Transcript
PD-94713D
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733
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TECHNOLOGY
Product Summary Part Number Radiation Level IRHMS597064 100K Rads (Si)
RDS(on) 0.018Ω
ID QPL Part Number -45A* JANSR2N7524T1
IRHMS593064
0.018Ω
-45A*
300K Rads (Si)
JANSF2N7524T1
Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Units -45* -45* -180 208 1.67 ±20 890 -45 20.8 -3.8 -55 to 150
A W W/°C V mJ A mJ V/ns o
300 (0.063 in./1.6 mm from case for 10s) 9.3 (Typical)
C g
* Current is limited by package For footnotes refer to the last page
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1 10/26/15
IRHMS597064, JANSR2N7524T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter
Min
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Typ Max Units
Test Conditions
-60
—
—
V
—
-0.064
—
V/°C
—
—
0.018
Ω
VGS = -12V, ID = -45A
-2.0 39 — —
— — — —
-4.0 — -10 -25
V S
— — — — — — — — — —
— — — — — — — — — 6.8
-100 100 160 60 65 35 150 100 35 —
nC
VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -45A VDS = -48V ,VGS = 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS = -12V, ID = -45A VDS = -30V
ns
VDD = -30V, ID = -45A VGS = -12V, RG = 2.35Ω
µA
nA
VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA
nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
— — — —
8040 2780 310 2.2
— — — —
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Ω
f = 0.75MHz, open drain
Source-Drain Diode Ratings and Characteristics Parameter
Min Typ Max Units
IS ISM VSD t rr Q RR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ton
Forward Turn-On Time
— — — — —
— — — — —
-45* -180 -5.0 110 460
Test Conditions
A V ns nC
Tj = 25°C, IS = -45A, VGS = 0V Tj = 25°C, IF = -45A, di/dt ≤ -100A/µs VDD ≤ -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance Parameter R thJC RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units — — —
— 0.60 0.21 — — 48
Test Conditions
°C/W Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS597064, JANSR2N7524T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100K Rads (Si)1 Min Max
Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low-Ohmic TO-254) Diode Forward Voltage
300KRads (Si)2 Units Min Max
Test Conditions
-60 -2.0 — — — —
— -4.0 -100 100 -10 0.017
-60 -2.0 — — — —
— -5.0 -100 100 -10 0.017
µA Ω
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS = -48V, VGS = 0V VGS = -12V, ID = -45A
—
0.018
—
0.018
Ω
VGS = -12V, ID = -45A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -45A
V nA
1. Part number: IRHMS597064, JANSR2N7524T1 2. Part number: IRHMS593064, JANSF2N7524T1
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area Ion
VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36.8 - 60 - 60 - 60 - 60 - 60 32.7 - 60 - 60 - 60 - 45 - 25 28.5 - 60 - 60 - 60 — —
Energy (MeV) 285 345 357
VDS
Br I Au
LET (MeV/(mg/cm2)) 37.3 59.9 82.3
-70 -60 -50 -40 -30 -20 -10 0
Br I Au
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page
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IRHMS597064, JANSR2N7524T1
1000 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
100
100
-5.0V
10
60µs PULSE WIDTH Tj = 25°C 0.1
10
60µs PULSE WIDTH Tj = 150°C
1
10
0.1
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
T J = 25°C T J = 150°C
VDS = -25V 15 WIDTH 60µs PULSE 10 5
5.5
6
6.5
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current ( Α)
-5.0V
1
1
7
-V GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-I D, Drain-to-Source Current (A)
1000
-I D, Drain-to-Source Current (A)
Pre-Irradiation
ID = -45A
1.5
1.0
0.5
0.0 -60 -40 -20
VGS = -12V 0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
C, Capacitance (pF)
10000
Ciss
8000
6000
Coss
4000
2000
20
-VGS , Gate-to-Source Voltage (V)
12000
IRHMS597064, JANSR2N7524T1
ID = -45A
VDS =-48V VDS =-30V VDS =-12V
16
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss 0
1
10
0
100
0
50
-VDS , Drain-to-Source Voltage (V)
150
200
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current ( Α)
100
QG , Total Gate Charge (nC)
T J = 150°C
100
T J = 25°C 10
1
OPERATION IN THIS AREA LIMITED BY RDS(on)
100 100µs
1ms
10
VGS = 0V 1
0.1 0.0
1.0
2.0
3.0
4.0
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
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5.0
10ms
Tc = 25°C Tj = 150°C Single Pulse 1
DC
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRHMS597064, JANSR2N7524T1
Pre-Irradiation
100
VGS
80
-ID , Drain Current (A)
RD
V DS
LIMITED BY PACKAGE
D.U.T.
RG
+
60
V DD
VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit 20
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C) 90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms 1
Thermal Response ( Z thJC )
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01
0.01
P DM t1
SINGLE PULSE ( THERMAL RESPONSE )
t2
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHMS597064, JANSR2N7524T1
L
2000
-
D.U.T
RG
VGS -20V
+
IAS
tp
VVDD DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
VDS
TOP
1600
BOTTOM
ID -20A -28.5A -45A
1200
800
400
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V 12V
.2µF .3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRHMS597064, JANSR2N7524T1
Pre-Irradiation
Footnotes: Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD ≤ -30V, starting TJ = 25°C, L = 0.88mH Peak IL = -45A, VGS = -12V ISD ≤ -45A, di/dt ≤ -417A/µs, VDD ≤ -60V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —Low-Ohmic TO-254AA 0.12 [.005]
13.84 [.545] 13.59 [.535]
3.78 [.149] 3.53 [.139]
6.60 [.260] 6.32 [.249]
A
20.32 [.800] 20.07 [.790]
17.40 [.685] 16.89 [.665] 1
C
2
2X
B
3
14.48 [.570] 12.95 [.510]
3X
3.81 [.150]
13.84 [.545] 13.59 [.535]
1.27 [.050] 1.02 [.040]
0.84 [.033] MAX.
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150] B A
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2015
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