Transcript
PS103-63 InGaP HBT Gain Block Features
Functional Diagram
Applications
5 - 3000MHz
Broadband Gain Block
21.0 dB Gain at 0.9GHz
Mobile Infrastructure
+8.5 dBm P1dB
Cellular, PCS, GSM, GPRS,
+21.0 dBm Output IP3
WCDMA, WiBro, WiMAX
Single Voltage Supply
W-LAN / DMB / ISM
Lead-free / Green / RoHScompliant SOT-363 Package
1
3 6 4
* Marking : 13C
CATV / DBS RFID / Fixed Wireless
Function
Pin No.
RF IN
3
RF OUT / Bias
6
Ground
1,2,4,5
Description The PS103-63 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The amplifier features high linear performance, wideband operation, and high reliability. The PS103-63 operates from a single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation. The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surfacemountable plastic SOT-363 packages.
Specifications Symbol
S21
S11
Parameters
Gain
Input Return Loss
S22
Output Return Loss
P1dB
Output Power @1dB compression
OIP3
Output Third Order intercept
Units
Freq.
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
22.6 21.0 18.6 17.6
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
-14 -12 -13 -15
dB
75 MHz 900 MHz 1900 MHz 2300 MHz
-13 -13 -12 -11
dBm
75 MHz 900 MHz 1900 MHz 2300 MHz
9.3 8.5 8.5 8.4
dBm
75 MHz 900 MHz 1900 MHz 2300 MHz
22.3 21.2 21.2 20.5
75 MHz 900 MHz 1900 MHz 2300 MHz
2.1 2.1 2.2 2.2
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
Rth
Thermal Resistance
°C/W
Min.
Typ.
Max.
3.35/21
Test Conditions : T=25°C, Supply Voltage=+4.5V, Rbias=52ohm, 50ohm System, OIP3 measured with two tones at an output power of -5dBm/tone separated by 1MHz.
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Page 1 of 4
June 2007
PS103-63 InGaP HBT Gain Block Typical RF Performance for 900MHz Tuned Application Circuit Supply Bias Voltage = 4.5V, R(bias)= 52 ohm, Current= 21mA
Frequency
MHz
500
900
1500
1900
2300
3000
S21
dB
22.1
21.2
19.7
18.8
17.9
15.7
S11
dB
-14
-12
-12
-13
-16
-14
S22
dB
-13
-13
-13
-13
-12
-11
P1dB
dBm
8.8
8.5
8.5
8.5
8.4
6.2
OIP3
dBm
21.3
21.3
21.1
21.3
20.6
19.1
Noise Figure
dB
2.2
2.1
2.2
2.2
2.2
2.3
Gain vs. Frequency
27 24
-5
-5
-10
-10
S22(dB)
18
-15
15 +25 C o -40 C o +85 C
12 9 0.5
1.0
1.5
2.0
2.5
o
+25 C o -40 C o +85 C
-20 -25 0.5
3.0
1.0
Output IP3 vs. Frequency
1.5
2.0
2.5
18 15
2.0
2.5
4
8
3
6 4 2 0.5
3.0
1.0
1.5
2.0
2.5
1 o
+25 C 0 0.0
3.0
0.5
1.0
20 15 10 5
Gain Output Power -10
-5
0
1.5
2.0
2.5
3.0
Frequency(GHz)
25 Output Power(dBm)/Gain(dB)
Output Power(dBm)/Gain(dB)
3.0
Output Power/Gain vs. Input Power @1.9GHz
Output Power/Gain vs. Input Power @0.9GHz
-15
2.5
2
Frequency(GHz)
25
-20
2.0
o
+25 C o -40 C o +85 C
Frequency(GHz)
0 -25
1.5
NF vs. Frequency
5
10
o
+25 C o -40 C o +85 C 1.5
1.0
Frequency(GHz)
NF(dB)
P1dB(dBm)
21
1.0
-25 0.5
3.0
P1dB vs. Frequency
12
24
12 0.5
+25 C o -40 C o +85 C
-20
Frequency(GHz)
Frequency(GHz)
27
-15
o
o
OIP3(dBm)
Output Return Loss
0
21 S11(dB)
Gain(dB)
Input Return Loss
0
20 15 10 5 0 -25
5
Input Power(dBm)
Gain Output Power -20
-15
-10
-5
0
5
Input Power(dBm)
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June 2007
PS103-63 InGaP HBT Gain Block Recommended Bias Values
900MHz Tuned Application Circuit Supply Voltage
Supply Voltage
R bias Value
Size
4.5 V
52.0 Ω
0805
5V
76.0 Ω
1210
6V
123.0 Ω
1210
7V
171.0 Ω
2010
8V
218.0 Ω
2010
10 V
313.0 Ω
2010
12 V
408.0 Ω
2512
R Bias 1uF
56pF 100nH RF IN
RF OUT
56pF
56pF
Typical RF Performance for 50 -500MHz Tuned Application Circuit Supply Bias Voltage = 4.5V, R(bias)= 52ohm, Current= 21mA
Frequency
MHz
75
125
300
500
S21 : Gain
dB
22.6
22.6
22.4
22.0
S11 : Input Return Loss
dB
-14
-14
-13
-13
S22 : Output Return Loss
dB
-13
-13
-13
-12
Output P1dB
dBm
9.3
9.5
9.3
8.7
Output IP3 @-5dBm
dBm
22.4
23.3
23.3
22.1
Noise Figure
dB
2.1
2.1
2.1
2.1
Supply Voltage
Gain vs. Frequency
27
1uF
R Bias
S21(dB)
24
820nH
RF IN
10nF
21
RF OUT 18 o
+25 C
10nF
15
10nF
0
100
200
300
400
500
600
Frequency(MHz)
Input Retrun Loss
0
-5 S22(dB)
-5 S11(dB)
Output Retrun Loss
0
-10
-15
-10
-15 o
o
+25 C
+25 C -20
-20 0
100
200
300
400
500
600
Frequency(MHz)
0
100
200
300
400
500
600
Frequency(MHz)
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June 2007
PS103-63 InGaP HBT Gain Block Absolute Maximum Ratings Parameter
Rating
Unit
Device Voltage
+3.7
V
Device Current
130
mA
RF Power Input
0
dBm
Storage Temperature
-55 to +125
°C
Ambient Operating Temperature
-40 to +85
°C
Junction Temperature
155
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-363 Package Outline
ESD / MSL Ratings
Land Pattern 0.8 (0.032) Plated Thru Ground Vias 0.8 (0.032)
2.08 (0.0832)
Package Outline 0.94 (0.0376) 1.3 (0.052)
1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101
0.38 (0.0152)
3.38 (0.1352)
4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020
2.68 (0.1072)
Evaluation Board Layout (4x4)
Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink.
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June 2007
