Pm30rsf060

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MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE A D X (15 TYP.) R 123 4 H R R N 5678 9 11 10 12 1. V UPC 2. U FO 3. U P 4. V UPI 5. V VPC 6. V FO 7. V P 8. V VPI 9. V WPC 10. WFO 11. WP 12. V WPI 13. V NC 13 15 17 19 14 16 18 T - DIA. (2 TYP.) G F J S 20 21 P 22 P M 23 P 24 25 P P E 14. V NI 15. B R 16. U N 17. V N 18. W N 19. F O 20. P 21. B 22. N 23. U 24. V 25. W Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. C B Y 2.0 X 0.5 MM PIN (6 TYP.) U 0.8 X 0.4 MM PIN (19 TYP.) V K K W W Features: u Complete Output Power Circuit V UPC UP U FO V UPI u Gate Drive Circuit OUT V CC IN FO SI GND GND OUT V CC FO IN V VPC VP V FO V VPI V SI GND GND OUT V CC FO V WPC WP WFO V WPI OUN IN UN S UN N TB GND SI VN VN OVN TC B L GND GND WN WN UN FO FO S VN V N1 V CC OWN VNC GND S WN FO IN OUT V CC SI GND GND BR Q U u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage P Outline Drawing and Circuit Diagram Dimensions Dimensions Inches Millimeters Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Inches Millimeters A 3.86±0.04 98.0±1.0 N 0.512 13.02 B 3.42±0.02 87.0±0.5 P 0.450±0.012 11.43±0.3 C 2.99 76.0 Q 0.31±0.02 8.0±0.5 D 2.400±0.03 60.96±0.8 R 0.300 E 2.250±0.03 57.15±0.8 S 0.24 Rad. Rad. 6.0 F 2.20±0.04 56.0±1.0 T 0.22 Dia. Dia. 5.5 G 1.77±0.03 45.0±0.8 U 0.16 4.0 Ordering Information: Example: Select the complete part number from the table below -i.e. PM30RSF060 is a 600V, 30 Ampere Intelligent Power Module. H 1.14 29.0 V 0.14 3.5 Type J 0.83 21.0 W 0.12±0.02 3.0±0.5 K 0.69 17.5 X 0.100±0.012 2.54±0.3 L 0.71±0.04 18.0±1.0 Y 0.04 1.0 M 0.588 14.925 7.62 PM Current Rating Amperes VCES Volts (x 10) 30 60 Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m Power Device Junction Temperature Module Weight (Typical) Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part, Tj = 125°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) 80 Grams VCC(prot.) — 400 Volts Viso 2500 Vrms Control Sector Supply Voltage (Applied between VUP1-VUPC , VVP1-VVPC, VWP1-VWPC, VN1-VNC) Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN-VNC) Fault Output Supply Voltage (Applied between U FO-VUPC, VFO-V VPC, WFO-VWPC , FO-V NC) Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) VD 20 Volts VCIN 20 Volts VFO 20 Volts I FO 20 mA VCES 600 Volts IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, ± Peak Collector Current, ± Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation IC 30 Amperes I CP 60 Amperes VCC 450 Volts VCC(surge) 500 Volts PC 83 Watts VCES 600 Volts Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25°C) Peak Collector Current, (TC = 25°C) Supply Voltage (Applied between P - N) IC 10 Amperes I CP 20 Amperes VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 39 Watts Diode Forward Current IF 10 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units 39 53 — Amperes 12 18 — Amperes — 80 — Amperes Control Sector Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V SC -20°C ≤ T ≤ 125°C, VD = 15V — 27 — Amperes toff(OC) VD = 15V — 10 — µs OT Trip Level 100 110 120 °C OTr Reset Level — 90 — °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level — 12.5 — Volts Applied between V UP1-VUPC, 13.5 15 16.5 Volts Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection Supply Voltage VD VVP1-VVPC, VWP1-VWPC, VN1-VNC Circuit Current ID VD = 15V, VCIN = 15V, VN1 -VNC — 25 30 mA VD = 15V, VCIN = 15V, VXP1 -VXPC — 7 10 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, W P-VWPC, 1.7 2.0 2.3 Volts 15 20 kHz UN · VN · WN · Br-V NC PWM Input Frequency fPWM 3-φ Sinusoidal — Fault Output Current I FO(H) VD = 15V, VFO = 15V — — 0.01 mA I FO(L) VD = 15V, VFO = 15V — 10 15 mA t FO VD = 15V 1.0 1.8 — ms Minimum Fault Output Pulse Width Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA VCE = VCES, Tj = 125°C — — 10 mA Diode Forward Voltage VEC -IC = 30A, VD = 15V, VCIN = 15V — 2.5 3.5 Volts IGBT Inverter Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 30A — 1.8 2.5 Volts VD = 15V, VCIN = 0V, IC = 30A, — 1.9 2.6 Volts 0.3 0.6 1.5 µs Tj = 125°C Inductive Load Switching Times t on t rr VD = 15V, VCIN = 0 ↔ 15V — 0.12 0.3 µs t C(on) VCC = 300V, IC = 30A — 0.3 1.0 µs t off Tj = 125°C — 2.0 2.8 µs — 0.6 1.5 µs — 2.6 3.5 Volts — 2.9 4.0 Volts IF = 10A — 1.5 2.5 Volts VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA t C(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, Tj = 25°C VD = 15V, VCIN = 0V, IC = 10A, Tj = 125°C Diode Forward Voltage VFM Collector Cutoff Current ICES Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Junction to Case Thermal Resistance R th(j-c)Q Each Inverter IGBT — Rth(j-c)F Each Inverter FWDi — Rth(j-c)Q Brake IGBT — Rth(j-c)F Brake FWDi — R th(c-f) Case to Fin Per Module, — Contact Thermal Resistance Condition Min. Typ. Max. Units — 1.5 °C/Watt — 3.0 °C/Watt — 3.2 °C/Watt — 4.5 °C/Watt — 0.067 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Supply Voltage VCC VD Condition Value Units Applied across P-N Terminals 0 ~ 400 Volts Applied between VUP1-VUPC , 15 ± 1.5 Volts VN1 -VNC, VVP1-VVPC, VWP1 -VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP-V UPC, V P-V VPC, WP-VWPC, 4.0 ~ VD Volts PWM Input Frequency fPWM UN · VN · W N · Br-V NC Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal ≥ 2.5 µs Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part 40 3.0 Tj = 25oC Tj = 125oC 4 3 2 1 0 IC = 30A VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR CURRENT, IC, (AMPERES) VD = 15V VCIN = 0V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) 2.0 1.0 10 20 30 40 0 12 14 16 18 20 10 0.5 0 20 1.5 1.0 2.0 2.5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 102 101 VCC = 300V VD = 15V SWITCHING TIMES, tc(on), tc(off), (µs) Inductive Load Tj = 25oC Tj = 125oC toff 100 ton Inductive Load Tj = 25oC Tj = 125oC 100 tc(off) tc(on) 10-1 100 101 10-1 100 102 101 VCC = 300V VC = 15V Inductive Load Tj = 25oC Tj = 125oC 101 100 100 102 101 102 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 110 110 OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 101 100 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 13 VD = 17V SUPPLY VOLTAGE, VD, (VOLTS) VCC = 300V VD = 15V 100 90 80 70 0 0 15 30 COLLECTOR CURRENT, IC, (AMPERES) 101 102 Tj = 25oC VCIN = 0V 0 0 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) SATURATION VOLTAGE VCE(sat), (VOLTS) 5 SWITCHING TIMES, ton, toff, (µs) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1.0 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 3.0 VD = 15V 100 90 80 70 60 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 2.5 15 14 2.0 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH, tFO (ms) VD = 15V 1.5 1.0 .5 UVt UVr 13 12 11 10 0 0 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) -50 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 0 50 100 JUNCTION TEMPERATURE, TC, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 1.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 3.0oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 4 MAX 4 TYP 3 2 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 1 0 20 MAX 3 TYP 2 VCIN = 0V IC = 10A Tj = 25oC Tj = 125oC 1 0 5 10 15 20 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC MAX 101 100 0 0.5 1.0 1.5 2.0 2.5 DIODE FORWARD VOLTAGE, VF, (VOLTS) 3.0 15 13 VD = 17V 15 MAX 10 5 12 14 16 18 20 0 1 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 3.2oC/W 10-2 10-1 TIME, (s) 100 3 5 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) DIODE FORWARD CHARACTERISTICS TYP 15 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V TYP MAX 0 0 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 DIODE FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 5 OUTPUT CHARACTERISTICS (TYPICAL) 101 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 4.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.2000