Transcript
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE
PM75CLB120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. • 3φ 75A, 1200V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 11kW/15kW class inverter application • UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm 120 106 ±0.25
7 19.75
66.5 17 16
3.25
16
16
15.25 16
2-φ5.5 3-2
6-2
MOUNTING HOLES
1
5
9
13
2-φ2.5
35
55
N
25.75
4 4
3
1.5 1
3-2
1.5
3-2
19
4 4
25
P
U
V
W
1
B
4 4
4 4
4-
φ2 .
9.5 5
19.5 23
23
Terminal code
98.25
19-■0.5
27.5
23
9.5
22 7.75
4 4
11.5
2.5
4 4
1. 2. 3. 4. 5. 6. 7. 8. 9. 10.
VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO
11. 12. 13. 14. 15. 16. 17. 18. 19.
WP VWP1 VNC VN1 NC UN VN WN Fo
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC Fo
VNC WN
VN1
WP VWP1 VWPC WFO
UN
VN
1.5k
VP VVPC
1.5k
Gnd In
Gnd
Fo Vcc
Si Out
OT
NC
Gnd In
Gnd
Fo Vcc
Si Out
OT
Gnd In
Gnd
Fo Vcc
Si Out
OT
N
Gnd In
Gnd
UP VUPC
VUP1 UFO
1.5k
Fo Vcc
Si Out
VVP1 VFO
OT
Gnd In
Gnd
W
V
1.5k
Fo Vcc
Si Out
Gnd In
OT
Gnd
Fo Vcc
Si Out
U
OT
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj
Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature
Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C
(Note-1)
Ratings 1200 75 150 595 –20 ~ +150
Unit V A A W °C
Ratings
Unit
20
V
20
V
20
V
20
mA
CONTROL PART Symbol
Parameter
VD
Supply Voltage
VCIN
Input Voltage
VFO
Fault Output Supply Voltage
IFO
Fault Output Current
Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso
Ratings
Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Unit
800
V
1000 –40 ~ +125 2500
V °C Vrms
THERMAL RESISTANCES Symbol
Condition
Parameter
Rth(j-c)Q Rth(j-c)F
Junction to case Thermal Resistances
Rth(c-f)
Contact Thermal Resistance
Inverter IGBT (per 1 element) Inverter FWDi (per 1 element) Case to fin, (per 1 module) Thermal grease applied
(Note-1) (Note-1) (Note-1)
Min. — —
Limits Typ. — —
Max. 0.21* 0.30*
—
—
0.038
Limits Typ. 1.8 1.9 2.5 1.0 0.5 0.4 2.0 0.7 — —
Max. 2.3 2.4 3.5 2.5 0.8 1.0 3.0 1.2 1 10
Unit
°C/W
* If you use this value, Rth(f-a) should be measured just under the chips. (Note-1) TC (under the chip) measurement point is below. arm axis X Y
UP IGBT FWDi 28.3 28.3 –8.2 2.0
VP IGBT FWDi 65.0 65.0 –8.2 2.0
WP IGBT FWDi 87.0 87.0 –8.2 2.0
(Unit : mm) UN IGBT FWDi 39.3 39.3 6.2 –4.0
VN IGBT FWDi 54.0 54.0 6.2 –4.0
WN IGBT FWDi 76.0 76.0 6.2 –4.0
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES
Parameter
Condition
Collector-Emitter Saturation Voltage FWDi Forward Voltage
VD = 15V, IC = 75A VCIN = 0V (Fig. 1) –IC = 75A, VD = 15V, VCIN = 15V
Switching Time
VD = 15V, VCIN = 0V↔15V VCC = 600V, IC = 75A Tj = 125°C Inductive Load
Collector-Emitter Cutoff Current
VCE = VCES, VCIN = 15V
Tj = 25°C Tj = 125°C (Fig. 2)
(Fig. 3,4) (Fig. 5)
Tj = 25°C Tj = 125°C
Min. — — — 0.5 — — — — — —
Unit V V
µs
mA
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART Symbol
Parameter
Condition VN1-VNC V*P1-V*PC
ID
Circuit Current
VD = 15V, VCIN = 15V
Vth(ON) Vth(OFF) SC
Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC (Fig. 3,6) –20 ≤ Tj ≤ 125°C, VD = 15V
toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO
VD = 15V
(Fig. 3,6)
Over Temperature Protection
VD = 15V Detect Tj of IGBT chip
Supply Circuit Under-Voltage Protection
–20 ≤ Tj ≤ 125°C
Fault Output Current
VD = 15V, VFO = 15V
(Note-2)
Minimum Fault Output Pulse Width
VD = 15V
(Note-2)
Trip level Reset level Trip level Reset level
Min. — — 1.2 1.7 150
Limits Typ. 15 5 1.5 2.0 —
Max. 25 10 1.8 2.3 —
Unit mA V A
—
0.2
—
µs
135 — 11.5 — — —
145 125 12.0 12.5 — 10
— — 12.5 — 0.01 15
°C
1.0
1.8
—
V mA ms
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS Symbol — —
Condition
Parameter Mounting torque Weight
Mounting part
screw : M5 —
Min. 2.5 —
Limits Typ. 3.0 340
Max. 3.5 —
Unit N•m g
RECOMMENDED CONDITIONS FOR USE Symbol VCC
Parameter Supply Voltage
VD
Control Supply Voltage
VCIN(ON) VCIN(OFF) fPWM
Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time
tdead
Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals
Recommended value ≤ 800
Unit V
15.0 ± 1.5
V
(Fig. 7)
≤ 0.8 ≥ 9.0 ≤ 20
kHz
≥ 2.5
µs
V
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) IN Fo
VCIN
P, (U,V,W)
Ic
V
IN Fo
VCIN
–Ic
V
(15V)
(0V)
U,V,W, (N)
VD (all)
U,V,W, (N)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching P
VCIN (15V)
Fo
Signal input (Upper Arm)
trr CS
Ic
Vcc
Fo
Signal input (Lower Arm)
VCIN
VCE
Irr
U,V,W
90%
90% N
VD (all)
b) Upper Arm Switching
Ic
10%
10%
10%
10%
P
tc (on)
Fo
Signal input (Upper Arm)
VCIN
VCIN
U,V,W
CS
VCIN (15V)
tc (off)
Vcc
td (on)
tr
tf
td (off)
Fo
Signal input (Lower Arm)
(ton= td (on) + tr)
(toff= td (off) + tf)
N
Ic
VD (all)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN Short Circuit Current
P, (U,V,W) A
VCIN (15V)
Constant Current
IN Fo
SC Pulse VCE
Ic
VD (all)
U,V,W, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM’ input signal VCIN (Upper Arm)
1.5V
0V IPM’ input signal VCIN (Lower Arm)
0V
2V
tdead
2V
1.5V
1.5V
tdead
2V
t
t
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE
P ≥10µ
20k
VUP1
→
VD
UFo
IF
1.5k
Vcc Fo
UP
OT OUT
VUPC
+ –
Si
In
U
GND GND
≥0.1µ
VVP1 VFo
VD
1.5k
Fo
VP
1.5k
Vcc Fo
WP
Vcc
≥10µ
Fo UN
OT OUT Si W OT OUT Si
In GND GND
≥0.1µ
N OT
20k
→
M
GND GND
20k
IF
V
In
VWPC
→
Si
GND GND
VWP1
VD
OT OUT
In
VVPC
WFo
Vcc
Vcc
≥10µ
IF
Fo
VN
OUT Si
In GND GND
≥0.1µ 20k
→
VD
VN1
Vcc
≥10µ
IF
Fo
WN
≥0.1µ
In
OT OUT Si
GND GND
VNC
NC
NC 5V
1k
Fo
1.5k
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
• • • • • • •
May 2005
MITSUBISHI
PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (INVERTER PART · TYPICAL)
OUTPUT CHARACTERISTICS (INVERTER PART · TYPICAL) COLLECTOR CURRENT IC (A)
Tj = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
80 VD = 17V
70
15V 13V
60 50 40 30 20 10 0
0.5
0
1
1.5
2
2
VD = 15V
1.5
1
0.5 Tj = 25°C Tj = 125°C 0
0
10
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (INVERTER PART · TYPICAL) 2.5
1.5
1
0.5
IC = 75A Tj = 25°C Tj = 125°C
0 12
13
14
15
16
17
50
60
70
80
101 VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load
7 5 4 3 2
tc(off)
tc(off)
100 7 5 4 tc(on) 3
tc(off)
2
10–1 0 10
18
2
3 4 5 7 101
2
3 4 5 7 102
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
SWITCHING TIME CHARACTERISTICS (TYPICAL)
SWITCHING LOSS CHARACTERISTICS (TYPICAL)
101 SWITCHING TIME ton, toff (µs)
40
SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME tc(on), tc(off) (µs)
2
30
COLLECTOR CURRENT IC (A)
7 5 4 3
toff
toff
2
100 7 5 4 3
ton VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load
2
10–1 0 10
2
3 4 5 7 101
2
3 4 5 7 102
COLLECTOR CURRENT IC (A)
SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
20
102 7 5 4 3 2
ESW(on)
101 7 5 4 3 2
ESW(off)
100 ESW(on) 7 ESW(off) 5 ESW(on) 4 3 ESW(off)
VCC = 600V VD = 15V Tj = 25°C Tj = 125°C Inductive load
2
10–1 0 10
2
3 4 5 7 101
2
3 4 5 7 102
COLLECTOR CURRENT IC (A)
May 2005
MITSUBISHI
PM75CLB120
102
VD = 15V
7 5 4 3 2
101 7 5 4 3 2
100
Tj = 25°C Tj = 125°C 0
0.5
1
1.5
2
2.5
7 5 4 3
trr trr Irr Irr
2
10–1
7 5 4 3 2
101
7 5 4 3
7 5 4 3
2
10–2 0 10
3
2
VCC = 600V VD = 15V Tj = 25°C Tj = 125°C 2 Inductive load 100 1 2 3 4 5 7 102 3 4 5 7 10
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT –IC (A)
ID VS. fc CHARACTERISTICS (TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART) 100
VD = 15V Tj = 25°C 40 N-side 30
20 P-side
10
0
0
5
10
15
fc (kHz)
20
25
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c)
50
ID (mA)
DIODE REVERSE RECOVERY CHARACTERISTICS (INVERTER PART · TYPICAL) 100 102
REVERSE RECOVERY CURRENT lrr (A)
DIODE FORWARD CHARACTERISTICS (INVERTER PART · TYPICAL)
REVERSE RECOVERY TIME trr (µs)
COLLECTOR RECOVERY CURRENT –IC (A)
FLAT-BASE TYPE INSULATED PACKAGE
7 5 3 2
10–1 7 5 3 2
10–2 Single Pulse 7 5 IGBT Part; Per unit base = Rth(j – c)Q = 0.21°C/ W 3 FWDi Part; 2 Per unit base = Rth(j – c)F = 0.30°C/ W 10–3 –5 10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 TIME (s)
May 2005
