Transcript
Power Module 1700V 450A IGBT Module MG17450WB-BN4MM
RoHS
Features • IGBT3 CHIP(1700V Trench+Field Stop technology)
• D IODE CHIP(1700V EMCON 3 technology)
• L ow turn-off losses, short tail current
• F ree wheeling diodes with fast and soft reverse recovery
• V CE(sat) with positive temperature coefficient
Applications • AC motor control • Motion/servo control
• Inverter and power supplies
• Photovoltaic/Fuel cell
Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol
Parameters
TJ max
Max. Junction Temperature
Test Conditions
Min
Typ
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
AC, t=1min
3500
V
250
Torque
Module-to-Sink
Recommended (M5)
2.5
Torque
Module Electrodes
Recommended (M6)
3
Weight
5
N·m
5
N·m
350
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1700
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
600
A
TC=80°C
450
A
tp=1ms
900
A
2250
W
Diode VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG17450WB-BN4MM
TJ=25°C
1700
V
TC=25°C
450
A
TC=80°C
350
A
tp=1ms
900
A
TJ =125°C, t=10ms, VR=0V
20000
A 2s
1 319
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14
Power Module 1700V 450A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=18mA
5.0
Collector - Emitter
IC=450A, VGE=15V, TJ=25°C
5.8
6.4
V
2.0
2.45
Saturation Voltage
IC=450A, VGE=15V, TJ=125°C
2.4
IGBT VGE(th) VCE(sat) ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1700V, VGE=0V, TJ=25°C
3
mA
VCE=1700V, VGE=0V, TJ=125°C
20
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=25V, VGE=0V, f =1MHz
IC=450A RG =3.3Ω
Fall Time
Eon
Turn - on Energy
VGE=±15V Inductive Load
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
VCE=900V, IC=450A , VGE=±15V
VCC=900V
tf
V V
1.7
Ω
5.1
μC
40.5
nF
1.3
nF
TJ=25°C
280
ns
TJ=125°C
300
ns
TJ=25°C
80
ns
TJ=125°C
100
ns
TJ=25°C
810
ns
TJ=125°C
1000
ns
TJ=25°C
180
ns
TJ=125°C
300
ns
TJ=25°C
96.5
mJ
TJ=125°C
140
mJ
TJ=25°C
96
mJ
TJ=125°C
140
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=1000V
1800
Junction-to-Case Thermal Resistance (Per IGBT)
A 0.055
K/W
2.2
V
Diode VF
Forward Voltage
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
RthJCD
IF=450A, VGE=0V, TJ =25°C
1.8
IF=450A, VGE=0V, TJ =125°C
1.9
V
IF=450A, VR=900V diF/dt=-4500A/µs TJ=125°C
570
A
195
μC
110
mJ
Junction-to-Case Thermal Resistance (Per Diode)
0.10
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG17450WB-BN4MM
2 320
Min
Typ 5
KΩ
3375
K
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14
Power Module 1700V 450A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter
Figure 2: Typical Output Characteristics for IGBT Inverter
900
900 VGE =15V
750
750 600
Tj =25°C IC (A)
IC (A)
600 450 300
300
Tj =125°C
150
150
0 0
1.0
2.0 VCE˄V˅
0
4.0
3.0
Figure 3: T ypical Transfer Characteristics for IGBT Inverter
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter
900
800
VCE=900V IC=450A VGE=±15V Tj =125°C
VCE =20V
750
600
Eon
Eon Eoff (mJ)
Tj =25°C
600 IC (A)
Tj =125°C
450
450
400
Tj =125°C
300
200
150 0
Eoff
5
6
7
8
9 10 VGE˄V˅
11
12
0
13
Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 450 400
0
5
10
20 15 RG˄Ω˅
25
30
Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 1050
VCE=900V RG=3.3Ω VGE=±15V Tj =125°C
900 750
Eoff
Eon Eoff (mJ)
300
200
IC (A)
600 Eon
450 RG=3.3Ω VGE=±15V Tj =125°C
300
100
150 0 0
MG17450WB-BN4MM
150
300
600 450 IC˄A˅
750
0
900
3
321
0
200
600 1000 VCE˄V˅
1400
1800
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14
Power Module 1700V 450A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter
Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter
900
130
100
Erec (mJ)
600 IF (A)
450 Tj =125°C
300 150 0
0
40
Tj =25°C 0.5
1.0
2.0 1.5 VF˄V˅
2.5
20
3.0
0
5
10
15 20 RG˄Ω˅
25
30
Figure 10: NTC Characteristics
1
0.1
80 60
Figure 9: Transient Thermal Impedance of Diode and IGBT Inverter
ZthJC (K/W)
IF=450A VCE=900V Tj =125°C
120
750
100000
Diode
10000 R
IGBT 0.01
1000
0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds)
100 0
20
40
80 100 120 140 160 60 TC˄°C˅
Circuit Diagram
MG17450WB-BN4MM
4 322
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14
Power Module 1700V 450A IGBT Module
Dimensions-Package WB
The foot pins are in gold / nickel coating
Packing Options Part Number
Marking
Weight
Packing Mode
M.O.Q
MG17450WB-BN4MM
MG17450WB-BN4MM
350g
Bulk Pack
20
Part Marking System
Part Numbering System
MG17450 WB - B N4 MM PRODUCT TYPE M: Power Module
MG17450WB-BN4MM
ASSEMBLY SITE WAFER TYPE
MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V
CIRCUIT TYPE
CURRENT RATING
PACKAGE TYPE
LOT NUMBER
Space reserved for QR code
450: 450A
MG17450WB-BN4MM
5 323
©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14
