Transcript
PD-96991B
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
2N7586T1 IRHMS67264 250V, N-CHANNEL TECHNOLOGY
Product Summary Part Number Radiation Level IRHMS67264 100K Rads (Si)
RDS(on) 0.041Ω
ID 45A*
IRHMS63264
0.041Ω
45A*
300K Rads (Si)
Low-Ohmic TO-254AA International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight ESD Class: 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight
Units 45 28.5 180 208 1.67 ±20 251 45 20.8 4.4 -55 to 150
A W W/°C V mJ A mJ V/ns °C
300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical)
g
For footnotes refer to the last page
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1 03/26/14
IRHMS67264, 2N7586T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.31
—
V/°C
—
—
0.041
Ω
VGS = 12V, ID = 28.5A Ã
V mV/°C S
VDS = VGS, ID = 1.0mA
∆BVDSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
2.0 — 37 — —
Typ Max Units
— 4.0 -10.89 — — — — 10 — 25
nC
VDS = 15V, IDS = 28.5A Ã VDS= 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 45A VDS = 125V
ns
VDD = 125V, ID = 45A, V GS = 12V, RG = 2.35Ω
µA
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
— — — — — — — — — 6.8
100 -100 220 50 70 40 125 85 30 —
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
6847 933 12
— — —
Rg
Gate Resistance
0.48
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
nA
pF
Measured from Drain lead ( 6mm / 0.025 in from package ) to Source lead ( 6mm/ 0.025 in from package ) VGS = 0V, VDS = 25V f = 1.0MHz
Ω
f = 1.0MHz, open drain
nH
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD trr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
45 180 1.2 700 14.3
Test Conditions
A V ns µC
Tj = 25°C, IS = 45A, VGS = 0V Ã Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units — — —
— 0.60 0.21 — — 48
Test Conditions
°C/W Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS67264, 2N7586T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD
Up to 300K Rads (Si)
1
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Sourcee On-State Resistance (Low Ohmic TO-254AA) Diode Forward Voltage
Units
Test Conditions
Min
Max
250 2.0 — — —
— 4.0 100 -100 10
µA
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS= 0V
—
0.041
Ω
VGS = 12V, ID = 28.5A
—
0.041
Ω
VGS = 12V, ID = 28.5A
—
1.2
V
VGS = 0V, ID = 45A
V nA
1. Part numbers IRHMS67264 and IRHMS63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
VDS (V) @VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
-20V
1350 ± 5%
125 ± 10%
250
250
250
250
40
61 ± 5%
825 ± 5%
66 ± 7.5%
250
250
250
50
-
90 ± 5%
1470 ± 5%
80 ± 5%
75
75
-
-
-
Bias VDS (V)
44 ± 5%
300 250 200 150 100 50 0
LET=44 ± 5% LET=61 ± 5% LET=90 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHMS67264, 2N7586T1
ID, Drain-to-Source Current (A)
TOP
100 BOTTOM
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
10
60µs PULSE WIDTH Tj = 25°C
ID, Drain-to-Source Current (A)
1000
Pre-Irradiation
1
100
5.0V
60µs PULSE WIDTH Tj = 150°C 10
0.1
1
10
100
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
3.0
T J = 150°C 100 T J = 25°C
VDS = 50V 15 WIDTH 60µs PULSE
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID = 45A 2.5
2.0
1.5
1.0
0.5
VGS = 12V 0.0
5
5.5
6
6.5
7
7.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
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IRHMS67264, 2N7586T1
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance (m Ω)
Pre-Irradiation
ID = 45A
T J = 150°C
T J = 25°C
4
8
12
16
120 100 T J = 150°C
80 60 40
T J = 25°C 20 VGS = 12V 0 0
20
20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 6. Typical On-Resistance Vs Drain Current
330 320
5.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
310 300 290 280 270 260 250
4.5 4.0 3.5 3.0 2.5 2.0 1.5
ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA
1.0
240 -60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs Temperature
5
IRHMS67264, 2N7586T1
14000
20
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
10000 8000
Ciss
6000
Coss
4000
Crss
2000 0
16
12
8
4 FOR TEST CIRCUIT SEE FIGURE 17 0
1
10
100
0
50
VDS, Drain-to-Source Voltage (V)
100
150
200
250
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
1000
50
40
100
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
VDS = 200V VDS = 125V VDS = 50V
ID = 45A VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
Pre-Irradiation
T J = 150°C T J = 25°C
10
1
30
20
10 VGS = 0V 0.1
0 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode Forward Voltage
6
1.6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHMS67264, 2N7586T1
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100µs
10
1ms 1
0.1
Tc = 25°C Tj = 150°C Single Pulse
10ms DC
EAS , Single Pulse Avalanche Energy (mJ)
500
1000
ID 20.1A 28.5A 45A
TOP 400
BOTTOM 300
200
100
0
1
10
100
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
PDM
0.01
t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHMS67264, 2N7586T1
Pre-Irradiation V(BR)DSS tp
15V
DRIVER
L
VDS
D.U.T.
RG
+ - VDD
IAS
VGS 20V
A
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
12V
50KΩ .2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+ V - DS
VGS 3mA
IG
Charge Fig 17a. Basic Gate Charge Waveform VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS 90%
VGS D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10% VGS td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHMS67264, 2N7586T1
Footnotes: Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L = 0.25 mH Peak IL = 45A, VGS = 12V Â ISD ≤ 45A, di/dt ≤ 1470A/µs, VDD ≤ 250V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —Low-Ohmic TO-254AA 0.12 [.005]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
6.60 [.260] 6.32 [.249]
A
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665] 1
C
2
2X
B
3
14.48 [.570] 12.95 [.510]
3X
3.81 [.150]
13.84 [.545] 13.59 [.535]
1.27 [.050] 1.02 [.040]
0.84 [.033] MAX.
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150] B A
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2014
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