Preview only show first 10 pages with watermark. For full document please download

Pdf: 507kb

   EMBED

Share

Transcript

APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-049 Date : 27th May 2011 Prepared : E.Akiyama K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by MIYOSHI Electronics) SUBJECT: RD70HUF2 single-stage amplifier with f=135-175MHz evaluation board Features: - The evaluation board for RD70HUF2 - Frequency: - Typical input power: - Typical output power: - Quiescent current: Total is 1000mA, 500mA per one FET chip - Operating current: approx. 10A - Surface-mounted RF power amplifier structure 135-175MHz 4W 80W Gate Bias 1 (Vgg1) Gate Bias 2 (Vgg2) Drain Bias RF IN RF OUT PCB L=75mm W=46mm Application Note for Silicon RF Power Semiconductors 1/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- Contents Page 1. Equivalent Circuitry 2. PCB Layout ------------------------------------------------------------ 3 ----------------------------------------------------------------------- 4 3. Standard Land Pattern Dimensions -------------------------------------- 4. Component List and Standard Deliverable 5. Thermal Design of Heat Sink 6. Typical RF Characteristics 6 ---------------------------------------7 ------------------------------------------------ 8 ---------------------------------------------------- 9 6-1. Frequency vs. ------------------------------------------------------------ 9 6-2. RF Power vs. ------------------------------------------------------------- 10 6-3. Drain Quiescent Current vs. 6-4. DC Power Supply vs. ---------------------------------------- 14 ------------------------------------------------- 15 Application Note for Silicon RF Power Semiconductors 2/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 1. Equivalent Circuitry Application Note for Silicon RF Power Semiconductors 3/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- PCB Layout BOARD OUTLINE: 75.0*46.0(mm) 330p 0ohm 0ohm TOP VIEW (Layer 1) 0.1u 390p 390p 5.6K 56p 12n 330p 8004C 12n 3.9p 3.9p 3.9p 8.2p 56p 15p 3.9p 8002C 3.9p 0.1u 5.6K 68p 3.9p 68p 56p 68p 22p 8003C 68p 68p 68p BOTTOM VIEW (Layer 4), Perspective through Top View 6.6n 220p 130p 5 .6ohm* 2 130p 1.5n 1.5n 130p 6.6n 220p 2. 5 .6ohm* 2 130p 47p Application Note for Silicon RF Power Semiconductors 4/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049BOARD OUTLINE: 75.0*46.0(mm) Internal Layer (Layer 2) , Perspective Through Top View Internal Layer (Layer 3) , Perspective Through Top View Substrate Condition Nomial Total Completed Thickness (included resist coating): 1.6mm Layer1 ( Copper T: 43um with Gold Plating) 200um Prepreg 930um Core Layer2 (Copper T:35um) Layer3 (Copper T:35um) 200um Prepreg Er: 4.7 @ 1GHz TanD: 0.018 @ 1GHz Layer4 ( Copper T: 43um with Gold Plating) Material: MCL-E-679G(R), Hitachi Chemical Co. Application Note for Silicon RF Power Semiconductors 5/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 2.8 6.5 13.5 Standard Land Pattern Dimensions a. Di .9 4 = 8.3 3.3 3.8 25.4 4.1 1.2 18.0 19.7 23.4 3.2 4.9 3.5 3. UNIT: mm Application Note for Silicon RF Power Semiconductors 6/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 4. Component List - No. Tr C 1 C 2 C 3 C 5 C 6 C 7 C 8 C 9 C 10 C 11 C 12 C 13 C 14 C 15 C 16 C 17 C 18 C 19 C 20 C 21 C 22 C 23 C 25 C 26 C 27 C 28 C 29 C 30 C 31 C 32 C 33 C 34 C 35 C 36 L 1 L 2 L 3 L 4 L 5 L 6 L 7 R 1 R 2 R 3 R 4 R 5 R 6 R 7 R 8 Pb Rc Bc 1 Bc 2 Pe Pd Sbc Component List Description P/N Qty Manufacturer MOSFET RD70HUF2 1 Mitsubishi Electric Corporation 300 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO. 56 pF 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO. 56 pF 1608 Hi-Q 50V GQM1882C1H560JB01 1 MURATA MANUFACTURING CO. 220 pF 1608 50V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO. 220 pF 1608 50V GRM1882C1H221JA01 1 MURATA MANUFACTURING CO. 1500 pF 1608 50V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO. 1500 pF 1608 50V GRM1882C1H152JA01 1 MURATA MANUFACTURING CO. 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. 130 pF 2012 100V GRM2162C2A131JA01 1 MURATA MANUFACTURING CO. 0.1 uF 1608 16V GRM188B11C104KA01 1 MURATA MANUFACTURING CO. 0.1 uF 1608 16V GRM188B11C104KA01 1 MURATA MANUFACTURING CO. 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 68 pF 2012 Hi-Q 50V GQM2192C1H680JB01 1 MURATA MANUFACTURING CO. 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO. 8.2 pF 2012 Hi-Q 100V GQM2192C2A8R2DB01 1 MURATA MANUFACTURING CO. 56 pF 2012 Hi-Q 50V GQM2192C1H560JB01 1 MURATA MANUFACTURING CO. 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 3.9 pF 2012 Hi-Q 100V GQM2193C2A3R9CB01 1 MURATA MANUFACTURING CO. 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO. 390 pF 3216 200V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO. 390 pF 3216 200V GRM31M2C2D391JY21B 1 MURATA MANUFACTURING CO. 220 uF 35V EEUFC1V221 1 Panasonic Corporation 12 nH 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO. 12 nH 1608 LQG18HH12N00 1 MURATA MANUFACTURING CO. 8 nH * Diameter: Wire=0.2mm Inside=1.4mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. 8 nH * Diameter: Wire=0.2mm Inside=1.4mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. 8 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=2 1 YC CORPORATION Co.,Ltd. 12 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=3 1 YC CORPORATION Co.,Ltd. 17 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=4 1 YC CORPORATION Co.,Ltd. 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. 5.6 ohm 2012 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. 5.6 ohm 1608 RPC10T5R6J 1 TAIYOSHA ELECTRIC CO. 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO. 5.6k ohm 1608 RPC05T562J 1 TAIYOSHA ELECTRIC CO. 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO. 0 ohm 1608 RPC05T0R0 1 TAIYOSHA ELECTRIC CO. PCB MS3A0194 1 Homebuilt SMA female connector PAF-S00-002 2 GIGALANE Corporation Bias connector red color TM-605R 3 MSK Corporation Bias connector black color TM-605B 1 MSK Corporation Aluminum pedestal 1 Homebuilt Thermal Silicon Compound G746 Shin-Etsu Chemical Co.,Ltd Support of bias connectors 2 Homebuilt Conductiong wire 4 Homebuilt Screw M3 10 Screw M2.6 4Screw M2 4* Inductor of Rolling Coil measurement condition : f=100MHz Application Note for Silicon RF Power Semiconductors 7/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- - 5. Standard Deliverable TYPE1 Evaluation Board assembled with all the component including the option TYPE2 PCB (raw board) Thermal Design of Heat Sink M3 Screw M3 Screw Pb Junction point of MOSFET chip Tr (in this package) Pd Rth(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom) Pe =0.48 (deg. C./W) Thermally connect Heat Sink Tch(delta)=(Pout/Efficiency-Pout+Pin) x Rth(ch-Pe bottom)=(65W/55%-65W+5.5) x 0.48=28.2 (deg. C.) Also, operating Tj(“Tj(op)”)=140 (deg. C.), in case of RD series that Tch(max)=175 (deg. C.) Therefore TPe bottom-air as delta temperature between Pe bottom and ambient 60 deg. C.* is TPe bottom-air=“Tj(op)” - Tch(delta) - Ta(60deg.C.)=140-28.2-60=51.8 (deg. C.) *: an instance assuming high temperature of standard ambient conditions is 60 deg. C. In terms of long-term reliability, “Tj(op)” has to be kept less than 140 deg. C. i.e. TPe bottom-air has to be less than 51.8 deg. C.. The thermal resistance of the heat sink to border it: Rth(Pe bottom-air)=TPe bottom-air/(Pout/Efficiency-Pout+Pin)=51.8/(65W/55%-65W+5.5)=0.88 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 0.88 deg. C./W. For assembly method including relevant precaution, refer to AN-GEN-070 Application Note for Silicon RF Power Semiconductors 8/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 6. Typical RF Characteristics 6-1. Frequency vs. OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS Ta=+25deg.C Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W 100 Ta=+25deg.C Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=4W 20 50 20 Pout 40 16 ηD 70 14 Gp 60 Idd Pout(dBm) 80 10 30 0 12 20 50 -10 I.R.L. Input R. L. (dB) , Idd(A) 18 Pout Gp(dB) Pout(W) , Drain Effi(%) 90 10 40 8 130 135 140 145 150 155 160 165 170 175 180 10 -20 130 135 140 145 150 155 160 165 170 175 180 f (MHz) f (MHz) Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A, Pin=4.0W Freq. (MHz) 130 135 140 145 150 155 160 165 170 175 180 Vgg1 (V) 2.75 2.75 2.75 2.74 2.74 2.75 2.75 2.75 2.75 2.75 2.75 Vgg2 (V) 2.74 2.74 2.74 2.74 2.74 2.75 2.75 2.75 2.75 2.74 2.74 Pin (dBm) 36.0 36.0 36.0 36.0 36.1 36.0 36.0 36.0 36.0 36.0 36.0 (W) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Pout (dBm) (W) 49.2 82.4 49.2 83.1 49.2 83.8 49.2 83.0 49.1 81.4 49.1 80.4 49.1 80.8 49.1 81.9 49.2 83.0 49.2 83.9 49.2 82.3 Gp (dB) 13.1 13.2 13.2 13.2 13.1 13.0 13.0 13.1 13.2 13.2 13.1 ID(RF) (A) 10.81 10.09 9.50 8.99 8.64 8.50 8.56 8.70 8.86 8.97 8.94 ηadd (%) 58.0 62.7 67.2 70.3 71.7 71.9 71.8 71.6 71.4 71.2 70.1 ηD (%) 61.0 65.9 70.6 73.9 75.4 75.6 75.5 75.3 74.9 74.8 73.7 I.R.L. (dB) -8.5 -10.4 -11.5 -12.2 -12.8 -13.4 -13.3 -12.2 -10.5 -8.6 -7.1 Application Note for Silicon RF Power Semiconductors 9/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 6-2. RF Power vs. INPUT POWER Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 50 Pout , OUTPUT POWER(dBm) Pout , OUTPUT POWER(W) 100 80 135MHz 155MHz 60 175MHz 40 20 0 45 155MHz 135MHz 40 175MHz 35 30 0 2 4 6 Pin, INPUT POWER(W) 8 10 20 30 Pin, INPUT POWER(dBm) 40 POWER GAIN Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 21 21 20 20 19 Gp, POWER GAIN(dB) Gp, POWER GAIN(dB) 19 135MHz 135MHz 18 17 175MHz 16 15 14 155MHz 13 18 17 16 175MHz 15 14 155MHz 13 12 12 11 11 0 20 40 60 80 Pout, OUTPUT POWER(W) 100 30 40 Pout, OUTPUT POWER(dBm) 50 Application Note for Silicon RF Power Semiconductors 10/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049DRAIN EFFICIENCY Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 80 175MHz 70 ηD, DRAIN EFFICIENCY(%) ηD, DRAIN EFFICIENCY(%) 80 155MHz 60 50 135MHz 40 30 20 10 70 175MHz 60 155MHz 50 40 30 135MHz 20 10 0 20 40 60 80 Pout, OUTPUT POWER(W) 100 30 40 Pout, OUTPUT POWER(dBm) 50 DRAIN CURRENT Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 12 10 135MHz Idd, DRAIN CURRENT(A) Idd, DRAIN CURRENT(A) 12 175MHz 8 6 155MHz 4 2 0 10 135MHz 8 175MHz 6 4 155MHz 2 0 0 20 40 60 80 Pout, OUTPUT POWER(W) 100 30 40 Pout, OUTPUT POWER(dBm) 50 Application Note for Silicon RF Power Semiconductors 11/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049INPUT RETURN LOSS Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A Ta=+25deg.C,Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 0 -5 I.R.L., INPUT RETURN LOSS (dB) I.R.L., INPUT RETURN LOSS (dB) 0 175MHz -10 135MHz -15 155MHz -20 -5 175MHz -10 135MHz -15 155MHz -20 0 20 40 60 80 Pout, OUTPUT POWER(W) 100 30 40 Pout, OUTPUT POWER(dBm) 50 Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A 135MHz Vgg1 (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Vgg2 (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Pin (dBm) (W) 10.0 0.01 11.0 0.01 12.0 0.02 13.0 0.02 14.0 0.03 15.0 0.03 16.0 0.04 17.0 0.05 18.0 0.06 19.0 0.08 20.0 0.10 21.0 0.13 22.0 0.16 23.0 0.20 24.0 0.25 25.0 0.31 26.0 0.39 27.0 0.51 28.0 0.63 29.0 0.80 30.0 1.00 31.0 1.26 32.0 1.59 33.0 2.01 34.0 2.52 35.0 3.17 36.0 3.96 37.0 5.02 38.0 6.35 39.0 7.97 40.0 10.09 Pout (dBm) (W) 28.9 0.8 29.9 1.0 30.9 1.2 31.9 1.5 32.9 1.9 33.9 2.4 34.9 3.1 35.9 3.9 36.9 4.9 38.0 6.3 39.0 8.0 40.1 10.2 41.1 12.9 42.2 16.6 43.2 20.8 44.1 25.7 45.0 31.4 45.8 38.4 46.5 44.9 47.1 51.0 47.5 56.8 47.9 62.1 48.3 67.0 48.5 71.6 48.8 75.8 49.0 79.4 49.2 82.6 49.3 85.3 49.4 87.8 49.5 89.7 49.6 91.2 Gp (dB) 18.9 18.9 18.8 18.8 18.8 18.9 18.9 18.9 18.9 19.0 19.0 19.1 19.1 19.2 19.2 19.1 19.0 18.8 18.5 18.1 17.5 16.9 16.2 15.5 14.8 14.0 13.2 12.3 11.4 10.5 9.6 ID(RF) (A) 1.23 1.31 1.41 1.52 1.67 1.83 2.03 2.26 2.53 2.84 3.18 3.58 4.01 4.54 5.08 5.65 6.24 6.90 7.45 7.93 8.35 8.72 9.04 9.34 9.61 9.84 10.04 10.22 10.39 10.51 10.61 ηadd (%) 5.0 5.9 6.9 8.0 9.1 10.5 11.9 13.6 15.4 17.6 19.9 22.5 25.4 28.8 32.3 36.0 39.8 44.0 47.5 50.7 53.4 55.8 57.9 59.6 61.0 62.0 62.6 62.9 62.8 62.2 61.2 ηD (%) 5.1 6.0 6.9 8.1 9.2 10.6 12.1 13.7 15.6 17.8 20.1 22.8 25.7 29.2 32.7 36.4 40.3 44.6 48.2 51.5 54.4 57.0 59.3 61.3 63.1 64.6 65.8 66.8 67.6 68.3 68.8 I.R.L. (dB) -10.7 -10.8 -10.9 -11.0 -11.0 -11.0 -11.0 -11.0 -11.0 -10.9 -10.8 -10.8 -10.7 -10.6 -10.4 -10.2 -10.0 -9.9 -9.8 -9.8 -9.8 -9.9 -10.0 -10.1 -10.2 -10.3 -10.4 -10.5 -10.6 -10.6 -10.6 Application Note for Silicon RF Power Semiconductors 12/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049155MHz Vgg1 (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Vgg2 (V) 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 Pin (dBm) (W) 10.0 0.01 11.0 0.01 12.0 0.02 13.0 0.02 14.0 0.03 15.0 0.03 16.0 0.04 17.0 0.05 18.0 0.06 19.0 0.08 20.0 0.10 21.0 0.13 22.0 0.16 23.0 0.20 24.0 0.25 25.0 0.32 26.0 0.40 27.0 0.50 28.0 0.63 29.0 0.80 30.0 1.00 31.0 1.26 32.0 1.59 33.0 2.00 34.0 2.52 35.0 3.16 36.0 3.99 37.0 5.03 38.0 6.35 39.0 7.95 40.0 10.02 Pout (dBm) (W) 28.9 0.8 29.9 1.0 30.9 1.2 31.9 1.5 32.8 1.9 33.8 2.4 34.8 3.0 35.9 3.9 36.9 4.9 37.9 6.2 39.0 7.9 40.0 10.0 41.1 12.8 42.1 16.2 43.1 20.5 44.1 25.4 45.0 31.4 45.8 37.9 46.5 44.7 47.1 51.3 47.6 57.3 48.0 62.8 48.3 67.4 48.5 71.1 48.7 74.6 48.9 77.2 49.0 79.7 49.1 81.9 49.2 83.8 49.3 85.5 49.4 87.1 Gp (dB) 18.9 18.9 18.8 18.8 18.8 18.8 18.8 18.8 18.9 18.9 18.9 19.0 19.0 19.1 19.1 19.1 19.0 18.8 18.5 18.1 17.6 17.0 16.3 15.5 14.7 13.9 13.0 12.1 11.2 10.3 9.4 ID(RF) (A) 1.20 1.25 1.32 1.40 1.50 1.62 1.77 1.94 2.15 2.39 2.67 2.98 3.35 3.76 4.22 4.69 5.21 5.73 6.22 6.67 7.05 7.39 7.68 7.92 8.13 8.31 8.46 8.61 8.73 8.84 8.94 ηadd (%) 5.1 6.1 7.3 8.6 10.1 11.8 13.6 15.7 18.0 20.5 23.4 26.5 30.1 34.1 38.4 42.8 47.6 52.3 56.7 60.7 63.9 66.6 68.6 69.9 70.9 71.3 71.6 71.5 71.0 70.2 69.0 ηD (%) 5.2 6.2 7.4 8.8 10.3 11.9 13.8 15.9 18.2 20.8 23.7 26.8 30.5 34.5 38.9 43.4 48.2 53.0 57.5 61.6 65.1 68.0 70.2 71.9 73.3 74.4 75.3 76.2 76.8 77.4 77.9 I.R.L. (dB) -13.1 -13.4 -13.2 -13.4 -13.5 -13.6 -13.7 -13.8 -13.9 -14.1 -14.2 -14.3 -14.5 -14.7 -14.9 -15.2 -15.5 -15.8 -15.9 -15.8 -15.5 -15.2 -14.7 -14.3 -13.9 -13.6 -13.3 -13.0 -12.6 -12.1 -11.1 175MHz Vgg1 (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Vgg2 (V) 2.74 2.74 2.73 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.74 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Pin (dBm) (W) 10.0 0.01 11.0 0.01 12.0 0.02 13.0 0.02 14.0 0.03 15.0 0.03 16.0 0.04 17.0 0.05 18.0 0.06 19.0 0.08 20.0 0.10 21.0 0.13 22.0 0.16 23.0 0.20 24.0 0.25 25.0 0.32 26.0 0.40 27.0 0.50 28.0 0.63 29.0 0.79 30.0 1.00 31.0 1.26 32.0 1.59 33.0 2.00 34.0 2.51 35.0 3.17 36.0 3.99 37.0 5.04 38.0 6.32 39.0 7.97 40.0 10.04 Pout (dBm) (W) 27.1 0.5 28.0 0.6 29.0 0.8 30.0 1.0 31.0 1.3 32.1 1.6 33.1 2.0 34.1 2.6 35.1 3.2 36.1 4.1 37.1 5.2 38.2 6.6 39.3 8.4 40.3 10.7 41.3 13.6 42.4 17.3 43.4 21.9 44.4 27.5 45.3 33.8 46.1 40.9 46.8 48.4 47.5 55.7 48.0 62.6 48.4 69.0 48.7 74.7 49.0 79.5 49.2 83.3 49.4 86.2 49.5 88.5 49.6 90.5 49.7 92.4 Gp (dB) 17.0 17.0 17.0 17.0 17.0 17.0 17.0 17.1 17.1 17.1 17.1 17.2 17.2 17.3 17.3 17.4 17.4 17.4 17.3 17.1 16.8 16.5 16.0 15.4 14.7 14.0 13.2 12.3 11.5 10.6 9.6 ID(RF) (A) 1.14 1.18 1.23 1.29 1.37 1.46 1.57 1.71 1.88 2.07 2.28 2.55 2.85 3.20 3.58 4.02 4.52 5.06 5.62 6.20 6.76 7.26 7.71 8.10 8.43 8.72 8.95 9.13 9.28 9.40 9.52 ηadd (%) 3.5 4.2 5.1 6.1 7.3 8.6 10.1 11.7 13.6 15.6 17.8 20.3 23.2 26.4 29.8 33.7 38.1 42.6 47.2 51.8 56.1 60.0 63.4 66.2 68.5 70.0 70.9 71.1 70.9 70.2 69.2 ηD (%) 3.6 4.3 5.2 6.3 7.4 8.8 10.3 12.0 13.9 15.9 18.1 20.7 23.6 26.9 30.4 34.4 38.8 43.4 48.1 52.8 57.3 61.4 65.0 68.2 70.8 72.9 74.4 75.5 76.3 77.0 77.6 I.R.L. (dB) -7.3 -7.4 -7.5 -7.5 -7.6 -7.6 -7.6 -7.7 -7.7 -7.7 -7.7 -7.7 -7.7 -7.7 -7.7 -7.6 -7.6 -7.6 -7.6 -7.6 -7.7 -7.8 -8.0 -8.1 -8.3 -8.5 -8.6 -8.8 -8.9 -9.1 -9.2 Application Note for Silicon RF Power Semiconductors 13/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 6-3. Drain Quiescent Current vs. OUTPUT POWER and DRAIN EFFICIENCY Pin=4W Ta=+25deg.C,Vds=12.5V Pin=4W Ta=+25deg.C,Vds=12.5V 90 80 155MHz ηD, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER(W) 175MHz 80 155MHz 135MHz 70 60 400 600 800 1000 1200 1400 1600 Idq, DRAIN QUIESCENT CURRENT(mA) 175MHz 70 135MHz 60 50 400 600 800 1000 1200 1400 1600 Idq, DRAIN QUIESCENT CURRENT(mA) Ta=+25deg. C., Vds=12.5V, Pin=4.0W 135MHz 155MHz 175MHz Vgg1 (V) 2.60 2.64 2.68 2.73 2.76 2.79 2.81 Vgg2 Total Idq (V) (mA) 2.60 400 2.65 600 2.69 800 2.73 1000 2.76 1200 2.79 1400 2.81 1600 Pin (dBm) 36.0 36.0 36.1 36.1 36.1 36.1 36.0 Vgg1 (V) 2.60 2.64 2.68 2.73 2.76 2.79 2.81 Vgg2 Total Idq (V) (mA) 2.60 400 2.66 600 2.70 800 2.74 1000 2.76 1200 2.79 1400 2.81 1600 Pin (dBm) 36.0 36.0 36.0 36.0 36.0 36.0 36.0 Vgg1 (V) 2.60 2.64 2.68 2.73 2.76 2.79 2.81 Vgg2 Total Idq (V) (mA) 2.60 400 2.65 600 2.69 800 2.73 1000 2.76 1200 2.79 1400 2.81 1600 Pin (dBm) 36.0 36.0 36.0 36.0 36.0 36.0 36.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Pout (dBm) 49.0 49.0 49.1 49.2 49.3 49.3 49.3 (W) 77.1 79.1 80.6 82.3 81.9 82.6 83.0 Idd (A) 9.26 9.41 9.53 9.65 9.64 9.70 9.74 ηD (%) 66.6 67.3 67.6 68.2 67.9 68.1 68.2 ηadd (%) 63.2 63.9 64.3 64.9 64.6 64.8 64.9 Gain (dB) 12.9 12.9 13.0 13.1 13.1 13.2 13.2 I.R.L. (dB) -10.4 -10.4 -10.4 -10.4 -10.4 -10.4 -10.3 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Pout (dBm) 48.9 48.9 49.0 49.0 49.1 49.1 49.1 (W) 78.5 80.0 81.0 82.2 82.5 82.6 83.1 Idd (A) 8.38 8.49 8.57 8.64 8.68 8.70 8.74 ηD (%) 75.0 75.4 75.6 76.1 76.0 76.0 76.1 ηadd (%) 71.1 71.6 71.9 72.4 72.3 72.3 72.4 Gain (dB) 12.9 13.0 13.1 13.1 13.1 13.1 13.2 I.R.L. (dB) -13.3 -13.3 -13.3 -13.4 -13.4 -13.4 -13.4 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Pout (dBm) 49.1 49.1 49.2 49.2 49.2 49.3 49.3 (W) 80.0 81.4 82.7 83.9 83.9 83.9 84.6 Idd (A) 8.85 8.95 9.04 9.11 9.11 9.14 9.20 ηD (%) 72.3 72.8 73.2 73.7 73.7 73.4 73.6 ηadd (%) 68.7 69.2 69.6 70.2 70.2 69.9 70.1 Gain (dB) 13.0 13.1 13.2 13.2 13.2 13.2 13.2 I.R.L. (dB) -8.7 -8.7 -8.7 -8.7 -8.6 -8.7 -8.6 (W) (W) (W) Application Note for Silicon RF Power Semiconductors 14/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049- 6-4. DC Power Supply vs. OUTPUT POWER and DRAIN EFFICIENCY Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V 90 175MHz 100 ηD, DRAIN EFFICIENCY(%) Pout , OUTPUT POWER(W) 110 135MHz 90 80 155MHz 70 155MHz 80 175MHz 70 135MHz 60 50 40 60 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 DRAIN CURRENT Pin=4W Ta=+25deg.C, Vgg fixed at Idq=Total 1.0A(One-side 0.5A), Vds=12.5V 12 Idd, DRAIN CURRENT(A) 11 135MHz 175MHz 10 9 155MHz 8 7 6 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 Application Note for Silicon RF Power Semiconductors 15/16 RD70HUF2 single-stage amplifier with f=135-to-175MHz evaluation board - AN-VHF-049Ta=+25deg. C., Pin=4.0W 135MHz Vgg1 Vgg2 (V) (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Vdd (V) 11.0 12.0 13.0 14.0 15.0 Idq Pin Pout (mA) (dBm) (W) (dBm) (W) 969 36.0 4.0 48.2 65.9 995 36.0 4.0 48.8 75.0 1033 36.0 4.0 49.3 84.3 1067 36.0 4.0 49.7 93.5 1097 36.0 4.0 50.1 102.6 Idd (A) 8.97 9.57 10.16 10.70 11.22 ηD ηadd Gain I.R.L. (%) (%) (dB) (dB) 58.8 55.2 12.2 -10.5 62.7 59.3 12.7 -10.4 66.4 63.2 13.3 -10.4 69.9 66.9 13.7 -10.4 73.1 70.3 14.1 -10.3 155MHz Vgg1 Vgg2 (V) (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.72 2.73 Vdd (V) 11.0 12.0 13.0 14.0 15.0 Idq Pin Pout (mA) (dBm) (W) (dBm) (W) 937 36.0 4.0 47.8 60.9 962 36.0 4.0 48.5 71.3 1020 36.0 4.0 49.1 82.1 1058 36.0 4.0 49.7 93.2 1094 36.0 4.0 50.2 104.6 Idd (A) 7.40 8.00 8.59 9.16 9.72 ηD ηadd Gain I.R.L. (%) (%) (dB) (dB) 65.9 61.6 11.8 -13.0 71.3 67.2 12.5 -13.2 76.4 72.7 13.1 -13.4 81.4 77.8 13.6 -13.5 86.1 82.8 14.2 -13.7 175MHz Vgg1 Vgg2 (V) (V) 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 2.73 Vdd (V) 11.0 12.0 13.0 14.0 15.0 Idq Pin Pout (mA) (dBm) (W) (dBm) (W) 947 36.1 4.0 48.1 63.9 982 36.0 4.0 48.7 74.6 1015 36.0 4.0 49.3 85.7 1047 36.0 4.0 49.9 96.8 1082 36.0 4.0 50.3 107.9 Idd (A) 7.80 8.44 9.07 9.67 10.25 ηD ηadd Gain I.R.L. (%) (%) (dB) (dB) 65.6 61.5 12.0 -8.9 70.7 66.9 12.7 -8.8 75.6 72.1 13.3 -8.6 80.1 76.7 13.8 -8.5 84.3 81.1 14.3 -8.4 Application Note for Silicon RF Power Semiconductors 16/16