Plf09a - Admiral Microwaves

Transcript

PLF09A GaAs p-HEMT LNA Features Applications 880 - 1000MHz LNA for PCS 20 dB Gain at 880MHz Repeater +25.5 dBm Output IP3 Base Station 0.75 dB Noise Figure Mobile Infrastructure Functional Diagram No matching circuit needed Low power consumption (3V/52mA) Surface mount type Function Pin No. RF IN 2 RF OUT 5 Vcc 6 Ground 1,3,4 Description The PLF09A is a high performance GaAs p-HEMT LNA (Low Noise Amplifier). The amplifier features high linear performance, low noise figure, low power consumption and high reliability. The PLF09A operates from a single voltage supply and no matching circuit needed. The device is a superior performance p-HEMT amplifier that offers high dynamic range in a low cost miniature surface mount type with metal cover. These PLF series provide the most suitable solutions for LNA in communication systems. Specifications Symbol Parameters Units S21 Gain dB S11 S22 P1dB OIP3 NF V/I Input p Return Loss Output Return Loss Min. Typ. 880 MHz 20.0 960 MHz 19.0 880 MHz -18 960 MHz -18 880 MHz -8 960 MHz -8 880 MHz 13 960 MHz 13 880 MHz 25.5 960 MHz 25.5 880 MHz 0.75 960 MHz 0.75 Max. dB dB Output Power @1dB compression dBm Output Third Order intercept dBm N i Figure Noise Fi dB Device Voltage / Current Freq. V/mA 3.0/52 Test Conditions : T=25°C, Supply Voltage=+3.0V, 50ohm System, OIP3 measured with two tones at an output power of 0dBm/tone separated by 1MHz. 4-7 http://www.prewell.com PLF09A GaAs p-HEMT LNA Typical RF Performance Gain vs. Frequency NF vs. Frequency 1.0 24 o +25 C o -40 C o +85 C 0.8 NF(dB B) Gain(dB) 22 20 o +25 C 0.6 18 16 0.88 0.92 0.96 0.4 0.88 1.00 Frequency(GHz) 0.92 0.96 1.00 Frequency(GHz) Input Return Loss Output Return Loss 0 0 o +25 C o -40 C o +85 C -10 S22(dB) S11(dB) -10 -20 30 -30 0.88 o +25 C o -40 C o +85 C -20 0.92 0.96 -30 0.88 1.00 Frequency(GHz) 0.92 0.96 1.00 Frequency(GHz) Output IP3 vs. Frequency P1dB vs. Frequency 18 30 o 16 P1dB(dBm) OIP3(dBm) 28 26 o 24 +25 C o -40 C o +85 C 22 20 0.88 +25 25 C o -40 C o +85 C 0.92 0.96 14 12 10 0.88 1.00 0.92 0.96 1.00 Frequency(GHz) Frequency(GHz) 4-8 http://www.prewell.com PLF09A GaAs p-HEMT LNA Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 66 mA RF Power Input 10 dBm Storage Temperature -55 to +125 °C C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Outline Drawing Soldering Time Profile 1. Maximum temperature: +260°C or below. 2 2. Ti Time att maximum i temperature: t t 10s 10 or less l 3. Time of temperature higher than +220°C : 60s or less 4. Preheating time at +120°C to +180°C: 120±30s 5. Maximum number of reflow process : 3times 6. Maximum chlorine content of rosin flux (percentage mass) : 0.2% or less Evaluation Board Layout (2.3x2.3) Mounting Instructions 1. 2. 3. 4. 5. 4-9 Use a large ground pad area with many plated through-holes as shown. We recommend 1 oz copper minimum. Measurement for our datasheet was made on 0 8mm thick FR 0.8mm FR-4 4 Board Board. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. RF trace width depends on the board material and construction. http://www.prewell.com