Transcript
Preliminary Information
AMMP-5040 20-45GHz Amplifier Data Sheet 1
2
3
8
Features • Frequency range: 20– 45 GHz • High gain: 22 dB • Gain flatness: ±1.5 dB • Return loss: Input: 17 dB, Output: 11 dB • Output power: P-1dB = 21 dBm at 38 GHz P-3dB = 22.5 dBm at 38 GHz • Applications Broadband gain block Broadband driver amplifier Point-to-point radio LMDS EW Instrumentation Frequency Multiplier (X2 and X3)
4
7
6
5
PACKAGE BASE GND
Pin 1 2 3 4 5 6 7 8
Function Vd RF Out Vg2 Vg1 RF In
Description The AMMP-5040 is a high gain broadband amplifier designed for both military applications and commercial communication systems. This four-stage amplifier has input and output matching Circuit for use in 50 ohm environments. It is fabricated using PHEMT integrated circuit structures that provide exceptional broadband performance. The backside of this chip is both RF and DC ground. This simplifies the assembly process and reduces assembly related performance variations and costs. This MMIC is a cost effective alternative to hybrid (discrete-FET) amplifiers that require complex tuning and assembly process. Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. VD Drain Voltage V 5 VG1,2 Gate Voltage V -3.0 0.5 Total Drain Current mA 550 IDD Input Power dBm 21 Pin CW Tch Operating Channel Temperature °C +160 Tb Operating Backside Temperature °C -55 +75 Tstg Storage Temperature °C -65 +165 Tmax Maximum Assembly Temp (60 sec max) °C +300 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this d i This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities, functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 September 2005 Revision Number: 1.0
AMMP-5040 DC Specifications/Physical Properties[1] Symbol VD1,2 Id1 ID2
Parameters and Test Conditions Drain Supply Operating Voltage First Stage Drain Supply Current Vdd=4.5 V, Vg1=-0.5 V Total Drain Supply
Units V mA
Min. 2
Typ. 4.5 50
mA
250 -0.45 -1.5 160
Max. 5
(Vdd=4.5 V, Vgg=-0.5 V) VG1,2 Vp
Gate Supply Operating Voltages (Idd=300mA) Pinch-off Voltage (Vdd = 4.5 V, Idd < 10 mA
V V
θ jc
Thermal Resistance (Backside Temp is 25°C)
°C/W
Note 1. Measured in wafer from with Tchuck = 25°C. (Except θ ch−bs .)
AMMP-5040 RF Specifications Top= 25°C, Vdd=4.5 V, Idd(Q)=300 mA, Zo=50Ω Symbol
Parameters and Test Conditions
BW
Operating Bandwidth Small-signal Gain
S 21
2
∆ S 21
2
RLin RLout
P−1 dB
Psat TOI S12 Note 1. 2.
Small-signal Gain Flatness Minimum input return loss Minimum output return loss Output Power at 1dB Gain Compression Saturated Output Power @f=10GHz IP3 (Output) ∆f=2 MHz, Pin=-8dBm Isolation
Units GHz dB
Broadband Specifications Min. Typ. 21 20 25
dB
Narrow Band Performance Max. 40 26
Typical 21-24 27-29 25.5 25
37-40 22.4
40-45 21.3
±1.5
±0.2
±0.4
±0.2
±1.2
dB
15
17
17
18
21
17
dB
8
14
10
14
13
13
dBm
19.5
21
23
20
22.5
21
20
dBm
21
22
24
21.6
23.5
22.5
21.5
dBm
27.5
28
30
30
27
dB
55
55
55
55
55
Small/Large -signal data measured in wafer from Tchuck = 25°C. RF data is collected at 6 frequency points (21, 24, 27, 29, 37 and 40 GHz)
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities, functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 September 2005 Revision Number: 1.0
AMMP-5040 Typical Performances (TA = 25°C,Zin = Zout = 50 Ω, Vd=5V, Vg=-1.4V)
35
26
30
22
25 Gain [dB]
Gain [dB]
30
18 14
15
3.0V 3.5V 4.0V 4.5V 5.0V
10 5
10 20
25
30 35 40 Frequency [GHz]
0
45
20
0
Gain [dB]
S11[dB] S22[dB]
-5 -10 -15 -20 25
30 35 40 Frequency [GHz]
45
20
25
30 35 40 Frequency [GHz]
Vd=3.5V Vd=4.0V Vd=4.5V Vd=5.0V
Fig.6. AMMP-5040 Gain as a function of Drain Voltage Vs. Frequency with Id=350mA 0 Input Return Loss [dB]
Gain [dB]
150mA 200mA 250mA 300mA 350mA 400mA
45
10 15 20 25 30 35 40 45 50 Frequency (GHz)
Fig.2. AMMP-5040 Typical Return Loss (Input and Output)
35 30 25 20 15 10 5 0
30 35 40 Frequency [GHz]
30 25 20 15 10 5 0
-25 20
25
Fig.4. AMMP-5040 Gain as a function of Drain Voltage Vs. Frequency with id=300mA
Fig.1 AMMP-5040 Typical Gain (VD=4.5V, Id=300mA)
Return Loss [dB]
20
-5
Vd=3.5V Vd=4.0V Vd=4.5V Vd=5.0V
-10 -15 -20 -25 -30 10
15
20
25 30 35 40 Frequency (GHz)
45
50
Fig.7. AMMP-5040 I/P Return Loss as a function of
45 Drain Voltage Vs. Frequency with Id=350mA
Fig.3. AMMP-5040 Gain as a function of Drain Current Vs. Frequency with Vd=4.5V This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities, functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 September 2005 Revision Number: 1.0
25 Vd=3.5V Vd=4.0V Vd=4.5V Vd=5.0V
-5
P1dB [dBm]
Output Return Loss [dB]
0
-10 -15
15
20
25 30 35 40 Frequency (GHz)
45
100mA 200mA 300mA 350mA
10
20
50
25
30
35
40
45
Frequency [GHz]
Fig.11. AMMP-5040 Typical Output Power (P-1) as a function of drain current @ Vd=4.5V
Fig.8. AMMP-5040 O/P Return Loss as a function of Drain Voltage vs. Frequency @ Id=350mA
15 13 NF [dB]
26 P1dB & P3dB [dBm]
15
5
-20 10
24 22 20 18
11 9 7
P1dB P3dB
5
16
20 20
25
30
35
40
Frequency [GHz]
IP3 [dBm]
25 23 21 19
Vd=5.0V Vd=4.5V Vd=4.0V Vd=3.5V
17
25
30 35 Frequency [GHz]
40
40 35 30 25 20 15 10 5 0 20
15 20
25 30 35 Frequency [GHz]
Fig.12. AMMP-5040 Typical Noise Figure @Vd=4.5V, Id=300mA
Fig.9. AMMP-5040 Typical Output Power (P-1 and P3) @Vd=4.5V, Id=300mA
P1dB [dBm]
20
40
45
25 30 35 Frequency [GHz]
40
Fig.13. AMMP-5040 Typical TOI @Vd=4.5V, Id=300mA
Fig.10. AMMP-5040 Typical Output Power (P-1) as a function of drain voltage @ Id=300mA This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities, functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 September 2005 Revision Number: 1.0
AMMP-5040 Applications The AMMP-5040 broadband amplifier is designed for both military (35 GHz) applications and wireless communication systems for point-to-point Radio, LMDS and other wireless applications. It is also suitable for frequency multiplier (X2, X3 & X4) due to excellent below band input return loss and high gain.
Contact your local Agilent sales representative for additional information concerning multiplier performance and operating conditions. Assembly Techniques Note 1: These MMIC have no ESD protection and are thus sensitive (do not exceed a 30V model), care should be taken when handing these devices.
Biasing and operation The recommended DC bias condition is Vd=4.5V supply and gate (Vg) connected to an adjustable negative voltage supply. The gate voltage is adjusted for a total drain supply current of typically 300 mA. Figure 2-13 can be used to help estimate the minimum drain voltage and current necessary for a given RF gain and output power. The RF input has matching circuitry that creates a 50-ohm DC and RF path to ground. A DC blocking capacitor should be used in the RF input transmission line. Any DC voltage applied to the RF input must be maintained below 1V. The RF output is AC coupled. No ground wires are needed since ground connection is made with plated through-holes to the backside of the device. The AMMP-5040 can also be used as frequency multiplier i.e. as a frequency doubler, tripler or quadrupler of the input frequency. Many bias schemes may be used to generate and amplify desired harmonics within the device. The information given here is intended to be used by the customer as a starting point for such application. Optimum conversion efficiency is obtained with approximately 3-8 dBm input drive level for frequency doubler and 14-16 dBm drive level for frequency Tripler. As a doubler the device can multiply an input signal in the 1023 GHz frequency range up to 20-46 GHz with conversion gain for output frequency up to 46 GHz. Similarly, 5-10 GHz signals can be quadrupled to 20-40 GHz with some conversion loss. Frequency doubling or quadrupling is accomplished by operating the first stage at pinch-off (Vg1=Vp≅ -1.1 volts). Stages 2, 3 and 4 are biased for normal amplification. The assembly diagram shown in Figure 15 can be used. To operate the device as frequency Tripler the Vd1 drain voltage can be reduced to 1.1-1.2 volts, Vd2,3& 4 should be 3.5-4.5V and gate voltage can be set at about –0.6 volts or adjusted to minimize second harmonics if needed. A simple bonding diagram for operation as a tripler is shown in Figure 15b. Better performance can be obtained by separately biasing Vd1 & Vd2,3,4 and similarly Vg1 & Vg2,3,4.
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities, functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 September 2005 Revision Number: 1.0
