 1.67 32.5 1.77 32.7 1.86 32.9 1.95 33.1 2.03 33.2 2.11 33.4 2.18 33.5 2.23
Idd (A) 0.16 0.19 0.21 0.22 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 0.51 0.53 0.56 0.59
ηd (%) 31.6 34.6 37.1 39.3 41.4 43.5 45.3 47.2 48.6 50.2 51.4 52.6 53.6 54.3 54.9 55.4 55.5 55.5 55.1 54.1 52.5
P.A.E. Return Loss (%) (dB) 27.6 -12.0 31.0 -11.7 33.8 -11.3 36.3 -10.9 38.6 -10.5 40.9 -10.1 42.9 -9.8 45.0 -9.4 46.5 -9.0 48.2 -8.7 49.5 -8.3 50.8 -8.0 51.9 -7.6 52.7 -7.3 53.4 -7.0 53.9 -6.7 54.1 -6.4 54.2 -6.1 53.8 -5.8 52.9 -5.6 51.3 -5.4
2fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
3fo (dBc) <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55 <-55
Application Note for Silicon RF Power Semiconductors 13/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Input / Output Impedance vs. Frequency characteristics Zout* (f=400,435,470MHz)
f(MHz) Zout*(ohm) 400 5.82+j6.03 435 6.68+j6.85 470 7.02+j6.58 Zout* : Complex conjugate of Output impedance.
---------------------------------------------------------------------------------------------------------------------------------------------Zin* (f=400,435,470MHz)
f(MHz) 400 435 470 Zin*
Zin*(ohm) 4.16+j9.09 4.55+j10.54 4.95+j11.66
: Complex conjugate of Iutput impedance.
Application Note for Silicon RF Power Semiconductors 14/15
RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
- AN-UHF-108-A-
RD02MUS1B Equivalent Circuit (@f=400-470MHz)
W
W
Note:Board material – Glass-Epoxy Substrate. Microstrip line width=1.3mm/50 OHM,er:4.8,t=0.8mm. W:Line width=1.0mm. Parts Type
Capacitor
Resistance
Inductance
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 R1 R2 R3 L1
Value 300pF 9pF 18pF 47pF 47pF 33pF 12pF 10pF 100pF 22000pF 22000pF 22μF 5.1k OHM 1.5 OHM 270 OHM 6.8nH
Type name GRM1882C1H301JA01D GRM1882C1H9R0DZ01D GRM1882C1H180JA01D GRM1882C1H470JA01D GRM1882C1H470JA01D GRM1882C1H330JA01D GRM1882C1H120DZ01D GRM1882C1H100JA01D GRM1882C1H101JA01D GRM216R11H223KA01E GRM216R11H223KA01E A0603 CR20-512JB CR16-1R5JB RPC10 271-J LQG18HN6N8J00D
Vender Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. Murata Manufacturing Co.,Ltd. NICHICON CORPORATION Hokuriku Electric Industry Co.,Ltd. Hokuriku Electric Industry Co.,Ltd. TAIYOSHA ELECTRIC Co.,Ltd. Murata Manufacturing Co.,Ltd.
L2
3.6nH
LLQ1608-F3N6
TOKO Co.,Ltd.
L3
34.5nH Enameled wire 5Turns, Diameter:0.40mm,φ2.46mm(the out side diameter)
4005A
yc corporation Co.,Ltd.
L4
6.6nH Enameled wire 2Turns, Diameter:0.23mm,φ1.62mm(the out side diameter)
2302S
yc corporation Co.,Ltd.
RD02MUS1B test fixture (@f=400- 470MHz) Vgg
GND
RF-in
Vdd
GND
RF-out
Application Note for Silicon RF Power Semiconductors 15/15
