Transcript
GD300CUT120C2S
IGBT Module
STARPOWER IGBT
SEMICONDUCTORTM
GD300CUT120C2S Molding Type Module 1200V/300A chopper in one-package
General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as inverters and UPS.
Features
Low VCE(sat) trench IGBT technology Low switching loss 10μs short circuit capability Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology
Equivalent Circuit Schematic
Typical Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply
©2011 STARPOWER Semiconductor Ltd.
12/4/2011
1/9
Rev.A
GD300CUT120C2S
IGBT Module
Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD Tjmax TSTG VISO Mounting Torque
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=80℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current @ TC=80℃ Diode Maximum Forward Current tp=1ms Maximum Power Dissipation @ Tj=175℃ Maximum Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Power Terminal Screw:M6 Mounting Screw:M6
GD300CUT120C2S 1200 ±20 550 300 600
Units V V
300
A
600 1648 175 -40 to +125 2500 2.5 to 5.0 3.0 to 5.0
A W ℃ ℃ V
A A
N.m
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol V(BR)CES ICES IGES
Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current
Test Conditions
Min.
Typ.
Max.
1200
Tj=25℃
Units V
VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃
5.0
mA
400
nA
On Characteristics Symbol VGE(th)
VCE(sat)
Parameter Gate-Emitter Threshold Vol tage Collector to Emitter Saturation Voltage
Test Conditions IC=12.0mA,VCE=VGE, Tj=25℃ IC=300A,VGE=15V, Tj=25℃ IC=300A,VGE=15V, Tj=125℃
©2011 STARPOWER Semiconductor Ltd.
Min.
Typ.
Max.
Units
5.0
5.8
6.5
V
1.70
2.15
12/4/2011
V 2.00
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Rev.A
GD300CUT120C2S
IGBT Module
Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres
Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance
ISC
SC Data
RGint LCE
Internal Gate Resistance Stray Inductance Module Lead Resistance, Terminal To Chip
RCC’+EE’
Test Conditions
Min.
VCC=600V,IC=300A, RG=2.4Ω,VGE=±15V, Tj=25℃
VCC=600V,IC=300A, RG=2.4Ω,VGE=±15V, Tj=125℃
VCE=25V,f=1MHz, VGE=0V tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V
Typ. 248 89 540 130
Max.
Units ns ns ns ns
17.1
mJ
25.1
mJ
298 100 645 178
ns ns ns ns
25.1
mJ
43.9
mJ
21.5 1.13
nF nF
0.98
nF
1200
A Ω nH
2.5 20
mΩ
0.35
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted Symbol VF Qr IRM Erec
Parameter Diode Forward Vol tage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy
Test Conditions Tj=25℃ IF=300A Tj=125℃ Tj=25℃ Tj=125℃ IF=300A, Tj=25℃ VR=600V, RG=2.4Ω, Tj=125℃ VGE=-15V Tj=25℃ Tj=125℃
©2011 STARPOWER Semiconductor Ltd.
Min.
12/4/2011
Typ. 1.65 1.65 30.0 56.1 211 268 14.1 25.9
3/9
Max. 2.10
Units V μC A mJ
Rev.A
GD300CUT120C2S
IGBT Module
Thermal Characteristics Symbol RθJC RθJC RθCS Weight
Parameter Junction-to-Case (per IGBT) Junction-to-Case (per DIODE) Case-to-Sink (Conductive grease applied) Weight of Module
©2011 STARPOWER Semiconductor Ltd.
Typ.
Max. 0.091 0.159
0.035 300
12/4/2011
4/9
Units K/W K/W K/W g
Rev.A
GD300CUT120C2S
IGBT Module
600
600
550 500
500
450
450
400 350 300
125℃
200
200
150
150
100
100
50
50
0
0 1
1.5
2
2.5
3
125℃
300 250
0.5
25℃
350
250
0
VCE=20V
400
25℃ IC [A]
IC [A]
550
VGE=15V
3.5
5
6
7
8
VCE [V]
10
11
12
VGE [V]
Fig 1. IGBT Output Characteristic
Fig 2. IGBT Transfer Characteristic
90
180 VCC=600V RG=2.4Ω VGE=±15V Tj=125℃
80 70
140
60
120
50
100
EOFF
40
VCC=600V IC=300A VGE=±15V Tj=125℃
160
E [mJ]
E [mJ]
9
30
EON
80 60
EON
20
40
10
20
0
0 0
100 200 300 400 500 600
EOFF
0
4
8
©2011 STARPOWER Semiconductor Ltd.
16
20
RG [Ω]
IC [A] Fig 3. IGBT Switching Loss vs. IC
12
Fig 4. IGBT Switching Loss vs. RG 12/4/2011
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Rev.A
24
GD300CUT120C2S
IGBT Module 0.1
700 Module
IGBT
600
ZthJC [K/W]
IC [A]
500 400 300
0.01
200 RG=2.4Ω VGE=±15V Tj=125℃
100
i: 1 2 3 4 ri[K/W]: 0.0492 0.0081 0.0059 0.0278 τi[s]: 0.0451 0.0040 0.0007 0.0966
0 0
350
700
1050
0.001 0.001
1400
0.01
VCE [V]
1
10
t [s]
Fig 5. RBSOA
Fig 6. IGBT Transient Thermal Impedance 32
600 550
28
500
EREC
24
450 400
20
350
E [mJ]
IF [A]
0.1
300 250
16 12
200
125℃
150
VCC=600V RG=2.4Ω VGE=-15V Tj=125℃
8
25℃
100
4
50 0
0 0
0.5
1
1.5
2
2.5
0
100 200 300 400 500 600
VF [V] Fig 7. Diode Forward Characteristic ©2011 STARPOWER Semiconductor Ltd.
IF [A] Fig 8. Diode Switching Loss vs. IF 12/4/2011
6/9
Rev.A
GD300CUT120C2S
IGBT Module 1
28 24 20
Diode ZthJC [K/W]
E [mJ]
EREC 16 12
0.1
VCC=600V IF=300A VGE=-15V Tj=125℃
8 4
i: 1 2 3 4 ri[K/W]: 0.0856 0.0145 0.0108 0.0481 0.0451 0.0040 0.0007 0.0966 τi[s]:
0 0
4
8
12
16
20
24
0.01 0.001
0.01
RG [Ω] Fig 9. Diode Switching Loss vs. RG
©2011 STARPOWER Semiconductor Ltd.
0.1
1
10
t [s] Fig 10. Diode Transient Thermal Impedance
12/4/2011
7/9
Rev.A
GD300CUT120C2S
IGBT Module
Package Dimensions Dimensions in Millimeters
©2011 STARPOWER Semiconductor Ltd.
12/4/2011
8/9
Rev.A
GD300CUT120C2S
IGBT Module
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2011 STARPOWER Semiconductor Ltd.
12/4/2011
9/9
Rev.A
