Transcript
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE
A B C D P
X
Q
S
1234
F
P
P
T
1. V UPC 2. U FO 3. U P 4. V UPI 5. V VPC 6. V FO 7. V P 8. V VPI 9. V WPC 10. WFO 11. WP 12. V WPI 13. V NC
5678
9
Y (15 TYP.)
11
13 15 17 19
10 12
14 16 18
H
G
U (4 TYP.) P
N
V - DIA. (4 TYP.)
B
N
M
M
U
V
M
M
W
Z
M
14. V NI 15. B R 16. U N 17. V N 18. WN 19. FO 20. P 21. B 22. N 23. U 24. V 25. W
Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.
E 2.0 ± 0.1 X 0.5 ± 0.1 MM PIN (6 TYP.)
N
W
J
Features: u Complete Output Power Circuit
u Gate Drive Circuit u Protection Logic
OUT V CC
FO SI
IN
V UPC UP U FO V UPI
K
GND GND
OUT V CC
FO
IN
V VPC VP V FO V VPI V
SI
GND GND
OUT V CC
FO
IN
SI
GND GND
IN
FO SI
OUT V CC
UN
B
GND GND
VN FO
IN
OUT V CC
TEMP
SI
GND GND
OUT V CC
V NI
V NC WN IN
FO SI
GND GND
OUT V CC
FO BR IN
FO SI
GND GND
V WPC WP W FO V WPI
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN (19 TYP.) W L R
AA
U
– Short Circuit – Over Current – Over Temperature – Under Voltage
P
Outline Drawing and Circuit Diagram Dimensions A
Inches
Millimeters
Inches
Millimeters
3.98±0.04
101.0±1.0
Dimensions N
0.41
10.5
B
3.78
96.0
P
0.400
10.16
C
3.48±0.03
88.5±0.8
Q
0.392
9.96
D
2.700±0.03
68.58±0.8
R
0.31
8.0
E
2.66±0.02
67.5±0.5
S
0.26
6.5
F
2.36±0.04
60.0±1.0
T
0.246
G
1.85±0.02
47.0±0.5
U
0.18 Rad.
Rad. 4.5
6.25
H
1.83±0.03
46.5±0.8
V
0.18 Dia.
Dia. 4.5
J
1.28
32.6
W
0.17±0.02
4.4±0.5
K
0.97
24.6
X
0.10
2.5
L
0.71±0.04
18.0±1.0
Y
0.100±0.01
2.54±0.25
M
0.53±0.01
13.5±0.3
Z
0.02
0.5
AA
0.14
3.5
Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM15RSH120 is a 1200V, 15 Ampere Intelligent Power Module. Type PM
Current Rating Amperes
VCES Volts (x 10)
15
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M4 Mounting Screws
—
0.98 ~ 1.47
N·m
Module Weight (Typical)
—
100
Grams
Power Device Junction Temperature
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C)
VCC(prot.)
800
Volts
Viso
2500
Vrms
VD
20
Volts
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)
VCIN
20
Volts
Fault Output Supply Voltage Applied between (UFO-V UPC, VFO-VVPC, WFO-VWPC, FO-VNC)
VFO
20
Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal)
IFO
20
mA
VCES
1200
Volts
IC
15
Amperes
ICP
30
Amperes
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1 -VWPC, VN1-VNC)
IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25°C) Peak Collector Current, (TC = 25°C) Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation
VCC
900
Volts
VCC(surge)
1000
Volts
PC
83
Watts
VCES
1200
Volts
IC
10
Amperes
Brake Sector Collector-Emitter Voltage Collector Current, (TC = 25°C) Peak Collector Current, (TC = 25°C)
ICP
20
Amperes
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
PC
41
Watts
IF
10
Amperes
VR(DC)
1200
Volts
Supply Voltage, Surge (Applied between P - N) Collector Dissipation Diode Forward Current Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
OC
-20°C ≤ T ≤ 125°C, VD = 15V
Min.
Typ.
Max.
Units
Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part
SC
-20°C ≤ T ≤ 125°C, VD = 15V
Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection
Supply Circuit Under Voltage Protection
22
37
—
Amperes
15
27
—
Amperes
—
56
—
Amperes
—
41
—
Amperes
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
—
90
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UV r
Reset Level
—
12.5
—
Volts
Supply Voltage
VD
Applied between VUP1-VUPC,
13.5
15
16.5
Volts
Circuit Current
ID
—
25
35
mA
VVP1-VVPC, VWP1-VWPC, VN1-VNC VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC
—
7
10
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC , VP-VVPC, WP-VWPC,
1.7
2.0
2.3
Volts
UN · VN · WN · Br-VNC PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector Collector Cutoff Current
Emitter-Collector Voltage Collector-Emitter Saturation Voltage
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
VEC
-IC = 15A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE(sat)
VD = 15V, VCIN = 0V, I C = 15A
—
2.3
3.3
Volts
VD = 15V, VCIN = 0V, I C = 15A,
—
2.1
3.1
Volts
Tj = 125°C Inductive Load Switching Times
0.4
0.7
1.5
µs
trr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
tC(on)
VCC = 600V, I C = 15A
—
0.3
1.0
µs
toff
Tj = 125°C
—
1.7
2.9
µs
—
0.7
1.3
µs
—
2.8
3.8
Volts
—
2.5
3.5
Volts
—
2.5
3.5
Volts
ton
tC(off)
Brake Sector Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, I C = 10A, Tj = 25°C VD = 15V, VCIN = 0V, I C = 10A, Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
I F = 10A, VD = 15V, VCIN = 5V VCE = VCES, Tj = 25°C
—
—
1
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each Inverter IGBT
—
—
1.5
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
4.5
°C/Watt
Rth(c-f)Q
Each Brake IGBT
—
—
3.0
°C/Watt
Rth(c-f)F
Each Brake FWDi
—
—
5.5
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.044
°C/Watt
Contact Thermal Resistance
Thermal Grease Applied
Recommended Conditions for Use Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 800
Volts
Applied between VUP1-VUPC ,
15 ± 1.5
Volts
VD
VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP, VP, WP, UN, VN, WN, Br
4.0 ~ VD
Volts
PWM Input Frequency
fPWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
≥ 2.5
µs
Input Signal
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE
Inverter Part
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1.5 1.0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC
0.5
2.5 2.0 1.5 1.0 IC = 15A VCIN = 0V Tj = 25oC Tj = 125oC
0.5 0
0
5
10
15
20
12
14
16
18
0
1.0
2.0
3.0
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL)
103
102 VCC = 600V VD = 15V
Inductive Load
Inductive Load
Inductive Load
toff
100 ton
10-1 100
101
Tj = 25oC Tj = 125oC
100 tc(off) tc(on)
10-1 100
102
REVERSE RECOVERY TIME, trr, (µs)
VCC = 600V VD = 15V SWITCHING TIMES, tc(on), tc(off), (µs)
VCC = 600V VD = 15V Tj = 25oC Tj = 125oC
101
Tj = 25oC Tj = 125oC trr
102
101
Irr
101 100
102
100 102
101
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL)
140 OVER CURRENT TRIP LEVEL % (NORMALIZED)
VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC
101
100
120 Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
10
20
101
120
100
80
60
0 0
15 13
COLLECTOR CURRENT, IC, (AMPERES)
101
102
VD = 17V
0 0
25
Tj = 25oC VCIN = 0V
1
2
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
3
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2.0
COLLECTOR CURRENT, IC, (AMPERES)
2.5
0
SWITCHING TIMES, ton, toff, (µs)
20
3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS (TYPICAL)
VD = 15V
110
100
90
80
0 0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-20
0
20
60
100
140
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE
Inverter Part CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL)
15
2.5
UVt UVr
14 2.0
UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH, tfo, (ms)
VD = 15V
1.5
1.0
13
12
11
0
0 -50
0
50
100
150
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
10-3 150
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL)
101
100
10-1
10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 1.5oC/W
10-3 10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi)
101
100
10-1
10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 4.5oC/W
10-3 10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120 FLAT-BASE TYPE INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
5
4
3
2 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC
0
4
3
2
1
Tj = 25oC VCIN = 0V IC = 10A
0 0
2
4
6
8
10
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
101
100 0
0.5
1.0
1.5
2.0
2.5
DIODE FORWARD VOLTAGE, VF, (VOLTS)
3.0
15 13
6
4
2
12
14
16
18
20
0
1
100
10-1
10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 3.0oC/W
10-2
10-1 TIME, (s)
100
3
4
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi)
101
10-3 10-3
2
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT)
DIODE FORWARD CHARACTERISTICS
VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC
VD = 17V
8
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
102
Tj = 25oC VCIN = 0V
0 0
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
1
10 COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS)
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
DIODE FORWARD CURRENT, IF, (AMPERES)
OUTPUT CHARACTERISTICS (TYPICAL)
101
101
100
10-1
10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 5.5oC/W
10-3 10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
