Transcript
Power Module 1200V 75A IGBT Module MG1275W-XN2MM
RoHS
Features • High level of integration • IGBT CHIP(Trench+Field Stop technology) 3
• L ow saturation voltage and positive temperature coefficient • F ast switching and short tail current
• F ree wheeling diodes with fast and soft reverse recovery • S olderable pins for PCB mounting • T emperature sense included
Applications • AC motor control • Motion/servo control
• Inverter and power supplies
Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250 Recommended (M5)
Weight
2.5
5
N·m
300
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
105
A
TC=80°C
75
A
tp=1ms
150
A
368
W
IGBT VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG1275W-XN2MM
TJ=25°C
1200
V
TC=25°C
105
A
TC=80°C
75
A
tp=1ms
150
A
TJ =125°C, t=10ms, VR=0V
1150
A2s
226 1
©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=3.0mA
5.0
5.8
6.5
V
Collector - Emitter
IC=75A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=75A, VGE=15V, TJ=125°C
1.9
V
IGBT VGE(th) VCE(sat) IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=1200V, VGE=0V, TJ=25°C
1
mA
VCE=1200V, VGE=0V, TJ=125°C
10
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=75A , VGE=±15V VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
IC=75A
tf
Fall Time
VGE=±15V
VCC=600V RG =4.7Ω Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400 10
Ω
0.7
μC
5.3
nF
0.2
nF
TJ=25°C
260
ns
TJ=125°C
290
ns
TJ=25°C
30
ns
TJ=125°C
50
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
70
ns
TJ=125°C
90
ns
TJ=25°C
6.6
mJ
TJ=125°C
9.4
mJ
TJ=25°C
6.8
mJ
TJ=125°C
8.0
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
300
Junction-to-Case Thermal Resistance (Per IGBT)
A 0.34
K/W
Diode VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=75A, VGE=0V, TJ =25°C
1.65
V
IF=75A, VGE=0V, TJ =125°C
1.65
V
IF=75A, VR=600V diF/dt=2000A/µs TJ=125°C
300
ns
85
A
6.5
mJ
Junction-to-Case Thermal Resistance (Per Diode)
0.56
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG1275W-XN2MM
227 2
Min
Typ 5
KΩ
3375
K
©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter
Figure 2: Typical Output Characteristics for IGBT Inverter
150
150 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V
VGE =15V
120 Tj =25°C
90
IC (A)
IC (A)
120
60
90
TJ =125°C
60
Tj =125°C
30
30
0 0
0.5
1.0
1.5 2.0 VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T ypical Transfer Characteristics for IGBT Inverter
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter
150
25
VCE=600V IC=75A VGE=±15V Tj =125°C
VCE =20V
20
Tj =25°C
90 60
Eon Eoff (mJ)
IC (A)
120
Tj =125°C
0
5
6
7
9 8 VGE˄V˅
10
11
10
0
12
Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 30 25
Eoff
10
20 30 RG˄Ω˅
40
50
180
VCE=600V RG=4.7Ω VGE=±15V Tj =125°C
150 120
20 15
Eon
10
90 RG=4.7Ω VGE=±15V Tj =125°C
60
Eoff
30
5 0 0
0
Figure 6: R everse Biased Safe Operating Area for IGBT Inverter
IC (A)
Eon Eoff (mJ)
15
5
30
MG1275W-XN2MM
Eon
30
60 90 IC˄A˅
120
0
150
228 3
0
200
400
600 800 1000 1200 1400 VCE˄V˅ ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter
Figure 8: S witching Energy vs. Gate Resistort for Diode Inverter
150
10.0 8.0 Erec (mJ)
IF (A)
120
IF=75A VCE=600V Tj =125°C
90 60
6.0 4.0
Tj =125°C 30
2.0
Tj =25°C 0
0
0.5
1.0 1.5 V ˄V˅
2.0
0
2.5
0
10
Figure 9: Switching Energy vs. Forward Current for Diode Inverter
40
50
Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter
10.0
1
RG=4.7Ω VCE=600V Tj =125°C
Diode
ZthJC (K/W)
Erec (mJ)
30
RG˄Ω˅
F
8.0
20
6.0 4.0
IGBT 0.1
2.0 0 0
60
30
90
120
0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds)
150
IF (A)
Figure 11: NTC Characteristics
100000 IFGE =25=15V A V VCE=600V TVj =125°C
10000 R (¡)
TVj =25°C R TVj =125°C
1000
100 0
MG1275W-XN2MM
20
40 60 80 100 120 140 160 TC˄°C˅
229 4
©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module Circuit Diagram
Part Marking System
Part Numbering System
MG1275 W-XN2MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING
ASSEMBLY SITE WAFER TYPE
MG1275W-XN2MM
Lot#:xxxxxxxxx
Space reserved for QR code
CIRCUIT TYPE X: X PACKAGE TYPE
75: 75A
MG1275W-XN2MM
230 5
©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module
Packing Options Part Number
Marking
Weight
Packing Mode
M.O.Q
MG1275W-XBN2MM
MG1275W-XBN2MM
300g
Bulk Pack
20
Dimensions-Package W
Ø
Dimensions (mm)
MG1275W-XN2MM
231 6
©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14
